• 한국해안·해양공학회논문집
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• 제31권5호
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• pp.320-333
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• 2019

양빈이 수행된 해빈의 침식률 산정을 위한 물리기반 해빈 지형모형이 제시되었다. 동수역학 모형은 OpenFOAM에 기반 한 tool box인 IHFOAM으로 구성되며, Morphology 모형은 부유사를 대상으로 한 이송확산방정식, 소류사 이송을 포함한 표사 수지 개념으로부터 유도된 Exner 식으로 구성하였다. 표사 이송여부, 부유사 농도저면 경계치, 소류사 이송률 산출과정에는 Shields Diagram, 삼차원 수치 모의된 유동계 정보로부터 직접 산출된 저면 전단응력이 활용된다. 본 논문에서 제시된 지형 모형을 검증하기 위해, 경사가 1/6인 단조 해안에서의 천수과정, 쇄파과정, 이에 따른 저면 변화를 수치 모의하였다. 모의결과 비선형 천수과정에서 예상되는 왜곡되고 왜도된 저면전단응력이 비교적 정확히 모의되었다. 또한 전빈에서 진행되는 쇄파로 인해 부유되고 침식된 표사가 up-rush에 의해 후빈으로 이동되어 형성되는 swash bar와 up-rush 정점에서 방향을 바꾸어 먼 바다 방향으로 진행되는 back-wash에 의해 쓸려간 표사가 수심증가에 따라 back-wash 흐름 강도가 약해지면서 퇴적하여 형성되는 breaker bar가 성공적으로 모의되는 것을 확인할 수 있었다.

• Multiscale and Multiphysics Mechanics
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• 제1권3호
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• pp.225-231
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• 2016

The formation of silicon-on-nothing (SON) structure during an annealing process from the silicon substrate including the trench structures has been considered as an effective technique to construct the structure that has an empty space under the closed flat surface. Previous studies have demonstrated the mechanism of the formation of SON structure, which is based on the surface diffusion driven by the minimization of their surface energy. Also, it has been fragmentarily shown that the morphology of SON structure can be affected by the initial design of trench (e.g., size, number) and the annealing conditions (e.g., temperature, pressure). Based on the previous studies, here, we report a comprehensive study for the design of the cavity-embedded structure (i.e., SON structure). To do this, a dynamic model has been developed with the phase field approach. The simulation results represent that the morphology of SON structures could be detailedly designed, for example the position and thickness of cavity, the thickness of top and bottom layer, according to the design parameters. This study will give us an advantage in the effective design of SON structures.

• 한국해안·해양공학회논문집
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• 제33권4호
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• pp.168-178
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• 2021

방파제 형식에 따른 반사율 변화가 해저지형에 미치는 영향을 살펴보기 위한 수치 모의를 수행하였다. 수치 모형은 OpenFoam 기반 tool box인 OlaFlow와 물리기반 지형모형[SeoulFoam]으로 구성하였으며, 이 과정에서 침·퇴적으로 인해 변형을 겪는 해저지형과 내습하는 파랑 간의 상호작용은 Dynamic Mesh를 활용하여 기술하였다. 다양한 반사 특성을 보이는 사석 경사제, 직립제, 곡면 슬릿 케이슨 방파제는 서로 다른 정상파를 결과하였으며, 이는 해저지형에 상당한 영향을 미치는 것을 확인하였다. 이러한 결과는 저면 유속이 상대적으로 큰 정상파 마디[node]에서 연행된 모래가 경계층 drift에 의해 배[antinode]로 이송된다는 Nielsen(1993)의 연구 결과와도 일치한다. 이렇게 재배치되는 모래로 정상파의 배[antinode]에는 sand wave의 마루, 마디[antinode] 인근에는 sand wave의 곡이 형성되었으며, sand wave 진폭은 반사계수가 우월한 곡면 슬릿 케이슨에서 가장 크게 관측되었다. 이러한 현상은 반사계수가 큰 경우 마디에서의 저면 유속 증가로 상대적으로 많은 모래가 연행되어 발생하는 것으로 판단된다.

• Progress in Superconductivity
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• 제6권1호
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• pp.84-88
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• 2004

The polycrystalline superconductor $SmBa_2$$Cu_3$$O_{x}$ is fabricated, and intergranular magnetic properties are investigated using the critical state model, from which some useful parameters such as the critical current density and the intergranular volume fraction are obtained. The curve fitting for M-H hysteresis loop shows that the intergranular critical current density of $SmBa_2$$Cu_3$$O_{x}$ / decreases in the form of ($1-T/T_{c}$ )$^{1.5}$ . The intergranular volume fraction is influenced by granular morphology. From SEM image, the grains of $SmBa_2$$Cu_3$$O_{x}$ are found to be randomly shaped. This mean:; that the intergranular volume fraction of $SmBa_2$$Cu_3$$O_{x}$ / should be smaller than those of superconductors, of which grains are plate-shaped such as Tl-based superconductor.

• 대한기계학회논문집B
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• 제29권8호
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• pp.921-926
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• 2005

In the idealized model problem of the interaction between a planar travelling shock and a symmetric vortex, the physics of shock distortion and quadrupole sound generation are well known to many researchers. However, the authors have distinguished the weak waves reflected and transmitted by the complicated photograph images obtained from a shock tube experiment. In this paper, we introduces a parametric study based on Navier-Stokes simulation and Rankin vortex model to see the difference of shock deformation shapes. Four combination of the strength of shock and vortex are respectively selected from a parameter plane of shock and vortex strength extended to the strong vortex region. The result shows clearly discernable wave morphology for the main parameters, which is not yet explicitly mentioned by other researchers.

• 천문학회보
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• 제40권2호
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• pp.50.2-50.2
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• 2015

The Horizon Run 4 is a huge cosmological simulation intended for the study of evolution of dark matter halos in a side of volume of 3150 h-1 Mpc. Using the halo merger trees of most bound particles, we test various models on the survivals of satellites in clusters and will compare them with observed satellite galaxies in a one-to-one correspondence model. We estimate the abundances of central and satellite subhalos, and compare them with the SDSS main-galaxy group catalogue provided by Tempel et al. (2014). Based on these comparisons we will study the mass-to-light relations, environmental effects on morphology and luminosity function, halo occupations in clusters, and nonlinear dynamics of clusters of galaxies.

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.516-521
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• 2014

An excellent hydrophobic surface has a high contact angle over 147 degree and the contact angle hysteresis below $5^0$ was produced by using roughness combined with hydrophobic PTFE coatings, which were also confirmed to exhibit an extreme adhesion to glass substrate. To form the rough surface, the glass was etched by Ar-plasma. A very thin PTFE film was coated on the plasma etched glass surface. Roughness factors before or after PTFE coating on the plasma etched glass surface, based on Wensel's model were calculated, which agrees well with the dependence of the contact angle on the roughness factor is predicted by Wensel's model. The PTFE films deposited on glass by using a conventional rf-magnetron sputtering. The glass substrates were etched Ar-plasma prior to the deposition of PTFE. Their hydrophobicities are investigated for application as a anti-fouling coating layer on the screen of displays. It is found that the hydrophobicity of PTFE films mainly depends on the sputtering conditions, such as rf-power, Ar gas content introduced during deposition. These conditions are closely related to the deposition rate or thickness of PTFE film. Thus, it is also found that the deposition rate or the film thickness affects sensitively the geometrical morphology formed on surface of the rf-sputtered PTFE films. In particular, 1,950-nm-thick PTFE films deposited for 30 minute by rf-power 50 watt under Ar gas content of 20 sccm shows a very excellent optical transmittance and a good anti-fouling property and a good durability.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.