• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.1
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• pp.30-39
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• 1991

The influence of physical parameters (Al mole fraction, thickness, doping concentration) in the window and emitter on the efficiency characteristics of heteroface p-$Al_{x}Ga_{1-x}As/p-GaAs/n-GaAs/n^{+}$-GaAs solar cell is investigated. The maximum efficiency theoretically calculated in this device is obtained when a thickness of the window is in a range of (400-1000))$\AA$and a thickness/doping concentration of the emitter is in a range of (0.5-0.8)$\mu$m/(1-7)${\times}10^{17}cm^{-3}$, respectively. Also is the efficiency improved according to the increase of Al mole fraction in the indirect gap window(0.41${\le}x{\le}1.0$). The optimum designed heteroface cell with an area of 0.165cm$^2$fabricated using MOCVD exhibits an active area conversion efficiency of 17%, having a short circuit current density of 21.2mA/cm\ulcorner an open circuit voltage of 0.94V, and a fill factor of 0.75 under ELH-100mW/cm$^2$illumination.

• Korean Journal of Optics and Photonics
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• v.3 no.4
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• pp.252-257
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• 1992

In this study, InGaAsP/InP MQW-DH wafer was grown by a vertical type LPE system and 10$\mu$m stripe MQW-LD was fabricated with the wafer. The threshold current was about 200 mA and when the cavity length of the LD was 470$\mu$m the central wavelenth of gain spectra was 1.32$\mu$m the lasing wavelength was 1.302$\mu$m which corresponded to the gain center of the quantum well thickness of 300 $\AA$.

• Journal of Environmental Health Sciences
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• v.20 no.4
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• pp.72-79
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• 1994

This study was performed to improve many problems of leaching test of industrial waste sludge analysis. We analyze sludges by variation of leachant, pH and leaching time.The results were as follows: 1. As leaching at pH 5.8 by our leaching test without control of pH during leaching, the leaching rates were very low as below 1%. 2. As leaching at pH 5.8 continuously by hydrochloric acid every 2 hour, the leaching rates were higher than before 1. 3. As leaching at pH 5.0 continuously by acetic acid every 2 hour, the leaching rates were higher than 1, 2. 4. The variations of leaching rate by leaching time were smaller increase after 10 hours than before. 5. It will be recommendable that the pH of leachant maintain constantly during leaching as level of acid rain, and the acetic acid is more effective than hydrochloric acid as leachant.

• Bulletin of the Korean Mathematical Society
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• v.47 no.1
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• pp.211-219
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• 2010

Let P be a Jacobian polynomial such as deg P = $deg_y$ P. Suppose the Jacobian polynomial P satisfies the intersection condition satisfying $dim_C$ C[x, y]/$P_y$> = deg P - 1, we can prove that the Keller map which has P as one of coordinate polynomial always has its inverse.

• Korean Journal of Soil Science and Fertilizer
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• v.39 no.3
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• pp.157-162
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• 2006

Objective of this research was to evaluate optimal conditions of arsenic adsorption in water by zero-valent iron (ZVI). Batch experiment showed that adsorption of arsenic by ZVI followed a Langmuir isotherm model. The masses of As(V) adsorbed onto ZVI were increased as decreasing pH of the reacting solution (pH 3: 2.05, pH 5: 1.82, pH 7: 1.24, pH 9: 1.03 mg As/g $Fe^0$) and as increasing the temperature ($15^{\circ}C$ : 1.59, $25^{\circ}C$ : 1.81, 35 : $1.93^{\circ}C$ mg As/g $Fe^0$). The SEM and EDS (energy dispersive X-ray spectrometer) analysis of morphology and structure of ZVI before and after reacting with arsenic in water revealed that a relatively smooth and large surface of ZVI was transformed into a coarse and small surface particle after the reaction. The EDS spectra on the chemical composition of ZVI demonstrated that arsenic was incorporated into ZVI by adsorption mechanism. The XRD analysis also identified that the only peak for $Fe^0$ in the ZVI before the reaction and confirmed that $Fe^0$ was transformed into $Fe_2O_3$ and FeOOH, and As into $FeAsO_4{\cdot}2H_2O$.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.10-11
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• 2000

광통신을 이용한 근거리 전송과 장거리 전송에서 1.3 및 1.55 $mu extrm{m}$ 파장 영역의 빛이 사용되고 있다. 향후, 각 가정마다 광선로를 연결하는 Fiber-to-the-home (FTTH)의 개념과 광CATV가 발전함에 따라 1.3 및 1.55 $\mu\textrm{m}$ 빛을 검출하는 소자와 송신하는 소자가 필요하게 된다. 본 논문에서는 이러한 다중파장을 검출할 수 있는 집적소자를 제작 및 측정하였다. 본 논문에서 사용된 epitaxial layer의 구조는 N-InP 기판 위에 1 $\mu\textrm{m}$의 n-InP buffer층, 5층의InGaAs/InGaAsP 다중양자우물과 0.2 $\mu\textrm{m}$ InGaAsP separate confinement heterostructure (SCH) 층, 0.5$\mu\textrm{m}$ InP clad층과 0.1 $\mu\textrm{m}$ InGaAs cap 층으로 구성되어있다. 모든 epi 층은 InP 기판에 격자 정합이 되어있다. 다중양자우물구조는 84 $\AA$의 InGaAs 우물층과 100 $\AA$의 InGaAsP 장벽층으로 구성되며, 상온에서 0.787 eV (1.575 $\mu\textrm{m}$)의 bandgap energy를 갖도록 설계하였다. (중략)

• Journal of applied mathematics & informatics
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• v.30 no.5_6
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• pp.793-807
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• 2012

If G is any connected graph of order p; then the thorn graph $G_p^*$ with code ($n_1$, $n_2$, ${\cdots}$, $n_p$) is obtained by adding $n_i$ pendent vertices to each $i^{th}$ vertex of G. By treating the pendent edge of a thorn graph as $P_2$, $K_2$, $K_{1,1}$, $K_1{\circ}K_1$ or $P_1{\circ}K_1$, we generalize a thorn graph by replacing $P_2$ by $P_m$, $K_2$ by $K_m$, $K_{1,1}$ by $K_{m,n}$, $K_1{\circ}K_1$ by $K_m{\circ}K_1$ and $P_1{\circ}K_1$ by $P_m{\circ}K_1$ and their respective generalized thorn graphs are denoted by $G_P$, $G_K$, $G_B$, $G_{KK}$ and $G_{PK}$ respectively. Many chemical compounds can be treated as $G_P$, $G_K$, $G_B$, $G_{KK}$ and $G_{PK}$ of some graphs in graph theory. In this paper, we obtain the bounds of the wiener index for these generalization of thorn graphs.

• Journal of the Korean Institute of Navigation
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• v.14 no.2
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• pp.77-82
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• 1990

In this paper the results for thin multi-layer InGaAsP($1.3{\mu}m$)/InP crystal growth by vertical liquid epitaxial growing furnance have been presented. The growth rates of InGaAsP layer and InP layer at cooling rate of $0.3^{\circ}C$/min and the growing temperature of $630^{\circ}C$ were obtained as $0.11 {\mu}m$/min and $0.06 {\mu}m$/min, respectively, by the uniform cooling with two phase solution technique.

• Korean Journal of Optics and Photonics
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• v.12 no.1
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• pp.40-47
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• 2001

The structural dependence of the performance of an 1.55 $1.55{\mu}m$ InGaAsPIInGaAsP MQW electro-absorption modulator for highspeed digital fiber communication was systematically investigated. The effects of n-doped SCH region length $t_n$ as well as the general structure parameters including quantum well number $N_w$, well-thickness $t_w$, detuning wavelength $\Delta\lambda$, and device length L were thoroughly analyzed. Thereby, a high-pelfoIDlance electro-absorption modulator with device length L of $100{\mu}m$ was successfully designed. The designed structure showed excellent characteristics that have residual loss less than -1.5 dB, operational voltage from 0 V to -2V, and extinction ratios of -2.92 dB at $V_{\alpha}$=-1 V and -10 dB at $V_{\alpha}$=-2V.X>=-2V.

• Journal of Microbiology and Biotechnology
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• v.28 no.2
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• pp.330-337
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• 2018

Polycyclic aromatic hydrocarbons (PAHs), including naphthalene, are widely distributed in nature. Naphthalene has been regarded as a model PAH compound for investigating the mechanisms of bacterial PAH biodegradation. Pseudomonas sp. AS1 isolated from an arseniccontaminated site is capable of growing on various aromatic compounds such as naphthalene, salicylate, and catechol, but not on gentisate. The genome of strain AS1 consists of a 6,126,864 bp circular chromosome and the 81,841 bp circular plasmid pAS1. Pseudomonas sp. AS1 has multiple dioxygenases and related enzymes involved in the degradation of aromatic compounds, which might contribute to the metabolic versatility of this isolate. The pAS1 plasmid exhibits extremely high similarity in size and sequences to the well-known naphthalene-degrading plasmid pDTG1 in Pseudomonas putida strain NCIB 9816-4. Two gene clusters involved in the naphthalene degradation pathway were identified on pAS1. The expression of several nah genes on the plasmid was upregulated by more than 2-fold when naphthalene was used as a sole carbon source. Strains have been isolated at different times and places with different characteristics, but similar genes involved in the degradation of aromatic compounds have been identified on their plasmids, which suggests that the transmissibility of the plasmids might play an important role in the adaptation of the microorganisms to mineralize the compounds.