• 대한상한금궤의학회지
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• 제11권1호
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• pp.103-111
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• 2019

Objective : The purpose of this study was to report the improvement in a patient with edema treated by herb medication based on Shanghanlun provisions. Methods : According to 'A disease pattern identification diagnostic system based on Shanghanlun provisions (DPIDS)', a patient was diagnosed with Taeyang-byung, no. 46 provision and was administered with Mahwang-tang herbal medication for 30 days. The Numeric rating scale (NRS) was used to estimate the response. Results : The NRS score changed from 10 to 1 and the edema disappeared by 46th provision of Mahwang-tang selected according to Shanghanlun provisions. Conclusions : This case report suggests that the two words in the 46th provision of Shanghanlun, '陽氣重, 無汗' (Yang qi heavy, Absence of sweating) indicate a close relationship between photosensitivity and absence of sweating, thereby affecting edema in this case.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.492-496
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). In this paper, We investigated dopants(As, Cl) composition rate to improve dark resistivity and transport properties of charge carrier in amorphous selenium using by direct X-ray conversion material. Alloying a-Se with As inhibits the recrystallization of a-Se but introduces undesirable deep hole traps. then doping with Cl(in the ppm range) compensates for the deep hole traps. We investigated their composition rate in various doping conditions and then obtained optimum dopant composition rate. The result was Se-As 0.3%-c] 30 ppm and X-ray Sensitivity was 0.57 pC/$pixel{\cdot}mR$ at $137{\mu}m{\times}137{\mu}m$ Pixel area.

• Macromolecular Research
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• 제12권4호
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• pp.352-358
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• 2004

For their application as one-component photoresists, we prepared epoxy terpolymers containing oxime-urethane and benzophenone groups by the radical polymerization of glycidyl methacrylate (GMA), metha-cryloxyethyl benzophenoneoxime urethane (MBU), and N-(4-benzoyl)phenylmaleimide (BPMI). The terpolymer composition was optimized to provide the most photosensitive photoresist. The photo-decomposition reaction of the oxime-urethane groups in the terpolymer was monitored by UV absorption spectroscopy, and the photo-crosslinking reaction of the epoxy terpolymer was observed by measuring the normalized thickness. The photosensitivity of the epoxy terpolymer increased as the amount of BPMI and MBU units increased up to 16 and 24 mol%, respectively. Among the terpolymers we prepared, terpolymer T-II(contents of GMA, MBU, BPMI are 75, 19, 6.1 mole%, respectively) exhibited the highest photosensitivity ( $D_{c}$ $^{0.5}$ = 430 mJ/$\textrm{cm}^2$) and had a moderate contrast (${\gamma}$$^{p}$ = 1.23). Negative-tone micropatterns having a line width of ca. 10 ${\mu}{\textrm}{m}$ were obtained by developing the system with chloroform.m.

• 센서학회지
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• 제2권1호
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• pp.29-34
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• 1993

본 연구에서는 영상센서를 위해 a-Si : H 광다이오드를 제작하고 그 특성을 조사하였다. a-SiN : H와 p-a-Si : H막의 차단층이 없는 ITO/a-Si : H/Al 광다이오드의 광감도는 5 V의 인가전압에서 0.7로 나타났으며 가시광영역에서의 분광감도는 620 nm의 파장에서 가장 높게 나타났다. ITO/a-SiN : H/a-Si : H/p-a-Si : H/Al 광다이오드의 암전류는 정공차단막과 전자차단막의 작용으로 인하여 10V의 인가전압까지 1.5pA이하로 억제되었다. 또한 광감도는 3 V의 인가전압에서 약 1로 가장 높게 나타났으며 분광감도는 540 nm의 파장에서 최대응답을 보였다.

• 대한전자공학회논문지
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• 제23권5호
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• pp.699-705
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• 1986

Sb2S3 thin films were fabricated by vacuum evaporation of compound Sb2S3 at a pressure of 10**-5 torr. and in argon ambient. Then, their electrical and photoconductive properties were investigated. The Sb2S3 glass-layer showed maximum photosensitivity at the deposition rate of 250\ulcornersec, and Sb2S3 porous layer had mininum dielectric constant of 1.5 at the deposition rate of 0.3 um/sec and argon partial pressure of 0.2torr. Sb2S3 multi-layers were prepared at the different thickness ratio (B/A) to find the proper structural property suited for camera pick-up tube. Here, A is the sum of the thickness of Sb2S3 porous layer and Sb2S3 fine grain layer, and B is the thickness of Sb2S3 fine grain layer. As a result, photosensitivity had a peak value at the thickness ratio (B/A) of 60%.

• 비파괴검사학회지
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• 제25권5호
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• pp.339-342
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• 2005

광섬유 센서 구성을 위한 장주기 광섬유 격자(Long-Period Fiber Grating, LPFG)는 코어 모드로 진행하는 빔이 위상 정합 조건(Phase Matching Condition)에 의해 특정 파장에서 클래딩 모드와 커플링이 일어나는 광소자이다. 공진 파장과 커플링의 세기는 온도, 스트레인, 주변 굴절 지수 등에 의해 민감하게 변화하는 특성을 이용하여 광섬유 센서에 넓게 응응될 수 있다 일반적으로 광섬유 격자는 광섬유 코어를 자외선에 노출시킴으로서 굴절률의 주기적인 변화가 유도되는 원리, 즉 광민감성 (Photosensitivity)에 기초를 두고 있으며 광민감성을 가진 격자제조용 광섬유 제작은 광섬유 격자 연구에 대단히 중요한 부분이다. 이 논문에서는 보론 첨가의 양에 의한 코어와 클래딩의 굴절률 차 변화와 그것에 따른 장주기 광섬유 격자의 온도 및 구부림 특성 변화를 분석하였다. 보론의 양이 증가할수록 코어와 클래딩의 굴절률 차가 줄어드는 것$(1.69{\times}10^{-4}/SCCM)$을 실험을 통해 알 수 있었고, 그로 인해 보론의 음의 온도 의존성으로 인해 장주기 광섬유 격자의 온도 의존성이 억제됨$(0.01145nm/^{\circ}C/SCCM)$을 확인할 수 있었다. 또한, 보론의 증가로 인해 코어와 클래딩의 굴절률차가 줄어들수록 장주기 광섬유 격자는 구부림에 더 민감함을 알 수 있었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2000년도 제1회 신소재 심포지엄(차세대 광소재 심포지엄)
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• pp.77-85
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• 2000

Photosensitive amorphous materials are attractive for the formation of several optical elements by a specific laser beam irradiation. For example the optical fiber gratings prepared by UV laser irradiation are one of the key elements for the recent worldwide progress of wavelength division mutiplexing optical fiber network. This paper reviews the representative studies on the photosensitive materials and the origin of photosensitivity in amorphous oxide materials.

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 하계학술발표회
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• pp.102-103
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• 2002

금속 입자들이 채워진 유리는 광 호변성 물질로써 광 저장 디스크, 광 도파로 그리고 도파로 레이저, 광 스위치 등의 다양한 응용분야에 이용될 수 있음이 여러 연구진들에 의해서 밝혀져 왔다. [1] 광 호변성이란 외부에서 입사되는 광에 의해서 유리의 색이 변색되는 현상인데 이는 유리에 함유된 물질들이 광이나 열에 의해서 변화하기 때문이다. Wood 등은 열처리와 불꽃에 의한 가열 등을 이용하여 은 입자를 작은 입자로 쪼개고. 이를 엑시머 레이저로 열처리시키면 은 입자가 분해된다는 것을 보였다. (중략)

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.968-971
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• 2005

Amorphous silicon photo diodes incorporated in a polyLED stack are applied in in pixel opticalfeedback to compensate for polyLED degradation. Large quantum efficiencies and perfect linearity are demonstrated. The photosensitivity is in agreement with optical modeling of the stack. A new scheme for ambient and cross talk light cancellation is given.