• Title/Summary/Keyword: photo couplers

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Risk Factors Related to Photo Couplers(P/C) for Signal Transmission by Electronic Devices (전자기기의 신호전송을 위한 Photo Couplers(P/C) 의 위험 요소 발굴)

  • Park, Hyung-Ki;Choi, Chung-Seog
    • Journal of the Korean Society of Safety
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    • v.28 no.2
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    • pp.26-30
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    • 2013
  • The purpose of this study is to find risk factors by analyzing the operation principle of a photo coupler (P/C) used to remove the noise of electronic devices and establish a base for the performance improvement of developed products. It was found from the P/C circuit analysis of normal products that they were equipped with an electrolytic condenser of $0.1{\mu}F$ to smooth system signals. Due to the epoxy resin packing the external part of the P/C, this study experienced a limit to visually examine the damage to it. It could be seen from the analysis of electric characteristics of the P/C that the forward voltage ($V_f$) and reverse current ($I_r$) were 1.3 V and 10 uA, respectively. In addition, it is required that the breakdown voltage (VCE) between the collector (C) and emitter (E) be maintained at less than 35 V. The and of the damaged product #1 were comparatively good. However, the measurement of was 100.0 uA. From this, it is thought that a short circuit occurred to the internal circuit. Moreover, from the fact that the of the damaged product #2 was open circuit and the measurement of was 0.0 uA, it is thought that the collector and emitter was separated or insulation resistance was significantly high. Furthermore, from the fact that the of the damaged product #3 was open circuit and the measurement of was 0.0 uA, it is thought that the space between the collector (C) and emitter (E) failed to meet the design standard or that they were separated. Therefore, it is thought that fabricating the P/C by increasing the reverse current 10 mA to 50 mA will prevent its malfunction.

Analysis of Subwavelength Metal Hole Array Structure for the Enhancement of Quantum Dot Infrared Photodetectors

  • Ha, Jae-Du;Hwang, Jeong-U;Gang, Sang-U;No, Sam-Gyu;Lee, Sang-Jun;Kim, Jong-Su;Krishna, Sanjay;Urbas, Augustine;Ku, Zahyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.334-334
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    • 2013
  • In the past decade, the infrared detectors based on intersubband transition in quantum dots (QDs) have attracted much attention due to lower dark currents and increased lifetimes, which are in turn due a three-dimensional confinement and a reduction of scattering, respectively. In parallel, focal plane array development for infrared imaging has proceeded from the first to third generations (linear arrays, 2D arrays for staring systems, and large format with enhanced capabilities, respectively). For a step further towards the next generation of FPAs, it is envisioned that a two-dimensional metal hole array (2D-MHA) structures will improve the FPA structure by enhancing the coupling to photodetectors via local field engineering, and will enable wavelength filtering. In regard to the improved performance at certain wavelengths, it is worth pointing out the structural difference between previous 2D-MHA integrated front-illuminated single pixel devices and back-illuminated devices. Apart from the pixel linear dimension, it is a distinct difference that there is a metal cladding (composed of a number of metals for ohmic contact and the read-out integrated circuit hybridization) in the FPA between the heavily doped gallium arsenide used as the contact layer and the ROIC; on the contrary, the front-illuminated single pixel device consists of two heavily doped contact layers separated by the QD-absorber on a semi-infinite GaAs substrate. This paper is focused on analyzing the impact of a two dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2DAu-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show the enhanced electric fields (thereby increasing the absorption in the active layer) resulting from a surface plasmon, a guided mode, and Fabry-Perot resonances. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors.

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Traveling-wave Ti:LiNbO3 optical modulator capable of complete switching (완전 스위칭이 가능한 Ti:LiNbO3 진행파 광변조기)

  • 곽재곤;김경암;김영문;정은주;피중호;박권동;김창민
    • Korean Journal of Optics and Photonics
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    • v.14 no.5
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    • pp.545-554
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    • 2003
  • Design of the optical modulator composed of a three-waveguide coupler and CPW traveling-wave electrodes was carried out. Switching phenomena of three-waveguide couplers were analyzed by using the coupled mode theory, and the coupling-lengths of the devices were calculated by means of the FDM. CPW traveling-wave electrodes were analysed by the CMM and SOR simulation technique in order to find the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electrolyte technique. The fabricated modulator chip was end-polished, pig-tailed and packaged in a brass mount with K-connector. The insertion loss and the switching voltage of the optical modulator were about 4㏈ and 19V, respectively. Network analyzer was used to obtain the S parameter and the corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted to be Z$_{c}$= 45 Ω, N$_{eff}$=2.20, and $\alpha$$_{0}$=0.055/cm√GHZ. The measured optical response R($\omega$) was compared with the theoretically estimated one, showing both responses agree well. The measurement results revealed that 3㏈ bandwidth turned out to be about 13 GHz.

Effects of Some Metabolic Inhibitors on Phototactic Movement in Cyanobacterium Synechosystis sp. PCC 6803 PTX (람세균 Synechocystis sp. PCC 6803 PTX의 주광성 운동에 미치는 몇가지 대사 억제제의 효과)

  • 박영총
    • Journal of Plant Biology
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    • v.38 no.1
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    • pp.87-93
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    • 1995
  • For understanding physiological nature of phototaxis in Synechocystis sp. PCC 6803 PTX(S. 6803 PTX), we examined the effects of some metabolic inhibitors and cation ionophore on the phototactic movement. In the presence of DCMU, which blocks the photosynthetic electron transport just after photosystem II acceptor, there was no inhibitory effect on the phototaxis up to $100\;\mu\textrm{M}$. Instead, the respiratory electron chain inhibitor such as sodium azide dramatically impaired the phototaxis in S. 6803 PTX. These observations indicate that the phototaxis is linked not to photo-phosphorylation, but to respiratory phosphorylation. When the cells were treated with un couplers such as CCCP or DNP, which dissipate the electrochemical gradient of proton($\Delta\mu_{H}+$) across the cytoplasmic membrane, these chemicals did not affect phototaxis. In contrast, when cells were treated with DCCD or NBD which deprive cells of A TP but leave $\Delta\mu_{H}+$ intact across the membrane, the phototactic movement was severly reduced. These results imply that ATP production, not proton motive force, is involved in the phototactic movement in this organism as a driving motive force. The application of specific calcium ionophore A23187 strongly impaired positive phototaxis. Calcium fluxes should be engaged in the sensory trans-duction of phototactic orientation. Finally, when ethionine was supplimented to culture media, the photomovement of this organism was inhibited. This implies that methylation/demethylation mechanism controls the process of phototaxis in S. 6803 PTX like chemotaxis in E. coli and Salmonella typhimurium.murium.

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