• Title/Summary/Keyword: photoacryl

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A Study on the Electrical Characteristics of Organic Thin Film Transistor using Photoacryl as Gate Dielectric Layer (Photoacryl을 게이트 절연층으로 사용한 유기 박막 트랜지스터의 전기적 특성에 관한 연구)

  • 김윤명;표상우;심재훈;김영관;김정수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.247-250
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    • 2001
  • Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. We have fabricated organic thin film transistors(OTFTs) and discuss electrical characteristics of the devices. For the gate dielectric layer, OPTMER PC403 photoacryl(JSR Co.) was spin-coated and cured at 220$^{\circ}C$. Electrical characteristics of the device were investigated, where the photoacryl dielectric layer thickness and pentacene active layer thickness were about 0.6$\mu\textrm{m}$ and 800${\AA}$.

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A Study on the Electrical Characteristics of Organic Thin Film Transistor using Photoacryl as Gate Dielectric Layer (Photoacryl을 게이트 절연층으로 사용한 유기 박막트랜지스터의 전기적 특성에 관한 연구)

  • 김윤명;표상우;김준호;신재훈;김영관;김정수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.2
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    • pp.110-118
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    • 2002
  • Organic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active eletronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039∼0.17 ㎠/Vs, on-off current ratio is 10$\^$6/, and threshold voltage is -7V. And here we report the study of driving emitting, Ir(ppy)$_3$, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ooy)$_3$ doped in BCP/BCP/Alq$_3$/Li:Al/Al and OTFT with a structure of inverted-stagged Al(gate electrode)/photoacry(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITP patterned glass substrate. The electrical characteristics are turn-on voltage of -10V, and maximum luminance of about 90 cd/㎡. Device characteristics were quite different with that of only OELD.

Study on the Characteristics of Organic TFT Using Pentacene as a Active Layer (Pentacene을 활성층으로 이용한 유기 TFT의 특성 연구)

  • Kim, Young-Kwan;Sohn, Byoung-Chung;Kim, Yun-Myoung;Pyo, Sang-Woo
    • Journal of the Korean Applied Science and Technology
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    • v.18 no.3
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    • pp.191-196
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    • 2001
  • Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. For the gate dielectric layer, photoacryl (OPTMER PC403 from JSR Co.) was spin-coated and cured at $220^{\circ}C$. Electrical characteristics of the device were investigated, where the channel length and width was 50 ${\mu}m$ and 5 mm. It was found that field effect mobility was 0.039 $cm^{2}V^{-1}s^{-1}$, threshold voltage was -8 V, and on/off current ratio was $10^{6}$. Further details will be discussed.

An Organic Electrophosphorescent Device Driven by All-Organic Thin-Film Transistor using Polymeric Gate Insulator

  • Pyo, S.W.;Shim, J.H.;Kim, Y.K.
    • Journal of Information Display
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    • v.4 no.2
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    • pp.1-6
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    • 2003
  • In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.