• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.276-279
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• 2003

The phase change upon reflection from target surfaces in white-light interferometer induces measurement errors when target surfaces are composed of dissimilar materials. We prove that this phase change on reflection considered of the polarization of the white-light causes the shift of both envelope peak position and fringe peak position of several tens of nanometer. In addition, we propose a new equation of white-light interference fringe pertinent to the polarization of source.

• Korean Journal of Optics and Photonics
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• v.11 no.5
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• pp.317-322
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• 2000

We present a compensation method of the phase change upon reflection in the scannll1g whIte light interferometry. which pracl1cally allows precIse 3-D profIle mappmg for compo~Ite target surfaces comprising of multipledissinular matenals. The compensation method estimates the vanatlon 01 pbase change with the spectral distribution of the light source through first-order approximation, and then diIectly compensates the measurement errors by perIormmg two-wavelength white light intetferomctric measurements. Experimental results prove that the proposed self-compensatIOn mcthod is capable of reducing the measmement error in step height gauging within $\pm2nm$..

• Macromolecular Research
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• v.11 no.6
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• pp.495-500
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• 2003

UV-induced graft polymerization of glycidyl methacrylate (GMA) to a polypropylene (PP) membrane was carried out in the vapor phase with benzophenone (BP) as a photoinitiator. Attenuated total reflection Fourier transform infrared spectroscopy, atomic force microscopy (AFM), and scanning electron microscopy (SEM) were utilized to characterize the copolymer. The degree of grafting increased with increasing reaction time, increased UV irradiation source intensity, and increased immersion concentration of the BP solution. The optimum synthetic condition for the PP-g-GMA membrane was obtained with a reaction time of 2 hrs, a UV irradiation source intensity of 450 W, and an immersion concentration of the BP solution of 0.5 mol/L. The pure water flux decreased upon increasing the degree of grafting and increasing the amount of diethylamino functional group introduced. The analysis of AFM and SEM images shows that the graft chains and diethylamino groups of PP-g-GMA grew on the PP membrane surface, resulting in a change in surface morphology.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.1-4
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• 2003

We have developed a rotating compensator spectroscopic ellipsometer (RCSE). As the ellipsometry measures a change in the polarization state of a light wave upon non-normal reflection from surface, the degree of sensitivity is enhanced greatly through the detection of relative phase change. RCSE acquires additional information from the non-ideal surface of sample and operates over the photon energy range from 1.5 to 4.5 eV. We applied RCSE to measure the optical properties of films and the line-width of patterned PR films on crystalline silicon.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.445-449
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• 1997

The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.