• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.209.1-209.1
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• 2015

Indium gallium zinc oxide (IGZO), indium zinc oxide (IZO) 그리고 zinc tin oxide (ZTO) 같은 zinc oxide 기반의 산화물 반도체는 높은 이동도, 투과도 그리고 유연성 같은 장점을 갖고 있어, display application의 backplane 소자로 적용되고 있다. 또한 최근에는 산화물 반도체를 이용한 thin-film transistor (TFT) 뿐만아니라 resistive random access memory (RRAM), flash memory 그리고 pH 센서 등 다양한 반도체 소자에 적용을 위한 연구가 활발히 진행 중이다. 그러나 zinc oxide 기반의 산화물 반도체의 전기 화학적 불안정성은 위와 같은 소자에 적용하는데 제약이 있다. 산화물 반도체의 안정성에 영향을 미치는 다양한 요인들 중 한 가지는, sputter 같은 plasma를 이용한 공정 진행 시 active layer가 plasma에 노출되면서 threshold voltage (Vth)가 급격하게 변화하는 plasma damage effect 이다. 급격한 Vth의 변화는 동작 전압의 불안정성을 가져옴과 동시에 누설전류를 증가시키는 결과를 초래 한다. 따라서 본 연구에서는, IGZO 기반의 TFT를 제작 후 plasma 분위기에 노출시켜, power와 노출 시간에 따른 전기적 특성 변화를 확인 하였다. 또한, thermal annealing을 적용하여 열처리 온도와 시간에 따른 Vth의 회복특성을 조사 하였다. 이러한 결과는 추후 산화물 반도체를 이용한 다양한 소자 설계 시 유용할 것으로 기대된다.

• The Korean Journal of Pharmacology
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• v.5 no.2
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• pp.87-92
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• 1969

The effects of dephenylhydantoin, strychnine, coramine, d-amphetamine and chlorpromazine on $QO_2$ and non-inulin space $Na^+$, $K^+$ concentration of rat cerebral cortical slices incubated in pH 7.4 glycylglycine glucose saline was investigated. In general, there are decreased non-inulin space $Na^+$ concentration or increased non-inulin space $K^+$ concentration or both when the ratio of respiration to non-inulin space is greater than control group except in case of chlorpromazine $10^{-4}\;M$. And it is suggested that the ratio of respiration to non-inulin space is responsible more closely for the non-inulin space Na, K concentration than $QO_2$ expressed per tissue wet weight. Effects of diphenylhydantoin and several other agents on electrolytes and the electroshock seizure threshold are discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.785-789
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• 2013

Silicon Carbide (SiC) is the material with the wide band-gap (3.26 eV), high critical electric field (~2.3 MV/cm), and high bulk electron mobility (~900 $cm^2/Vs$). These electronic properties allow attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. In general, device design has a significant effect on the switching and electrical characteristics. It is known that in this paper, we demonstrated that the switching performance and breakdown voltage of IGBT is dependent with doping concentration of p-base region and drift layer by using 2-D simulations. As a result, electrical characteristics of SiC-IGBT deivce is higher breakdown voltage ($V_B$= 1,600 V), lower on-resistance ($R_{on}$= 0.43 $m{\Omega}{\cdot}cm^2$) than Si-IGBT. Also, we determined that processing time and cost is reduced by the depth of n-drift region of IGBT was reduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.151-151
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• 2010

In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of $650^{\circ}C$ for 5 hours on glass substrates. The LTPS thin film transistor (TFT) or the NVM obtains a field effect mobility of ($\mu_{FE}$) $10\;cm^2/V{\cdot}s$, threshold voltage ($V_{TH}$) of -3.5V. The results demonstrated that the NVM has a memory window of 1.6 V with a programming and erasing (P/E) voltage of -14 V and 14 V in 1 ms. Moreover, retention properties of the memory was determined exceed 80% after 10 years. Therefore, the LTPS fabricated by the MIC became a potential material for NVM application which employed for the system integration of the panel display.

• Journal of agriculture & life science
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• v.45 no.2
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• pp.85-92
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• 2011

The current study was conducted to investigate effects of sera taken from Hanwoo at different age on adipocyte differentiation. Sera were taken from Korean native (Hanwoo) steers at 6, 12, 18, and 24 months of age, respectively and supplemented to 3T3-L1 preadipocytes after the cells reached confluence and maintained 10 days thereafter. For the first 2 days (48 h), cells were induced to differentiate by addition of differentiation factors, methylisobutylxanthine, daxamethasone, and insulin. After the differentiation, the cells were incubated without differentiation factors except insulin. The cells lost their fibroblastic shape and showed round-up appearances after 10 days incubation with FBS and the sera of Hanwoo steers. Big lipid droplets appeared in the cells cultured with FBS and the sera taken from Hanwoo at 18 and 24 months of age. After 18 months of age, GPDH activity was statistically higher than 6 and/or 12 months of age (P < 0.05). Based on morphology and Sn-glycerol-3-phosphate dehydrogenase activities, Hanwoo steers expressed aged-dependent adipogenic activities, indicating that aged sera may result in high adipocyte differentiation. It is concluded that the 18 months of age may be 'threshold' to express major adipogenic activities. This may strongly support previous field studies reporting considerable increase in fat contents of Hanwoo carcass at over 18 months of age.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.106-117
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• 1998

Fluorocarbonated-SiO2 films were deposited on p-type Si(100) substrate using FSi$(OC_2H_5)_3$ (FTES), and $O_2$ mixture gases by a helicon plasms source. High density $O_2$/FTES/Ar plasma of ~$10^{12} \textrm{cm}^{-3}$ is obtained at low pressure (<3mTorr) with RF power above 900 W in the helicon plasma source. Optical emission spectroscopy (OES) is used to study the relation between the relative densities of the radicals and the film properties. The FTES and $O_2$ gases are greatly dissociated at the helicon mode that is launched at the above threshold plasma density. FTIR and XPS spectra shows that the film has Si-F, and C-F bonds during the formation process of the film which may lower the dielectric constant greatly. The relative dielectric constant, leakage current density, and dielectric breakdown voltage are about 2.8, $8\times10^{-9}\textrm{A/cm}^2$, and > 12 MV/cm, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.435-441
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• 2008

In this paper, we investigated the electrical properties of triisopropylsilyl (TIPS) pentacene organic thin-film transistor (OTFT) depending on solvent type. We spin coated TIPS pentacene by using chlorobenzene, p-xylene, chloroform, and toluene as solvents. Fabricated OTFT with chlorobenzene shows field-effect mobility of $1.0{\times}10^{-2}cm^2/V{\cdot}s$, on/off ratio of $4.3{\times}10^3$ and threshold voltage of 5.5 V. In contrast, with chloroform, the mobility is $5.8{\times}10^{-7}cm^2/V{\cdot}s$, on/off ratio of $1.1{\times}10^2$ and threshold voltage of 1.7 V. Moreover we measured the grain size of each TIPS pentacene solvent by atomic force microscopy (AFM). From these results, it can be concluded that a solvent with higher boiling point results in better electrical characteristics due to large grain size and high crystallinity of TIPS pentacene layer. In this paper TIPS pentacene with chlorobenzene shows the best electrical properties.

• Korean Journal of Food Science and Technology
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• v.9 no.2
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• pp.123-130
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• 1977

A laboratory study was made to develop a simple and economic model method for the systematic determination of functional properties of 'Soy Protein Isolates (SPI)' prepared from defatted soybean meal. These are required to evaluate and to predict how SPI may behave in specific systems and such proteins can be used to simulate or replace conventional proteins. Data concerning the effects of pH, salt concentration, temperature, and protein concentration on the functional properties which include solubility, heat denaturation, gel forming capacity, emulsifying capacity, and foaming capacity are presented. The results are as follows: 1) The yield of SPI from defatted soybean meal increased to 83.9 % as the soybean meal was extracted with 0.02 N NaOH. 2) The suitable viscocity of a dope solution for spinning fiber was found to be 60 Poises by using syringe needle (0.3 mm) with 15 % SPI in 0.6 % NaOH. 3) Heat caused thickening and gelation in concentration of 8 % with a temperature threshold of $70^{\circ}C$. At $8{\sim}12\;%$ protein concentration, gel was formed within $10{\sim}30\;min$ at $70{\sim}100\;^{\circ}C$. It was, however, disrupted rapidly at $125\;^{\circ}C$ of overheat treatment. The gel was firm, resilient and self-supporting at protein concentration of 14 % and less susceptible to disruption of overheating. 4) The emulsifying capacity (EC) of SPI was correlated positively to the solubility of protein at ${\mu}=0$. At pH of the isoelectric point of SPI (pH 4.6), EC increased as concentration of sodium chloride increased. Using model system$(mixing\;speed:\;12,000\;r.p.m.,\;oil\;addition\;rate:\;0.9\;ml/sec,\;and\;temperature\;:\;20{\pm}1\;^{\circ}C)$, the maximum EC of SPI was found to be 47.2 ml of oil/100 mg protein, at the condition of pH 8.7 and ${\mu}=0.6$. The milk casein had greater EC than SPI at lower ionic strength while the EC of SPI was the same as milk casein at higher ionic strength. 5) The shaking test was used in determining the foam-ability of proteins. Progressively increasing SPI concentration up to 5 % indicated that the maximum protein concentration for foaming capacity was 2 %. Sucrose reduced foam expansion slightly but enhanced foam stability. The results of comparing milk casein and egg albumin were that foaming properties of SPI were the same as egg albumin, and better than milk casein, particularly in foam stability.