• Title/Summary/Keyword: passive chip

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A SPICE SIMULATION FOR A ZVS CMOS DC/DC CONVERTER (ZVS를 사용한 저전압 CMOS 고집적회로 DC/DC 컨버터의 SPICE 시뮬레이션)

  • 전재훈;김종태
    • Proceedings of the IEEK Conference
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    • 1999.11a
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    • pp.259-262
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    • 1999
  • This paper presents the design of highly efficient one-chip CMOS DC/DC converter. The converter operates at the switching frequency of 1MHz for reducing the size of passive elements. And use the zero voltage switching(ZVS) for minimizing switching loss at high frequency. The simulation shows that the circuit can achieve a 95% efficiency while delivering a load of 1W at 2V output.

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Studies on the Design and Fabrication of MMIC Power Amplifier for X-band (X-band용 MMIC 전력증폭기의 설계 및 제작에 관한 연구)

  • 이성대;이호준;이응호;윤용순;박현식;이진구
    • Proceedings of the IEEK Conference
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    • 1999.11a
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    • pp.159-162
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    • 1999
  • In this paper, we have designed and fabricated a MMIC power amplifier for X-band using AlGaAs/InGaAs/GaAs PM-HEMTs and passive devices such as Ti thin film resistors, rectangular spiral inductors and MIM capacitors. The fabricated MMIC power amplifier for X-band shows that S/ sub 21/ and S$_{11}$ are 14.804 ㏈ and -29.577 at 8.18 GHz, respectively. The chip size is 1.86$\times$1.29 $\textrm{mm}^2$.>.>.

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Implementation of a Predictor for Cell Phase Monitoring at the OLT in the ATM-PON (ATM-PON의 OLT에서 상향 셀 위상감시를 위한 예측기의 구현)

  • Mun, Sang-Cheol;Chung, Hae;Kim, Woon-Ha
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.27 no.2C
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    • pp.160-169
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    • 2002
  • An ATM-PON (Passive Optical Network) system consists of an OLT (Optical Line Termination), multiple ONUs (Optical Network Units) and the optical fiber which has a PON (Passive Optical Network)configuration with a passive optical splitter. To avoid cell collisions on the upstream transmission, an elaborate procedure called as ranging is needed when a new ONU is installed. The ONU can send upstream cells according to the grant provided by the OLT after the procedure. To prevent collisions being generated by the variation of several factors, OLT must performs continuously the cell phase monitoring. It means that the OLT predicts the expected arrival time, monitors the actual arrival time for all upstream cells and calculates the error between the times. Accordingly, TC (Transmission Convergence) chip in the OLT needs a predictor which predicts the time that the cell will arrive for the current grant. In this paper, we implement the predictor by using shift registers of which the length is equivalent to the equalized round trip delay. As each register consists of 8 bit, OLT can identify which ONU sends what type of cell (ranging cell, user cell, idle cell, and mini-slot). Also, TC chip is designed to calculate the effective bandwidth for all ONUs by using the function of predictor. With the time simulation and the measurement of an implemented optical board, we verify the operation of the predictor.

900MHz RFID Passive Tag Frontend Design and Implementation (900MHz 대역 RFID 수동형 태그 전치부 설계 및 구현)

  • Hwang, Ji-Hun;Oh, Jong-Hwa;Kim, Hyun-Woong;Lee, Dong-Gun;Roh, Hyoung-Hwan;Seong, Yeong-Rak;Oh, Ha-Ryoung;Park, Jun-Seok
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.35 no.7B
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    • pp.1081-1090
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    • 2010
  • $0.18{\mu}m$ CMOS UHF RFID tag frontend is presented in this paper. Several key components are highlighted: the voltage multiplier based on the threshold voltage terminated circuit, the demodulator using current mode, and the clock generator. For standard compliance, all designed components are under the EPC Global Class-1 Generation-2 UHF RFID protocol. Backscatter modulation uses the pulse width modulation scheme. Overall performance of the proposed tag chip was verified with the evaluation board. Prototype Tag Chip dimension is neary 0.77mm2 ; According to the simulation results, the reader can successfully interrogate the tag within 1.5m. where the tag consumes the power about $71{\mu}W$.

Characteristics of Embedded R, L, C Fabricated by Using LTCC-M Technology and Development of a PAM for LMR thereby (LTCC-M 기술을 이용한 내부실장 R, L, C 수동소자의 특징 및 LMR용 PAM개발)

  • 김인태;박성대;강현규;공선식;박윤휘;문제도
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.1
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    • pp.13-18
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    • 2000
  • Low temperature co-fired ceramics on metal (LTCC-M) is efficient for embedding passive components with good tolerance in a module due to the dimensional stability in x and y directions by the constraint of metal core during the firing. In addition, the radiation noise can be reduced by metal core. In this paper, embedded passive components were introduced and a power amplifier module (PAM) fabricated by using the passive components was explained. The embedded passive components in test patters showed the tolerance of 10~20% and the good repeatability in tolerance of embedded passives was maintained in module fabrication. The shortened traces in multi chip modules (MCMs) make the signal delay time decreased and the embedded passives simplify the packaging processes owing to the less solder points, which enhance the electrical performance and increase the reliability of the modules. The LTCC-M technology is one of the promising candidates for RF application and is expected to expand its applications to power and high performance devices.

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Development of the passive tag RF-ID system at 2.45 GHz (2.45 GHz 수동형 태그 RF-ID 시스템 개발)

  • 나영수;김진섭;강용철;변상기;나극환
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.8
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    • pp.79-85
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    • 2004
  • In this paper, the RF-ID system for ubiquitous tagging applications has been designed, fabricated and analysed. The RF-ID System consists of passive RF-ID Tag and Reader. The passive RF-ID tag consists of rectifier using zero-bias schottky diode which converts RF power into DC power, ID chip, ASK modulator using bipolar transistor and slot loop antenna. We suggest an ASK undulation method using a bipolar transistor to compensate the disadvantage of the conventional PIN diode, which needs large current Also, the slot loop antenna with wider bandwidth than that of the conventional patch antenna is suggested The RF-ID reader consist of patch array antenna, Tx/Rx part and ASK demodulator. We have designed the RF-ID System using EM and circuit simulation tools. According to the measured results, The power level of modulation signal at 1 m from passive RF-ID Tag is -46.76 dBm and frequency of it is 57.2 KHz. The transmitting power of RF-ID reader was 500 mW

A Design and Implementation of NFC Bridge Chip (NFC 브릿지 칩 설계 및 구현)

  • Lee, Pyeong-Han;Ryu, Chang-Ho;Chun, Sung-Hun;Kim, Sung-Wan
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.3
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    • pp.96-101
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    • 2015
  • This paper describes a design and implementation of the NFC bridge chip which performs interface between kinds of devices and mobile phones including NFC controller through NFC communication. The NFC bridge chip consists of the digital part and the analog part which are based on NFC Forum standard. Therefore the chip treats RF signals and then transforms the signal to digital data, so it can interface kinds of devices with the digital data. Especially the chip is able to detect RF signals and then wake up the host processor of a device. The wakeup function dramatically decreases the power consumption of the device. The carrier frequency is 13.56MHz, and the data rate is up to 424kbps. The chip has been fabricated with SMIC 180nm mixed-mode technology. Additionally an NFC bridge chip application to the blood glucose measurement system is described for an application example.

Physical Media Dependent Prototype for 10-Gigabit-Capable PON OLT

  • Kim, Jongdeog;Lee, Jong Jin;Lee, Seihyoung;Kim, Young-Sun
    • ETRI Journal
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    • v.35 no.2
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    • pp.245-252
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    • 2013
  • In this work, we study the physical layer solutions for 10-gigabit-capable passive optical networks (PONs), particularly for an optical link terminal (OLT) including a 10-Gbit/s electroabsorption modulated laser (EML) and a 2.5-Gbit/s burst mode receiver (BM-Rx) in a novel bidirectional optical subassembly (BOSA). As unique features, a bidirectional mini-flat package and a 9-pin TO package are developed for a 10-gigabit-capable PON OLT BOSA composed of a 1,577-nm EML and a 1,270-nm avalanche photodiode BM-Rx, including a single-chip burst mode integrated circuit that is integrated with a transimpedance and limiting amplifier. In the developed prototype, the 10-Gbit/s transmitter and 2.5-Gbit/s receiver characteristics are evaluated and compared with the physical media dependent (PMD) specifications in ITU-T G.987.2 for XG-PON1. By conducting the 10-Gbit/s downstream and 2.5-Gbit/s upstream transmission experiments, we verify that the developed 10-gigabitcapable PON PMD prototype can operate for extended network coverage of up to a 40-km fiber reach.

Battery-free slotted patch antenna sensor for wireless strain and crack monitoring

  • Yi, Xiaohua;Cho, Chunhee;Wang, Yang;Tentzeris, Manos M.
    • Smart Structures and Systems
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    • v.18 no.6
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    • pp.1217-1231
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    • 2016
  • In this research, a slotted patch antenna sensor is designed for wireless strain and crack sensing. An off-the-shelf RFID (radiofrequency identification) chip is adopted in the antenna sensor design for signal modulation. The operation power of the RFID chip is captured from wireless reader interrogation signal, so the sensor operation is completely battery-free (passive) and wireless. For strain and crack sensing of a structure, the antenna sensor is bonded on the structure surface like a regular strain gage. Since the antenna resonance frequency is directly related with antenna dimension, which deforms when strain occurs on the structural surface, the deformation/strain can be correlated with antenna resonance frequency shift measured by an RFID reader. The slotted patch antenna sensor performance is first evaluated through mechanics-electromagnetics coupled simulation. Extensive experiments are then conducted to validate the antenna sensor performance, including tensile and compressive strain sensing, wireless interrogation range, and fatigue crack sensing.

LTCC기술을 활용한 VCO모듈

  • 이영신;유찬세;이우성;강남기
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.3
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    • pp.12-24
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    • 2001
  • The key advantage of LTCC(low temperature co-fired ceramics) technology is the ability to integrate passive components such as resistors, capacitors, and inductors. More compact circuits with an increased scale of integration are needed with the development for advanced telecommunication system such as IMT-2000. LTCC technology can be obtained by removing these elements from the substrate surface to inside of ceramic body. And it can miniaturize the wireless phone through integration of planar patch antenna, duplexer, band pass filter, bias line, circuit of impedance matching and RF choke etc. Futhermore, with the multilayer chip process and its outstanding electrical material characteristics, LTCC is predestined for highly-integrated, cost effective wide band applications. This paper focuses on the general description of LTCC MCM technologies and the fabrication of the multilayer VCO module.

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