• Title/Summary/Keyword: paper substrate

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Synthesis of CNTs with Plasma Density and Tilt Degree of Substrate (플라즈마 밀도와 기판의 기울임 정도에 따른 탄소나노튜브의 성장)

  • Choi, Eun-Chang;Kim, Kyung-Uk;Hong, Byung-You
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.7
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    • pp.612-615
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    • 2009
  • We need to control the growth orientation of CNTs on a substrate for applications to various electric devices. Generally, the flow direction of feed gases and electric field between two electrode affect to growth orientations of CNTs. In this paper, we varied tilt degrees $(0^{\circ},\;20^{\circ},\;35^{\circ},\;50^{\circ},\;65^{\circ},\;90^{\circ})$ of substrates on a cathode and DC bias voltages (0, 500, 700 V) applied between two electrodes in order to change growth orientations of CNTs. We confirmed that tilt degrees of the substrate and variation of DC bias voltages affected to the shape and orientation of the grown CNTs on the substrate.

Fabrication of Copper Electrode Array and Test of Electrochemical Discharge Machining for Glass Drilling (유리의 미세 구멍 가공을 위한 구리 전극군 제작 및 전기 화학 방전 가공 시험)

  • Jung, Ju-Myoung;Sim, Woo-Young;Jeong, Ok-Chan;Yang, Sang-Sik
    • Proceedings of the KIEE Conference
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    • 2003.10a
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    • pp.297-299
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    • 2003
  • In this paper, we present the fabrication of copper electrode array and test of electrochemical discharge machining for the fabrication of microholes on Borofloat33 glass. Copper electrode array is fabricated by the bonding of silicon upper substrate and lower substrate and copper electroplate. The silicon upper electrode having microholes fabricated by ICP-RIE is the mold of copper electroplate. The lower substrate is used as the seed layer for copper electroplate after Au - Au thermocompression bonding with the upper substrate.

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Thick Copper Substrate Fabrication by Air-Cooled Lapping and Post Polishing Process (공기 냉각 방식의 래핑을 이용한 구리 기판 연마 공정 개발)

  • Lee, Ho-Cheol;Kim, Dong-Jun;Lee, Hyun-Il
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.19 no.5
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    • pp.616-621
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    • 2010
  • New type of the base material of the light-emitting diode requires copper wafer in view of heat and electrical conductance. Therefore, polishing process of the substrate level is needed to get a nanometer level of surface roughness as compared with pattern structure of nano-size in the semiconductor industry. In this paper, a series of lapping and polishing technique is shown for the rough and deflected copper substrate of thickness 3mm. Lapping by sand papers tried air cooling method. And two steps of polishing used the diamond abrasives and the $Al_2O_3$ slurry of size 100mm considering the residual scratch. White-light interferometer proved successfully a mirror-like surface roughness of Ra 6nm on the area of $0.56mm{\times}0.42mm$.

Effects of Elastic Energy of Thin Films on Bending of a Cantilevered Magnetostrictive Film- Substrate System

  • Si, Ho-Mun;Chongdu Cho;Kim, Chang-Boo
    • Journal of Mechanical Science and Technology
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    • v.18 no.4
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    • pp.622-629
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    • 2004
  • In this paper, effects of elastic energy of magnetostrictive film on the deflection of a cantilevered film-substrate system are investigated. The total energy including the elastic energy of magnetostrictive film is formulated. And it is minimized to give the curvatures and the position of neutral axis of the cantilevered system. To discuss the effects of the elastic energy of film in a measured system, three magnetostrictive unimorph cantilevers and a bimorph cantilever reported elsewhere are reviewed. It is shown that the assumption, since the thickness of film is much smaller than that of substrate the film elastic energy is negligible, can cause considerable error in evaluating magnetostrictive coefficients. Not the ratio of thicknesses but elastic energies between film and substrate is also shown to play important role in making decision whether the assumption is valid or not.

The Natural Cooling Effects of Pre-heated Substrate during RF Magnetron Sputter Deposition of ZnO (ZnO 박막의 RF 마그네트론 스퍼터 증착 중 미리 가열된 기판의 자연냉각 효과)

  • Park, Sung-Hyun;Lee, Neung-Hun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.5
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    • pp.905-909
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    • 2007
  • Crystalline and micro-structural characteristics of ZnO thin films which were deposited on p-Si(100) with cooling naturally down of pre-heated substrate during RF magnetron sputter deposition, were investigated by XRD and SEM in this paper. The film which was prepared on the substrate which was pre-heated to $400^{\circ}C$ before deposition and then cooled naturally down during deposition, showed the most outstanding c-axis preferred orientation. The ZnO thin film having the best crystalline result were applied to SMR type FBAR device and resonance properties of the device were investigated by network analyzer. It showed that resonance frequency was 2.05 GHz, return loss was -30.64 dB, quality factor was 3169 and electromechanical coupling factor was 0.4 %. This deposition method would be very useful for application of surface acoustic wave filter or film bulk acoustic wave resonator.

Electrical properties of AZO transparent conductive oxide with substrate bias and $H_2$ annealing (기판바이어스와 수소열처리에 의한 AZO 투명전도막의 전기적 특성)

  • Jeong, Yun-Hwan;An, Jeong-Geun;Choi, Dai-Seub;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.331-331
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    • 2008
  • Transparent conductive oxide (TCO) are necessary as front electrode or anti-reflecting coating for increasing efficiency of LED and Photodiode. In this paper, aluminum-doped Zinc oxide films(AZO) were prepared by RF magnetron sputtering on Si substrate at room temperature with application of substrate bias from -60 to 60 V. Then annealed at temperature of 200, 300 and $400^{\circ}C$ for 1hr in $H_2$ ambient. Structural and electrical property of AZO thin films were investigated.

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Influence of microstructure, heterogeneity and internal friction on SH waves propagation in a viscoelastic layer overlying a couple stress substrate

  • Sharma, Vikas;Kumar, Satish
    • Structural Engineering and Mechanics
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    • v.57 no.4
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    • pp.703-716
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    • 2016
  • In this paper, we have investigated shear horizontal wave propagation in a layered structure, consisting of granular macromorphic rock (Dionysos Marble) substrate underlying a viscoelastic layer of finite thickness. SH waves characteristics are affected by the material properties of both substrate and the coating. The effects of microstructural parameter "characteristic length" of the substrate, along with heterogeneity, internal friction and thickness of viscoelastic layer are studied on the dispersion curves. Dispersion equation for SH wave is derived. Real and damping phase velocities of SH waves are studied against dimensionless wave number, for different combinations of various parameters involved in the problem.

Effect of surface toughness on the interfacial adhesion energy between glass wafer and UV curable polymer for different surface roughness (표면거칠기에 따른 글래스 웨이퍼와 UV 경화 폴리머사이의 계면접착 에너지 평가)

  • Jang, Eun-Jung;Hyun, Seoung-Min;Choi, Dae-Geun;Lee, Hak-Joo;Park, Young-Bae
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.40-44
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    • 2008
  • The interfacial adhesion energy between resist and a substrate is very important due to resist pull-off problems during separation of mold from a substrate in nanoimprint process. And effect of substrate surface roughness on interfacial adhesion energy is very important. In this paper, we have treated glass wafer surface using $CF_4$ gas for increase surface roughness and it has tested interfacial adhesion properties of UV resin/glass substrate interfaces by 4 point bending test. The interfacial adhesion energies by bare, 30, 60 and 90 sec surface treatments are 0.62, 1.4, 1.36 and 2 $J/m^2$, respectively. The test results showed quantitative comparisons of interfacial fracture energy (G) effect of glass wafer surface roughness.

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A New Planar Spiral Inductor with Multi-layered Bragg Reflector for Si-Based RFIC's

  • Mai Linh;Lee Jae-Young;Le Minh-Tuan;Pham Van-Su;Yoon Gi-Wan
    • Journal of information and communication convergence engineering
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    • v.4 no.2
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    • pp.88-91
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    • 2006
  • In this paper, a novel physical structure for planar spiral inductors is proposed. The spiral inductors were designed and fabricated on multi-layered substrate Bragg-reflector/silicon (BR/Si) wafer. The impacts of multi-layered structure substrate and pattern on characteristics of inductor were studied. Experimental results show that the inductor embedded on Bragg reflector/silicon substrate can achieve the best improvement. At 0.4-1.6 GHz, the Bragg reflector seems to significantly increase the S11-parameter of the inductor.

Thermal Effect Modeling for AIGaN/GaN HFET on Various Substrate (AlGaN/GaN HFET의 기판에 따른 열효과 분석 모델링)

  • Park, Seung-Wook;Shin, Moo-Whan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.221-225
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    • 2001
  • In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate

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