• 한국태양에너지학회 논문집
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• 제30권6호
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• pp.73-80
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• 2010

This study was conducted to estimate the relative performance of modules with changed characteristics due to long term exposure to the outdoor environment, with a specially made test device for simultaneous measurement of real time power output from the photovoltaic array, taking into account the inclined panel, direct irradiation, power being generated, temperature as well as the optimal analysis timing. In terminology description, M is an abbreviation of module and Group A, Group B are 10 modules series connection (1~10 of M), (11~20 of M) for each of them respectively. The overall mean voltage difference of M-18 with the lowest power output and M-14 with the highest output is-2.13V and it was identifiable that voltage difference was more concentrated to Group B. In addition, in case of M-2 and M-7, M-8, when compared with M-14, the overall mean voltage difference was -0.92V, -1.56 and -0.91V respectively showing the more concentration to Group A. When the temperature of module went up by $1^{\circ}C$, the mean voltage was reduced by 0.35V. For current, Group A was lower than Group B by-0.022A and the ratio of each group was 49.68% and 50.32% respectively, presumably the module with deteriorated properties were more concentrated to Group A relatively. From the comparison of relations with the comprehensive accumulation, M-2, M-7, M-8, M-16 and M-18 were those with deterioration of performance to the worst, thereby requiring precision examination. In comparative efficiency, M-14 was the most excellent one as 12.19% while M-18 as 10.53% was identified that its efficiency was comparatively rapidly reduced.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.427-427
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• 2016

Organic-inorganic hybrid perovskite have attracted significant attention as a new revolutionary light absorber for photovoltaic device due to its remarkable characteristics such as long charge diffusion lengths (100-1000nm), low recombination rate, and high extinction coefficient. Recently, power conversion efficiency of perovskite solar cell is above 20% that is approached to crystalline silicon solar cells. Planar heterojunction perovskite solar cells have simple device structure and can be fabricated low temperature process due to absence of mesoporous scaffold that should be annealed over 500 oC. However, in the planar structure, controlling perovskite film qualities such as crystallinity and coverage is important for high performances. Those controlling methods in one-step deposition have been reported such as adding additive, solvent-engineering, using anti-solvent, for pin-hole free perovskite layer to reduce shunting paths connecting between electron transport layer and hole transport layer. Here, we studied the effect of alkali metal halide to control the fabrication process of perovskite film. During the morphology determination step, alkali metal halides can affect film morphologies by intercalating with PbI2 layer and reducing $CH3NH3PbI3{\cdot}DMF$ intermediate phase resulting in needle shape morphology. As types of alkali metal ions, the diverse grain sizes of film were observed due to different crystallization rate depending on the size of alkali metal ions. The pin-hole free perovskite film was obtained with this method, and the resulting perovskite solar cells showed higher performance as > 10% of power conversion efficiency in large size perovskite solar cell as $5{\times}5cm$. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) are analyzed to prove the mechanism of perovskite film formation with alkali metal halides.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2012년도 춘계학술논문집 2부
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• pp.512-516
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• 2012

Recently the Korean government's green energy growth policy has been taken at the national level due to the sufficient supply of renewable energy. Some specific technique should be taken in consideration for the operation of the grid voltage and power quality management. In this case, there may have some chance of operational problems. Typical problems arise when grid-connected solar power produced by Pacific sunshine. The power flow in the reverse direction can create overvoltage on the distribution line and gives value of malfunction on the system. Line voltage and overvoltage adjustment practice can stop these symptoms occurred. Under these circumstances, this paper presents an interconnection test devices for photovoltaic(PV) systems composed of distribution system simulator, PV system simulator and control and monitoring systems using the LabVIEW S/W, and simulates the customer voltage characteristics considering the 3 parameters on the introduction capacity for PV systems, system configuration and Power factor. This paper also proposes a new calculation algorithm for voltage profile to make comparison between calculation values and test device values. The results show that the simulation results for the normal operation characteristics of PV systems which are very practical and effective.

• 한국결정성장학회지
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• 제8권2호
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• pp.269-277
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• 1998

수소화된 비정질규소 박막의 결정화 방법은 물질의 질과 후속으로 제작되는 성능을 결정한다. 본 논문은 다양한 기판위에 성장된 비정질규소 박막의 결정화 특성조사와 고용체 형성 금속 박막의 유.무에 따른 결정화 효과를 분석하였다. 다양한 기판조사로부터 Mo 기판이 비정질규소 박막을 성장하기위해 선택되었다. 고용체 형성 금속을 사용하지않은 경우 $1100^{\circ}C$ 열처리후에 결정립의 크기가 $0.8{\mu}m$에 달하는 다결정을 얻었다. 결정화 온도를 줄이기 위해 고용체 형성 금속인 Au, Al, Ag등을 사용하였다. 금속 Au를 사용하여 $700^{\circ}C$ 열처리 후에 결정입경 크기가 $10{\mu}m$ 이상이며 (111) 면 우선배향 특성을 갖는 다결정규소 박막이 달성되었다. 광전소자 응용을 위하여 규소박막과 고용체를 형성하는 금속종류, 금속두께 등의 결정화 영향을 조사하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.305-305
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• 2010

It is known that a pulse of electrons of high kinetic energy (1-3 eV) in metals can be generated with the deposition of external energy to the surface such as in the absorption of light or in exothermic chemical processes. These energetic electrons are not in thermal equilibrium with the metal atoms and are called "hot electrons" The concept of photon energy conversion to hot electron flow was suggested by Eric McFarland and Tang who directly measured the photocurrent on gold thin film of metal-semiconductor ($TiO_2$) Schottky diodes [1]. In order to utilize this scheme, we have fabricated metal-semiconductor Schottky diodes that are made of Pt or Au as a metallic layer, Si or $TiO_2$ as a semiconducting substrate. The Pt/$TiO_2$ and Pt/Si Schottky diodes are made by PECVD (Plasma Enhanced Chemical Vapor Deposition) for $SiO_2$, magnetron sputtering process for $TiO_2$, e-beam evaporation for metallic layers. Metal shadow mask is made for device alignment in device fabrication process. We measured photocurrent on Pt/n-Si diodes under AM1.5G. The incident photon to current conversion efficiency (IPCE) at different wavelengths was measured on the diodes. We also show that the steady-state flow of hot electrons generated from photon absorption can be directly probed with $Pt/TiO_2$ Schottky diodes [2]. We will discuss possible approaches to improve the efficiency of photon energy conversion.

• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.569-574
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• 2014

Inverted bulk hetero-junction polymer solar cells (iPSC) composed of P3HT/PC61BM blends on the ZnO modified with benzoic acid derivatives-based self-assembled monolayers (SAM) are fabricated. Compared with the device using the pristine ZnO, the devices with ZnO surface modified SAMs derived from benzoic acid such as 4-(diphenylamino)benzoic acid (DPA-BA) and 4-(9H-carbazol-9-yl)benzoic acid (Cz-BA) as an electron transporting layer show improved the performances. It is mainly attributed to the favorable interface dipole at the interface between ZnO and the active layer, the eective passivation of the ZnO surface traps, decrease of the work function and facilitating transport of electron from PCBM to ITO electrode. The power conversion eciency (PCE) of iPSCs based on DPA-BA and Cz-BA treated ZnO reaches 2.78 and 2.88%, respectively, while the PCE of the device based on untreated ZnO is 2.49%. The open circuit voltage values ($V_{oc}$) of the devices with bare ZnO and SAM treated ZnO are not much different. Whereas, higher the fill factor (FF) and lower the series resistance ($R_s$) are obtained in the devices with SAMs modification.

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.124-129
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• 2015

Organic electronics are the domain in which the components and circuits are made of organic materials. This new electronics help to realize electronic and optoelectronic devices on flexible substrates. In recent years, organic materials have replaced conventional semiconductors in many electronic components such as, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic photovoltaic (OPVs). It is well known that organic light emitting diodes (OLEDs) have many advantages in comparison with inorganic light-emitting diodes LEDs. These advantages include the low price of manufacturing, large area of electroluminescent display, uniform emission and lower the requirement for power. The aim of this paper is to model polymer LEDs and OLEDs made with small molecules for studying the electrical and optical characteristics. The purpose of this modeling process is, to obtain information about the running of OLEDs, as well as, the injection and charge transport mechanisms. The first simulation structure used in this paper is a mono layer device; typically consisting of the poly (2-methoxy-5(2'-ethyl) hexoxy-phenylenevinylene) (MEH-PPV) polymer sandwiched between an anode with a high work function, usually an indium tin oxide (ITO) substrate, and a cathode with a relatively low work function, such as Al. Electrons will then be injected from the cathode and recombine with electron holes injected from the anode, emitting light. In the second structure, we replaced MEH-PPV by tris (8-hydroxyquinolinato) aluminum (Alq₃). This simulation uses, the Poole-Frenkel -like mobility model and the Langevin bimolecular recombination model as the transport and recombination mechanism. These models are enabled in ATLAS- SILVACO. To optimize OLED performance, we propose to change some parameters in this device, such as doping concentration, thickness and electrode materials.

• 한국산학기술학회논문지
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• 제11권11호
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• pp.4529-4536
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• 2010

본 논문에서는 배전계통 모의장치와 태양광전원 모의장치, LabVIEW를 이용한 감시제어장치로 구성된 태양광전원 계통연계 시험장치를 제작하여, 태양광전원의 연계용량과 계통의 선로 구성특성, 역율(역율1, 지상/진상역율)의 3가지 Parameter에 대한 태양광전원의 정상상태 운용특성을 모의하였다. 즉, 태양광전원의 연계 운용이 배전계통(수용가)에 미치는 영향과 배전계통이 태양광전원에 미치는 영향을 분석하여, 태양광전원의 계통연계 운용 시에 발생 가능한 기술적인 사항을 검토하였다. 그리고 계통연계 시험장치의 실험 결과치를 분석하기 위하여, 태양광전원 대응형 전압강하 계산 알고리즘을 제안하여, 이론적인 값과 시험치를 비교하여 태양광전원의 정상상태 특성에 대한 시험결과의 유용성을 확인하였다.

• 전자공학회논문지SC
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• 제47권6호
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• pp.6-11
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• 2010

태양광발전은 발전 셀의 특성상 태양광의 일사량에 따라 발전량이 달라지며, 태양과 셀 단면이 이루는 각도에 의하여 발전량에 차이를 가져온다. 일사량은 경도와 위도로 분류되는 지구표면의 위치와 계절에 의하여 결정되는 반면, 태양과 발전 셀의 단면이 이루는 각도는 고정된 위치에서 태양광발전 장치의 각도를 가변함으로서 변경가능하다. 실용적인 발전효율 향상 방안으로 태양광 발전 장치의 각도 조절방법이 많이 사용되며, 이를 위한 태양추적장치에 대한 연구가 활발하다. 본 연구에서는 태양광발전 효율향상을 위한 태양추적시스템에 관한 연구를 진행하였다. 본 연구의 태양추적시스템은 광도전효과(Photo conductive effect)를 이용한 반도체 포토센서를 이용하여 태양의 위치확인을 위한 센서부를 구성하였으며, 센서의 출력신호를 마이크로프로세서를 이용하여 해석하고, 태양을 추적하기위한 구동부 제어신호를 발생시켰다. 태양추적시스템의 성능분석을 위한 태양발전장치(10W)를 제작하였으며, 실험을 통하여 연구에서 설계및제작된 태양추적장치의 유용성을 확인하였다.