• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.218-221
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• 2007

High-efficiency white organic light-emitting diodes(WOLEDs) were fabricated with two emissive layers and an blocking layer was sandwiched between two phosphorescent dopants, bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III(FIrpic) as the blue emission and a newly synthesized red phosphorescent material guest, bis(5-acetyl-2-phenylpyridinato-N,C2') acetylacetonate($(acppy)_2Ir(acac)$). This blocking layer prevented a T-T annihilation in a red emissive layer, and balanced with blue and red emission as blocking of hole carriers. The white device showed Commission Internationale d'Eclairage($CIE_{x,y}$) coordinates of (0.317, 0.425) at 22400 $cd/m^2$, a maximum luminance of 27300 $cd/m^2$ at 268 $mA/cm^2$, a maximum luminous efficiency and power efficiency of 26.9 cd/A and 18.6 lm/W.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.60-61
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• 2007

IAZO (indium aluminium zinc oxide) anode films were co-sputtered on glass substrate using a dual target DC magnetron sputtering system. For preparation of IATO films, at constant DC power of IZO (indium zinc oxide) target of 100 W, the DC power of AZO (Aluminum zinc oxide) target was varied from 0 to 100 W. To analyze electrical and optical properties of IAZO anode, Hall measurement examination and UV/V is spectrometer were performed, respectively. In addition, structure of IAZO anode film was examined by X-ray diffraction (XRD) method. Surface smoothness was investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). From co-sputtered IAZO anode, good conductivity($2.32{\times}10^{-4}{\Omega}.cm$) and high transparency(approximately 80%) in the visible range were obtained even at low temperature deposition. Finally, J-V-L characteristics of phosphorescent OLED with IAZO anode were studied by Keithley 2400 and compared with phosphorescent OLED with conventional ITO anode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1037-1043
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• 2006

We report the enhancement of hole injection using ozone-treated Ag nanodots dispersed on indium tin oxide anode in $Ir(ppy)_3-doped$ phosphorescent OLED. Phosphorescent OLED fabricated on Ag nanodots dispersed ITO anode showed a lower turn on voltage and higher luminescence than those of OLEDS prepared commercial ITO anode. Synchrotron x-ray scattering examination results showed that the Ag nanodots dispersed on ITO anode is amorphous structure due to low deposition temperature. It was thought that decrease of the energy barrier height as Ag nanodots changed to $AgO_x$ nanodots by surface treatment using ozone for 10 min led to enhancement of hole injection in phosphorescent OLED. Futhermore, efficient hole injection can be explained by increase of contact region between anode material and organic material through introduction of $Ag_2O$ nanodots.

• Journal of Information Display
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• v.12 no.3
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• pp.141-144
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• 2011

To improve the performance of blue fluorescent and green phosphorescent organic light-emitting diode devices, Merck developed novel green phosphorescent host and electron-transporting materials. The newly developed electron-transporting material improves the external quantum efficiency of blue fluorescent devices up to 8.7%, with an excellent lifetime. In combination with the newly developed host materials, the efficiency of green phosphorescent devices can be improved by a factor of 1.7, and the lifetime by a factor of 7.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.196-199
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• 2009

We report the multiple quantum well (MQW) structure for highly efficient red phosphorescent OLEDs. Various triplet quantum well devices from a single well to five quantum wells are realized using a wide band-gap hole and electron transporting layers, narrow band-gap host and dopant material, and charge control layers (CCL). The maximum external quantum efficiency of 14.8 % with a two quantum well device structure is obtained, which is the highest value among the red phosphorescent OLEDs using same dopant.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.184-187
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• 2009

In this paper, we study effect of charge balance on performance of blue phosphorescent organic light emitting diodes (OLEDs). Charge balance determines the location of recombination zone in the OLEDs. By tuning the charge balance in iridium (III) bis[(4,6-difluorophenyl)-pyridinate-N,C2']picolinate (FIrpic) based blue phosphorescent organic light-emitting devices (PHOLEDs) with a high mobility and high triplet energy electron transporting material, we were able to achieve a high current efficiency of 60 cd/A which is a 3X improvement over previous devices with 3,5'-N,N'-dicarbazole-benzene (mCP) host.

• Journal of the Korean Applied Science and Technology
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• v.18 no.3
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• pp.186-190
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• 2001

By fabricating the organic light-emitting devices (OLEDs) based on phosphorescent material, the internal quantum efficiency can reach 100%, compared to 25% in the case of the fluorescent material. Thus, the phosphorescent OLEDs have recently been extensively studied and showed higher internal quantum efficiencies then the conventional OLEDs. In this study, we investigated the characteristics of the phosphorescent OLEDs, with the green emitting phosphor, $Ir(ppy)_{3}$, (tris(2-phenylpyridine)iridium). The devices with a structure of $ITO/TPD/Ir(ppy)_{3}$ doped in the host material $/BCP/Alq_{3}/Li:Al/Al$ were fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of $Ir(ppy)_{3}$, we fabricated several devices and investigated the device characteristics. OLEDs doped into BCP by 10% showed the best characteristics. For 10% doped OLEDs, the maximum luminance of was over 10000 $cd/m^{2}$, and the maximum power efficiency was 7.14 lm/W.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.843-845
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• 2009

A polymeric host for triplet emitters composed of N-alkylcarbazole and tetramethylbenzene units was successfully synthesized. Efficient energy transfer was observed between this polymeric host and green phosphorescent dyes. The device fabricated using 5 wt% green 1 in the polymeric host as the emitting layer showed the best performance. Thin films of this host-guest system, exhibiting clear stripe patterns could be prepared through the LITI process. The patterned films were then used to fabricate electrophosphorescent devices, which show performance characteristics similar to those of spin-coated devices. The new host material is a good candidate to be used in polymer-based full-color electrophosphorescent light-emitting displays.

• Korean Journal of Materials Research
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• v.26 no.10
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• pp.561-569
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• 2016

$SrAl_2O_4$: $Eu^{2+}$ and $Dy^{3+}$ phosphorescent phosphors were synthesized using the polymerized complex method. Generally, phosphorescent phosphors synthesized by conventional solid state reaction show a micro-sized particle diameter; thus, this process is restricted to applications such as phosphorescent ink and paint. However, it is possible to synthesize homogeneous multi-component powders with fine particle diameter by wet process such as the polymerized complex method. The characteristics of $SrAl_2O_4$: $Eu^{2+}$ and $Dy^{3+}$ powders prepared by polymerized complex method with one and two step calcination processes were comparatively analyzed. Temperatures of organic material removal and crystallization were observed through TG-DTA analysis. The crystalline phase and crystallite size of the $SrAl_2O_4$: $Eu^{2+}$ and $Dy^{3+}$ phosphorescent phosphors were analyzed by XRD. Microstructures and afterglow characteristics of the $SrAl_2O_4$: $Eu^{2+}$ and $Dy^{3+}$ phosphors were measured by SEM and spectrofluorometry, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.276-277
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• 2006

본 연구에서는 인광 발광 물질인 host재료, CBP에 guest로 인광색소인 $Ir(ppy)_3$을 첨가하여 광학적, 전기적 특성을 보았다. $Ir(ppy)_3$ 색소를 서로 다른 중량비로 첨가할 때의 소자들의 특성을 평가하였다.$ Ir(pppy)_3$을 3.125%의 중량비로 하였을 때 가장 좋은 휘도특성을 보였다. 소자의 기본구조는 glass/ITO/${\alpha}-NPD(300{\AA})$/CBP:$Ir(ppy)_3(300{\AA})$/$BCP(80{\AA})$/$Alq_3(200{\AA})$)/$Al(1000{\AA})$로 하였다.