• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.49-52
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• 2009

Practical building integrated photovoltaic system built by Kolon E&C has been monitored and evaluated with respect to power generation, which was installed in Deokpyeong Eco Service Area in Deokpyeong, Gyeonggi, Korea. The amorphous silicon transparent PV module in this BIPV system has 44Wp in power output per unit module and 10% of transmittance with the unit dimension with $980mm{\times}950mm$. The BIPV system was applied as the skylight in the main entrance of the building. This study provided the database for the practical application of the transparent thin-film PV module for BIPV system through 11 month monitoring as well as various statistical analyses such as monthly power output and insolation. Average monthly power output of the system was 52.9kWh/kWp/month which is a 60% of power output of the previously reported data obtained under $30^{\circ}$of an inclined PV module facing south(azimuth=0). This lower power output can be explained by the installation condition of the building facing east, west and south, which was resulted from the influence of azimuth.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.19-22
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• 2009

A non-vacuum process for fabrication of $CuIn_xGa_{1-x}Se_2$ (CIGS) absorber layer from the corresponing Cu, In, Ga solution precursors was described. Cu, In, Ga precursor solution was prepared by a room temperature colloidal route by reacting the starting materials $Cu(NO_3)_2$, $InCl_3$, $Ga(NO_3)$ and methanol. The Cu, In, Ga precursor solution was mixed with ethylcellulose as organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of Cu, In, Ga solution with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents and to burn the organic binder material. Subsequently, the resultant CIG/Mo/glass sample was selenized in Se evaporation in order to get a solar cell applicable dense CIGS absorber layer. The CIGS absorber layer selenized at $530^{\circ}C$ substrate temperature for 1h with various metal organic ratio.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.8
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• pp.1512-1518
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• 2009

Recently, new dispersed power sources such as photovoltaics, wind power, fuel cell etc. are energetically interconnected and operated in the distribution systems, as one of the national projects for alternative energy. This paper deals with the optimal countermeasures for the mal-function of protective devices at primary feeder in distribution systems when new power sources like photovoltaic (PV) systems are interconnected, based on the symmetrical components of short circuit studies. When new power sources are considered to be interconnected to distribution systems, bi-directional power flow and interconnection transformer connection of new power sources may cause the operation problems of protective devices (mainly re-closer), since new power sources can change typical characteristics of distribution systems. Therefore, this paper shows an analysis skill of the mal-functional mechanism of protective relay and proposes the optimal solution for the mal-function problem using the symmetrical components of fault analysis. And, this paper also shows the effectiveness of proposed method by the simulation at the field distribution systems.

• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.1995-2003
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• 2014

Power semiconductor devices have been the major backbone for high-power electronic devices. One of important parameters in view of power semiconductor devices often characterize with a high breakdown voltage. Therefore, many efforts have been made, since the development of the Insulated Gate Bipolar Transistor (IGBT), toward having higher level of breakdown voltage, whereby the typical design thereof is focused on the structure using the field ring. In this study, in an attempt to make up more optimized field-ring structure, the characteristics of the field ring were investigated with the use of theoretical arithmetic model and methodologically the design of experiments (DOE). In addition, the IGBT having the field-ring structure was designed via simulation based on the finding from the above, the result of which was also analyzed. Lastly, the current study described the trench field-ring structure taking advantages of trench-etching process having the improved field-ring structure, not as simple as the conventional one. As a result of the simulation, it was found that the improved trench field-ring structure leads to more desirable voltage divider than relying on the conventional field-ring structure.

• Journal of the Korean Solar Energy Society
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• v.31 no.3
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• pp.67-72
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• 2011

The aim of this study is to evaluate how much would the building energy consumption be saved by applying DSSC BIPV window which is possible to control the transmittance and express the color in the office building. For this, physical characteristics such as transmittance and reflectance, U-factor of DSSC areanalyzed and an annual energy consumption that is connected to dimming control is calculated when DSSC BIPV window is applied by alternate clear window system. As a result, It is possible to reduce the anannual energy consumption as much as4.1% by just change the clear double window system to DSSC BIPV double window system because the major factor to reduce energy consumption in the office that has much cooling load than other building is SHGC. When the thermal insulation properties of DSSC BIPV window with low-e coating and making triple window are improved, energy saving ratio is about 9%. Plus, energy saving ratio of 25~28% in lighting energy consumption is possible when the dimming control system with DSSC BIPV window is adopt.

• 한국태양에너지학회:학술대회논문집
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• 2008.04a
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• pp.55-60
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• 2008

This study is on the analysis of power output of transparent thin-film PV windows which are integrated into the building envelope instead of traditional windows. 3 installation angles of vertical, horizontal and $30^{\circ}C$ inclination are investigated. To measure power output of PV windows, full scale mock-up house was designed and constructed. The power performance of PV window system was analyzed for horizontal angle, declination angle and vertical angle according to incline angle. Monitoring data are gathered from November 2006 to August 2007 and statistical analysis is performed to analysis a characteristics of power performance of transparent PV windows. Results show that annual power output of PV window with horizontal angle is 844.4kWh/kWp/year, declination angle 1,060kWh/kWp/year and vertical angle 431.6 kWh/kWp/year.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.12B no.1
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• pp.24-30
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• 2002

The developments of the solar and the wind power energy are necessary since the future alternative, energies that have no pollution and no limitation are restricted. Currently power generation system of MW scale has been developed, but it still has a flew faults with the weather condition. In order to solve these existing problem combined generation system of photovoltaic(400W) and wind power generation system(400W) was suggested. It combines wind power and solar energy to have the supporting effect from each other. However, since even combined generation system cannot always generate stable output with ever-changing weather condition, power storage apparatus that uses elastic energy of spiral spring to combined generation system was also added far the present study. In an experiment, when output of combined generation system gets lower than 12V(charging voltage), power was continuously supplied to load through the inverter by charging energy obtained from generating rotary energy of spiral spring operates in small scale generator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.71-72
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• 2008

This paper describes a circuit based simulation model for a Photovoltaic(PV) cell in order to estimate the electrical behavior of the solar cell module with changes of environmental parameters such as shunt resistance, series resistance, temperature and irradiance. An accurate I-V model of PV module is presented based on the Shockley diode model. The general model was implemented on Matlab scrip file, and used irradiance and temperature as variables and outputs of the I-V characteristic. A typical PV module was used for the evaluation, and results was compared with reference taken directly from the manufacturer's published curves leading to excellent agrement with the theoretical prediction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.701-706
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• 2013

We have focused on the conversion efficiency of CIGS thin film solar cell prepared by co-evaporation method as well as the optimization of process condition. The total thickness of back electrode was fixed at 1 ${\mu}m$ and the structural, electric and optical properties of CIGS thin film were investigated by varying the thickness of Mo:Na bottom layer from 0 to 500 nm. From the experimental results, the content of Na was appeared as 0.28 atomic percent when the thickness of Mo:Na layer was 300 nm with compactly densified plate-shape surface morphology. From the XRD measurements, (112) plane was the strongest preferential orientation together with secondary (220) and (204) planes affecting to the crystallization. The lowest roughness and resistivity were 2.67 nm and 3.9 ${\Omega}{\cdot}cm$, respectively. In addition, very high carrier density and hole mobility were recorded. From the optimization of Mo:Na layer, we have achieved the conversion efficiency of 9.59 percent.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.743-746
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• 2003

We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.