• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.468-473
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• 2009

Selective area epitaxy of multiple-stacked InP/InGaAs structures were grown by chemical beam epitaxy. The width of top of the multiple-stacked InP/InGaAs layer which were selectively grown on the stripe lines parallel to the <011> direction was narrowed, while the width of top of the multiple-stacked InP/InGaAs layer on the stripe lines parallel to the <01-1> was widen. This difference according to the <011> and <01-1> direction was explained by the growth of InGaAs <311>A and B faces on the (100) InP surface on the stripe lines parallel to the <01-1> direction. Under growth rate of $1\;{\mu}m/h$, top of the multiple-stacked InP/InGaAs was flattened as the pressure of group V gas was decreased. This phenomenon was understood by the saturation of group V element on the surface.

• The Journal of Korean Institute of Information Technology
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• v.16 no.11
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• pp.61-68
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• 2018

This paper describes design of a 10.525 GHz self oscillating mixer semiconductor IC chip combining voltage controlled oscillator and frequency mixer using silicon CMOS technology for Doppler radar applications. The p-core type VCO included in the self oscillating mixer minimizes the noise contained in the transmitted signal. This noise minimization increases the sensing distance and acts in a direction favorable to the reaching distance and the sensitivity of the motion detection sensor. Simulation results for phase noise show that a VCO designed as a P-core has a noise characteristic of -106.008 dBc / Hz at 1 MHz offset and -140.735 dBc / Hz at 25 MHz offset compared to a VCO designed with N-core and NP-core showed excellent noise characteristics. If a self-oscillating mixer is implemented using a p-core designed VCO in this study, a motion sensor with excellent range and reach sensitivity will be produced.

• Journal of the Korean Electrochemical Society
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• v.17 no.1
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• pp.1-6
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• 2014

This review article summarizes photoelectrochemical water splitting using gallium nitride (GaN). GaN materials have been studied as novel photoelectrode material due to its chemical stability and easy band gap engineering. Unlike other semiconductor materials that are easily corroded in strongly acidic or alkaline electrolyte, n-type GaN is chemically stable enough to be used as photoanode in oxygen evolution reaction. Furthermore, studies on p-type GaN have been recently reported. This review briefly discusses problems that need to be solved before GaN materials find widespread use in solar fuel application.

• Journal of Electrochemical Science and Technology
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• v.7 no.1
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• pp.58-67
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• 2016

The corrosion behavior of duplex stainless steel AISI 2205 was investigated in ethylene glycol-water mixture in the presence of 50 W/V % LiBr at different concentrations and different temperatures. Cyclic polarization, impedance measurements and Mott-Schottky analysis were used to study the corrosion behavior the semi conductive properties of the passive films. The results showed that with increasing in the ethylene glycol concentration to 10 V/V%, the corrosion rate of the steel alloy substrate increased. In higher concentrations of ethylene glycol, corrosion current of steel decreased. The results of scanning electron microscopy of electrode surface confirmed the electrochemical tests. Electrochemical experiment showed that duplex steel was stable for pitting corrosion in this environment. The increase in the ethylene glycol concentration led to increasing the susceptibility to pitting corrosion. The corrosion current increased as the temperature rise and also pitting potentials and repassivation potentials shifted towards the less positive values as the temperature increased. According to Mott-Schottky analysis, passive films of stainless steel at the different temperatures showed both n-type and p-type semiconductor behavior in different potential.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3211-3217
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• 2013

Density functional theory (DFT) and time-dependent DFT (TD-DFT) calculations have been employed to investigate the molecular structures and absorption spectra of three D-${\pi}$-A-type organic dyes (C1-1, D5 and TH208) containing identical ${\pi}$-spacers and electron acceptors, but different aromatic amine electron-donating groups (tetrahydroquinoline, triphenylamine and phenothiazine). The coplanar geometries indicate that the strong conjugation is formed in the dyes. The electronic structures suggest that the intramolecular charge transfer from the donor to the acceptor occurs, and the electron-donating ability of tetrahydroquinoline is stronger than those of triphenylamine and phenothiazine. The computed orbital energy levels of these dyes confirm that the electrons could be injected from the excited dyes to the semiconductor conduction band and the oxidized dyes could be reduced effectively by electrolyte. The TD-DFT results show that the CAM-B3LYP/6-31+G(d, p) is suitable for calculating the absorption spectra. The first absorption band for these dyes is assigned to the HOMO${\rightarrow}$LUMO and HOMO-1${\rightarrow}$LUMO transitions.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1114-1115
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• 2006

The preparation of single-phase $CuLaO_2$ with delafossite-type structure by means of the solid-state reaction method was investigated using X-ray diffraction. The results showed that notwhistanding the fact that there was a trace of metallic copper, nearly single-phase $CuLaO_2$ was obtained by using $La(OH)_3$ as a lanthanum source and by firing the mixed powder with nonstoichiometric composition ratio of $La(OH)_3:Cu_2O=1:1.425$ in a vacuum at 1273 K for 10 h. The measurement of electrical conductivity and Seebeck coefficient showed that $CuLaO_2$ thus obtained was a p-type semiconductor and had a Seebeck coefficient of approximately $70{\mu}V/K$.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.24-29
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• 2001

GaN films were grown for various Mg doping concentrations in metal-organic chemical vapor deposition. Below the Mg concentration of 10$^{19}$ ㎤, the thermally annealed sample shows the compensated phase to n-type GaN in Hall measurement. In the MB concentration of 4$\times$10$^{19}$ ㎤ corresponding to the hole carrier concentration of 2.6$\times$1$^{19}$ ㎤ there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the $V_{Ga}$ and for an acceptor of $Mg_{Ga}$ . The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photocurrent signal of 3.02-3.31 eV. Above the Mg concentration of 4$\times$10$^{19}$ ㎤, both the Mg doping level and Mg concentration were saturated and there Is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.9-10
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• 2007

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition(ALD). And we studied the electrical characterization of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3\;at\;350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Through TEM(Transmission Electron Microscope), XRD(X-ray Diffraction), capacitance-voltage(C-V) and current-voltage(I-V) analysis, the role of thin Hf metal layer for the better $HfO_2$/Si interface property was investigated.

• Journal of Industrial Technology
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• v.28 no.A
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• pp.19-22
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• 2008

In recent years, much attention has been paid to "Photocatalytic oxidation" as an alternative technique, where the pollutants are degraded by UV-irradiation in the presence of a semiconductor suspension such as titanium dioxide. $TiO_2$ is the most often used photocatalyst due to its considerable photocatalytic activity, high stability, non-environmental impact and low cost. 1n this research, the photocatalytic degradation of humic acid, acetaldehyde and methylene blue in $UV/TiO_2$ systems has been stydied. The effect of calcination temperature for manufacturing of $TiO_2$ photocatalysts and type of photocatalysts on photodegradation has been investigated. Photocatalysts with various metal ions(Mn, Fe, Cu and Pt) loading are tested to evaluate the effects of metal ions impurities on photodegradation. The photodegradation efficiency with $Pt-TiO_2$ or $Fe-TiO_2$ or $Cu-TiO_2$ is higher than Degussa P-25 powder. However, the photodegradation efficiency with $Mn-TiO_2$ is lower than Degussa P-25 powder. The photocatalytic properties of the nanocrystals were strongly dependent upon the crystallinity, particle size, standard reduction potential of various transition metal and electronegativity of various transition metal. As a result photocatalysts with various metal ion loading evaluated the effect of photodegradation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.281.2-281.2
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• 2016

Two-dimensional van der Waals (2D vdWs) materials have been extensively studied for future electronics and materials sciences due to their unique properties. Among them, black phosphorous (BP) has shown infinite potential for various device applications because of its high mobility and direct narrow band gap (~0.3 eV). In this work, we demonstrate a few-nm thick BP-based nonvolatile memory devices with an well-known poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] ferroelectric polymer gate insulator. Our BP ferroelectric memory devices show the highest linear mobility value of $1159cm^2/Vs$ with a $10^3$ on/off current ratio in our knowledge. Moreover, we successfully fabricate the ferroelectric complementary metal-oxide-semiconductor (CMOS) memory inverter circuits, combined with an n-type $MoS_2$ nanosheet transistor. Our memory CMOS inverter circuits show clear memory properties with a high output voltage memory efficiency of 95%. We thus conclude that the results of our ferroelectric memory devices exhibit promising perspectives for the future of 2D nanoelectronics and material science. More and advanced details will be discussed in the meeting.