• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1702-1703
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• 2011

MEMS 소자의 Wafer level Package 관련하여 Deep cavity를 가진 Cap Wafer와 Polymer bonding 중 cavity 단차로 인한 Polymer Patterning 및 접합 불량의 어려움을 극복할 수 있는 새로운 공정 flow를 제안하였다. Cavity를 형성할 때 사용하는 Si deep etching Mask인 기존의 Photoresist를 접합용 감광성 Polymer로 대체하고, cavity 형성 후, 별도의 추가 공정 없이 이 Polymer를 이용해 Wafer bonding을 진행하였다. 이를 통해 cavity 단차에 따른 문제를 해결함과 동시에 공정이 단순하고 제작 비용이 저렴하며, 신뢰성 있는 Wafer level Package를 구현하였다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.2 s.233
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• pp.228-231
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• 2005

In this paper, we present reusable quartz master fabricated by electron-beam lithography and dry etching process of quartz, and results of injection molding based on the reusable quartz master for the manufacturing of nano-scale information media. Since patterned structures of photoresist can be easily damaged by separation (demolding) process of nickel stamper and master, a master with photoresist cannot be reused in stamper fabrication process. In this work, we have made it possible of the repeated use of master by directly patterning on quart in nickel stamper fabrication process. We have designed and fabricated four different specimens including 100nm, 140nm 200nm and 400nm pit patterns. In addition, both intaglio and embossed carving patterns are fabricated for each specimen. In the preliminary test of injection molding, we have fabricated polycarbonate patterns with varying mold temperature. We have experimentally verified the fabrication process of the reusable quart master and possibility of quartz master as direct stamper.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.19.1-19.1
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• 2010

The process of manufacturing printed electronics using printing technology is attracting attention because its process cost is lower than that of the conventional semiconductor process. This technology, which offers both a lower cost and higher productivity, can be applied in the production of organic TFT (thin film transistor), solar cell, RFID(radio frequency identification) tag, printed battery, E-paper, touch screen panel, black matrix for LCD(liquid crystal display), flexible display, and so forth. In general, in order to implement printed electronics, narrow width and gap printing, registration of multi-layer printing by several printing units, and printing accuracy of under $20\;{\mu}m$ are all required. These electronic products require high precision to the degree of tens of microns - in a large area with flexible material, and mass productivity at low cost. As such, the roll-to-roll printing process is attracting attention as a mass production system for these printed electronic devices. For the commercialization of this process, two basic electronic ink technologies, such as conductive ink and polymers, and printing equipment have to be developed. Therefore, this paper addressed basis design and test to develop fine patterning equipment employing the roll-to-roll printing equipment and electronic ink.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1448-1449
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• 2006

Pb(Zr,Ti)$O_3$ is one of the most attractive ferroelectric materials for realizing the FeRAM due to its higher remanant polarization and the ability to withstand higher coercive fields. Generally, the ferroelectric materials were patterned by a plasma etching process for high-density FeRAM. The applicable possibility of CMP process to pattern Pb(Zr,Ti)$O_3$ instead of plasma etching process was investigated in our previous study for improvement of an angled sidewall which prevents the densification of ferroelectric memory and is apt to receive the plasma damage. Our previous study showed that good removal rate with the excellent surface roughness compared to plasma etching process were obtained by CMP process for the patterning of Pb(Zr,Ti)$O_3$. The suitable selectivity to TEOS without any damage to the structural property of Pb(Zr,Ti)$O_3$ was also guaranteed. In this study, the removal mechanism of $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ coated by sol-gel method was investigated. Surface analysis of polished specimens at the best and worst conditions was carried out by XPS.

• Transactions of Materials Processing
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• v.14 no.5 s.77
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• pp.473-476
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• 2005

The demand of on-chip total analyzing system with MEMS (micro electro mechanical system) bio/chemical sensor is rapidly increasing. In on-chip total analyzing system, to detect the bio/chemical products with submicron feature size, a filtration system with nano-filter is required. One of the conventional methods to fabricate nano-filter is to use direct patterning or RIE (reactive ion etching). However, those procedures are very costly and are not suitable fur mass production. In this study, we suggested new fabrication method for a nano-filter based on replication process, which is simple and low cost process. After the Si master was fabricated by laser interference lithography and reactive ion etching process, the polymeric mold was replicated by UV-imprint process. Metallic nano-filter was fabricated after removing the polymeric part of metal deposited polymeric mold. Finally, our fabrication method was applied to metallic nano-filter with $1{\mu}m$ pitch size and $0.4{\mu}m$ hole size for bacteria sensor application.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1214-1218
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• 2006

We introduced simple fabrication process for field emission devices based on carbon nanotubes (CNTs) emitters. Instead of using the ITO material as a transparent electrode, a metal (Au) with thickness of 5-20nm was used. Moreover, the ITO patterning process was eliminated by depositing metal layer, before the CNT printing process. In addition, the thin metal layer on photo resist (PR) layer was used as UV block. We fabricated the CNT field emission arrays of triode structure with simple process. And I-V characteristics of field emission arrays were measured. The maximum current density of $254{\mu}A/cm2$ was achieved when the gate and the anode voltage was kept 150V and 3000V, respectively. The distance between anode and cathode was kept constant.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.2
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• pp.198-202
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• 2015

We present a series of simple but novel nanopatterning methodologies inspired by traditional mechanical machining processes involving rolling, pullout, and forging. First, we introduce roll-to-roll nanopatterning, which adapts conventional rolling for continuous nanopatterning. Then, nano-inscribing and nano-channel lithography are demonstrated, whereby seamless nanogratings can be continuously pulled out, as in a pullout process. Finally, we discuss vibrational indentation micro- and nanopatterning. Similarly to the forging/indentation process, this technique employs high-frequency vertical vibration to indent periodic micro/nanogratings onto a horizontally fed substrate. We discuss the basic principles of each process, along with its advantages, disadvantages, and potential applications. Adopting mature and reliable traditional technologies for small-scale machining may allow continuous nanopatterning techniques to cope with scalable and low-cost nanomanufacturing in a more productive and trustworthy way.

• Journal of Sensor Science and Technology
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• v.24 no.4
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• pp.215-218
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• 2015

As several innovative technologies for flexible electric devices are being realized, demand for in-situ strain monitoring for flexible electric devices is being emphasized. Because flexible devices are commonly influenced by substrate strain, suitable strain sensors for flexible devices are essential for the sophisticated maneuvering of flexible devices. In this study, a flexible strain sensor based on an Ag electrode is prepared on a polyimide substrate using the LDW (laser direct writing) process. In this process, first, the Ag nanoparticles are coated on the substrate and selectively sintered using a focused laser. Because of the advantages of the LDW process (such as being mask-less, using low temperatures, and having non-vacuum characteristics), the entire fabrication process has been dramatically simplified; as a final outcome, a highly reliable strain sensor has been fabricated. Using this strain sensor, various strain conditions that arise from different bending radii can be detected by measuring real-time electrical signals.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.267-272
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• 2006

Optical waveguide based on symmetric and asymmetric Mach-Zehnder interferometer(MZI) type was designed, fabricated and measured the optical characteristics for the application of biosensor. The wavelength of the input optical signal for the device was 1550 nm. And the difference of refractive index was $0.45\;{\Delta}\%$ between core and cladding of the device. The TM(Transverse Magnetic) mode optical properties of the biosensor were analyzed with the refractive index variation of gold thin film deposited for overclad. Nowadays, nano-photonic crystal structures have been paied much attention for its high optical sensitivity. There is a technique to realize the structure, which is called Dip-Pen Nanolithography(DPN) process. The process requires a nano-scale process patterning resolution and high reliability. In this paper, two dimensional nano-photonic crystal array on the surface was proposed for improving the sensitivity of optical biosensor. And the Dip-Pen Nanolithogrphy process was investigated to realize it.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1384-1385
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• 2006

Platinum is a candidate of top and bottom electrode in ferroelectric random access memory and dynamic random access memory. High dielectric materials and ferroelectric materials were generally patterned by plasma etching, however, the low etch rate and low etching profile were repoted. We proposed the damascene process of high dielectric materials and ferroelectric materials for patterning process through the chemical mechanical polishing process. At this time, platinum as a top electrode was used for the stopper for the end-point detection as Igarashi model. Therefore, the control of removal rate in platinum chemical mechanical polishing process was required. In this study, an addition of $H_{2}O_{2}$ oxidizer to alumina slurry could control the removal rate of platinum. The removal rate of platinum rapidly increased with an addition of 10wt% $H_{2}O_{2}$ oxidizer from 24.81nm/min to 113.59nm/min. Within-wafer non-uniformity of platinum after chemical mechanical polishing process was 9.93% with an addition of 5wt% $H_{2}O_{2}$ oxidizer.