• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.510-514
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• 2005

We have investigated the excitation-light source dependence of photo-catalytic efficiency for the benzene removal. The photo-catalytic module for the benzene removal is fabricated by a combination of GaN-based ultraviolet light-emitting diode (UV GaN-LED) and $TiO_2$ thin film coated on an aluminum plate. The benzene reduction rates of 365 nm and 375 nm modules at 60 mA junction current are approximately $8.95\;\%/Hr$ and $9.2\;\%/Hr$, respectively, which indicates that 365 nm GaN-LED is more effective than 375 nm GaN-LED. The benzene reduction efficiency is also noticeably dependent on the excitation wavelength and excitation-light power, as well as it is increased with the shorter wavelength and higher excitation power. This result exhibits that UV GaN-LED is useful to remove the volatile organic compounds (VOCs) existing in the environment.

• 대한전자공학회논문지
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• 제26권8호
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• pp.1197-1202
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• 1989

In this study, physical properties of silicon dioxide film deposited on GaAs by photo excitation are evaluated using ellisometry, ESCA and AES. Under the pressure of 2-8 torr, silicon dioxide film is deposited on GaAs by photo excitation at 200\ulcorner using gas mixtures of SiH4 and N2O. The measured results show refractive index varies from 1.37 to 1.42 and stoichiometry from 1.97 to 2.09 with process pressure. The observed characteristics of deposition rate are divided into three different regions with process pressure and possible deposition mechanism are also discussed, qualitatively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.196.1-196.1
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• 2014

VO2 exhibits metal-insulator transition (MIT), of which critical temperature (TC) is about 340 K. There have been many reports that MIT can be induced by UV light as well as heat. Clear mechanism regarding such photo-induced MIT has not been clarified. We have compared the MIT behaviors of VO2 thin film during heating-cooling cycles with and without light. We tried several light sources with different wavelengths (red, blue, and UV). Tc and hysteresis width of the resistance change were influenced by the illumination of the samples. We performed Kelvin probe force microscopy (KPFM) studies, which can reveal the evolution of the local sample work function. In this presentation, we will discuss possible physical origins for the photo-induced effects on the MIT behaviors of the VO2 samples.

• 한국초전도ㆍ저온공학회논문지
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• 제17권4호
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• pp.8-11
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• 2015

We studied on the visible emission of Cu-ion-doped perovskite hafnate $SrHfO_3$ (SHO:Cu) with the photo-excitation energy dependence. The polycrystalline SHO:Cu samples were newly synthesized in the solid state reaction method. From the X-ray diffraction measurement it was found that the crystalline structure of SHO:Cu is nearly identical to that of undoped $SrHfO_3$. Interestingly, the photoluminescence excitation (PLE) spectra change significantly with the emission energy, which is linked to the strong dependence of the visible emission on the photo-excitation energy. This unusual emission behavior is likely to be associated with the mixed valence states of the doped Cu ions, which were revealed by X-ray photoelectron spectroscopy. We compared our finding of tunable visible emission in the SHO:Cu compounds with the cases of similar materials, $SrTiO_3$ and $SrZrO_3$ with Cu-ion-doping.

• 한국가시화정보학회지
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• 제12권3호
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• pp.9-14
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• 2014

Two-photon microscopy (TPM) has been used in plant research as a high-resolution high-depth 3D imaging modality. However, TPM is known to induce photo-damage to the plant in case of long time exposure, and optimal excitation wavelength for plant imaging has not been investigated. Longer excitation wavelength may be appropriate for in vivo two-photon imaging of Arabidopsis thaliana leaves, and effects of longer excitation wavelength were investigated in terms of imaging depth, emission spectrum. Changes of emission spectrum as a function of exposure time at longer excitation wavelength were measured for in vivo longitudinal imaging. Imaging depth was not changed much probably because photon scattering at the cell wall was a limiting factor. Chloroplast emission spectrum showed its intensity peak shift by 20 nm with transition of excitation wavelength from 849 nm or below to 850 nm or higher. Emission spectrum showed different change patterns with excitation wavelengths in longitudinal imaging. Longer excitation wavelengths appeared to interact with chloroplasts differently in comparison with 780 nm excitation wavelength, and may be good for in vivo imaging.

• Bulletin of the Korean Chemical Society
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• 제28권12호
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• pp.2195-2199
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• 2007

We demonstrate that high-resolution (~60 nm) near-field fluorescence images of fluorescent nanospheres can be obtained by utilizing the tip-induced fluorescence quenching process. A time-stamped photon counting (TSPC) technique employed enables us to efficiently measure the degree of fluorescence quenching caused by the dielectric or metallic atomic force microscopy tip. We find that the degree of quenching is not only determined by the tip-material but also by the local morphology of the tip. The fringe patterns around individual nanospheres observed are explained in terms of the interference between the excitation field that is directly induced by the laser source, and the scattered excitation field from the tip.

• 한국표면공학회지
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• 제23권4호
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• pp.197-207
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• 1990

Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 13th KACG Technical Meeting `97 Industrial Crystallization Symposium(ICS)-Doosan Resort, Chunchon, October 30-31, 1997
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• pp.155-159
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• 1997

We investigated the effect of mechanical backside damage in Czochralski silicon wafer. The intensity of mechanical damage were evaluated by minority carrier recombination lifetime by a laser excitation/microwave reflection photoconductance decay method, photo-acoustic displacement method, X-ray section topography, and wet oxidation/preferential etch methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the photoacoustic displacement values are also increased proportionally.

• 대한전자공학회논문지
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• 제26권7호
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• pp.73-82
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• 1989

실리콘계 절연박막 형성을 위한 저온공정을 개발하기 위하여 photo-CVD장치를 제작하여 $SiO_2$ 박막을 $50{\sim}250^{\circ}C$ 범위에서 증착시켰다. 이때 $SiH_4/N_2O$ 혼합가스는 수은증감반응법을 사용하지 않고 저압수은램프의 직접 광여기에 의해 분해시켰다. AES와 ESCA 분석결과 Si와 O의 화학량론적 구성이 거의 모든 공정조건에서 1:2로 나타났고, Si와 O원자의 결합상태가 $SiO_2$의 형태로 이루어져 있음을 보여주었다. 그리고 박막의 굴절율은 $1.39{\sim}1.44$의 범위로 나타나, 저온증착에 의해 밀도가 비교적 낮은 박막이 형성됨을 보였다.

• 한국재료학회지
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• 제23권1호
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• pp.31-34
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• 2013

Trivalent cerium-ion-doped $Y_3(Al,\;Ga)_5O_{12}$ nanoparticle phosphor nanoparticles were synthesized using the reverse micelle process. The Ce doped $Y_3(Al,\;Ga)_5O_{12}$ particles were obtained from nitrate solutions dispersed in the nanosized aqueous domains of a micro emulsion consisting of cyclohexane as the oil phase and poly(oxyethylene) nonylphenyl ether (Igepal CO-520) as the non-ionic surfactant. The crystallinity, morphology, and thermal properties of the synthesized $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ powders were characterized by thermogravimetry-differential thermal analysis (TGA-DTA), X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), and transmission electron microscopy. The crystallinity, morphology, and chemical states of the ions were characterized; the photo-physical properties were studied by taking absorption, excitation, and emission spectra for various concentrations of cerium. The photo physical properties of the synthesized $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ powders were studied by taking the excitation and emission spectra for various concentrations of cerium. The average particle size of the synthesized YAG powders was below $1{\mu}m$. Excitation spectra of the $Y_3Al_5O_{12}$ and $Y_3Al_{3.97}Ga_{1.03}O_{12}$ samples were 485 nm and 475 nm, respectively. The emission spectra of the $Y_3Al_5O_{12}$ and $Y_3Al_{3.97}Ga_{1.03}O_{12}$ were around 560 nm and 545 nm, respectively. $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ is a red-emitting phosphor; it has a high efficiency for operation under near UV excitation, and may be a promising candidate for photonic applications.