• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.421-422
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• 2013

Recently, ZnO has received attentionbecause of its applications in optoelectronics and spintronics. In order to investigate deep level defects in ZnO, we used N-doped ZnO with various of the N-doping concentration. which are reference samples (undoped ZnO), 27%, 49%, and 88%-doped ZnO. Photoinduced current transient spectroscopy (PICTS) measurement was carried out to find deep level traps in high resistive ZnO:N. In reference ZnO sample, a deep trap was found to located at 0.31 (as denoted as the CO trap) eV below conduction band edge. And the CN1 and CN2 traps were located at 0.09, at 0.17 eV below conduction band edge, respectively. In the case of both annealed samples at 200 and $300^{\circ}C$, the defect density of the CO trap increases and then decreases with an increase of N-doping concentration. On the other hands, the density of CN traps has little change according to an increase of N-doping concentration in the annealed sample at $300^{\circ}C$. According to the result of PICTS measurement for different N-doping concentration, we suggest that the CO trap could be controled by N-doping and the CN traps be stabilized by thermal annealing at $300^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.424-427
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• 2002

In this papaer, there is a basic research for the development of the Hybrid digital radiation detector with a new system, make up for existing digital radiation detector of direct/indirect method with a weak point. for enhance the efficiency characteristics of signal response from X-ray detector using the a-Se, We make sample with various kinds of layer, through the ratio of As(0.l%,0.3%,0.5%,1%,1.5%,5%,10%). We measure net charge with a leakage current and photo current for electric charateristics. Ratio of As in a-Se consist of 7 stage, It made of using the thermal deposition system, In the made of samples, we made multi layer using the EFIRON optical adhesives from phosphor layer consist of Oxybromide$(BrO_2)$. As a result of X-ray measurement, the best result is ; leakage current(0.30nA/cm2), net charge(610.13pC/cm2/mR) when the condition is voltage(9V/um), 0.3% ratio of As in multi layer(BrO2 + a-Se)

• Current Photovoltaic Research
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• v.2 no.3
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• pp.95-102
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• 2014

Light trapping techniques can change the propagation direction of incident light and keep the light longer in the absorption layers of solar cells to enhance the power conversion efficiency. In thin film silicon (Si) solar cells, the thickness of absorption layer is generally not enough to absorb entire available photons because of short carrier life time, and light induced degradation effect, which can be compensated by the light trapping techniques. These techniques have been adopted as textured transparent conduction oxide (TCO) layers randomly or periodically textured, intermediate reflection layers of tandem and triple junction, and glass substrates etched by various patterning methods. We reviewed the light trapping techniques for thin film Si solar cells and mainly focused on the commercially available techniques applicable to textured TCO on patterned glass substrates. We described the characterization methods representing the light trapping effects, texturing of TCO and showed the results of multi-scale textured TCO on etched glass substrates. These methods can be used tandem and triple thin film Si solar cells to enhance photo-current and power conversion efficiency of long term stability.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.8
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• pp.1340-1346
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• 2016

Utilization of Distributed Generations (DGs) using Renewable Energy Sources (RESs) has been constantly increasing as they provide a lot of environmental, economic merits. In spite of these merits, some problems with respect to voltage profile, protection and its coordination system due to reverse power flow could happen. In order to analyze and solve the problems, accurate modeling of DG systems should be preceded as a fundamental research task. In this paper, we present a PhotoVoltaic (PV) generation system which consists of practical PV cells with series and parallel resistor and an inverter for interconnection with a main distribution system. The inverter is based on controllable current source which is capable of controlling power factors, active and reactive powers within a certain limit related to amount of PV generation. To verify performance of the model, a distribution system based on actual data is modeled by using ElectroMagnetic Transient Program (EMTP) software. Computer simulations according to various conditions are also performed and it is shown from simulation results that the model presented is very effective to study DG-related researches.

• Korean Journal of Materials Research
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• v.27 no.10
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• pp.518-523
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• 2017

In commercial solar cells, the pattern of the front electrode is critical to effectively assemble the photo generated current. The power loss in solar cells caused by the front electrode was categorized as four types. First, losses due to the metallic resistance of the electrode. Second, losses due to the contact resistance of the electrode and emitter. Third, losses due to the emitter resistance when current flows through the emitter. Fourth, losses due to the shading effect of the front metal electrode, which has a high reflectance. In this paper, optimizing the number of finger on a $4{\times}4$ solar cell is demonstrated with known theory. We compared the short circuit current density and fill factor to evaluate the power loss from the front metal contact calculation result. By experiment, the short circuit current density($J_{sc}$), taken in each pattern as 37.61, 37.53, and $37.38mA/cm^2$ decreased as the number of fingers increased. The fill factor(FF), measured in each pattern as 0.7745, 0.7782 and 0.7843 increased as number of fingers increased. The results suggested that the efficiency(Eff) was measured in each pattern as 17.51, 17.81, and 17.84 %. Throughout this study, the short-circuit current densities($J_{sc}$) and fill factor(FF) varied according to the number of fingers in the front metal pattern. The effects on the efficiency of the two factors were also investigated.

• Proceedings of the Korean Society for Emotion and Sensibility Conference
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• 2000.11a
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• pp.98-104
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• 2000

The conventional model did not take momentum conservation into consideration when the electron absorbs and emits the photons. II-ray provides momentum conservations on any directions of the entering photons, and also the electrons have radial momentum conservations and fully elastic bouncing between two atoms, in the new atom model. Conventional atom model must be criticized on the following four points. (1) Natural motions between positive and negative entities are not circular motions but linear going and returning ones, for examples sexual motion, tidal motion, day and night etc. Because the radius of hydrogen atom's electron orbit is the order of 10$^{-11}$ m and the radia of the nucleons in the nucleus are the order of 10$^{-14}$ m and then the converging $\pi$-gamma rays to the nucleus have so great circular momentum, the electron can not have a circular motion. We can say without doubt that any elementary mass particle can have only linear motion, because of the $\pi$-rays'hindrances, nearthenucleus. (2) Potential energy generation was neglected when electron changes its orbit from outer one to inner one. The h v is the kinetic energy of the photo-electron. The total energy difference between orbits comprises kinetic and potential energies. (3) The structure of the space must be taken into consideration because the properties of the electron do not change during the transition from outer orbit to inner one even though it produces photon. (4) Total energy conservation law applies to the energy flow between mind and matter because we daily experiences a interconnection between mind and body. Conventional Concept of Electric Field must be extended in the case of the direct and alternating current. Conventional concept is based on coulomb's force while the electric potential in the direct and alternating current is from Gibb's free energy. And also conventional concept has not any consciousness with human being but the latters has a conscious sensibility. The cell emf is from the kinetic energy of the open $\pi$-rays flow through the conducting wire. The electric potential in alternating current is from that the trans-orbital moving of the induced change of magnetic field in the wire produces flows of open $\pi$-rays, which push the rotating electrons on the orbital and then make the current flow. Human consciousness can induce a resonance with the sensibility of the open $\pi$-rays in the electric measuring equipment. Specially treated acupunctures with Nasucon is for sending an acupunctural effect from one place to another via space by someone's will power.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Publications of The Korean Astronomical Society
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• v.27 no.4
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• pp.261-262
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• 2012

The aim of this research is to reveal the spatial distribution of the star formation activity of nearby galaxies by comparing CO molecular emission lines with the large area observation in far-infrared (FIR) lines. We report the imaging observations of NGC 253 by FIR forbidden lines via FIS-FTS and CO molecular lines from low to high excitation levels with ASTE, which are good tracers of star forming regions or photo-dissociation regions, especially spiral galaxies, in order to derive the information of the physical conditions of the ambient interstellar radiation fields. The combination of spatially resolved FIR and sub-mm data leads to the star formation efficiency within galaxy. The ratio between the FIR luminosity and molecular gas mass, $L_{FIR}/M_{H_2}$, is expected to be proportional to the number of stars formed in the galaxy per unit molecular gas mass and time. Moreover the FIR line ux shows current star formation activity directly. Furthermore these can be systematic and statistical data for star formation history and evolution of spiral galaxies.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.41.2-41.2
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• 2010

최근 태양전지 제조비용 절감을 위해 초박형 실리콘 태양전지 개발이 활발히 이루어지고 있다. 이에 따라 후면전계(Back Surface Field, BSF) 특성에 대한 관심이 높아지는 추세이다. 이에 본 연구에서는 후면의 결정방향 및 표면구조에 따라 형성되는 후면전계(BSF)의 특성에 대해 알아보고자 하였다. 후면이 절삭손상층 식각(Saw damage etching) 후 (100)면이 드러난 실리콘 기판과 텍스쳐링(Texturing) 후 (111)면이 드러난 실리콘 기판에 후면 전극을 스크린 인쇄 후 Ramp up rate을 달리 하여 소성 공정(RTP system)을 통해 후면전계(BSF)를 형성하여 비교하였다. 후면전계(BSF)의 형상과 특성만을 평가하기 위하여 염산을 이용하여 후면 전극층을 제거하였다. 후면 전극 제거 후 주사전자현미경(Scanning Electron Microscopy)과 3차원 미세형상측정기(Non-contacting optical profiler)로 후면전계(BSF)의 형상을 비교하였다. 또한 후면전계(BSF)의 특성을 평가하고자 Quasi-Steady-State Photo Conductance(QSSPC)를 사용하여 포화전류(Saturation current, $J_0$)을 측정하였고, 면저항 측정기(4-point probe)로 면저항을 측정하여 비교하였다. 후면 전계(BSF)는 (100)면과 (111)면에서 모두 Ramp up rate이 빠를수록 향상된 특성을 보였고, (111)면에서 더 큰 차이를 보였다.

• Bulletin of the Korean Chemical Society
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• v.32 no.spc8
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• pp.3031-3038
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• 2011

Ion-coordinating ruthenium complexes [cis-Ru(dcbpy)(L)(NCS)$_2$, where dcbpy is 4,4'-dicarboxylic acid-2,2'-bipyridine and L is 1,4,7,10-tetraoxa-13-azacyclopentadecane, JK-121, or bis(2-(2-methoxy-ethoxy)ethyl) amine, JK-122] have been synthesized and characterized using $^1H$ NMR, Fourier transform IR, UV/vis spectroscopy, and cyclic voltammetry. The effect of $Li^+$ in the electrolyte on the photovoltaic performance was investigated. With the stepwise addition of $Li^+$ to a liquid electrolyte, the device shows significant increase in the photo-current density, but a small decrease in the open circuit voltage. The solar cell with a hole conductor, the addition of $Li^+$ resulted in a 30% improvement in efficiency. The JK-121 sensitized cells in the liquid and solid-state electrolyte give power conversion efficiencies of 6.95% and 2.59%, respectively, under the simulated sunlight.