• Smart Structures and Systems
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• v.21 no.3
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• pp.287-303
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• 2018

Applications of energy harvesting from mechanical vibrations is becoming popular but the full potential of such applications is yet to be explored. This paper addresses this issue by considering an application of energy harvesting for the dual objective of serving as an indicator of structural health monitoring (SHM) and extent of control. Variation of harvested energy from an undamaged baseline is employed for this purpose and the concept is illustrated by implementing it for active vibrations of a pipe structure. Theoretical and experimental analyses are carried out to determine the energy harvesting potential from undamaged and damaged conditions. The use of energy harvesting as indicator for control is subsequently investigated, considering the effect of the introduction of a tuned mass damper (TMD). It is found that energy harvesting can be used for the detection and monitoring of the location and magnitude of damage occurring within a pipe structure. Additionally, the harvested energy acts as an indicator of the extent of reduction of vibration of pipes when a TMD is attached. This paper extends the range of applications of energy harvesting devices for the monitoring of built infrastructure and illustrates the vast potential of energy harvesters as smart sensors.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.11
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• pp.2697-2702
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• 2015

In the existing studies providing a method which do exercise according to music speed, the method was used which a user changes playing musics. However, if the method which a user changes directly playing musics is used, flow of exercise can be discontinued during searching musics when anyone want to play a fast music. In this paper, we designed the module which measures the number of steps from a user of wearable smart shoes based on the Arduino, and implemented the module so that the number of steps can be measured correctly by sending data to smart phone based on Android. And it is possible to measure moving distance and pace speed by utilizing a GPS in order to get the more accurate momentum. Also, we can measure more accurate calorie consumption than existing products by measuring the mean value of the calorie consumption for moving distance and the calorie consumption for the number of steps, give motivation of exercise by applying an algorithm of changing music genre according to pace speed, and increase the exercise effect at the same time.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• Nano
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• v.13 no.11
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• pp.1850131.1-1850131.19
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• 2018

In this paper, an electrochemical sensor for epinephrine (EP), a neurotransmitter was developed by anchoring molecularly imprinted polymeric matrix (MIP) on the surface of gold-coated quartz crystal electrode of electrochemical quartz crystal microbalance (EQCM) using starch nanoparticles (Starch NP) - reduced graphene oxide (RGO) nanocomposite as polymeric format for the first time. Use of EP in therapeutic treatment requires proper dose and route of administration. Proper follow-up of neurological disorders and timely diagnosis of them has been found to depend on EP level. The MIP sensor was developed by electrodeposition of starch NP-RGO composite on EQCM electrode in presence of template EP. As the imprinted sites are located on the surface, high specific surface area enables good accessibility and high binding affinity to template molecule. Differential pulse voltammetry (DPV) and piezoelectrogravimmetry were used for monitoring binding/release, rebinding of template to imprinted cavities. MIP-coated EQCM electrode were characterized by contact angle measurements, AFM images, piezoelectric responses including viscoelasticity of imprinted films, and other voltammetric measurements including direct (DPV) and indirect (using a redox probe) measurements. Selectivity was assessed by imprinting factor (IF) as high as 3.26 (DPV) and 3.88 (EQCM). Sensor was rigorously checked for selectivity in presence of other structurally close analogues, real matrix (blood plasma), reproducibility, repeatability, etc. Under optimized conditions, the EQCM-MIP sensor showed linear dynamic ranges ($1-10{\mu}M$). The limit of detection 40 ppb (DPV) and 290 ppb (EQCM) was achieved without any cross reactivity and matrix effect indicating high sensitivity and selectivity for EP. Hence, an eco-friendly MIP-sensor with high sensitivity and good selectivity was fabricated which could be applied in "real" matrices in a facile manner.

• Structural Engineering and Mechanics
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• v.69 no.4
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• pp.439-455
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• 2019

This research deals with thermo-electro-mechanical buckling analysis of the sandwich nano-beams with face-sheets made of functionally graded carbon nano-tubes reinforcement composite (FG-CNTRC) based on the nonlocal strain gradient elasticity theory (NSGET) considering various higher-order shear deformation beam theories (HSDBT). The sandwich nano-beam with FG-CNTRC face-sheets is subjected to thermal and electrical loads while is resting on Pasternak's foundation. It is assumed that the material properties of the face-sheets change continuously along the thickness direction according to different patterns for CNTs distribution. In order to include coupling of strain and electrical field in equation of motion, the nonlocal non-classical nano-beam model contains piezoelectric effect. The governing equations of motion are derived using Hamilton principle based on HSDBTs and NSGET. The differential quadrature method (DQM) is used to calculate the mechanical buckling loads of sandwich nano-beam as well as critical voltage and temperature rising. After verification with validated reference, comprehensive numerical results are presented to investigate the influence of important parameters such as various HSDBTs, length scale parameter (strain gradient parameter), the nonlocal parameter, the CNTs volume fraction, Pasternak's foundation coefficients, various boundary conditions, the CNTs efficiency parameter and geometric dimensions on the buckling behaviors of FG sandwich nano-beam. The numerical results indicate that, the amounts of the mechanical critical load calculated by PSDBT and TSDBT approximately have same values as well as ESDBT and ASDBT. Also, it is worthy noted that buckling load calculated by aforementioned theories is nearly smaller than buckling load estimated by FSDBT. Also, similar aforementioned structure is used to building the nano/micro oscillators.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.5
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• pp.505-512
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• 2023

This study investigated crystal structures, microstructures, and electric-field-induced strain (EFIS) properties of Bi-based lead-free ferroelectric/relaxor composites. Bi_1/2Na_0.82K_0.18)_1/2TiO₃ (BNKT) as a ferroelectric material and 0.78Bi_1/2(Na_0.78K_0.22)_1/2TiO₃-0.02LaFeO₃ (BNKT2LF) as a relaxor material were synthesized using a conventional solid-state reaction method, and the resulting BNKT2LF powders were subjected to high-energy ball milling (HEBM) after calcination. As a result, HEBM proved a larger average grain size of sintered samples compared to conventional ball milling (CBM). In addition, the increased sintering time led to grain growth. Furthermore, HEBM treatment and sintering time demonstrated a significant effect on EFIS of BNKT/BNKT2LF composites. At 6 kV/mm, 0.35% of the maximum strain (S_max) was observed in the HEBM sample sintered for 12 h. The unipolar strain curves of CBM samples were almost linear, indicating almost no phase transitions, while HEBM samples displayed phase transitions at 5~6 kV/mm for all sintering time levels, showing the highest S_max/E_max value of 700 pm/V. These results indicated that HEBM treatment with a long sintering time might significantly enhance the electromechanical strain properties of BNT-based ceramics.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• Journal of IKEEE
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• v.17 no.1
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• pp.71-76
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• 2013

AlGaN/GaN HEMTs (High electron mobility transistors) with narrow channel were fabricated and the effect of channel scaling on the device were investigated. The devices were fabricated using e-beam lithography to have same channel length of $1{\mu}m$ and various channel width from 0.5 to $9{\mu}m$. The sheet resistance of the channel was increased corresponding to the decrease of channel width and the increase was larger at the width of sub-${\mu}m$. The threshold voltage of the HEMT with $1.6{\mu}m$ and $9{\mu}m$ channel width was -2.85 V. The transistor showed a variation of 50 mV at the width of $0.9{\mu}m$ and the variation 350 mV at $0.5{\mu}m$. The transconductance of 250 mS/mm was decreased to 150 mS/mm corresponding to the decrease of channel width. Also, the gate leakage current of the HEMT decreased with channel width. But the degree of was reduced at the width of sub-${\mu}m$. It was thought that the variation of the electrical characteristics of the HEMT corresponding to the channel width came from the reduced Piezoelectric field of the AlGaN/GaN structure by the strain relief.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.3
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• pp.513-519
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• 2019

Typically, contaminated sediments cause clogging of the drain pipe, which increases the residual water pressure in the drain pipe; this study constructed a system for improving drainage efficiency of tunnels by reducing physical and chemical obstructions through ultrasonic energy generated by a PVDF film. The developed hybrid drainage system utilized a PVDF material film fused with an existing drainage tunnel and maintenance system resulting in the ability to initialize the reverse piezoelectric effect, which was evaluated through an on site application. In order to investigate the maintenance performance of the tunnel drainage system, contaminated sediments were simulated in a drainage pipe to test the effect of ultrasonic conditions on drainage efficiency in the laboratory. As a result of applying the developed portable equipment, the ultrasonic energy was generated for about 20 minutes resulting in a reduction of 74.62% of the contaminated sediments and improving drainage efficiency. From the tunnel, acoustic pressure measurements were taken to calculate the response rate while taking into account the laboratory results. In addition, PVDF film was attached to the transverse and longitudinal side of the drainage pipes where contaminated sediments occur most often in the field tunnel. these calculations show contaminant removal was 90% effective.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.366-376
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• 1997

$CdGa_2Se_4$, epilayer of tetragonal type are grown on Si(100) substrate by hot wall epitaxy method. The source and substrate temperature is $580^{\circ}C$ and $420^{\circ}C$ respectively, and the thickness of the film is 3 $\mu \textrm{m}$. The crystallihe structure of epilayers were investigated by double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 200 K and by polar optical scattering in the temperature range 200 K to 293 K. In order to explore of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that for the samples annealed in Se vapor the photoconductive characteristics are best. Then we obtained the sensitivity of 0.98, the value of pc/dc of $9.62{\times}10^6$, the MAPD of 321 ㎽ and the rise and decay time of 9 ㎳ and 9.5 ㎳, respectively.