• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.336-340
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• 2012

Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (η). The cells with buffer layer show higher open circuit voltage (Voc), fill factor (FF), short circuit current density (Jsc) and improved blue response with respect to the cell without buffer layer.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.789-792
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• 2003

pMOSFET having 10 ${\mu}um$ thickness Gd layer has been tested to be used as a slow neutron sensor. The total thermal neutron cross section for the Gd is 47,000 barns and the cross section value drops rapidly with increasing neutron energy. When slow neutrons are incident to the Gd layer, the conversion electrons are emitted by the neutron absorption process. The conversion electrons generate electron-hole pairs in the $SiO_2$ layer of the pMOSFET. The holes are easily trapped in Oxide and act as positive charge centers in the $SiO_2$ layer. Due to the induced positive charges, the threshold turn-on voltage of the pMOSFET is changed. We have found that the voltage change is proportional to the accumulated slow neutron dose, therefore the pMOSFET having a Gd nuclear reaction layer can be used for a slow neutron dosimeter. The Gd-pMOSFET were tested at HANARO neutron beam port and $^{60}CO$ irradiation facility to investigate slow neutron response and gamma response respectively. Also the pMOSFET without Gd layer were tested at same conditions to compare the characteristics to the Gd-pMOSFET. From the result, we have concluded that the Gd-pMOSFET is very sensitive to the slow neutron and can be used as a slow neutron dosimeter. It can also be used in a mixed radiation field by subtracting the voltage change value of a pMOSFET without Gd from the value of the Gd-pMOSFET.

• Clinics in Shoulder and Elbow
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• v.25 no.2
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• pp.93-100
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• 2022

Background: Subscapularis tendon insertion at the first facet has separate layers (deep and superficial). The purpose of this study is to evaluate postoperative clinical outcomes and radiological healing according to each layer of detachment in the first facet involving subscapularis tendon tear. Methods: Eighty-three patients who underwent arthroscopic repair due to First facet involving the scapularis tendon tear accompanying small to medium sized posterosuperior cuff tear were classified into three groups (group A: deep layer partial detachment, group B: deep layer complete detachment, but no superficial layer detachment, and group C: deep layer and superficial layer complete detachment). Subscapularis tendon healing was evaluated using computed tomography arthrogram and clinical result was evaluated using American Shoulder and Elbow Surgeons (ASES) shoulder score, Constant score and University of California Los Angeles (UCLA) shoulder score. Results: Retear rate of the subscapularis tendon was 2.2%, 18.2%, and 33.3% in group A, group B, and group C, respectively. These rates showed statistically significant difference among the three groups, which were classified by deep and superficial layer detachment in the first facet (p=0.003). Group A showed significant difference in subscapularis tendon healing compared with group B and group C (p=0.018 and p<0.001, respectively), but there was no statistical difference between group B and group C (p=0.292). Regarding clinical outcomes, there was no significant difference among three groups in ASES and UCLA score at final follow-up (p=0.070 and p=0.106, respectively). Conclusions: Complete detachment of deep layer may be related with retear occurrence regardless with detachment of superficial layer, but clinical outcome may not be related with each layer detachment in the first facet involving subscapularis tendon tear.

• Applied Chemistry for Engineering
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• v.34 no.2
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• pp.161-169
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• 2023

In this study, we prepared naproxen (NP) imprinted biodegradable polymer based multi-layer biomaterials using allbanggae starch (ABS), polyvinyl alcohol (PVA), and alginic acid (SA), and investigated their physicochemical properties and the controlled drug release effects. In addition, the prepared multi-layer biomaterials were characterized by FE-SEM and FT-IR. In order to confirm the controlled drug release effect for the transdermal drug delivery system (TDDS), the NP release properties of NP imprinted multi-layer biomaterials were investigated using various pH buffer solutions and artificial skin at 36.5 ℃. The results of NP release in various pH buffer solutions indicated that the NP release at high pH was about 1.3 times faster than that at low pH. In addition, NP release in multi-layer biomaterials was about 4.0 times slower than that in single-layer biomaterials. It was confirmed that the NP release rate in triple-layer biomaterials was 4.0 times slower than that in single-layer biomaterials while using artificial skin. Also, it could be found that NP in double-layer biomaterials and triple-layer biomaterials was released sustainably for 12 h. The NP release mechanism in pH buffer solutions followed the Fickian diffusion mechanism, but followed the non-Fickian diffusion mechanism with artificial skin.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.260-268
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• 2015

The thermal barrier coating (TBC) for inner wall of liquid-fuel rocket combustor consists of NiCrAlY as bonding layer and $ZrO_2$ as a top layer. In most case, the plasma spray coating is used for TBC process and this process has inherent possibility of cracking due to large difference in thermal expansion coefficients among bonding layer, top layer and metal substrate. In this paper, we suggest crack-free TBC process by using a precise electrodeposition technique. Electrodeposited Ni-P/Cr double layer has similar thermal expansion coefficient to the Cu alloy substrate resulting in superior thermal barrier performance and high temperature oxidation resistance. We studied the effects of phosphorous concentrations (2.12 wt%, 6.97 wt%, and 10.53 wt%) on the annealing behavior ($750^{\circ}C$) of Ni-P samples and Cr double layered electrodeposits. Annealing temperature was simulated by combustion test condition. Also, we conducted SEM/EDS and XRD analysis for Ni-P/Cr samples. The results showed that the band layers between Ni-P and Cr are Ni and Cr, and has no formed with heat treatment. These band layers were solid solution of Cr and Ni which is formed by interdiffusion of both alloy elements. In addition, the P was not found in it. The thickness of band layer was increased with increasing annealing time. We expected that the band layer can improve the adhesion between Cr and Ni-P.

• Polymer(Korea)
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• v.29 no.6
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• pp.593-598
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• 2005

This work studied the loading capabilities and release behaviors of poly(ethylene-alt-maleic anhydride) (PEMAh)/poly(4-vinyl pyridine) (P4VP) multilayer films formed by the layer-by-layer(LbL) sequential self-assembly method, using Rodamine 6G(R6G) as an indicator. Thickness of the multilayer, and loading and subsequent release behavior of R6G from the multilayer were studied using UV-visible spectroscopy. The amount of R6G loaded in multilayer film increased linearly with increasing film thickness. pH-Sensitive permeability was observed, where lower pH environments increased both release rate and release amount. By additional assembling of PEMAh/poly(ethyleneimine) (PEI) capping layers on top of (PEMAh/P4VP)n multilayers, the release of R6G was better controlled.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.437-438
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• 2008

박막태양전지에서 p-layer, i-layer, n-layer의 thickness와 doping concentration은 가장 기본이 되는 요소이다. 각 layer에서 위 두 가지 요소를 ASA simulator를 이용해서 높은 효율을 갖는 박막태양전지를 설계하기 위해 조절하였다. Simulation결과 p-layer의 thickness는 $9.5*10^{-9}m$, doping concentration은 0.2eV, i-layer의 thickness는 $4.535*10^{-7}m$, n-layer의 thickness는 $2*10^{-8}m$, doping concentration 은 0.1eV에서 최종 11.48%의 효율을 얻을 수 있었다. 본 연구를 통하여 높은 효율의 박막태양전지 설계 시에 도움이 될 수 있을 것이다.

• Smart Structures and Systems
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• v.4 no.5
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• pp.531-548
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• 2008

Recently, dense sensor instrumentation for structural health monitoring has motivated the need for novel passive wireless sensors that do not require a portable power source, such as batteries. Using a layer-by-layer self-assembly process, nano-structured multifunctional carbon nanotube-based thin film sensors of controlled morphology are fabricated. Through judicious selection of polyelectrolytic constituents, specific sensing transduction mechanisms can be encoded within these homogenous thin films. In this study, the thin films are specifically designed to change electrical properties to strain and pH stimulus. Validation of wireless communications is performed using traditional magnetic coil antennas of various turns for passive RFID (radio frequency identification) applications. Preliminary experimental results shown in this study have identified characteristic frequency and bandwidth changes in tandem with varying strain and pH, respectively. Finally, ongoing research is presented on the use of gold nanocolloids and carbon nanotubes during layer-by-layer assembly to fabricate highly conductive coil antennas for wireless communications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.63-68
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• 2003

The DC and RF characteristics of $In_{0.5}Ga_{0.5}P/In_{0.22}Ga_{0.78}As/GaAs$ p-HEMTs with a gate oxide layer of various thicknesses ($50{\;}{\AA},{\;}300{\;}{\AA}$) were investigated and compared with those of a Schottky-gate p-HEMT without the gate oxide layer. A prominent improvement in the breakdown voltage characteristics were observed for a p-HEMT having a gate oxide layer, which was implemented by using a liquid phase oxidation technique. The on-state breakdown voltage of the p-HEMT having the oxide layer of $50{\;}{\AA}$was ~2.3 times greater than that of a Schottky-gate p-HEMT. However, the p-HEMT having the gate oxide layer of $300{\;}{\AA}$ suffered from a poor gate-control capability due to the drain induced barrier lowering (DIBL) resulting from the thick gate oxide inspite of the lower gate leakage current and the higher on-state breakdown voltage. The results for a primitive p-HEMT having the gate oxide layer without any optimization of the structure and the process indicate the potential of p-HEMT having the gate oxide layer for high-power applications.

• Journal of Digital Convergence
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• v.12 no.7
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• pp.291-296
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• 2014

Inserting a $SiO_2$ layer underneath the p-pad electrode as the current blocking layer (CBL) structure and extending p-metal finger patterns, the GaN LEDs using an indium-tin-oxide (ITO) layer show the improved light output intensity, resulting from better current spreading and reduced light loss on the surface of p-pad metal. The LEDs with an oxide layer of $100{\mu}m$-pad-width and $6{\mu}m$-finger-width have better light output intensities than those with an oxide layer of $105{\mu}m$-pad-width and $12{\mu}m$-finger-width. Using the ATLAS device simulator from Silvaco Corporation, the current density distributions on the active layer in CBL LEDs have been investigated.