• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.3
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• pp.29-34
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• 2021

For the purpose of Application to the small radar sensor, the MMIC Chips, which are the core component of the W-band, was designed in Korea according to the characteristics of the transceiver and manufactured by 60nm GaN and 0.1㎛ GaAs pHEMT process. The output power of PA is 28 dBm at center frequency of W-band and Noise figure is 6.7 dB of switch and LNA MMIC. Output power and Noise figure of MMIC chips developed in domestic was applied to the transmitter and receiver module through W-band waveguide low loss transition structure design and impedance matching to verify the performance after the fabrication are 26.1~27.7 dBm and 7.85~10.57 dB including thermal testing, and which are close to the analysis result. As a result, these are judged that the PA and Switch and LNA MMICs can be applied to the small radar sensor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.3 s.106
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• pp.239-248
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• 2006

In this paper, the cryogenically cooled low noise amplifier module for radio telescope receiver front-end using pHE-MT MMIC is designed and fabricated. In the selection of MMIC, the MMIC fabricated with the pHEMTS providing successful cryogenic operation are chosen. They are mounted in the housing using the thin film substrate. In the design of the housing, the absorber and the elimination of the gap between the carrier and the housing as well removed the unnecessary oscillations by its structure. The mismatch is improved by ribbon-tuning to provide the best performance at room temperature. The fabricated module shows the gain of $35dB{\pm}1dB$ and the noise figure of $2.37{\sim}2.57dB$ at room temperature over $21.5{\sim}23.5GHz$. In the cryogenic temperature of $15^{\circ}K$ cooled by He gas, the measured gain was above 35 dB and flatness ${\pm}2dB$ and the noise temperatures of $28{\sim}37^{\circ}K$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.5C
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• pp.522-529
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• 2002

MMIC circuits in whole receiver system was fabricated based on GaAs pHEMT technology. And a V-band downconverter module was fabricated by integrating these circuits. The downconverter module consists of a LO drive power amplifier which generates 24dBm output power, a low noise amplifier(LNA) which shows 20 dB small signal gain, an active parallel feedback oscillator which generates 1.6 dBm output power, and a cascode mixer which shows over 6dB conversion gain. The good conversion gain performance of our mixer made no need to attach any IF amplifier which grows conversion gain. Measured results of the complete downconverter show a conversion gain of over 20 dB between 57.5 GHz and 61.7GHz without IF amplifier.