• Progress in Superconductivity
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• v.3 no.1
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• pp.120-124
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• 2001

To establish the deposition condition of YBCO thin film on MgO single crystal substrates, processing parameters of deposition temperature, chemical composition and oxygen partial pressure were controlled. When using a Ba-deficient composition of YB $a_{1.8}$ $Cu_3$$O_{x}$, non-superconducting phase like CuO, $CuYO_2$ were formed, but BaCu02 was formed together with Yl23 phase when the starting composition was Ba-rich ($YBa_{2.3}$ $Cu_3$ $O_{x}$). The epitaxially grown Yl23 phase was formed at 760-$810^{\circ}C$ and $P_{O2}$=0.29-0.91 Torr.r.r.r.

• Clean Technology
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• v.8 no.1
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• pp.53-59
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• 2002

$Cu-CeO_2$ catalysts were prepared by co-precipitation and liquid phase oxidation (CP-LPO) and the prepared catalysts were examined as selective oxidation of carbon monoxide catalysts for the application of fuel cell vehicles. The prepared $Cu-CeO_2$ catalysts showed high reaction activity, but it was hard to find the correlation between the amount of Cu loaded and the reaction activities. As increase of the amount of Cu loaded, the micro pore structure of the catalyst was changed. It is due to the formation of solid solution between Cu and $CeO_2$. During pretreatment, the catalyst formed the solid-solution of Cu-Ce-O, resulting in the improvement of catalytic activity.

• Journal of Powder Materials
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• v.12 no.3
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• pp.192-200
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• 2005

Ultrafine copper powder was prepared from $CuO-H_2O$ slurry with hydrazine, a reductant, under $70^{\circ}C$. The influence of various reaction parameters such as temperature, reaction time, molar ratio of $N_2H_4$, PvP and NaOH to Cu in aqueous solution had been studied on the morphology and powder phase of Cu powders obtained. The production ratio of Cu from CuO was increased with the ratio of $N_2H_4/Cu$ and the temperature. When the ratio of $N_2H_4/Cu$ was higher than 2.5 and the temperature was higher than $60^{\circ}C$, CuO was completely reduced into Cu within 40 min. The crystalline size of Cu obtained became fine as the temperature increase, whereas the aggregation degree of particles was increased with the reaction time. The morphology of Cu powder depended on that of the precursor of CuO and processing conditions. The average particle size was about $0.5{\mu}m$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.142-142
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• 2011

Epitaxial $CuCrO_2$ thin films have been grown on single crystal substrate of c-plane $Al_2O_3$, $SrTiO_3$, YSZ and Quarts by laser ablation of a $CuCrO_2$ target using 266nm radiation from a Nd:YAG laser. X-ray measurements indicate that the $CuCrO_2$ grows epitaxially on all substrate, with its orientation dependent on the kinds of substrates. Most of the layer were polycrystalline with (001), (015) and random as the dominant surface orientation on c-plane YSZ, $SrTiO_3$ and quarts substrate, respectively. (001) orientated $CuCrO_2$ grows on C-plane $Al_2O_3$ and YSZ substrate, (015) orientated $CuCrO_2$ films are found on c-plane $SrTiO_3$ substrate and random orientated $CuCrO_2$ films grows on quarts substrate. These data are compared with the in-plane orientation and the mismatch of the $CuCrO_2$ and each substrate lattices in an attempt to relate the preferred orientation to the plane of the sapphire on which it is grown. Further characterization show that the grain size of the films increases for a substrate temperature increase, whereas the electrical properties of $CuCrO_2$ thin films depend upon their crystalline orientation.

• Korean Journal of Materials Research
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• v.29 no.1
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• pp.1-6
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• 2019

Recent industrialization has led to a high demand for the use of fossil fuels. Therefore, the need for producing hydrogen and its utilization is essential for a sustainable society. For an eco-friendly future technology, photoelectrochemical water splitting using solar energy has proven promising amongst many other candidates. With this technique, semiconductors can be used as photocatalysts to generate electrons by light absorption, resulting in the reduction of hydrogen ions. The photocatalysts must be chemically stable, economically inexpensive and be able to utilize a wide range of light. From this perspective, cuprous oxide($Cu_2O$) is a promising p-type semiconductor because of its appropriate band gap. However, a major hindrance to the use of $Cu_2O$ is its instability at the potential in which hydrogen ion is reduced. In this study, gold is used as a bottom electrode during electrodeposition to obtain a preferential growth along the (111) plane of $Cu_2O$ while imperfections of the $Cu_2O$ thin films are removed. This study investigates the photoelectrochemical properties of $Cu_2O$. However, severe photo-induced corrosion impedes the use of $Cu_2O$ as a photoelectrode. Two candidates, $TiO_2$ and $SnO_2$, are selected for the passivation layer on $Cu_2O$ by by considering the Pourbaix-diagram. $TiO_2$ and $SnO_2$ passivation layers are deposited by atomic layer deposition(ALD) and a sputtering process, respectively. The investigation of the photoelectrochemical properties confirmed that $SnO_2$ is a good passivation layer for $Cu_2O$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.119-120
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• 2011

Kawazoe는 1997년 p-type TOS를 만들기 위해서는 3가지가 충족되어야 한다고 언급한바 있다. 첫 번째, 가시광영역에서 투명하기 위해서 cation의 d10s0이 가득 차야 한다. 가득 차지 않은 d10 shell은 광 흡수가 가능하여 투과도를 떨어뜨린다. N-type을 예로 들어 ZnO, TiO, In2O3가 각각 Zn2+, Ti4+, In3+가 되어 d shell을 가득 차게 만드는 것을 볼 수 있다. 두 번째, cation d10s0 shell은 산소의 2p shell과 overlap 되어야 한다. 이 valence band는 홀 전도를 더욱 좋게 한다. 예를 들어 Cu1+(3d), Ag1+(4d)가 해당한다. 세 번째로, 양이온과 산소간의 공유결합을 강하게 하기 위해서 결정학적 구조는 매우 중요하다. Delafossite 구조는 산소가 pseudo-tetrahedral 구조로서 공유결합에 유리하다. 이러한 환경은 O2- (2p6)을 형성하고 홀의 이동도를 증가시킨다. 예를 들어 Cu2O의 경우 앞의 2가지를 만족시키지만 광학적 특성에서 좋지 않다. 그 이유가 3번째 언급한 결정학적인 요인에 있다. 결정 계의 환경은 Cu2O를 따라가면서 3차원적인 연결을 2차원적으로 변형된 delafossite 구조에서는 quantum well이 형성되어 band gap이 커진다. 본 연구에서는 전기적 이방성을 가지고 있는 delafossite CuCrO2 상에서 우선배향을 일으키는 인자 중 기판을 변화시켜 실험을 진행하였다. 결과적으로 기판변화를 통해 우선배향조절이 가능하였으며 CuCrO2 박막을 시켰으며, 결정방향에 따른 전기적 물성의 이방성에 관한 연구는 계속 진행 중에 있다. c-plane sapphire 기판위에는 [00l]로 성장하는 반면, c-plane STO 기판 위에는 [015] 방향으로 성장하는 것을 확인하였다. 이러한 원인은 기판과 증착되는 박막간의 mismatch를 최소화 하여 strain을 줄이고, 계면에서의 Broken boning 수를 줄여 계면에너지를 낮추는 방법이기 때문일 것으로 예상된다. C-plane sapphire 기판위에 증착될 경우 증착온도가 증가함에 따라 c-축으로의 성장이 온전해지며 이에 따라 캐리어농도의 감소와 모빌리티의 증가가 급격하게 변하는 것을 확인할 수 있다. 반면 c-plane STO 기판에서는 증착온도에 따른 박막의 배향변화가 없으며 전기적 물성 변화 또한 비교적 작은 것을 간접적으로 확인하였다.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.790-794
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• 2004

Ultra-fine Copper particles for a conductive paste in electric-electronic field were prepared using wet-reduction process with hydrazine hydrate ($N_{2}H_4{\cdot}H_{2}O$) as a reductor. The effect of reaction conditions such as the amount of dispersion ($Na_{4}O_{7}P_2{\cdot}10H_{2}O$) and reductor ($N_{2}H_4{\cdot}H_{2}O$) on the particle size and shape for the prepared Cu powders was investigated. The quantity of dispersion and reductor varied from 0 to 0.0025 M and from 5 to 40 ml at a reaction temperature of $70^{\circ}C$, respectively. The particle size, shape, and structure for the obtained Cu particles were characterized by means of XRD, SEM, TEM, EDS and TGA. The aggregation of Cu particles was reduced with relatively increasing of the amount of dispersion at fixed other reaction conditions. The smaller Cu particle with size of approximately 300nm was obtained from 0.032 M $CuSO_4$ with adding of 0.0025 M $Na_{4}O7P_2{\cdot}10H_{2}O$ and 40ml $N_{2}H_4{\cdot}H_{2}O$ at a reaction temperature of $70^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.245-245
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• 2009

l-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Copper oxide(CuO) has been realized as a p-type metal oxide semiconductor with narrow band gap of 1.2 -1.5eV. Copper oxide nanostructures can be synthesized by various growth method such as oxidation reaction, thermal evaporation thermal decomposition, sol-gel. and Mostly CuO nanowire prepared on the Cu substrate such as Copper foil, grid, plate. In this study, CuO NWs were grown by thermal oxidation (at various temperatures in air (1 atm)) of Cu metal deposited on CuO (20nm)/$SiO_2$(250nm)/Si. A 20nm-thick CuO layer was used as an adhesion layer between Cu metal and $SiO_2$

• Transactions of the Korean hydrogen and new energy society
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• v.18 no.1
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• pp.32-39
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• 2007

CO oxidation and selective CO oxidation of $La_xCe_{1-x}Co_yCu_{1-y}O_{3-{\alpha}}$ perovskite(x=1, 0.9, 0.7. 0.5; y=1, 0.9, 0.7, 0.5) were investigated. For CO oxidation, catalytic activities were studied according to different preparation conditions such as pH and calcination temperature. The influence of the change of the $O_2$ concentration for selective CO oxidation was studied, too. The substitution of Ce for La improved the catalytic activity for CO oxidation and selective CO oxidation and best activity was observed for $La_{0.7}Ce_{0.3}CoO_3$ prepared at pH 11 and calcined at $600^{\circ}C$. The temperature of 90% CO conversion for CO oxidation using $La_{0.7}Ce_{0.3}CoO_3$ was $230^{\circ}C$. In contrast to the enhancement effect by Ce substitution, the partial substitution of Cu for Co in $LaCo_yCu_{1-y}O_{3-{\alpha}}$ decreased catalytic activities for CO oxidation reaction compared to that using $LaCoO_3$. For selective CO oxidation, the best CO conversion was 66% at $230^{\circ}C$ for $La_{0.7}Ce_{0.3}CoO_3$. The CO conversion of $La_{0.7}Ce_{0.3}CoO_3$ was greatly increased from 66% to 91% as increasing $O_2$ concentration from 1% to 2%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.205-209
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• 2016

In this paper, piezoelectric ceramics with the composition of $(Na_{0.525}K_{0.4425}Li_{0.0375})(Nb_{0.8975}Sb_{0.065}Ta_{0.0375})O_3+0.3wt%\;CoO+x\;CuO$ ($0.005{\leq}x{\leq}0.025$) (abbreviated to NKL-NST) were fabricated for ultrasonic sensor application. The effects of CuO addition and sintering on the microstructure and the piezoelectric properties of the NKL-NST ceramics were systematically studied. Excellent piezoelectric properties such as electromchanical coupling $factor(k_p)=0.415$, piezoelectric constant $(d_{33})=166pC/N$ and piezoelectric figure of merit $d_{{33}*}g_{33}=5.47pm^2/N$ were obtained from the 2.5 mol% CuO doped NKL-NST+0.3 wt%CoO ceramics sintered at $1,000^{\circ}C$ for 3 h.