• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.5
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• pp.1004-1009
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• 2009

Recently, mass spectrometers are widely used for in-situ chemical analysis. It has rapid response and high sensitivity. In this paper, we present the fabrication and test of a cold cathode emitter for micro mass spectrometer using CNTs(Carbon nano tubes). The CNTs have good mechanical, electrical and chemical characteristics. So they have a long life time and strong robustness. The micro mass spectrometer is composed of the glass substrate and the silicon substrate. The glass substrate is constructed by electrodes for TOF(Time-of-flight) which analyze an ion with mass to charge ratio as ion separator. The silicon substrate is highly doped wafer which is patterned for gate electrode and then 100 11m dry etching to grow the CNTs as the electron emitter. The CNTs are grown by HFCVD(Hot filament chemical vapor deposition) with sputtering the catalyst. We successfully attained to grow the CNTs and to test the characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• Journal of the Korean Magnetics Society
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• v.18 no.2
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• pp.49-53
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• 2008

Magnetic and crystallographic properties of patterned media fabricated by nanoimprint lithography and Co-Pt electroplating were studied. Thin films of Ru(20 nm)/Ta(5 nm)/$SiO_2$(100 nm) were deposited on Si(100) wafer and then 25 nm hole pattern was fabricated by nanoimprint lithography on substrate. The electroplated Co-Pt nano-dots have the diameter of 35 nm and the height of 27 nm. Magnetic dot patterns of Co-Pt alloy were created using electroplated Co-Pt alloy and then their properties were measured by MFM, SQUID, SEM, TEM and AFM. We observed single domain with perendicular anisotropy for each dot and achieved optimum coercivity of 2900 Oe. These results mean that patterned media fabricated by nanoimprint lithography and electroplating have good properties in view of extending superparamagnetic limit while satisfying the writability requirements with the present write heads.

• 한국생물공학회:학술대회논문집
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• 2003.04a
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• pp.643-643
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• 2003

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.499-500
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• 2010

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.348-351
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• 2008

We suggest a viewing angle control mode of liquid crystal display(LCD) with additive thermal controllable optical layer [TCOL], which composed of homeotropically or homogenously well aligned LC layer and patterned hating lines on a substrate. In this system, LCD modes with wide viewing angle characteristics can be used as a main panel.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.640-643
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• 2008

In this work, a novel tunable MIM capacitor with the meshed electrode is proposed first in order to improve the tunability characteristics using fringe fields. The capacitors were fabricated on a low-resistivity Si substrate employing lead zinc niobate (PZN) thin film dielectric. The fabricated capacitor with the meshed electrode, whose line width and spacing was $2.5{\mu}m$, achieved the effective capacitance tunability of 31 % that is higher value of 18.5 % than that of the conventional capacitor with the rectangular-type electrode.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.355-356
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• 2008

The light extraction efficiencies of GaN-based light-emitting diodes (LEDs) grown on differently patterned sapphire substrates were investigated by using the ray tracing method. It was found that angle of the pattern surface against the sapphire surface, the number of pattern per unit area were important structural factors for high extraction efficiency.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.164-164
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• 2012

청색 발광 다이오드의 광추출 효율 향상 및 전기적 특성 향상을 위하여 기판이 되는 사파이어에 마이크로급 패턴을 형성하는 공정이 일반적으로 사용되고 있다. 기존의 공정과는 달리, 저가의 간단한 공정을 통해 쉽게 유사한 성능 향상을 얻기 위하여, 나노임프린트 리소그래피 공정을 도입하여 사파이어 기판 상에 일정한 주기와 형태를 갖는 나노 패턴을 형성하였으며, 이를 이용하여 제작한 발광 다이오드의 성능이 전기적, 광학적 측면에서 크게 향상되었음을 확인할 수 있었다.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1513_1514
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• 2009

This paper reports on a fabrication of novel substrate integrated waveguide (SIW)-based shielded stripline applicable to the broadband transverse electromagnetic (TEM) single-mode propagation. We suggested a structure for half-SIW and half-shielded stripline, which combined through the benzocyclobutene (BCB) bonding layer. The electrical interconnection between the sidewall of anisotropic wet-etched silicon and patterned BCB layers is measured subsequent to the metalization on the side wall. The proposed SIW-based shielded stripline has great potential in terms of simple fabrication, integration with planar circuits and monolithic system fabricated on a SIW structure.