• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.276-279
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• 2003

The phase change upon reflection from target surfaces in white-light interferometer induces measurement errors when target surfaces are composed of dissimilar materials. We prove that this phase change on reflection considered of the polarization of the white-light causes the shift of both envelope peak position and fringe peak position of several tens of nanometer. In addition, we propose a new equation of white-light interference fringe pertinent to the polarization of source.

• 한국광학회지
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• 제11권5호
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• pp.317-322
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• 2000

본 논문에서는 두 파장 백색광 간섭법을 이용하여 금속물질을 단차 측정 시 발생하는 오차를 최소화하는 새로운 자가 보정법을 제안한다. 금속 물질의 파장에 대한 위상 변화율은 백색광 간섭무늬의 가시도 정점에 오차로 작용하는데, 자가 보정법은 위상 변화율을 일차 직선으로 가정하고 이를 추출하여 단차 값에 보상한다. 본 자가 보정법은 두 파장 백색광 간섭무늬가 갖는 두 개의 위상 정점과 한 개의 가시도 정점으로부터 위상 변화율 오차를 추출하므로, 별도의 실험이 필요하지 않다. 실험을 통하여 두 개의 금속 물질로 이루어진 단차를 $\pm2nm$ 이내의 오차로 측정함을 보인다.

• Macromolecular Research
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• 제11권6호
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• pp.495-500
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• 2003

UV-induced graft polymerization of glycidyl methacrylate (GMA) to a polypropylene (PP) membrane was carried out in the vapor phase with benzophenone (BP) as a photoinitiator. Attenuated total reflection Fourier transform infrared spectroscopy, atomic force microscopy (AFM), and scanning electron microscopy (SEM) were utilized to characterize the copolymer. The degree of grafting increased with increasing reaction time, increased UV irradiation source intensity, and increased immersion concentration of the BP solution. The optimum synthetic condition for the PP-g-GMA membrane was obtained with a reaction time of 2 hrs, a UV irradiation source intensity of 450 W, and an immersion concentration of the BP solution of 0.5 mol/L. The pure water flux decreased upon increasing the degree of grafting and increasing the amount of diethylamino functional group introduced. The analysis of AFM and SEM images shows that the graft chains and diethylamino groups of PP-g-GMA grew on the PP membrane surface, resulting in a change in surface morphology.

• 반도체디스플레이기술학회지
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• 제2권2호
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• pp.1-4
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• 2003

We have developed a rotating compensator spectroscopic ellipsometer (RCSE). As the ellipsometry measures a change in the polarization state of a light wave upon non-normal reflection from surface, the degree of sensitivity is enhanced greatly through the detection of relative phase change. RCSE acquires additional information from the non-ideal surface of sample and operates over the photon energy range from 1.5 to 4.5 eV. We applied RCSE to measure the optical properties of films and the line-width of patterned PR films on crystalline silicon.

• 한국광학회지
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• 제8권6호
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• pp.445-449
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• 1997

비정질상과 결정상으로 가역변화하는 특성을 이용하여, 기존의 읽기전용 기록매체인 Compact Disk(CD)를 대체할 차세대 광기록매체로 주목받고 있는 Ge$_{2}$Sb$_{2}$Te$_{5}$(GST)의 상태변화에 따른 굴절율과 소광계수, 박막의 두께와 밀도 등 박막상수들을 구하였다. DC 스퍼터링방법으로 제작한 두꺼운 GST의 복소굴절율을 양자역학적 분산식을 이용한 모델링방법으로 구하고, 한편으로는 표면미시거칠기를 AFM(Atomic Force Microscopy)으로 결정한 다음, 타원해석 스펙트럼들을 수치해석적 역방계산하여 구한 복소굴절율과 비교하였다. 결정상과 비정질상일 때의 GST의 복소굴절율을 각각 구하고 이로부터 계산된 반사율을 측정된 반사율과 비교함으로써 수치해석적인 방법이 실제 GST의 복소굴절율과 더 일치하는 값ㅇㄹ 가지게 됨을 확인하였다. 이렇게 구한 GST의 복소굴절율을 기준데이터로 사용하여 실제 설계두께를 가지는 GST박막의 두께 및 표면거칠기층을 정량적으로 구하였다.다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.