• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.261-266
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• 2010

In this paper, we report the changes of electrical, structural and optical characteristics in $Ge_2Sb_2Te_5$ thin films according to an increase of Si content. The Si-doped $Ge_2Sb_2Te_5$ thin films were prepared by rf-magnetron co-sputtering method. Isothermal annealing was carried out at $N_2$ atmosphere. The crystallization speed (v) of amorphous thin films was evaluated by detecting the reflection response signals using a nano-pulse scanner (wavelength = 658 nm) with illumination power of 1~17 mW and pulse duration of 10~460 ns. Structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of 300~3000 nm using UV-vis-NIR spectrophotometer. The sheet resistance (RS) of the thin films was measured using 4 point probe. Conclusivlely, the v-value decreased with an increase of Si content, while the RS-values of both crystalline and amorphous phases were increased. In particular, fcc-to-hexagonal transition was suppressed by the added Si atoms.

• Korean Journal of Optics and Photonics
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• v.30 no.6
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• pp.249-254
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• 2019

An optical current sensor device that measures electric current by the principle of the Faraday effect was designed and fabricated. The polarization-rotated reflection interferometer and the quadrature phase interferometer were introduced so as to improve the operational stability. Complex structures containing diverse optical components were integrated in a polymeric optical integrated circuit and manufactured in a small size. This structure allows sensing operation without extra bias feedback control, and reduces the phase change due to environmental temperature changes and vibration. However, the Verdet constant, which determines the Faraday effect, still exhibits an inherent temperature dependence. In this work, we tried to eliminate the residual temperature dependence of the optical current sensor based on polarization-rotated reflection interferometry. By varying the length of the fiber-optic wave plate, which is one of the optical components of the interferometer, we could compensate for the temperature dependence of the Verdet constant. The proposed optical current sensor exhibited measurement errors maintained within 0.2% over a temperature range, from 25℃ to 85℃.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.445-449
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• 1997

The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.

• Journal of Ocean Engineering and Technology
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• v.30 no.6
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• pp.505-519
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• 2016

If the seabed is exposed to high waves for a long period, the pore water pressure may be excessive, making the seabed subject to liquefaction. As the water pressure change due to wave action is transmitted to the pore water pressure of the seabed, a phase difference will occur because of the fluid resistance from water permeability. Thus, the effective stress of the seabed will be decreased. If a composite breakwater or other structure with large wave reflection is installed over the seabed, a partial standing wave field is formed, and thus larger wave loading is directly transmitted to the seabed, which considerably influences its stability. To analyze the 3-D dynamic response characteristics of the seabed around a composite breakwater, this study performed a numerical simulation by applying LES-WASS-3D to directly analyze the wave-structure-soil interaction. First, the waveform around the composite breakwater and the pore water pressure in the seabed and rubble mound were compared and verified using the results of existing experiments. In addition, the characteristics of the wave field were analyzed around the composite breakwater, where there was an opening under different incident wave conditions. To analyze the effect of the changed wave field on the 3-D dynamic response of the seabed, the correlation between the wave height distribution and pore water pressure distribution of the seabed was investigated. Finally, the numerical results for the perpendicular phase difference of the pore water pressure were aggregated to understand the characteristics of the 3-D dynamic response of the seabed around the composite breakwater in relation to the water-structure-soil interaction.

• The korean journal of orthodontics
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• v.29 no.2 s.73
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• pp.165-181
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• 1999

Treatment mechanics should be individualized to be suitable for each patient's personal teeth and anatomic environment to get a best treatment result with the least harmful effects to teeth and surrounding tissues. Especially, the change of biomechanical reaction associated with that of the centers of resistance of teeth should be considered when crown-to-root ratio changed due to problematic root resorption and/or periodontal disease during adult orthodontic treatment. At the present study, in order to investigate patterns of initial displacements of anterior teeth under certain orthodontic force when crown-to-root ratio changed in not only normal periodontal condition but also abnormal periodontal and/or teeth condition, the changes of the centers of resistance for maxillary and mandibular 6 anterior teeth as a segment were studied using the laser reflection technique, the lever & pulley force applicator and the photodetector with these quantified variables reducing alveolar bone 2mm by 2mm for each of maxillary 6 anterior teeth until the total amount of 8mm and root 2mm by 2mm for each of mandibular 6 anterior ones until the total amount of 6mm. The results were as follows: 1. Under unreduced condition, the center of resistance during initial displacement of maxillary 6 anterior teeth was located at the point of about $42.4\%$ apically from cemento-enamel junction(CEJ) of the averaged tooth of them and kept shifting to about $76.7\%$ with alveolar bone reduction. 2. The distance from the averaged alveolar crest level of maxillary 6 anterior teeth to the center of resistance for the averaged tooth of them kept decreasing with alveolar bone reduction, but the ratio to length of the averaged root embedded in the alveolar bone was stable at around $33\%$ regardless of that. 3. Under unreduced condition, the center of resistance during initial displacement of mandibular 6 anterior teeth was located at the Point of about $43\%$ apically from CEJ of the averaged tooth of them and this ratio kept increasing to about $54\%$ with root reduction. But the distance from CEJ to the center of resistance decreased from around 5.3mm to around 3.3mm, that is to say, the center of resistance kept shifting toward CEJ with the shortening of root length. 4. A unit reduction of alveolar bone had greater effects on the change of the centers of resistance than that of root did during initial Phase of each reduction. But both of them had similar effects at the middle region of whole length of the averaged root.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.23 no.5
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• pp.345-357
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• 2011

Recently, as part of diversifying energy sources and earth environmental issues, technology development of new renewable energy using wave energy is actively promoted and commercialized around Europe and Japan etc. In particular, OWC(Oscillating Water Column) wave power generation system using air flow induced by vertical movement of the water surface by waves in an air-chamber within caisson is known as the most efficient wave energy absorption device and therefore, is one of the wave power generation apparatus the closest to commercialization. This study examines air flow velocity, which operates turbine(Wells turbine) directly in oscillating water column type wave power generation structure from two-and three-dimensional numerical experiments and discusses optimal shape of oscillating water column type wave power generation structure by estimating the maximum flow rate of air according to change in shape. The three-dimensional numerical wave flume was applied in interpretation for this study which is the model for the immiscible two-phase flow based on the Navier-Stokes Equation. From this, it turned out that size of optimal shape appears differently according to the incident wave period and air flow is maximized at the period where minimum reflection ratio occurs.

• Polymer(Korea)
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• v.33 no.2
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• pp.144-152
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• 2009

The thermal and optical properties of poly {1-(cholesteryloxycarbonylalkanoyloxy) ethylene}s (PCALEn, n=2$\sim$8,10, the number of methylene units in the spacer) were investigated. All of the homologues formed monotropic cholesteric phases with left-handed helical structures. PCALEn with n=2 or 10, in constrast with PCALEn with $3{\leq}n{\leq}8$, did not display reflection colors over the full cholesteric range, suggesting that the helical twisting power of the cholesteryl group highly depends on the length of the spacer connecting the cholesteryl group to the polyethylene chain. The glass transition temperatures decreased with increasing n. The isotropic-cholesteric phase transition temperatures decreased with increasing n up to 7 and showed an odd-even effect. However it became almost constant when n is more than 7. This behavior is rationalized in terms of the change in the average shape of the side chain on varing the parity of the spacer. This rationalization also accounts for the observed variation of the entropy gain for the clearing transition. The thermal stability and degree of order in the mesophase and the temperature dependence of the optical pitch observed for PCALEn were significantly different from those reported for cellulose tri(cholesteryloxycarbonyl)alkanoates. The results were discussed in terms of the differences in the chemical structure and flexibility of main chain and the number of the mesogenic units per repeating unit.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Journal of Korea Water Resources Association
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• v.50 no.1
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• pp.29-35
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• 2017

A vehicle rainfall sensor is made to control the operating speed of wipers depending on rainfall. Therefore this is the apparatus to determine the velocity phase of the wipers roughly based on the amount of rainfall. However, the technology which can judge the size of rainfall amount besides determining speed level of the wipers is developing according to the development of the function of rainfall sensor due to the development of technology. In this study, a rainfall measurement by using light scattering by precipitation particles was used. This measurement is to use light signal reflection from front glass and the bigger particle is the less detection of light by light scattering. The detection area of the rainfall sensor and detection channel were extended sizes to increase the accuracy of the rainfall. Also the W-S-R relational expression was developed by using a relationship between the specific precipitation (R) and the amount of sensor detection (S) when there is speed change of the wipers (W) and an indoor rainfall apparatus was used to convert sensing signal to rainfall. The signal system of vehicle rainfall sensor can be converted to the actual rainfall amount by using this formula and if this is provided to users then the vehicle observation network can produce higher-resolution than actual observation network can be produced.