• Title/Summary/Keyword: p-doped

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Electrical Properties of Gadolinium-doped Ceria/Magnesia (CGO/MgO) Composite Electrolytes (Gadolinium-doped Ceria/Magnesia (CGO/MgO) 복합체 전해질의 전기적 특성 분석)

  • Jo, Seung-Hwan;Muralidharan, P.;Kim, Do-Kyung
    • Korean Journal of Materials Research
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    • v.18 no.9
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    • pp.470-474
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    • 2008
  • Composites of gadolinium-doped ceria/magnesia(CGO/MgO) were synthesized and characterized for the electrolytes of intermediate temperature solid oxide fuel cells. XRD and SEM results revealed that composite electrolytes consisted of their own phases after sintering at $1400^{\circ}C$ without noticeable solid solution of Mg into CGO. As the MgO content increased, the total electrical conductivity decreased, which might be attributed to the decrease of grain boundary conductivity, possibly due to the lowering of the continuity of the CGO grains and blocking effects of the insulating MgO phase. The space charge effect may not be a significant factor to affect the electrical conductivity of the CGO/MgO composites.

Optical properties of nitrogen doped ZnO thin films grown by dielectric barrier discharge plasma-assisted pulsed laser deposition (Dielectric barrier discharge 플라즈마 펄스 레이져 증착법을 통해 성장한 nitrogen 도핑 된 산화아연 박막의 광학적 특성)

  • Lee, Deuk-Hee;Kim, Sang-Sig;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1256_1257
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    • 2009
  • We have grown, for the first time to our knowledge, N-doped ZnO thin films on sapphire substrate by employing novel dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting to find a dominant acceptor-bound exciton peak ($A^0X$) that indicates the successful p-type doping of ZnO with N.

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High performance top-emitting OLEDs with copper iodide-doped hole injection layer

  • Lee, Jae-Hyun;Leem, Dong-Seok;Kim, Jang-Joo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.492-495
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    • 2008
  • Efficient top-emitting organic light-emitting diodes were fabricated using copper iodide (CuI) doped NPB as a p-doped hole injection layer to improve hole injection from a silver bottom electrode. The enhanced hole injection is originated from the formation of the charge transfer complex between CuI and NPB. The devices result in high efficiency of 69 cd/A with almost Lambertian emission pattern.

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A Study on the Fluorine Effect of Direct Contact Process in High-Doped Boron Phosphorus Silicate Glass (BPSG)

  • Kim, Hyung-Joon;Choi, Pyungho;Kim, Kwangsoo;Choi, Byoungdeog
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.6
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    • pp.662-667
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    • 2013
  • The effect of fluorine ions, which can be reacted with boron in high-doped BPSG, is investigated on the contact sidewall wiggling profile in semiconductor process. In the semiconductor device, there are many contacts on $p^+/n^+$ source and drain region. However these types of wiggling profile is only observed at the $n^+$ contact region. As a result, we find that the type of plug implantation dopant can affect the sidewall wiggling profile of contact. By optimizing the proper fluorine gas flow rate, both the straight sidewall profile and the desired electrical characteristics can be obtained. In this paper, we propose a fundamental approach to improve the contact sidewall wiggling profile phenomena, which mostly appear in high-doped BPSG on next-generation DRAM products.

Neutral Beam assisted Chemical Vapor Deposition at Low Temperature for n-type Doped nano-crystalline silicon Thin Film

  • Jang, Jin-Nyeong;Lee, Dong-Hyeok;So, Hyeon-Uk;Yu, Seok-Jae;Lee, Bong-Ju;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.52-52
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    • 2011
  • A novel deposition process for n-type nanocrystalline silicon (n-type nc-Si) thin films at room temperature has been developed by adopting the neutral beam assisted chemical vapor deposition (NBa-CVD). During formation of n-type nc-Si thin film by the NBa-CVD process with silicon reflector electrode at room temperature, the energetic particles could induce enhance doping efficiency and crystalline phase in polymorphous-Si thin films without additional heating on substrate; The dark conductivity and substrate temperature of P-doped polymorphous~nano crystalline silicon thin films increased with increasing the reflector bias. The NB energy heating substrate(but lower than $80^{\circ}C$ and increase doping efficiency. This low temperature processed doped nano-crystalline can address key problem in applications from flexible display backplane thin film transistor to flexible solar cell.

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Luminescence behaviour of rare earth doped alkaline earth aluminates synthesized by combustion method (연소법에 의한 rare earth doped doped alkaline earth aluminates 형광체의 발광특성)

  • Jung, Young-Ho;Park, Jin-Won;Park, Jo-Yong;Khatkar, S.P.;Taxak, V.B.;Myung, Kwang-Shik;Han, Sang-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.581-584
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    • 2002
  • A new method for the preparation of lanthanide ions activated strontium aluminates phosphor by combustion method has been proposed. Combustion method consist of the redox reactions between the respective metal nitrates and urea in a preheated funace at $500^{\circ}C$. The luminescence behavior of the phosphor was studied and compared with corresponding phosphor prepared by conventional method. Effect of $Mg^{2+}$ ion concentration in strontium aluminate phosphor was investigated and the maximum luminescence of about $100cd/m^2$ was obtained. This method gave better brightness and small size to the phosphor than made by conventional method.

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Structural and Electrical Properties of Aluminum Doped ZnO Electrodes Prepared by Atomic Layer Deposition for Application in Organic Solar Cells (유기태양전지 응용을 위한 원자층 증착 방식 제작의 알루미늄이 도핑 된 ZnO의 전기적, 구조적 특징)

  • Seo, Injun;Ryu, Sang Ouk
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.2
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    • pp.1-5
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    • 2014
  • Transparent and conducting aluminum-doped ZnO electrodes were fabricated by atomic layer deposition methods. The electrode showed the lowest resistivity of $5.73{\times}10^{-4}{\Omega}cm$ at a 2.5% cyclic layer deposition ratio of Trimethyl-aluminum and Diethyl-zinc chemicals. The electrodes showed minimum resistivity when deposited at a temperature of $225^{\circ}C$. The electrode also showed optical transmittance of about 92% at 300 nm. An organic solar cell made with a 300-nm-thick aluminum-doped ZnO electrode exhibited 2.0% power conversion efficiency.

Characteristic of P doped ZnO-based thin film transistor by DC magnetron sputtering

  • Lee, Sih;Moon, Yeon-Keon;Moon, Dae-Yong;Kim, Woong-Sun;Kim, Kyung-Taek;Park, Jong-Wan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.540-542
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    • 2009
  • Phosphorus doped ZnO (PZO) thin films were deposited on $SiO_2$/n-Si substrates using DC magnetron sputtering system varying oxygen partial pressures from 0 to 40 % under Ar atmosphere. The deposited films showed reduced n-type conductivity due to the compensating donor effects by phosphorus dopant. The bias-time stability shows relatively good stability over bias and time comparing to un-doped ZnO-based TFTs.

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UV Light Induced Photocatalytic Degradation of Cyanides in Aqueous Solution over Modified $TiO_2$

  • Kim, Hyeong Ju;Kim, Jae Hyeon;Lee, Cheong Hak;Hyeon, Taek Hwan;Choe, Won Yong;Lee, Ho In
    • Bulletin of the Korean Chemical Society
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    • v.22 no.12
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    • pp.1371-1374
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    • 2001
  • Metal doping was adopted to modify TiO2 (P-25) and enhance the photocatalytic degradation of harmful cyanides in aqueous solution. Ni, Cu, Co, and Ag doped TiO2 were found to be active photocatalysts for UV light induced degradation of aqueous cyanides generating cyanate, nitrate and ammonia as main nitrogen-containing products. The photoactivity of Ni doped TiO2 was greatly affected by the state of Ni, that is, the crystal size and the degree of reduction of Ni. The modification effects of some mixed oxides, that is, Ni-Cu/TiO2 were also studied. The activity of Ni-Cu/TiO2 for any ratio of Cu/Ni was higher than that of Ni- or Cu-doped TiO2, and the catalyst at the Cu/Ni ratio of 0.3 showed the highest activity for cyanide conversion.

Electrochemical Determination of Chemical Oxygen Demand Based on Boron-Doped Diamond Electrode

  • Dian S. Latifah;Subin Jeon;Ilwhan Oh
    • Journal of Electrochemical Science and Technology
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    • v.14 no.3
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    • pp.215-221
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    • 2023
  • A rapid and environment-friendly electrochemical sensor to determine the chemical oxygen demand (COD) has been developed. The boron-doped diamond (BDD) thin-film electrode is employed as the anode, which fully oxidizes organic pollutants and provides a current response in proportion to the COD values of the sample solution. The BDD-based amperometric COD sensor is optimized in terms of the applied potential and the solution pH. At the optimized conditions, the COD sensor exhibits a linear range of 0 to 80 mg/L and the detection limit of 1.1 mg/L. Using a set of model organic compounds, the electrochemical COD sensor is compared with the conventional dichromate COD method. The result shows an excellent correlation between the two methods.