• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1093-1096
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• 2008

The circuit simulation has been done on the current-programmed AMOLED and shows that the circuit which behaves as a negative capacitance can reduce the effect of parasitic capacitance fixed on the data-line and can accelerate the current programming speed as high as that required in Full HD AMOLED.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.159-165
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• 1995

A gate-recessed structure is introduced to SOI MOSFET's in order to increase the source-to-drain breakdown voltage. A significant increase in the breakdown voltage is observed compared with that of a planar single source/drain SOI MOSFET without inducing the appreciable reduction of the current drivability. We have analyzed the origin of the breakdown voltage improvement by the substrate current measurements and 2-D device simulations, and shown that the breakdown voltage improvement is caused by the reductions in the impact ionization rate and the parasitic bipolar current gain.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.4
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• pp.386-392
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• 2002

This paper presents a basic characteristics of 4-element circular array dipole antennas for 4-sector beam steering. The coupled integral equations for the unknown current distributions on dipole elements are derived and solved by applying Galerkin's method of moments. The parasitic elements have been used to increase the directional gain and the beam is steered electronically either by sswitching between the parasitic elements or switching the position of the active element. The parasitic elements are switched short-circuited or open-circuited as required to steer a directional beam. In order to verify the theoretical analysis, the radiation pattern was compared with experiments.

• BMB Reports
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• v.49 no.11
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• pp.590-597
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• 2016

Parasitic diseases remain an unarguable public health problem worldwide. Liver fluke Clonorchis sinensis is a high risk pathogenic parasitic helminth which is endemic predominantly in Asian countries, including Korea, China, Taiwan, Vietnam, and the far eastern parts of Russia, and is still actively transmitted. According to the earlier $8^{th}$ National Survey on the Prevalence of Intestinal Parasitic Infections in 2012, C. sinensis was revealed as the parasite with highest prevalence of 1.86% in general population among all parasite species surveyed in Korea. This fluke is now classified under one of the definite Group 1 human biological agents (carcinogens) by International Agency of Research on Cancer (IARC) along with two other parasites, Opisthorchis viverrini and Schistosoma haematobium. C. sinensis infestation is mainly linked to liver and biliary disorders, especially cholangiocarcinoma (CCA). For the purposes of this mini-review, we will only focus on C. sinensis and review pathogenesis and carcinogenesis of clonorchiasis, disease condition by C. sinensis infestation, and association between C. sinensis infestation and CCA. In this presentation, we briefly consider the current scientific status for progression of CCA by heavy C. sinensis infestation from the food-borne trematode and development of CCA.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.42-44
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• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.22 no.4
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• pp.868-878
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• 1998

There are recently increasing needs for precision XYZ-stage in the fields of nanotechnology, specially in AFMs(Atomic Force Microscope) and STMs(Scanning Tunneling Microscope). Force measurements are made in the AFM by monitoring the deflection of a flexible element (usually a cantilever) in response to the interaction force between the probe tip and the sample and controlling the force neasyred constant topography can be obtained. The power of the STM is based on the strong distance dependence of the tunneling current in the vacuum chamber and the current is a feedback for the tip to trace the surface topography. Therefore, it is required for XYZ-stage to position samples with nanometer resolution, without any crosscouples and any parasitic motion and with fast response. Nanometer resolution is essential to investigate topography with reasonable shape. No crosscouples and parasitic motion is essential to investigate topography without any shape distortion. Fast response is essential to investigate topography without any undesirable interaction between the probe tip and sample surface ; sample scratch. To satisfy these requirements, this paper presents a novel XYZ-stage concept, it is actuated by PZT and has a monolithic flexible body that is made symmetric as possible to guide the motion of the moving body linearly. PZT actuators have a very fast response and infinite resolution. Due to the monolithic structure, this XYZ-stage has no crosscouples and by symmetry it has no parasitic motion. Analytical modeling of this XYZ-stage and its verification by FEM modeling are performed and optimal design that is to maximize 1st natural frequencies of the stage is also presented and with that design values stage is manufactured.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.7
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• pp.32-37
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• 1993

A novel insulated gate bipolar transister (IGBT), called insulated trench cathode IGBT (ISTC-IGBT), is proposed. ISTC-IGBT has a trenched well with the shallow P$^{+}$ juction in the conventional IGBT structure. The proposed structure has the capability of effectively suppressing the parasitic thyristor latchup. The holding current of ISTC-IGBT is about 2.2 times greater than that of the conventional IGBT. Detailed analysis of the latchup characteristics of ISTC-IGBT is performed by using the two-dimensional device simulator, PISCES-II B.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.3
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• pp.274-281
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• 2005

A new resonant pulse converter for energy harvesting is proposed. The converter transfers energy from a low-voltage AC current to a battery. The low-voltage AC current source is an equivalent of the piezoelectric generator, which converts the mechanical energy to the electric energy. The converter consists of a full-bridge rectifier having four N-type MOSFETs and a boost converter haying N-type MOSFET and P-type MOSFET instead of diode. Switching of MOSFETs utilizes the capability of the $3^{rd}$ regional operation. The operational principles and switching method for the power control of the converter are investigated with the consideration of effects of the parasitic capacitances of MOSFETs. Simulation and experiment are performed to prove the analysis of the converter operation and to show the possibility of the $\mu$W energy harvesting.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.156-161
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• 2006

In this paper, GPS/IMT2000/Wireless LAN compact chip antenna is designed for mobile communication system. The proposed antenna size is $10.2mm{\times}21mm{\times}1mm$. It consists of three meander lines. dual resonance frequencies is achieved by two effective current paths using two meander lines and via. also The parasitic meander line structure is added. The coupling is adjusted by arranging parasitic meander line for triple-band. The fabricated antenna achieve triple-band. The resonance frequencies are 1.672GHz, 2.092GHz, 2.504GHz. The impedance bandwidths of each resonance frequencies are 156MHz, 272MHz, 64MHz. The maximum radiation gains of fabricated antenna are 0.08dBi, 1.67dBi, -1.44dBi. The proposed antenna achieve quasi monopole radiation pattern.

• Parasites, Hosts and Diseases
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• v.44 no.3
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• pp.243-246
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• 2006

In order to determine the current infection status of pond smelts, Hypomesus olidus, and other freshwater fishes with trematode metacercariae, a total of 4,861 pond smelts and 18 other freshwater fishes, collected from the Soyang and Uiam Lakes in Gangwon-do, the Unam Lake in Jeollabuk-do, the Jangseong Lake in Jeollanam-do, the Uirim-ji (lake) in Chungcheongbuk-do, and the Andong Lake in Gyeongsangbuk-do, were individually digested with 1 % pepsin-HCI and examined under a dissecting microscope. In all pond smelts caught from the 6 lakes, we were unable to detect any known human infectious trematode metacercariae in Korea. However, in other freshwater fishes, such as, Squalidus japonicus coreanus (Unam Lake), and Zacco platypus (Jangseong Lake) and Opsariichthys uncirostris amurensis (Jangseong Lake), metacercariae of human-infecting trematodes, i.e., Clonorchis sinensis and Metagonimus sp. were detected, respectively.