• 한국세라믹학회지
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• 제25권4호
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• pp.315-320
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• 1988

The Nb doped BaTiO3 was synthesized by coprecipitation method using H2O2 media in region from pH 8 to pH 11. The powder prepared by using this method was crystallized at about 20$0^{\circ}C$ and average particle size was controlled by heat treatment. Because of preparation having fine particle and relatively narrow particle size distribution, high performance PTC device was made of these precipitated powders.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.372-375
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• 2017

ZnO thin films were deposited by RF magnetron sputtering and then diffused by using an As source in the ampouletube. Also, the ZnO p-n homojunction was made by using As-doped ZnO thin films, and its properties were analyzed. After the As doping, the surface roughness increased, the crystal quality deteriorated, and the full width at half maximum was increased. The As-doped ZnO thin films showed typical p-type properties, and their resistivity was as low as $2.19{\times}10^{-3}{\Omega}cm$, probably because of the in-diffusion from an external As source and out-diffusion from the GaAs substrate. Also, the ZnO p-n junction displayed the typical rectification properties of a p-n junction. Therefore, the As diffusion method is effective for obtaining ZnO films with p-type properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.745-748
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• 2001

We synthesized polypyrrole (PPy) by electrolysis of the pyrrole monomer solution containing support electrolyte KCl and/or p-toluene sulfonic acid sodium salt (p-TS). The electrochemical behavior was investigated using cyclic voltammetry and AC impedance. In the case of using electrolyte p-TS, the redox potential was about -0.3 V vs. Ag/AgCl reference electrode, while the potential was about 0 V for using electrolyte KCl. It is considered as the backbone forms a queue effectively by doping p-T S. Therefore, it is possible to be arranged regularly. That leads to improvement in the electron hopping. The AC impedance plot gave a hint of betterment of mass transport. PPy doped with p-TS has improved in mass transport, or diffusion. That is because the PPy doped with p-TS has a good orientation, and is more porous than PPy with KCl.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.529-532
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• 2001

We synthesized polypyrrole (PPy) by electrolysis of the pyrrole monomer solution containing support electrolyte KCl and/or p-toluene sulfonic acid sodium salt (p-TS). The electrochemical behavior was investigated using cyclic voltammetry and AC impedance. In the case of using electrolyte p-TS, the redox potential was about -0.3 V vs. Ag/ AgCl reference electrode, while the potential was about 0 V for using electrolyte KCl. It is considered as the backbone forms a queue effectively by doping p-TS Therefore, it is possible to be arranged regularly. That leads to improvement in the electron hopping. The AC impedance plot gave a hint of betterment of mass transport. PPy doped with p-TS has improved in mass transport, or diffusion. That is because the PPy doped with p-TS has a good orientation, and is more porous than PPy with KCl.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.529-532
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• 2001

We synthesized polypyrrole (PPy) by electrolysis of the pyrrole monomer solution containing support electrolyte KCl and/or p-toluene sulfonic acid sodium salt (p-TS). The electrochemical behavior was investigated using cyclic voltammetry and AC impedance. In the case of using electrolyte p-75, the redox potential was about -0.3 V vs. Ag/AgCl reference electrode, while the potential was about 0 V for using electrolyte KCl. It is considered as the backbone forms a queue effectively by doping p-TS Therefore, it is possible to be arranged regularly. That leads to improvement in the electron hopping. The AC impedance plot gave a tent of betterment of mass transport. PPy doped with p-TS has improved in mass transport, or diffusion. That is because the PPy doped with p-TS has a good orientation, and is more porous than PPy with KCl.

• 한국세라믹학회지
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• 제45권2호
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• pp.90-93
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• 2008

The oxygen gas behavior in PDP (plasma Display Panel) glass melts doped with sulfate ($SO_4^{-2}$) or blast furnace slag (BFS, $S^{2-}$) or both by means of yttria-stabilized zirconia (YSZ) electrodes was observed after the first fining. The temperature dependence of oxygen equilibrium pressure ($P_{O2}$) in each melt showed typical behavior, namely $P_{O2}$ decreased as temperature decreased. This suggests that an oxidation of $S^{4+}$ to $S^{6+}$ took place. However, the $P_{O2}$-value at constant temperature increased in the following order: BFS$P_{O2}$ of the melt doped with sulfate+BFS was much lower than that of the melt with only sulfate, although only 10% of sulfur was added by the BFS. This behavior can be explained by the redox reaction between sulfide ions in the BFS and dissolved oxygen ions in the melt during the first fining.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.15-16
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• 2008

We have grown N-doped ZnO thin films on sapphire substrate by employing dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound exciton peak ($A^0X$) that indicated the successful p-type doping of ZnO with N.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.447-448
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• 2008

In this paper, we investigated the diffraction grating efficiency on AsSeS and Ag-doped amorphous chalcogenide Ag/AsSeS thin film for used to volume hologram. The film thickness was 0.5um and diffraction efficiency was obtained from (P:P) polarized He-Ne (632.8nm)laser beam on AsSeS and Ag/AsSeS thin films. As a results, diffraction grating was not formed at AsSeS thin film but at Ag-doped AsSeS thin film, diffraction grating was formed well compare with the former.

• Applied Science and Convergence Technology
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• 제23권1호
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• pp.34-39
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• 2014

The programmable switches which control the delivery of electrical signals in programmable logic devices are fabricated using memory technology. Although phase change memory (PCM) technology is one of the most promising candidates for the manufacturing of the programmable switches, the threshold switching material should be added to a PCM cell for realization of the programmable switches based on PCM technology. In this work, we report the impurity-doped $Ge_2Sb_2Te_5$ (GST) chalcogenide alloy exhibiting threshold switching property. Unlike the GST thin film, the doped GST thin film prepared by the incorporation of In and P into GST is not crystallized even at the postannealing temperature higher than $200^{\circ}C$. This specific crystallization behavior in the doped GST thin film is attributed to the stabilization of the amorphous phase of GST by In and P doping.

• 비파괴검사학회지
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• 제37권1호
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• pp.1-6
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• 2017

본 논문에서는 테라헤르츠파 시간분광영상시스템을 이용하여 도핑된 실리콘 웨이퍼의 물리적 특성을 측정하는 것에 관한 연구를 진행하였다. 투과모드와 $30^{\circ}$의 입사각을 가진 반사모드를 이용하여 측정하였으며 실리콘 웨이퍼의 도핑 정도는 N-type과 P-type 모두에서 $10^{14}$에서 $10^{18}$까지 다양하게 준비하였다. 그 결과, 도핑 정도와 테라헤르츠파와의 상관관계를 찾았으며 이를 이용하면 모든 경우에 대한 도핑된 실리콘 웨이퍼의 도핑 정도를 확인할 수 있다. 또한, 각 도핑된 실리콘 웨이퍼의 도핑된 두께, 굴절률, 유전율을 테라헤르츠 시간영역 파형분석을 통하여 계산할 수 있었다. 따라서, 테라헤르츠 시간분광영상화 기술은 도핑된 실리콘 웨이퍼의 굴절률과 유전율과 같은 물리적 특성뿐만 아니라 도핑 정도를 측정할 수 있는 유용한 기술이 될 것으로 기대된다.