• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.34.2-34.2
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• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.743-746
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• 2000

The removal of contaminants of silicon wafers has been investigated by various methods. Laser cleaning is the new dry cleaning technique to replace wafer wet cleaning in the near future. A dry laser cleaning uses inert gas jet to remove contaminant particles lifted off by the action of a KrF excimer laser. A laser cleaning model is developed to simulate the cleaning process and analyze the influence of contaminant particles and experimental parameters on laser cleaning efficiency. The model demonstrates that various types of submicrometer-sized particles from the front sides of silicon wafer can be efficiently removed by laser cleaning. The laser cleaning is explained by a particle adhesion model. including van der Waals forces and hydrogen bonding, and a particle removal model involving rapid thermal expansion of the substrate due to the thermoelastic effect. In addition, the experiment of wafer laser cleaning using KrF excimer laser was conducted to remove various contaminant particles.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 2010.04a
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• pp.7-7
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• 2010

Flotation deinking is a common practice for removing ink from recovered paper, and it is becoming a key process in many recycling paper mills. Flotation deinking was successfully introduced to the paper recycling industry in the 1980s, and its applications in wax removal, stickies control, and fiber fractionation have attracted great research interest. A successful flotation process has three major efficient subprocesses: the detachment of the ink particles from the fibers, the effective adhesion of the ink particles onto air bubble surfaces, and the removal of froth and ink particles from flotation cells. Surfactants can affect these subprocesses either positively or negatively. To understand how a surfactant can positively and negatively affect the flotation deinking process, the basic chemistry of surfactant in solution should be discussed.

• Journal of the Korean Society of Clothing and Textiles
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• v.17 no.3
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• pp.380-390
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• 1993

Effect of interfacial electrical conditions on adhesion of ${\alpha}-Fe_2O_3$ particles to PET fabric and the removal of ${\alpha}-Fe_2O_3$ particles from PET fabric, were investigated as functions of pH, electrolyte and ionic strength. The ${\zeta}$ potential of PET fiber and ${\alpha}-Fe_2O_3$ particles in the electrolyte solution were measured by streaming potential and microelectrophoresis methods respectively. The potential energy of interaction between ${\alpha}-Fe_2O_3$ particles and PET fabric were calculated by using the heterocoagulation theory for a sphere-plate model. The negative ${\zeta}$ potential of ${\alpha}-Fe_2O_3$ particle and PET fiber increased with pH, and then decreased certain pH and isoelectric points of ${\alpha}-Fe_2O_3$ particles and PET fiber were pH 6.5 and pH 3.5, respectively. The negative ${\zeta}$ potential of ${\alpha}-Fe_2O_3$ particle and PET fiber affected by electrolytes, were relatively high with polyanion electrolytes in solutions and were low with neutral salts. However, at surfactant solution, ${\zeta}$ potential was levelled off. The influence of the ionic strength on the ${\zeta}$ potential of ${\alpha}-Fe_2O_3$ particle was small but the negative ${\zeta}$ potential of PET fiber increased with the ionic strength. In the presence of anionic surfactant, the ${\zeta}$ potential of ${\alpha}-Fe_2O_3$ particle and PET fiber increased regardless of solution conditions. The interaction energy between ${\alpha}-Fe_2O_3$ particle and PET fabric increased with pH. The interaction energy was relatively high with polyanion electrolytes in solution, and the influence of ionic strength on the interaction energy was small, and the effective thickness of electrical double layer increased with decreasing the ionic strength.

• Laser Solutions
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• v.6 no.3
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• pp.29-35
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• 2003

In semiconductor processing, there are two types of particle contaminated onto the wafer, i.e. dry and wet state particles. In order to evaluate the cleaning performance of laser shock wave cleaning method, the removal of 1 m sized alumina particle at different particle conditions from silicon wafer has been carried out by laser-induced shock waves. It was found that the removal efficiency by laser shock cleaning was strongly dependent on the particle condition, i.e. the removal efficiency of dry alumina particle from silicon wafer was around 97％ while the efficiencies of wet alumina particle in DI water and IPA are 35％ and 55％ respectively. From the analysis of adhesion forces between the particle and the silicon substrate, the adhesion force of the wet particle where capillary force is dominant is much larger than that of the dry particle where Van der Waals force is dominant. As a result, it is seen that the particle in wet condition is much more difficult to remove from silicon wafer than the particle in dry condition by using physical cleaning method such as laser shock cleaning.

• Proceedings of the Membrane Society of Korea Conference
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• 1998.04a
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• pp.105-109
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• 1998

1. Introduction : In microfiltration the transport, deposition and removal of particles control cake formation on a filter. In this connection a new model on cake formation, based on the wall shear stress, was tested here in comparison with experiments of fine particle slurry under Taylor-vortex flow. The model expresses the deposition process for particles as two first-order steps in series of mass transfer and adhesion, and their removal process as a linear relation to the wall shear stress. This embraces characteristics of both dead-end and crossflow filtration. The correlation resulting from fitting to experimental data represented the experimental data reasonably well. This study will be helpful in analyzing fouling in heat exchangers.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.9
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• pp.109-115
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• 2008

The cleaning process of contaminant particles adhering to the microchips, integrated circuits (ICs) or the like is essential in modern microelectronics industry. In the cleaning process particularly working with the application of inert gases, the removal of contaminant particles of submicron scale is very difficult because the particles are prone to reside inside the boundary layer of the working fluid, The use of cryogenic $CO_2$ cleaning method is increasing rapidly as an alternative to solve this problem. In contrast to the merits of high efficiency of this process in the removal of minute particles compared to the others, even fundamental parametric studies for the optimal process design in this cleaning process are hardly done up to date, In this study, we attempted to measure the cleaning efficiency with the variations of some principal parameters such as mass flow rate, injection distance and angle, and tried to draw out optimal cleaning conditions by measuring and evaluating an effective cleaning width called $d_{50}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.529-529
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• 2007

Ruthenium (Ru) is a white metal and belongs to platinum group which is very stable chemically and has a high work function. It has been widely studied to apply Ru as an electrode material in memory devices and a Cu diffusion barrier metal for Cu interconnection due to good electrical conductivity and adhesion property to Cu layer. To planarize deposited Ru layer, chemical mechanical planarization(CMP) was suggested. However, abrasive particle can induce particle contamination on the Ru layer surface during CMP process. In this study, zeta potentials of Ru and interaction force of alumina particles with Ru substrate were measured as a function of pH. The etch rate and oxidation behavior were measured as a function of chemical concentration of several organic acids and other acidic and alkaline chemicals. PRE (particle removal efficiency) was also evaluated in cleaning chemical.

• Nuclear Engineering and Technology
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• v.48 no.1
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• pp.182-188
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• 2016

In this paper, a feasible strategy for the recycling of nuclear graphite is reported, based on the formation mechanism and the removal of carbon-14 by micro-oxidation. We investigated whether ground micro-oxidation graphite could be used as a filler to make new recycled graphite and which graphite/pitch coke ratio will give the recycled graphite outstanding properties (e.g., apparent density, flexural strength, compressive strength, and tensile strength). According to the existing properties of nuclear graphite, the ratio of graphite to pitch coke should not exceed 3. The recycled reactor graphite has been proven superior in density, strength, and thermal conductivity. The micro-oxidation process enhances the strength of the recycled graphite because there are more pores and unsmooth surfaces on the oxidized graphite particles, which is beneficial for the access of the pitch binder and leads to efficient joint adhesion among the graphite particles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.114-118
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• 2009

PVA (polyvinyl alcohol) brush cleaning method is a typical cleaning method for semiconductor cleaning process especially post-CMP cleaning. PVA brush contacts with the wafer surface and abrasive particle, generating the contact rotational torque of the brush, which is the removal mechanism. The brush rotational torque can overcome theoretically the adhesion force generated between the abrasive particle and wafer by zeta potential. However, after CMP (chemical mechanical polishing) process, many particles remained on the wafer because the brush was contaminated in previous post-CMP cleaning step. The abrasive particle on the brush redeposits to the wafer. The level of the brush contamination increased according to the cleaning run time. After cleaning the brush, the level of wafer contamination dramatically decreased. Therefore, the brush cleanliness effect on the cleaning performance and it is important for the brush to be maintained clearly.