• Journal of the Korean Data and Information Science Society
• /
• v.10 no.2
• /
• pp.279-288
• /
• 1999

In many cases where the conventional binomial distribution fails to apply to real world data, it is mainly due to the lack of independence among Bernoulli trials. Several authors have proposed models that are useful when independence assumption is not satisfied. In this paper, one proposed model is adapted, and estimators of dependence related parameter that is crucial in defining that model are considered. Simulation is performed to compare two estimators(method of moment estimator and maximum likelihood estimator) of dependence related parameter, and conclusions are made.

• Proceedings of the Korean Society for Information Management Conference
• /
• 1994.12a
• /
• pp.19-22
• /
• 1994

the Term Dependence Models has been examined in vew of the theoretical aspects. For the feasibility of these models in an operational system, the parameter estimation problem and other alternative solution has been included.

• Electrical & Electronic Materials
• /
• v.7 no.2
• /
• pp.107-116
• /
• 1994

In the manufacturing of VLSI circuits, variations of device characteristics due to the slight differences in process parameters drastically aggravate the performances of fabricated devices. Therefore, it is very important to establish optimal process conditions in order to minimize deviations of device characteristics. In this paper, we used one-dimensional process simulator, SUPREM-II, and two dimensional device simulator, MINIMOS 4.0 in order to extract optimal process parameter which can minimize changes of the device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derived the dependence relations between process parameters and device characteristics. Here, we have suggested a method to extract process parameters from design trend curve(DTC) obtained by these dependence relations. And we have discussed short channel effects and device limitations by scaling down MOSFET dimensions.

• Korean Journal of Optics and Photonics
• /
• v.4 no.4
• /
• pp.434-441
• /
• 1993

Focusing geometry dependence of output Stokes energy in single pass methane Raman shifter is investigated. The experimental result shows that the threshold energy decreases as confocal parameter increases. This result can be explained by gain suppression caused by Stokes - anti-Stokes coupling. In this paper, we give simple analysis for the focusing geometry dependence of Stokes - anti-Stokes coupling and present the criterion of confocal parameter to reduce the gain suppression. Focusing geometry dependence of stimulated Brillouin scattering is measured and the result is in good agreement with theoretical prediction.

• Journal of applied mathematics & informatics
• /
• v.5 no.3
• /
• pp.811-818
• /
• 1998

A cylindrical elastic layer in finite deformation s con-sidered. The characteristics of the linear longitudinal wave and the nonlinear shear wave are investigated; the dependence of the later on the parameter of large deformation is given.

• The Bulletin of The Korean Astronomical Society
• /
• v.42 no.2
• /
• pp.47.2-47.2
• /
• 2017

We investigate the environmental effects on galaxy spin using the sample of ~1100 galaxies from the first public data of MaNGA integral field unit survey. We determine the spin parameter ${\lambda}_{Re}$ of galaxies by analyzing the two-dimensional stellar kinematic measurements within the effective radius, and study its dependence on the large-scale (background mass density determined with 20 nearby galaxies) and small-scale (distance to and morphology of the nearest neighbor galaxy) environments. We first examine the mass dependence of galaxy spin, and find that the spin parameter decreases with stellar mass at log ($M_{\ast}/M_{\odot}$) > 10, consistent with previous studies. We then divide the galaxies into three subsamples using their stellar masses to minimize the mass effects on galaxy spin. The spin parameter of galaxies in each subsample does not change with the background density, but do change with the distance to and morphology of the nearest neighbor. The spin parameter increases when late-type neighbors are within the virial radius, and decreases when early-type neighbors are within the virial radius. These results suggest that the large-scale environments hardly affect the galaxy spin, but the effects of small-scale environments such as hydrodynamic galaxy-galaxy interactions are substantial.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.382-383
• /
• 2013

Gate-controlled spin-orbit interaction parameter is a key factor for developing spin-Field Effect Transistor (Spin-FET) in a quantum well structure because the strength of the spin-orbit interaction parameter decides the spin precession angle [1]. Many researches show the control of spin-orbit interaction parameter in n-type quantum channels, however, for the complementary logic device p-type quantum channel should be also necessary. We have calculated the spin-orbit interaction parameter and the effective mass using the Shubnikov-de Haas (SdH) oscillation measurement in a GaSb two-dimensional hole gas (2DHG) structure as shown in Fig 1. The inset illustrates the device geometry. The spin-orbit interaction parameter of $1.71{\times}10^{11}$ eVm and effective mass of 0.98 $m^0$ are obtained at T=1.8 K, respectively. Fig. 2 shows the gate dependence of the spin-orbit interaction parameter and the hole concentration at 1.8 K, which indicates the spin-orbit interaction parameter increases with the carrier concentration in p-type channel. On the order hand, opposite gate dependence was found in n-type channel [1,2]. Therefore, the combined device of p- and n-type channel spin transistor would be a good candidate for the complimentary logic device.

• English Language & Literature Teaching
• /
• v.12 no.2
• /
• pp.177-194
• /
• 2006

Snyder (2001) proposes that complex predicate constructions are interrelated by shared dependence on a single parameter, the Compounding Parameter, and that the global application of the parameter explains the simultaneous acquisition of the complex predicate constructions and N-N compounds in L1 acquisition of English. Slabakova (2002) examined the status of the Compounding Parameter in the acquisition of L2 Spanish by instructed learners. The result of the study, however, was not compatible with the prediction of the Compounding Parameter, possibly due to the availability of negative evidence in the input. Building upon Slabakova's study, this paper examines the status of the Compounding Parameter in naturalistic L2 learning. It is shown that the naturalistic L2 learners do not acquire the complex predicate constructions and N-N compounds concurrently contra to the prediction of the Compounding Parameter. It is suggested that the validity of the Compounding Parameter as a theoretical construct be reconsidered.

• Electrical & Electronic Materials
• /
• v.9 no.8
• /
• pp.799-805
• /
• 1996

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of device characteristics due to the process parameters. In this paper, we used process simulator and device characteristics caused by process parameter variation. From this simulation, it has been ' derived to the dependence relations between process parameters and device characteristics. The experimental result of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.36 no.2
• /
• pp.112-120
• /
• 2016

The nonlinearity parameter is frequently measured as a sensitive indicator in damaged material characterization or tissue harmonic imaging. Several previous studies have employed the plane wave solution, and ignored the effects of beam diffraction when measuring the non-linearity parameter ${\beta}$. This paper presents a multi-Gaussian beam approach to explicitly derive diffraction corrections for fundamental and second harmonics under quasilinear and paraxial approximation. Their effects on the nonlinearity parameter estimation demonstrate complicated dependence of ${\beta}$ on the transmitter-receiver geometries, frequency, and propagation distance. The diffraction effects on the non-linearity parameter estimation are important even in the nearfield region. Experiments are performed to show that improved ${\beta}$ values can be obtained by considering the diffraction effects.