• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.67-67
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• 2011

Compound semiconductor/CNTs composites have shown considerably improved efficiency improvement in photovoltaic devices, which is often attributed to two different factors. One is the formation of efficient electronic energy cascade structures. The other effect of CNTs on the performance of photovoltaic devices is the decrement of interfacial resistance. The interfacial resistances at n-type/ p-type materials and/or n-type materials/TCO electrode are reduced by an outstanding electrical property of CNTs. In addition to the effects of CNTs, we report the third reason for increment of efficiency in photovoltaic devices by CNT's well-known electrical field enhancement effects. The improved ${\beta}$ values in reverse-FE currents of CIGS electrode with SWNTs layers indicate the enhancement of electrical field in photovoltaic devices, which implies the acceleration of the electron transfer rate in the cell. Due to the formation of an efficient electronic energy cascade structure and the decrease of the interfacial resistance as well as the improvement of the electrical field in the photovoltaic devices, the power conversion efficiency of electrochemically deposited superstrate-type CIGS solar cells was increased 24.3% in the presence of SWNTs and showed 10.40% conversion efficiency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.245.2-245.2
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• 2013

Solution processed organic photovoltaic devices have relatively less attention compared to polymer photovoltaic devices even though they have high possibility to be developed because they have both advantages of polymer and organic, such as solution processable, no synthetic batch dependence of photovoltaic performance, high purity and high charge carrier mobility as well as relatively high efficiency (~7%). In addition, solution processed organic photovoltaic devices have an advantage of easiness to study the relationship between the molecular structure and photovoltaic performance due to its simple structure. In this work, five isoindigo based low band gap donor-acceptor-donor (D-A-D) small molecules with different electron donating strength were synthesized for investigating the relationship between the molecular structure and photovoltaic performance, especially, investigating the effects of different electron donating effect of donor group in isoindigo backbone to photovoltaic device performance. The variation of electron donating strength of donor group strongly affected the optical, thermal, electrochemical and photovoltaic device performances of isoindigo organic materials. The highest power conversion efficiency of ~3.2% was realized in bulk heterojuction photovoltaic device consisted of the ID3T as donor and PC70BM as acceptor. This work demonstrates the great potential of isoindigo moieties as electron deficient units as well as guideline for synthesis of donor-acceptor-donor (D-A-D) small molecules for realizing highly efficient solution processed organic photovoltaic devices.

• 전기학회논문지
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• 제60권8호
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• pp.1485-1491
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• 2011

This paper deals with the technical problems for the protection devices, by simulating test facilities of protection coordination for Photovoltaic systems. In order to analyze the operation characteristics for the protection devices in the case that the Photovoltaic systems with bi-directional power supply are located in the feeder, this paper proposes the test facilities composed of model distribution system, protection device and model Photovoltaic systems. By performing the simulation for operation characteristics for the protection devices based on the test facilities, this paper presents the malfunction mechanism for the protection devices. The test results show that this paper is practical and effective for the technical guideline for the Photovoltaic systems.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.79-79
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• 2013

Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 추계학술대회 논문집
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• pp.63-66
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• 2001

This paper aims at developing remote control system to control and monitor distributed various devices such as photovoltaic Inverter system through internet. TCP/IP (Transmission Control Protocol/Internet Protocol) and photovoltaic inverter system operated in a row are adopted for network management protocol and applied device, respectively. For controlling and monitoring distributed devices in real-time, java-environment software is constructed. Also, HelloDevice, general-use interface controller between network device and applied device is proposed. Finally, serial communication such as RS-232C is used between controller and applied device.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.266-269
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• 2012

The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device. Use this number of the devices are need to high voltage and low on-state voltage drop. And then in this paper design of field stop IGBT is insert N buffer layer structure in NPT planar IGBT and optimization design of field stop IGBT and trench field stop IGBT, both devices have a comparative analysis and reflection of the electrical characteristics. As a simulation result, trench field stop IGBT is electrical characteristics better than field stop IGBT.

• Macromolecular Research
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• 제14권6호
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• pp.630-633
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• 2006

In heterojunction photovoltaic devices of $ITO/TiO_2/poly$(3-alkylthiophene)/Au, the photo current was characterized at different temperatures for different alkyl chain lengths and regioregularities: regiorandom, regioregular poly(3-hexylthiophene), and regioregular poly(3-dodecylthiophene). The regioregularity and alkyl chain length affected the photovoltaic characteristics due to differences in hole-carrier transportation. The drift charge mobilities of these devices were analyzed by the space-charge-limited current theory using the relation between the dark current and the bias voltage. The photocurrent in the devices based on poly(3-alkylthiophene)s decreased rapidly below the temperature at which the drift charge mobility was $10^{-5}\;cm^2/V{\cdot}s$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
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• pp.1672-1674
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• 2005

The PV arrays were designed as sunshade devices at the building in the KIER(Korea Institute of Energy Research). The arrays are shaded by the above placed devices. In this paper, it was analyzed that the performance and characteristic of the BIPV system by partial shading could reliably be calculated with Solar Pro.

• 한국전기전자재료학회논문지
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• 제23권7호
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• pp.509-512
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• 2010

The thermal distribution of 2D and 3D p-n photovoltaic diode structures with and without surface texturing has been studied. By analysis of the numerical simulation results of the I-V characteristics and lattice temperature distributions the effect of different texturing structures on the characteristics of silicon p-n photovoltaic devices has been studied systematically. The efficiency of the device having surface texturing shows more than ~2% enhancement compared to the reference devices which did not have texturing. In addition, the effect of the density of the texturing groove has been studied and it has been confirmed that the texturing structure not only improves the light trapping but also plays an important role in the heat radiation.

• Current Photovoltaic Research
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• 제5권3호
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• pp.89-94
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• 2017

We have examined the issues on the measurement of bifacial photovoltaic(PV) devices that should be considered in order to ensure a measurement accuracy beyond a certain level and the comparability between the bifacial PV devices. Based on the results of various experiments and previous studies, solutions for these measurement issues are suggested. The most significant technical issues in the performance measurement of the bifacial PV devices are 1) elimination of the effect due to the light reflection on the sample holder surface and 2) the measurement of the expected power generation gain in outdoor operation. The effect due to the light reflection on the sample holder surface can be eliminated by using an anti-reflective sample holder. In case of a reflective sample holder, if the bifacial device have a linear characteristic with respect to the irradiance of incident light, it has been confirmed (through some previous studies and additional experiment) that exact measurement results can be obtained by the correction of the measurement data. In addition, it was also confirmed that the expected power generation gain in the outdoor operation can be obtained by three different methods along with the basic concepts of the bifaciality coefficient, the albedo, and the effective front irradiance.