• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.163-164
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and corning glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S in $600{\AA}$, $10{\sim}5{\AA}/s$. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.130-131
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and coming glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S 600 $\AA$, 10~5 $\AA$/s. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• Applied Chemistry for Engineering
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• v.24 no.6
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• pp.593-598
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• 2013

In this study, we have evaluated the water absorption phenomenon of photoresist dry film, which is commonly used to build circuits on PCB (Printed Circuit Board) by photolithography, by using ATR-FTIR (Attenuated Total Reflectance-Fourier Transform Infrared). We have firstly observed significant change in fracture mode of dry film with respect to temperature and humidity, which we assumed the material transition from ductile to brittle. Secondly, we have established the process of absorption test for determining the diffusion coefficients of water into the dry film both with gravimeter and ATR-FTIR. We have successfully calculated the diffusion coefficients for each environmental conditions from the results which we achieved by gravimeter and ATR-FTIR. Compared to the gravimeter which is a conventional method for absorption test, the ATR-FTIR method in this study has been found to be very easy to use and have the same accuracy as gravimeter. Moreover, we are expecting to use the ATR-FTIR as an appropriate method to study the absorption phenomena related to any kinds of solvent and polymer system.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.5B
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• pp.985-991
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• 2000

In this paper, the optimum structure of 2GHz magnetic thin film planar inductor were designed and fabricated to reduce the inductor area and to maximize the inductance L and quality factor Q of the inductor. The optimum design was performed utilizing Co90Fe10 layer multilayered with SiO2 layers to avoid the eddy-current skin effect and considering new lumped element model. New magnetic thin film inductors operating at 2GHz were fabricated on a Si substrate utilizing photo-lithography and lift-off techniques. The frequency characteristics of L, Q, and impedance in more than fifty identical inductors were measured using an RF Impedance Analyzer(HP4291B with HP16193A test fixture). The self-resonant frequencies(SRF) of the inductors were measured by a Vector Network Analyzer(HP8510). The developed inductors have SRF of 1.8 to 2.3GHz, L of 47 to 68nH, and Q of 70 to 80 near 1GHz. Finally, high frequency, high performance, planar micro-inductor(area=30.8 x 30.8il$^2$) with maximized L and Q were fabricated succefully.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.306-313
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• 2015

In this study, the change of optical characteristics was studied according to the micro optical pattern provided by photo lithography followed by thermal reflow process. The shape and luminance variation with micro pattern was evaluated by SEM and spectrometers. Also, we analyzed the luminance characteristics using the 3D-optical simulation (Optis works) program. As a result, we found that the radius of curvature(R) in micro pattern is decreased up to 77%($150^{\circ}C$) compared to the radius of curvature at the condition $100^{\circ}C$, which is caused by efficient reflow of organic material without chemical changes. The highest enhancement of brightness with optimum micro pattern was obtained at the condition of $120^{\circ}C$ reflow process. The brightness gain with optical micro patterns is more than 15% at the condition of R=16.95 um, ${\Theta}=77.14^{\circ}$ compared to original optical source. The results of light simulation with various radius of curvature and side angle of pattern shows the similar result of experiment evaluation of light behavior on optical micro patterns. It is regarded that the more effect on light enhancement was contributed by side angle which is effective factor on light reflection, rather than the curvature of micro-patterns.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.327-333
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• 1999

Controlled Ca impurity implanted inner crack-like pore in the high purity alumina bi-crystal had been created by micro-fabrication technique, which includes ion implantation, photo-lithography, Ar ion milling, and hot press. The morphological change and the growth od crystals formed by heat treatment in Ca doped high purity single crystal alumina, were observed using optical microscopy. The dot was developed and hexagon like crystal appeared on inner surface of crack-like pore after heat treatment. Bar type crystals, probably CaO . $6Al_2O_3$, were observed on the inner surface of 100ppm Ca implanted specimen after 1 hour heat treatment at $1,500^{\circ}C$, but this bar type crystal disappeared after 1 hour heat treatment at $1,600^{\circ}C$. This disappearance means that there should be little increase of Ca solubility limit to alumina and/or changes of diffusion coefficient of Ca in alumina around this temperature.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.813-819
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• 1999

Inner crack-like pores with controlled amount of Ca impurity level in the high purity alumina single crystal sapphire had been created by micro-fabrication technique which includes ion implantation photo-lithography Ar ion milling and hot press technique. The morphological change and the healing of crack-like pore in the Ca doped high purity single crystal alumina during high temperature heat treatment in vacuum were observed using optical microscopy. The hexagonal bridging ligaments were developed and the size of hexagonal bridging ligaments had been increased with temperature and Ca amount and had grown to their corner rounded. It appeared that the hexagonal bridging ligaments would have an equilbrium size with temperature and the amount of Ca addition. Three kinds of crack-like pore healing type were observed. Edge regression and ligament growth were observed from relatively low temperature in the crack-like pore. Edge regression were found in almost all of the crack-like pore but the ligament growth were found only in the several crack-like pores accelerating heating very fast. Flow type healing was observed above $1800^{\circ}C$ and It healed the crack-like pore very slowly.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.8 s.350
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• pp.1-5
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• 2006

At-wavelength inspection system of extreme Ultra-violet lithography was developed and the inspection results were compared with the optical mask inspection system by cross correlation experiments. In at-wavelength EUV mask inspection system, a raster scan of focused euv light is used to illuminate euv light to mask blank and specularly and non-specularly reflected euv light are detected by photo diode and microchannel plate. The cross correlation results between at-wavelength inspection tool and optical inspection tool shows strong correlation. Far-field scattering fringe pattern from programmed phase and opqque defect, which were detected by phosphor plate and CCD camera shows that distinct diffraction fringes were observed with fringe spacing dependent on the defect size.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.887-892
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• 1999

The inner crack-like pore with controlled amount of Ca impurity in the high purity alumina single crystal sapphire had been created by micro-fabrication technique which includes ion implanation photo-lithography Ar ion milling and hot press technique. The crack-like pores in two-hour hot pressed specimen were extremely stable even after heat treating at 1,80$0^{\circ}C$ for 5 hours almost no healing was observed. But the crack-like pores in one-hour hot pressed specimen at 1,30$0^{\circ}C$ were healed by heat treatment and the amount of healing was increased with the heat treatment time and temperature and the amount of Ca addition. The edges of crack-like pore parallel to <1100> direction in (001) basal plane were stable but the edges normal to this direction in (00101) plane <1120> direction were unstable to facetting This means that the surface energy of alumina along the <1100> direction in (0001) basal plane in much lower than <1120> direction.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.434-437
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• 2003

Evaluation or the patterning accuracy of e-beam lithography machines requires a high precision inspection system that is capable of measuring the true xy-locations of fiducial marks generated by the e-beam machine under test. Fiducial marks are fabricated on a single photo mask over the entire working area in the form of equally spaced two-dimensional grids. In performing the evaluation, the principles of self-calibration enable to determine the deviations of fiducial marks from their nominal xy-locations precisely, not being affected by the motion errors of the inspection system itself. It is. however, the fact that only repeatable motion errors can be eliminated, while random motion errors encountered in probing the locations of fiducial marks are not removed. Even worse, a random error occurring from the measurement of a single mark propagates and affects in determining locations of other marks, which phenomenon in fact limits the ultimate calibration accuracy of e-beam machines. In this paper, we describe an uncertainty analysis that has been made to investigate how random errors affect the final result of self-calibration of e-beam machines when one uses an optical inspection system equipped with high-resolution microscope objectives and a precision xy-stages. The guide of uncertainty analysis recommended by the International Organization for Standardization is faithfully followed along with necessary sensitivity analysis. The uncertainty analysis reveals that among the dominant components of the patterning accuracy of e-beam lithography, the rotationally symmetrical component is most significantly affected by random errors, whose propagation becomes more severe in a cascading manner as the number of fiducial marks increases