• Title/Summary/Keyword: p-CuO

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Pretreatment for Cu electroplating and Etching Property of Cu-Cr Film (Cu-Cr합금 박막의 구리 전기도금을 위한 전처리 및 에칭 특성에 관한 연구)

  • Kim, N. S.;Kang, T.;Yun, I. P.;Park, Y. S.
    • Journal of the Korean institute of surface engineering
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    • v.26 no.3
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    • pp.149-157
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    • 1993
  • In the study of TAB(Tape Automated Bonding)technologies, Cu-Cr sputtered seed layer has been used to improve the adhesion between Polyimide and Cu film and electrical properties. But the Cu electrodeposit on Cu-Cr film had poor adhesion or powder-like form due to the surface Cr oxides on the Cu-Cr film. By means of activating the Cu-Cr film with the oxalic acid and phosphoric acid, the Cu film with the improved adhesion could be coated on the Cu-Cr sputtered film in CuSO4 solution. The etching rate was compared with increasing the Cr content of the sputtered Cu-Cr film, and anodic polarization curve in FeCl3 solution was investigated. With increasing the Cr content, the etching rate was reduced. The clean etching cross section could be obtained with increasing the concentration of FeCl3 solution. But above the 13 w/o Cr content, Cu-Cr sputtered film could not bed etched cleanly only with FeCl3 solution and additives were needed.

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Study on TSD Characteristics of LiF ( Mg , Cu , P ) Single Crystal (LiF ( Mg , Cu , P ) 단결정의 TSD 특성에 관한 연구)

  • 도시홍
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.26 no.1
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    • pp.8-13
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    • 1990
  • The microscopic relaxation parameters for the single crystal were measured by using thermally stimulated depolarization (TSD). Initial rise method, various heating rate method and total glow peak method were used for the determination of the activation energy and Debye relaxation time from TSD glow curves. Activation energy, pre-exponential factor and relaxation time for impurity-vacancy dipole reorientation were 0.55eV, 1.97$\times$10 super(-12) sec and 12.19sec in average, respectively. Dielectric dissipation factor for the crystal was calculated from the measured TSD glow curve, its value being about 3$\times$10 super(-2).

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SUPERSTRUCTURES OF Bi-Sr-Ca-Cu-O SUPERCONDUTORS (Bi-Sr-Ca-Cu-O계열 초전도체의 초구조)

  • Nam, Gung-Chan;Lee, Sang-Yun
    • Korean Journal of Materials Research
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    • v.4 no.3
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    • pp.268-279
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    • 1994
  • The x-ray powtler pattern of single phase $Bi_2S_2CaCu_2O_{8+x}$ has been identified and fullyindexed using a pseudotetragonal subcell with a= 5.408, c = 30.83 $\AA$ and an incommensurate supercellwith reciprocal lattice vector, X$q^*$, given by $q^*=0.211b^*-c^*$. The x -ray powder pattern of the Pb-free110K superconductor phase "$Bi_2S_2CaCu_2O_{10+x}$" has many lines which belong t.o an incommensuratesupercell. Using elect.ron d~ffraction pImt.ographs as a indexing guide, an indexing scheme for the powderpattern has been obtained. The unit cell has a geometrically orthorhombic subcell a=5.411, b= 5.420, c=37.29(2) $\AA$. Supercell reflections have indices that are derived from the subcell k, 1 indices by addition uf$\pm q^*$, where $\pm q^*=0.211b^*-0.78c^*$The incommensurate con~ponent In the b dwection, $\delta$, is the same for both phases but on going from2212 to 2223 phase, the superlattic component in the c direction changes from commensurate($\varepsilon$=1) toincommensurate($\varepsilon$=0.78).X>$\varepsilon$=0.78).

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The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

  • Lin, Paul-Chang;Xu, Jin-Hai;Lu, Hong-Liang;Zhang, David Wei;Li, Pei
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.3
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    • pp.319-325
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    • 2017
  • Through silicon via (TSV) technology is extensively used in 3D IC integrations. The special structure of the TSV is realized by CMP (Chemically Mechanical Polishing) process with a high Cu removal rate and, low dishing, yielding fine topography without defects. In this study, we investigated the electrochemical behavior of copper slurries with various inhibitors in the Cu CMP process for advanced TSV applications. One of the slurries was carried out for the most promising process with a high removal rate (${\sim}18000{\AA}/Min$ @ 3 psi) and low dishing (${\sim}800{\AA}$), providing good microstructure. The effects of pH value and $H_2O_2$ concentration on the slurry corrosion potential and Cu static etching rate (SER) were also examined. The slurry formula with a pH of 6 and 2% $H_2O_2$, hadthe lowest SER (${\sim}75{\AA}/Min$) and was the best for TSV CMP. A novel Cu TSV CMP process was developed with two CMPs and an additional annealing step after some of the bulk Cu had been removed, effectively improving the condition of the TSV Cu surface and preventing the formation of crack defects by variations in wafer stress during TSV process integration.

Preparation and Characterization of Cu/MCM-41 Mesoporous Catalysts for NO Removal (Cu/MCM-41 메조포러스 촉매 제조 및 NO 제거 특성)

  • Park, Soo-Jin;Cho, Mi-Hwa;Kim, Seok;Kwon, Soo-Han
    • Applied Chemistry for Engineering
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    • v.16 no.6
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    • pp.737-741
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    • 2005
  • In this study, the effect of copper content on the NO removal efficiency by Cu/MCM-41 has been investigated. MCM-41 was prepared by hydrothermal synthesis using a gel mixture of colloidal silica solution and cetyltrimethylammonium. Cu/MCM-41 was manufactured with copper content (5, 10, 20, and 40%) in Cu(II) acetylacetonate. The surface properties of MCM-41 were investigated by using pH, XRD, and FT-IR analyses. $N_2/77K$ adsorption isotherm characteristics, including the specific surface area and micropore volume were studied by BET's equation and Boer's t-plot methods. NO removal efficiency was confirmed by gas chromatography technique. From the experimental results, the MCM-41 was analyzed to have the surface functional groups of Si-OH and Si-O-Si and the characteristic diffraction lines (100), (110), (200), and (210) corresponding to a hexagonal arrangement structure. The copper content supported on MCM-41 appeared to increase the NO removal efficiency in spite of decreasing the specific surface areas or micropore volumes. Consequently, it was found that the copper content in Cu/MCM-41 played an important role in improving the NO removal efficiency, which was mainly attributed to the catalytic reactions.

Threshold Voltage Properties of OFET with CuPc Active Material

  • Lee, Ho-Shik;Kim, Seong-Geol
    • Journal of information and communication convergence engineering
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    • v.13 no.4
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    • pp.257-263
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    • 2015
  • In this study, organic field-effect transistors (OFETs) using a copper phthalocyanine (CuPc) material as an active layer and SiO2 as a gate insulator were fabricated with varying active layer thicknesses and channel lengths. Further, using a thermal evaporation method in a high-vacuum system, we fabricated a CuPc FET device of the top-contact type and used Au materials for the source and drain electrodes. In order to discuss the channel formation and FET characteristics, we observed the typical current-voltage characteristics and calculated the threshold voltage of the CuPc FET device. We also found that the capacitance reached approximately 97 pF at a negative applied voltage and increased upon the accumulation of carriers at the interface of the metal and the CuPc material. We observed the typical behavior of a FET when used as an n-channel FET. Moreover, we calculated the threshold voltage to be about 15-20 V at VDS = -80 V.

Geochemical Characteristics of Stream Sediments Based on Bed Rocks in the Naju Area, Korea (기반암에 따른 나주지역 하상퇴적물의 지구화학적 특성)

  • Park, Young-Seog;Kim, Jong-Kyun;Jung, Young-Hwa
    • Journal of the Korean earth science society
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    • v.27 no.1
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    • pp.49-60
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    • 2006
  • The purpose of this study is to investigate geochemical characteristics for stream sediments in the Naju area. We collected 139 stream sediments samples from primary channels. Samples were dried slowly in the laboratory and chemical analysis was carried out using XRF. ICP-AES and NAA. In order to investigate geochemical characteristics, the geological groups categorized into granitic gneiss area, schist area, granite area, arenaceous rock area, tuff area, andesite area, and rhyolite area. Average contents of major elements for geological groups are $SiO_2\;58.37{\sim}66.06wt.%,\;Al_2O_3\;13.98{\sim}18.41wt.%,\;Fe_2O_3\;4.09{\sim}6.10wt.%,\;CaO\;0.54{\sim}1.33wt.%,\;MgO\;0.86{\sim}1.34wt.%,\;K_2O\;2.38{\sim}4.01wt.%,\;Na_2O\;0.90{\sim}1.32wt.%,\;TiO_2\;0.82{\sim}1.03wt.%,\;MnO\;0.09{\sim}0.15wt.%,\;P_2O_5\;0.11{\sim}0.18wt.%$. According to the comparison of average contents of major elements, $Al_2O_3\;and\;K_2O$ are higher in granitic gneiss area, $Fe_2O_3,\;CaO,\;P_2O_5$ are higher in tuff area, MgO and $TiO_2$ are higher in andesite area, $Na_2O_$ is higher in rhyolite area, $SiO_2$, and MnO are higher in arenaceous rock area. Average contents of minor and rare earth elements for geological groups are $Ba\;1278{\sim}1469ppm,\;Be\;1.1{\sim}1.5ppm,\;Cu\;18{\sim}25ppm,\;Nb\;25{\sim}37ppm,\;Ni\;16{\sim}25ppm,\;Pb\;21{\sim}28ppm,\;Sr\;83{\sim}155ppm,\;V\;64{\sim}98ppm,\;Zr\;83{\sim}146ppm,\;Li\;32{\sim}45ppm,\;Co\;7.2{\sim}12.7ppm,\;Cr\;37{\sim}76ppm,\;Cs\;4.8{\sim}9.1ppm,\;Hf\;7.5{\sim}25ppm,\;Rb\;88{\sim}178ppm,\;Sc\;7.7{\sim}12.6ppm,\;Zn\;83{\sim}143ppm,\;Pa\;11.3{\sim}37ppm,\;Ce\;69{\sim}206ppm,\;Eu\;1.1{\sim}1.5ppm,\;Yb\;1.8{\sim}4.4ppm$. According to the comparison of average contents of minor and rare earth elements for geological groups, Pb, Li, Cs, Hf, Rb, Sb, Pa, Ce, Eu, and Yb are higher in granitic gneiss area; Ba, Co, and Cr in schist area; Nb, Ni, and Zr in arenaceous rock area; Sr in tuff area: and Be, Cu, V, Sc, and Zn are such in andesite area.

Effect of supplementing hydroxy trace minerals (Cu, Zn, and Mn) on egg quality and performance of laying hens under tropical conditions

  • Vasan Palanisamy;Sakthivel PC;Lane Pineda;Yanming Han
    • Animal Bioscience
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    • v.36 no.11
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    • pp.1709-1717
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    • 2023
  • Objective: A pivotal study was designed to investigate the effect of Hydroxy (HYC) Cu, Zn, and Mn on egg quality and laying performance of chickens under tropical conditions. Methods: A total of 1,260 Babcock White laying hens (20-wk-old) were randomly assigned to one of 4 treatments with 15 replicates of 21 hens each in a Randomized Complete Block Design. The birds were reared for 16 weeks and were fed the corn-soybean meal diets supplemented with one of the following mineral treatments: T1, inorganic (INO, 15 ppm CuSO4, 80ppm MnSO4 and 80 ppm ZnO); T2, Hydroxy-nutritional level (HYC-Nut, 15 ppm Cu, 80 ppm Mn, 80 ppm Zn from Hydroxy); T3, Hydroxy-Low (HYC-Low, 15 ppm Cu, 60 ppm Mn, 60 ppm Zn from Hydroxy); T4, Hydroxy plus inorganic (HYC+INO, 7.5 ppm HYC Cu+7.5 ppm CuSO4, 40 ppm HYC ZnO+40 ppm ZnSO4, 40 ppm HYC Mn+40 ppm MnSO4). The egg production was recorded daily, while the feed consumption, feed conversion ratio (FCR) and egg mass were determined at the end of each laying period. The egg quality parameters were assayed in eggs collected over 48 h in each laying period. Results: Overall, no significant effect of treatments was observed on percent egg production, egg weight and FCR (p>0.05). Feed intake was significantly lower in birds fed Hydroxy plus inorganic (p<0.05) diet. The supplementation of HYC-Low significantly increased the egg mass compared to the other treatments (p<0.05). HYC supplementation alone or in combination with INO elicited a positive effect on shell thickness, shell weight, shell weight per unit surface area, yolk colour, albumen and yolk index for a certain period (p<0.05), but not throughout the whole laying period. Conclusion: Dietary supplementation of HYC-Low (15-60-60 mg/kg) showed similar effects on production performance and egg quality characteristics in laying hens as compared to 15-80-80 mg/kg of Cu-Zn-Mn from inorganic sources. This indicates that sulphate based inorganic trace minerals can effectively be substituted by lower concentration of hydroxyl minerals.

Gas Sensing Mechanism of CuO/ZnO Heterojunction Gas Sensor (이종접합 가스센서의 가스감지기구)

  • Yi, S.H.;Chu, G.S.;Park, J.H.;Sung, Y.K.
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1114-1116
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    • 1995
  • P/N(CuO/ZnO) Heterojunction gas sensors were made by 2-step sintering methods and its gas sensing property was measured by varying the injected gases and the operating temperatures. As the applied voltage was increased in air ambients, the current-voltage characteristics shown the ohmic properties. However, when the CO gas ambients, 500 ppm at $200^{\circ}C$, the current-voltage characteristics behaves like a rectifying diode s after 3 mins later and its conduction mechanism is discussed qualitatively for the first times.

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