• Proceedings of the Korean Society of Laser Processing Conference
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• 2005.11a
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• pp.37-41
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• 2005

When screen size of the Flat Panel Display (FPD) becomes larger, the traditional photo-lithography using photomasks and UV lamps might not be possible to make patterns on Photo Resist (PR) material due to limitation of the mask size. Though the maskless photo-lithography using UV lasers and scanners had been developed to implement large screen display, it was very slow to apply the process for mass-production systems. The laser exposure system using 405 nm semi-conductor lasers and Digital Micromirror Devices (DMD) has been developed to overcome above-mentioned problems and make more than 100 inches FPD devices. It makes very fine patterns for full HD display and exposes them very fast. The optical engines which contain DMD, Micro Lens Array (MLA) and projection lenses are designed for 10 to 50 ${\mu}m$ bitmap pattern resolutions. The test patterns for LCD and PDP displays are exposed on PR and Dry Film Resists (DFR) which are coated or laminated on some specific substrates and developed. The fabricated edges of the sample patterns are well-defined and the results are satisfied with tight manufacturing requirements.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.398-400
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• 1998

In this paper, the etching studies for n-GaN were carried out using the wet chemical, the photo-enhanced-chemical, and the electro-chemical etching methods. The experimental results show that n-GaN is etched in diluted NaOH solution at room temperture and the etched thickness of NaOH and electron concentrations. Te etching rate of n-GaN samples with n.simeq.1*10$^{19}$ cm$^{-3}$ were used to compare the photo-enhanced-chemical etching with the electrochemical etching methods. The removed thickness was 680.angs./25min by the electrochemical etching methods. The removed thickness was 680 .angs./25min by the electrochemical etching method ad 784.angs./25min by the photoenhanced-chemical etching method. The patterns are 100.mu.m*100.mu.m rectangulars covered with SiO$_{2}$film. It is shown that the profile of etched side-wall of the pattern is vertical without dependance of the n-GaN orientations.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.989-992
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• 2008

X-ray lithography is one of the most powerful processes in the fabrication of nano/micro structures with a high aspect ratio. This process enables the fabrication of ultra-thin barrier ribs for PDP using X-ray sensitive paste. In this paper, organic material including photo-monomers, photo-oligomers, binder polymer and additives as well as inorganic powders with different size were optimized to fabricate high aspect ratio barrier rib pattern for PDP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.362-362
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• 2010

최근 반도체 산업은 지속적인 design rule 감소로 인해 미세 pattern 공정이 요구되고 있으며, 그 중 photo lithography 공정의 scanner overlay margin 확보가 시급하게 되었다. 본 연구는 scanner 장비의 overlay 능력 개선 item 발굴에 관한 연구로서 6개월간 해당 장비에 대해 overlay monitor를 평가하여 scanner의 기계적 요소가 주는 overlay 영향 기인성 최악의 다섯 가지 budget item을 도출하였다. 본 연구를 통해 도출 된 최악의 다섯 가지 budget item(chuck 간 생김 정도 오차, chuck 간편차, chuck 간 mirror 생길 정도 오차, stage 정확성, 마스크 정렬) 성분들을 monitoring 함으로써 overlay 향상에 크게 기여할 것으로 예상한다.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1532-1536
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• 2007

A plastic substrate with tiny rectangular pillars less than 100nm is injection molded to study pattern replication in injection molding. The size of the substrate is 50mm ${\times}$ 50mm and 1mm thick. The substrate has 9 patterned areas of which size is 2mm ${\times}$ 2mm respectively. The lengths of the pillars are 50nm, 100nm, 150nm and 200nm and the width and height are 50nm and about 100nm respectively. A pattern master is fabricated by e-beam writing using positive PR(photo resist) and then a nickel stamper replicated from the PR master by nickel electro-plating. Cr is deposited on the PR pattern master before nickel electro-plating as a conducting layer. Using this nickel stamper, several injection molding experiments are done to investigate effects of the injection molding parameters such as mold temperature, injection rate, packing pressure or pattern location on the replication of the patterns under 100nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1097-1102
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• 2003

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode, Considering these results, we fabricated p-i-n diodes on the high resistive(4㏀$.$cm) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of pin diode can be decreased by the application of finger pattern has parallel resistance structure from 571Ω to 393Ω.

• Textile Coloration and Finishing
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• v.25 no.2
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• pp.126-133
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• 2013

Although para-aramid fibers poss higher mechanical properties, they show very low resistance to sunlight exposure. This paper studied on the effect of nano-sol coated $TiO_2$ to improve the photo-stability of p-aramid fibers. Titanium dioxides were prepared by sol-gel method from titanium iso-propoxide at different R ratio ($H_2O$/titanium iso-propoxide). All samples were characterized by XRD, TEM and UV-vis spectrometer. The mechanical properties of p-aramid fabrics by $TiO_2$ nano-sol coating before and after sunlight irradiation were measured with tensile tester. XRD pattern of titanium dioxide particles was observed by mixing phase together with rutile and anatase type. The results showed, after sunlight irradiation, the decreased mechanical properties of the fiber. Furthermore, the sunlight irradiation obviously deteriorated the surface and defected areas of the fiber severely by photo-induced chain scission and end group oxidation in air.

• Journal of Forest and Environmental Science
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• v.28 no.1
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• pp.56-62
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• 2012

There is little information about appropriate greenspace structures to satisfy aesthetic function in Korea. The purpose of this study was to analyze Korean's aesthetic preferences for greenspace structures concerned with urban tree plantings of an areal type to explore desirable greenspace landscapes. The study considered 5 structural variables of greenspace which were species composition, tree density, tree size, vertical and horizontal structure, and tree layout pattern. A photo-questionnaire was prepared through color simulations of different landscape types for each structural variable. Preference responses of an interval-scale rating from 214 respondents were statistically analyzed between landscape types and between respondent groups. Respondents preferred greenspace landscapes with diverse tree species to single species, higher tree density to lower density, larger trees to many smaller trees, multilayered and grouped plantings to single-layered and sparse plantings, and informal pattern to formal pattern. These preferences tended to be relatively higher for educated specialist and student groups than for other generalist group. Thus, multilayered and dense plantings in natural pattern including larger trees of diverse species, which are similar to ecological plantings, are recommended to increase aesthetic function of greenspace.

• Journal of the Korean Society of Clothing and Textiles
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• v.21 no.8
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• pp.1365-1375
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• 1997

Jacket is the basic formal dress for working women, and one of the most frequently worn by them. It has, however, some problems caused by movement, depending on how well it fits. To improve fitness of jacket, this study compared and evaluated the state of fitness objectively by employing a numerical system in relation with clothing and body. We made three experimental jackets based on the previous jacket patterns and used Moire Photo-graphy to measure the amounts of space between clothes and body from the overlap cross section map. The results obtained from this study were summarized as follows; 1. According to the measurement result of the pattern by using the One-dimension measurement, the amount of ease in girth item for pattern B was larger than the other two patterns. The amounts of space of each part showed the difference of the positions of princess lines, and the different sizes of the darts. 2. From the result of Moire Photography, the wearing shapes of the experimental jackets were influenced by the characteristics of somatotype. In addition, we could analyze the differences of the patterns with Moire Photography. 3. The amounts of space for waist part was larger than those for other parts. Pattern B scored the largest amount of space for all parts compared with pattern A and C. 4. For only waist part, there existed a significant difference in the average amount of space for the three patterns.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.42-44
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• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.