• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.131-131
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• 2011

이종접합 태양전지 제작을 위해 기판의 buffer layer로 사용되는 기존의 a-Si 박막을 SiON 박막으로 대체하려는 연구가 진행 중이다. 기존의 a-Si 박막은 대면적에서 균일도를 담보하기 어렵고, 열적 안정성에 취약한 문제점이 있다. 이에 반해 SiON 박막은 일종의 화학 반응인 oxidation 방법으로 형성이 되기 때문에 막의 균일도를 담보 할 수 있고, $400^{\circ}C$이상의 온도에서 형성되기 때문에 열적 안정성이 우수한 장점이 있다. 이러한 장점에도 불구하고 기판위에 직접 형성이 되기 때문에 기판과 SiON 계면 사이의 pssivation이 무엇보다 중요하다. 본 연구에서는 비정질 실리콘 이종접합 태양전지에 적용키 위한 SiON 박막을 형성하고, 기판과 SiON 계면에서의 passivation 향상을 위한 계면 결함 감소에 대한 연구를 진행하였다. 실험을 위한 SiON 박막은 공정온도 $450^{\circ}C$, 공정압력 100 mTorr, 증착파워 120 mW/cm2에서 5분간 증착하였으며, 이때 50 sccm의 N2O 가스를 주입하였다. 증착된 박막은 2~4 nm의 두께로 증착이 되었으며, 1.46의 광학적 굴절률을 가지는 것으로 분석되었다. 계면의 결함을 줄이기 위해 PECVD를 이용한 NH3 plasma treatment를 실시하였다. 공정온도 $400^{\circ}C$, 공정압력 150mTorr~450 mTorr, 플라즈마 파워 60mW/cm2에서 30분간 진행하였으며, 50 sccm의 N2O 가스를 주입하였다. 계면의 결함이 줄었는지 확인하기 위해 C-V 측정을 위한 시료를 제작하여 분석을 하였다. 실험 결과 VFB가 NH3 plasma treatment 이후 positive 방향으로 shift 됨을 알 수 있었다. Dit 분석을 통해 공정 압력 450 mTorr에서 $4.66{\times}108$[cm2/eV]로 가장 낮은 계면 결함 밀도를 확인 할 수 있었다. 결과적으로 NH3 plasma 처리를 통해 positive charge를 갖는 N-content가 형성되었음을 예측해 볼 수 있으며, N-content가 증가하면, 조밀한 Si-N 결합을 형성하면서, boron 및 phosphorus diffusion을 막는데 효과적이다. 또한, plasma treatment 과정에서 H-content에 의한 passivation 효과를 기대할 수 있다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.80-90
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• 1994

The ultra shallow junction was formed by 2-step RTP. Phosphorus solid source(P$_{2}O_{5}$) was transfered on wafer surface during RTG(Rapid Thermal Glass Transfer) of which process condition was 80$0^{\circ}C$ and 60sec. The process temperature and time of the RTD(Rapid Thermal Diffusion) were 950~105$0^{\circ}C$ during 5~15sec respectively sheet resistances were measured as 175~320$\Omega$/m and junction depth and dopth and dopant surface concentration were measured as 0.075~0.18$\mu$m and 5${\times}10^{19}cm^{4}$ respectively. Ti-silicide was formed by 2-step RTA after 300$\AA$ Titanium was deposited. The 1st RTA (2nd RTA) was carried out at the temperature of $600^{\circ}C$(700~80$0^{\circ}C$) for 30 seconds (10~60 seconds) under N$_2$ ambient. Sheet resistances after 2nd RTA were measured as 46~63$\Omega$/D. Si/Ti component ratio was evaulated as 1.6~1.9 from Auger depth profile. Ti-Silicided n-p junction diode (pattern size : 400$\times$400$\mu$m) was fabricated under the RTD(the process was carried out at the temperature of 100$0^{\circ}C$ for 10seconds) and 2nd RTA(theprocess was carried out at the temperature of 750$^{\circ}C$ for 60 seconds). Leakage current was measured 1.8${\times}10^{7}A/mm^{2}$ at 5V reverse voltage. Whent the RTD process condition is at the temperature of 100$0^{\circ}C$ for 10seconds and the 2nd RTA process condition is at the temperature of 75$0^{\circ}C$ for 60 seconds leakage current was 29.15${\times}10^{9}A$(at 5V).

• Journal of Surface Science and Engineering
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• v.49 no.1
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• pp.54-61
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• 2016

Screen printing of commercially available Ag paste is the most widely used method for the front side metallization of Si solar cells. However, the metallization using Ag paste is expensive and needs high temperature annealing for reliable contact. Among many metallization schemes, Ni/Cu/Sn plating is one of the most promising methods due to low contact resistance and mass production, resulting in high efficiency and low production cost. Ni layer serves as a barrier which would prevent copper atoms from diffusion into the silicon substrate. However, Ni based schemes by electroless deposition usually have low thermal stability, and require high annealing process due to phosphorus content in the Ni based films. These problems can be resolved by adding W element in Ni-based film. In this study, Ni-W-P alloys were formed by electroless plating and properties of it such as sheet resistance, resistivity, specific contact resistivity, crystallinity, and morphology were investigated before and after annealing process by means of transmission line method (TLM), 4-point probe, X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM).

• Journal of Marine Bioscience and Biotechnology
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• v.10 no.2
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• pp.91-96
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• 2018

There are many eutrophic lakes by point and non-point pollution sources such as in dustrial waste water, domestic raw sewage, and mucks. The eutrophic lakes not only cause algal blooms but also destroy the ecosystem in the lakes due to high nutrient concentrations. The purpose of this study was to improve water quality in eutrophic lakes by cultivating microalgae using photobioreactors (PBRs) with selectively permeable mesh (SPM), supplying nutrients in the lake and inhibiting cell leakage by diffusion and water permeability. Chlorella vulgaris, was cultivated using PBRs with SPM installed in Inkyung Lake located in Inha university, Incheon, Korea. When cultivating C. vulgaris, $8.3g/m^2/day$ of average biomass productivity was obtained at 3 days. Furthermore, concentrations of total nitrogen and phosphorus were reduced by 35.7% and 84.2%, respectively, compared to initial condition and water quality in eutrophic lake was improved to oligotrophic environment. These results suggest that microalgal cultivation using PBRs with SPM in the lake could produce microalgal biomass as well as improve water quality by decreasing nutrient concentrations.

• Ocean and Polar Research
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• v.45 no.3
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• pp.103-111
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• 2023

To evaluate the impact of effluents from land-based fish farms on the coastal ocean of Wando, Korea, we analyzed inorganic nutrients, particulate organic carbon (POC), dissolved organic carbon (DOC), and colored dissolved organic matter (CDOM) in the effluent and influent of land-based fish farms during the summer (July) of 2021. The average concentrations of nutrients (Dissolved inorganic nitrogen, phosphorus, and silicate; DIN, DIP, and DSi, respectively) in the effluents of this study area were 17±3.7 μM, 1.4±0.7 μM, and 14±1.6 μM, respectively. The average concentrations of POC and DOC were 37±22 μM and 81±13 μM, respectively, with POC accounting for about 30% for total organic carbon in effluents. The Reduced Dissolved Inorganic Nitrogen/Total Dissolved Inorganic Nitrogen ratio (0.7), potential short-period index, indicates that the discharge of nutrients excreted by the fish and unconsumed feed into coastal water results in such nutrients being deposited and accumulated in the sediment. Subsequently, this continuous accumulation triggers the release of ammonium ions during organic matter decomposition, and the ammonium-enriched waters that encroach on fish farms as influent seem to be due to the diffusion of high concentrations of ammonium from bottom sediment. Furthermore, we used fluorescence indices to examine the characteristics of organic matter sources, obtaining mean values of 1.54±0.19, 1.06±0.06, and 1.56±0.06 for the humification index, biological index, and fluorescence index, respectively, in the effluent. These results indicate that the organic matters had an autochthonous origin that resulted from microbial decomposition, and such organic matters were rapidly generated and removed by biological activity, likely supplied from the sediment. Our results suggest that the effluent from land-based fish farms could be a potential source of deoxygenation occurrence in coastal areas.

• Journal of Korean Society of Environmental Engineers
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• v.39 no.11
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• pp.613-625
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• 2017

For two agricultural reservoirs that are rented for fishing spots, benthic nutrient fluxes experiment were performed two times with two sediments from fishing-effective zone and one sediment from fishing-ineffective zone using laboratory core incubation in oxic and anoxic conditions. During benthic nutrient fluxes experiment, the changes in DO, EC, pH, and ORP in the supernatant were not significantly different between fishing-effective zone and fishing-ineffective zone, and were similar to the sediment-hypolimnetic diffused boundary layer in agricultural reservoir. Except for $NO_3{^-}-N$, more benthic nutrient fluxes of $NH_4{^+}-N$, T-P, and $PO{_4}^{3-}-P$ from sediment to hypolimnetic was measured in anoxic than in oxic conditions (p<0.05). As the DO concentration in hypolimnetic decreases, the microorganism-mediated ammonification is promoted, the nitrification is suppressed, and finally the $NH_4{^+}-N$ diffuses out from sediment to hypolimnetic. Also, the diffusion of T-P and $PO{_4}^{3-}-P$ from sediments to hypolimnetic is accelerated through the dissociation of the phosphorus bound to both organic matters and metal hydroxides. The difference in the benthic nutrient diffusive fluxes between fishing-effective zone and fishing-ineffective zone was not statistically significant (p>0.05). Therefore, it was found that fishing activities did not increase the benthic nutrient diffusive fluxes to a statistically significant level. Due to the short fishing activities of 10 years and the rate-limited diffusion of the laboratory core incubation, the contribution of fishing activities on sediment pollution is estimated to be low. No significant correlation was found between the total amount of nutrients in sediment and the benthic nutrient diffusive fluxes in both aerobic and anaerobic conditions. Therefore, nutrients input from various nonpoint sources of watersheds are considered to be a more dominant factor rather than fishing activities in water quality deterioration, and both aeration and water circulation in hypolimnetic were required to suppress the anoxic environment in agricultural reservoirs.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.3
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• pp.42-51
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• 1981

Boron was predeposited into p (100) Si wafer at 94$0^{\circ}C$ for 60minutes to make the back surface field. High tempreature diffusion process at 1145$^{\circ}C$ for 3 hours was immediately followed without removing boron glass to obtain high surface concentration Back boron was annealed at 110$0^{\circ}C$ for 40minutes after boron glass was removed. N+ layer was formed by predepositing with POCI3 source at 90$0^{\circ}C$ for 7~15 minutes and annealed at 80$0^{\circ}C$ for 60min1es under dry Of ambient. The triple metal layers were made by evaporating Ti, Pd, Ag in that order onto front and back of diffused wafer to form the front grid and back electrode respectively. Silver was electroplated on front and back to increase the metal thickness form 1~2$\mu$m to 3~4$\mu$m and the metal electrodes are alloyed in N2 /H2 ambient at 55$0^{\circ}C$ and followed by silicon nitride antireflection film deposition process. Under artificial illumination of 100mW/$\textrm{cm}^2$ fabricated N+PP+ cells showed typically the open circuit voltage of 0.59V and short circuit current of 103 mA with fill factor of 0.80 from the whole cell area of 3.36$\textrm{cm}^2$. These numbers can be used to get the actual total area(active area) conversion efficiency of 14.4%(16.2%) which has been improved from the provious N+P cell with 11% total area efficiency by adding P+ back.