• Imaging Science in Dentistry
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• v.52 no.1
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• pp.93-101
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• 2022

Purpose: This study compared the effectiveness of complementary metal-oxide semiconductors (CMOS) and photostimulable phosphor (PSP) plates as intraoral imaging systems in terms of time efficacy, patient comfort, and subjective image quality assessment in real clinical settings. Materials and Methods: Fifty-eight patients (25 women and 33 men) were included. Patients were referred for a full-mouth radiological examination including 1 bitewing radiograph (left and right) and 8 periapical radiographs for each side (left maxilla/mandible and right maxilla/mandible). For each patient, 1 side of the dental arch was radiographed using a CMOS detector, whereas the other side was radiographed using a PSP detector, ensuring an equal number of left and right arches imaged by each detector. Clinical application time, comfort/pain, and subjective image quality were assessed for each detector. Continuous variables were summarized as mean±standard deviation. Differences between detectors were evaluated using repeated-measures analysis of variance. P<0.05 was accepted as significant. Results: The mean total time required for all imaging procedures with the CMOS detector was significantly lower than the mean total time required for imaging procedures with PSP (P<0.05). The overall mean patient comfort scores for the CMOS and PSP detectors were 4.57 and 4.48, respectively, without a statistically significant difference (P>0.05). The performance of both observers in subjectively assessing structures was significantly higher when using CMOS images than when using PSP images for all regions (P<0.05). Conclusion: The CMOS detector was found to be superior to the PSP detector in terms of clinical time efficacy and subjective image quality.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.46-50
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• 1999

$\textrm{Zn}_{2-x}\textrm{Mn}_{x}\textrm{SiO}_{4}$ green phosphors have been prepared by the solution reaction method and the photoluminescence and crystalline properties were studied as a function of both the firing temperature ($900^{\circ}C$~$1200^{\circ}C$) and the concentration of Mn activator (x=0.01~0.20). Under 147 nm and 254nm and excitation sources, the emission intensity of the phosphors was increased about 4 times increasing firing temperatures from $900^{\circ}C$ to $1200^{\circ}C$. From the XRD analysis, $\textrm{Zn}_{2}\textrm{SiO}_{4}$:Mn phosphors fired above $1100^{\circ}C$ showed willemite crystal structure. Under 147nm excitation, the maximum emission intensity was obtained at the Mn concentration of x=0.02 for $\textrm{Zn}_{2-x}\textrm{Mn}_{x}\textrm{SiO}_{4}$ phosphors fired at $1200^{\circ}C$ and the concentration quenching was occurred at the Mn concentration above x=0.10. The phosphor particles showed almost spherical shapes with the average size of around 2~3$\mu\textrm{m}$ by the SEM morphology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.393-399
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• 2020

A series of phosphors, SrWO₄:5 mol% Dy³⁺, SrWO₄:5 mol% Sm³⁺, and SrWO₄:5 mol% Dy³⁺:x Sm³⁺ (x＝1~15 mol%), were prepared using a facile co-precipitation. The crystal structure, morphology, photoluminescence properties, and application in anti-counterfeiting fields were investigated. The crystalline structures of the prepared phosphors were found to be tetragonal systems with the dominant peak occurring at the (112) plane. The excitation spectra of the Dy³⁺ singly-doped SrWO₄ phosphors were composed of an intense charge-transfer band centered at 246 nm in the range of 210~270 nm and two weak peaks at 351 nm and 387 nm due to the ⁶H_15/2→⁶P_7/2 and ⁶H_15/2→⁴I_13/2 transitions of Dy³⁺ ions, respectively. The wavelength of 246 nm was optimum for exciting the luminescence of Dy³⁺ and Sm³⁺ co-doped SrWO₄ phosphors. The emission spectra consisted of two intense blue and yellow emission bands at 480 nm and 573 nm corresponding to the ⁴F_9/2→⁶H_15/2 and ⁴F_9/2→⁶H_13/2 transitions of Dy³⁺, and two strong emission peaks at 599 nm and 643 nm originating from the ⁴G_5/2→⁶H_7/2 and ⁴G_5/2→⁶H_9/2 transitions of Sm³⁺, respectively. As the concentration of Sm³⁺ ions increased, the emission intensities of Dy³⁺ rapidly decreased, while the emission intensities of Sm³⁺ gradually increased. These results suggest that the color of the emission light can be tuned from yellow to white by changing the concentration of Sm³⁺ ions at a fixed 5 mol% Dy³⁺. Furthermore, the fluorescent security inks were synthesized for use in anti-counterfeiting applications.

• Journal of the Korean Chemical Society
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• v.43 no.6
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• pp.636-643
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• 1999

Green-emission intensity of a $Zn_{2-x}Mn_xSiO_4$ phosphor, which is a potential candidate as a green component in PDP device, significantly increases provided that the compound is additionally heat treated at 900$^{\circ}C$ after solid state reaction at 1300$^{\circ}C$. In order to verify origin of such an intensity enhancement after the additional heat treatment in association with the electronic and local structural change at around Mn ions, the Mn K-edge X-ray absorption spectra were recorded. From the analyses of the preedge peak corresponding to $1s{\rightarrow}3d$ bound state transition and XANES spectrum, it is known that most Mn ions are in +2 oxidation state and substitute Zn ion site regardless of the thermal treatment. In addition, EXAFS analyses revealed that Mn ions formed $MnO_4$ tetrahedra with the Mn-O bond length shortened by 0.01${\AA}$ and with reduced Debye-Waller factor in the thermally treated sample.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.227-235
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• 2001

In this work, Zn$_2$SiO$_4$:Mn phosphors were prepared by solid state reaction. The effect of sintering/reduction temperature, flow rate of H$_2$-5%/$N_2$-95% mix gas, and ball milling conditions have been investigated on the sake of PDP(Plasma Display Panel) application. The characteristics such as particle morphology and photoluminescence of prepared phosphors were compared to those of commercial Zn$_2$SiO$_4$:Mn Phosphors. It was found that the Phosphor synthesized at 130$0^{\circ}C$ with 0.08 Mn concentration had a maximum brightness, This brightness was increased more 20% by reduction treatment under 100me/min flow rate of 5%H$_2$-95%$N_2$ mixed gas. The size of particles decreased under 3$\mu\textrm{m}$ after ball milling. Especially, higher luminescence was obtained in our Zn$_2$SiO$_4$:Mn phosphors than commercial Zn$_2$SiO$_4$:Mn phosphors, so that they are able to be applied for PDP.

• Journal of the Korean Electrochemical Society
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• v.16 no.3
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• pp.184-189
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• 2013

$Ba_2SiO_4:Eu^{2+}$ ($B_2S:Eu^{2+}$) powders were prepared by firing the dry gel obtained by the sol-gel and the hybrid process (sol-gel and combustion), respectively, and their structure and luminescence were investigated. Tetraethyl orthosilicate (TEOS) was used as a Si source. The phase transition was observed with the TEOS content. With 1.2M TEOS, the powders prepared by the sol-gel process without prior calcination were composed of the $B_2S:Eu^{2+}$ single phase, whereas those by the sol-gel and the hybrid process with prior calcination consisted of the dominant $B_2S:Eu^{2+}$ and minor $BaSiO_3:Eu^{2+}$ ($BS:Eu^{2+}$) phases and their emission intensities were approximately two times higher than those without prior calcination. The hybrid process could reduce the process time innovatively compared to the sol-gel process, even though the former was a little inferior to the latter in the emission intensity of $B_2S:Eu^{2+}$. With 1.1M TEOS, the $B_2S:Eu^{2+}$ single phase was obtained by the hybrid process, and its green emission was observed at 505 nm originated from the $4f^65d^1{\rightarrow}4f^7$ transition of $Eu^{2+}$ ions.

• Electrical & Electronic Materials
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• v.12 no.7
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• pp.7-11
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• 1999

Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).

• Journal of the Korean Chemical Society
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• v.45 no.5
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• pp.461-469
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• 2001

The combinatorial approach has been applied to discover and optimize the composition of the novel or enhanced materials. In this study, we screened the optimum composition of the system SrO-Gd$_2$O$_3$-Al$_2$O$_3$ doped with $Tb^{3+}$ by a polymerized-complex combinatorial chemistry method. Mixtures with compositions of Sr, Gd and Al component that is in the range from 0 to 1 in about 0.05 increments could be tested. The sample powders were synthesized by a polymerized complex method. To prepare appropriately polymeric precursors, we used the metallic nitrates, citric acid and ethylene glycol. The luminescence properties of the synthesized powders are investigated using the UV and VUV (Vacuum-UV: 147 nm) photoluminescence spectrometer. In addition, the crystallinity and morphology of powder were monitored by X-ray diffraction spectrometer and scanning electron microscopy. In result of VUV PL works, there are good luminescent samples with the composition of 0.595 < x < 0.733 and 0.016 < y < 0.017 in Gd1-x-yAlxTbyO$\delta$ and 0.049 < x < 0.064 and 0.02 < y < 0.039 in $Sr_xAl_{1-x-y}Tb_yO_$\delta$$, their materials can be applicable to plasma display panels as the green phosphor.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.12 no.3
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• pp.217-233
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• 2014

Securing the radiological safety is a prerequisite for the safe management of the naturally occurring radioactive materials (NORM) which cannot be reused. This becomes a crucial focus of our R&D efforts upon the implementation of the Act on Protective Action Guidelines against Radiation in the Natural Environment. To secure the safety, the establishment of technical bases and procedures for securing radiological safety related to the disposal of NORM is required. Thus, it is necessary to analyze the characteristics, to collect the data, to have the radiological safety assessment methodologies and tools, to investigate disposal methods and facilities, and to study the effects of the input data on the safety for the NORM wastes. Here, we assess the environmental impact of the NORM waste disposal with respect to the major domestic and foreign NORM characteristics. The data associated with major industries are collected/analyzed and the status of disposal facilities and methodologies relevant to the NORM wastes is investigated. We also suggest the conceptual design concept of a landfill disposal facility and the management plan with respect to the major NORM wastes characteristics. The radionuclide pathways are identified for the atmospheric transport and leachate release and the environmental impact assessment methodology for the NORM waste disposal is established using a relevant code. The assessment and analysis on the exposure doses and excessive cancer risks for the NORM waste disposal are performed using the characteristics of the representative domestic NORM wastes including flying ash, phosphor gypsum, and redmud. The results show that the exposure dose and the excessive cancer risks are very low to consider any radiation effects. This study will contribute to development in the areas of the regulatory technology for securing radiological safety relevant to NORM waste disposal and to the implementation technology for the Act.