• Title/Summary/Keyword: pH sensor film

Search Result 58, Processing Time 0.029 seconds

A Fluorescent Sensor Film for Detecting pH of Acidic Solutions (산성 용액의 pH를 감지할 수 있는 형광 센서막)

  • Min, Jae Young;Kim, Hyung Jin
    • Journal of the Korean Chemical Society
    • /
    • v.64 no.2
    • /
    • pp.74-78
    • /
    • 2020
  • A push-pull conjugated dye (DCMP) was covalently immobilized on a silanized glass surface to produce a high sensitivity pH sensor film for operating in the acidic region. A pH-sensitive sensor film was prepared by photo-initiating copolymerization of a modified DCMP (DCMA), 2-hydroxyethyl methacrylate (HEMA) and triethylene glycol dimethacrylate on the silanized glass surface. The absorbance of the sensor film increased with increasing pH between pH 2.0 and 5.0, and the fluorescence intensity of the film also increased about 50 times with increasing pH in the same pH range. The sensor film was reversible and reproducible under acidic conditions. The sensor film showed a relatively short response time between 20-50 seconds and high selectivity for proton in the presence of various metal ions.

Study on Optical Characteristics of pH Indicators in the Immobilized Film for Fiber-Optic pH Sensor (광학적 pH 센서를 위한 지시염료가 고정된 필름의 광학적 특성 연구)

  • Kim, Beom Kyu;Park, Byung Gi
    • Journal of Sensor Science and Technology
    • /
    • v.26 no.6
    • /
    • pp.414-419
    • /
    • 2017
  • The optical characteristics of cresol red, phenol red, and neutral red immobilized in the thin film were investigated with absorbance measurement in order to find a sensing part of a fiber-optic pH sensor. Sol-Gel method with tetramethyl orthosilicate as a precursor was used to immobilize the pH indicators in the thin film. The absorbance spectra were measured when pH indicators were immobilized in the film and were dissolved in the buffer solution. Experimental results showed that the absorbance spectra could be changed when the pH indicator is immobilized in the thin film. As compared with other pH indicators, the neutral red exhibited similar absorbance spectra regardless of physical conditions and was sensitive over whole pH range between 4 and 11. In addition, the absorbance ratio of base peak to acid peak tended to increase in proportion to the increase in pH. Experimental results indicate that the neutral red is a good pH indicator for fabrication of a sensing part of the fiber-optic pH sensor.

High-Sensitive Fiber-Optic pH Sensor Using Neutral Red Immobilized in Porous Sol-Gel Film (뉴트럴레드가 고정화된 다공성 졸-겔 필름을 이용한 고감도 광섬유 pH 센서의 특성)

  • Jeon, Da-Yeong;Yoo, Wook-Jae;Shin, Sang-Hun;Han, Ki-Tek;Park, Jang-Yeon;Park, Byung-Gi;Cho, Seung-Hyun;Lee, Bong-Soo
    • Journal of Sensor Science and Technology
    • /
    • v.21 no.3
    • /
    • pp.223-228
    • /
    • 2012
  • In this study, a fiber-optic pH sensor based on a pH sol-gel film is fabricated. The sol-gel film is made by co-polymerizing tetramethoxysilane, trimethoxymethylsilane, ethanol and distilled water. As a pH indicator, a neutral red is immobilized in a thin porous film formed by the sol-gel process. The pH change in a sensing probe gives rise to a change in the color of the pH sol-gel film, and the absorbance of reflected light through the pH sol-gel film is also changed. By using a spectrometer, therefore, the spectra of reflected lights in the sensing probe with different pH values are measured. Also, the relationships between the pH values and the absorbance are analyzed on the basis of the color variations of the pH sol-gel films. In repeated experiments, the fiber-optic pH sensor shows that it has reversibility, a high reproducibility and a wide absorbance change in a pH range from pH 5 to 9. Also, we confirmed that the fabricated pH sol-gel film exhibits a fast response time, little or no pH indicator leaching and a dynamic range of 2.04 dB from pH 5 to 9. Based on the results of this study, a fiber-optic pH sensor can be developed for the pH monitoring in the harsh environments.

pH Sensor Application of Printed Indium-Tin-Oxide Nanoparticle Films (Indium-Tin-Oxide 나노입자 인쇄박막의 pH sensor 응용에 대한 연구)

  • Lee, Changhan;Noh, Jaeha;An, Sangsu;Lee, Sangtae;Seo, Dongmin;Lee, Moonjin;Chang, Jiho
    • Journal of Sensor Science and Technology
    • /
    • v.31 no.2
    • /
    • pp.85-89
    • /
    • 2022
  • We investigated a pH sensor using an Indium tin oxide (ITO) nanoparticle (NP) film printed on a flexible substrate. First, the printing precision and mechanical stability of the ITO-printed film were investigated. In particular, the factors that influence the crystallinity of ITO films were studied using X-ray diffraction pattern analysis. The response of the ITO pH sensor was calibrated using a series of standard pH solutions (pH 3-11). The pH values of various specimens were measured using an ITO pH sensor, and the results were compared with those of various pH measurement methods. As a result of the experiment, the maximum error was approximately ± 0.04 pH (0.4 %) at pH 9, which indicated that the ITO pH sensor is highly suitable for pH measurement. Finally, we used the ITO pH sensor to the measure of general specimens such as solvents and beverages and compared the results in comparison with those obtained from several conventional methods.

CO Gas Sensing Characteristic of ZnO Thin Film/Nanowire Based on p-type 4H-SiC Substrate at 300℃ (P형 4H-SiC 기판에 형성된 ZnO 박막/나노선 가스 센서의 300℃에서 CO 가스 감지 특성)

  • Kim, Ik-Ju;Oh, Byung-Hoon;Lee, Jung-Ho;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.25 no.2
    • /
    • pp.91-95
    • /
    • 2012
  • ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

Development of Reflection-type Fiber-optic pH Sensor Using Sol-gel Film (졸-겔 필름을 이용한 반사형 광섬유 pH 센서의 개발)

  • Yoo, Wook-Jae;Seo, Jeong-Ki;Jang, Kyoung-Won;Moon, Jin-Soo;Han, Ki-Tek;Park, Jang-Yeon;Lee, Bong-Soo;Cho, Seung-Hyun;Heo, Ji-Yeon;Park, Byung-Gi
    • Journal of Sensor Science and Technology
    • /
    • v.20 no.4
    • /
    • pp.266-271
    • /
    • 2011
  • A reflection-type fiber-optic pH sensor, which is composed of a pH sol-gel film, plastic optical fibers, a mirror, a light source and a spectrometer, is developed in this study. As pH indicators, a bromthymol blue, a cresol red and a thymol blue are used, and they are immobilized in the sol-gel films. The emitted light from a light source is guided by a fiber-optic Y-coupler and plastic optical fibers to the pH sol-gel film in a pH sensing probe. The pH change in the sensing probe gives rise to a change in the color of the pH sol-gel film, and the optical characteristic of reflected light through the pH sol-gel film is also changed. Therefore, we have measured the spectra of reflected lights, which are changed according to the color variations of the pH sol-gel films with different pH values, by using of a spectrometer. Also, the relationships between the pH values and the intensities of reflected lights are obtained on the basis of the color variations of the pH sol-gel films.

A pH Optosensor Based on Fluoresence from Nile Blue Encapsulated within Silica Sol-Gel Film (실리카 졸-겔막을 이용한 pH 광학센서)

  • Lee, Jung-Min;Li, Ming;Lee, Sang-Hak;Kim, Young-Sun;Kim, Chang-Jin;Lee, Boo-Huyng
    • Journal of Sensor Science and Technology
    • /
    • v.13 no.3
    • /
    • pp.169-174
    • /
    • 2004
  • A fiber optic pH sensor has been fabricated using nile blue entrapped in an ammonia catalyzed silica sol-gel film coated on glass substrate by dip-coating. The sensor was fixed on the end of an optical fiber. The sensor showed pH sensitivity when dipped into liquids at different pHs. Linear and reproducible responses were obtained in standard buffer solutions in the pH range $6.0{\sim}8.5$, which encompasses the clinically-relevant range. The effects of interferences on the determination of pH were also investigated. The sensors were successfully applied to the determination of pH in different commercial ionic drinks.

Preparation of Flexible 3D Porous Polyaniline Film for High-Performance Electrochemical pH Sensor (고성능 전기 화학 pH 센서를 위한 유연한 3차원 다공성 폴리아닐린 필름 제조)

  • Park, Hong Jun;Park, Seung Hwa;Kim, Ho Jun;Lee, Kyoung G.;Choi, Bong Gill
    • Applied Chemistry for Engineering
    • /
    • v.31 no.5
    • /
    • pp.539-544
    • /
    • 2020
  • A three-dimensional (3D) porous polyaniline (PANI) film was fabricated by a combined photo-and soft-lithography technique based on a large-area nanopillar array, followed by a controlled chemical dilute polymerization. The as-obtained 3D PANI film consisted of hierarchically interconnected PANI nanofibers, resulting in a 3D hierarchical nanoweb film with a large surface and open porous structure. Using electrochemical measurements, the resulting 3D PANI film was demonstrated as a flexible pH sensor electrode, exhibiting a high sensitivity of 60.3 mV/pH, which is close to the ideal Nernstian behavior. In addition, the 3D PANI electrode showed a fast response time of 10 s, good repeatability, and good selectivity. When the 3D PANI electrode was measured under a mechanically bent state, the electrode exhibited a high sensitivity of 60.4 mV/pH, demonstrating flexible pH sensor performance.

NH3 Sensing Properties of SnO Thin Film Deposited by RF Magnetron Sputtering

  • Vu, Xuan Hien;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.272-272
    • /
    • 2014
  • SnO thin films, 100 nm in thickness, were deposited on glass substrates by RF magnetron sputtering. A stack structure of $SnO_2/SnO$, where few nanometers of $SnO_2$ were determined on the SnO thin film by X-ray photoelectron spectroscopy. In addition, XPS depth profile analysis of the pristine and heat treated thin films were introduced. The electrical behavior of the as-sputtered films during the annealing was recorded to investigate the working conditions for the SnO sensor. Subsequently, The NH3 sensing properties of the SnO sensor at operating temperature of $50-200^{\circ}C$ were examined, in which the p-type semiconducting sensing properties of the thin film were noted. The sensor shows good sensitivity and repeatability to $NH_3$ vapor. The sensor properties toward several gases like $H_2S$, $CH_4$ and $C_3H_8$ were also introduced. Finally, a sensing mechanism was proposed and discussed.

  • PDF

Characteristics of a-Si:H Multilayer for Contact-type Linear Image Sensor (밀착형 1차원 영상감지소자를 위한 a-Si:H 다층막의 특성)

  • Oh, Sang-Kwang;Kim, Ki-Wan;Choi, Kyu-Man
    • Journal of Sensor Science and Technology
    • /
    • v.1 no.1
    • /
    • pp.5-12
    • /
    • 1992
  • We have fabricated a-Si:H multilayer for contact-type linear image sensor by means of RF glow discharge decomposition method. The ITO/i-a-Si:H/Al structure has relatively high dark current due to indium diffusion and carrier injection from both electrodes, resulting in low photocurrent to dark current. To suppress the dark current and to enhance interface electric field between ITO and i-a-Si:H film we have fabricated ITO/insulator/i-a-S:H/p-a-S:H/Al multilayer film with blocking structure. The photocurrent of ITO/$SiO_{2}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al multilayer sensor with 5V bias voltage became saturated at about 20nA under $20{\mu}W/cm^{2}$ light intensity, while the dark current was less than 0.1nA. To increase the light generation efficiency we have adopted ITO/$SiO_{x}N_{y}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al structure, showing photocurrent of 30nA and dark current of 0.08nA with 5V bias voltage. Also the spectral photosensitivity of the multilayer was enhanced for short wavelength visible region of 560nm, compared with that of the a-Si:H monolayer of 630nm. And its photoresponse time was about 0.3msec with the film homogeneity of 5% deviation.

  • PDF