• Title/Summary/Keyword: ozone and temperature

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Performance of Alternative Refrigerants for R12 and R134a in Automobile Air-Conditioners (자동차 공조기용 R12 및 R134a 대체 냉매의 성능평가)

  • Baek, In-Cheol;Park, Ki-Jung;Shim, Yun-Bo;Jung, Dong-Soo
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.19 no.5
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    • pp.403-410
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    • 2007
  • In this study, natural refrigerants and their mixtures that can supplement and replace R12 and R134a in automobile air-conditioners are studied. R134a is currently used as the refrigerant in new motor vehicle air conditioners, replacing the ozone depleting refrigerant R12. Although R134a has no ozone depletion potential, it has a relatively large global warming potential, approximately 1300 times that of $CO_2$ over a 100 year time horizon. For this reason, performance of natural refrigerants and their mixtures containing R152a, RE170 (Dimethylether, DME) and R600a (Isobutane) are measured under 2 different temperature conditions. They were tested in a refrigerating bench tester with an open type compressor. The test bench provided about 4 kW capacity and water and water/glycol mixture were employed as the secondary heat transfer fluids. Test results show that the coefficient of performance (COP) of these refrigerants is up to 21.55% higher than that of R12 in all temperature conditions. Overall, these fluids provide good performance with reasonable energy savings without any environmental problem and thus can be used as long term alternatives for automobile air-conditioners.

NiOx-based hole injection layer for organic light-emitting diodes (유기발광소자에 적용 가능한 NiOx 기반의 정공주입층 연구)

  • Kim, Junmo;Gim, Yejin;Lee, Wonho;Lee, Donggu
    • Journal of Sensor Science and Technology
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    • v.30 no.5
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    • pp.309-313
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    • 2021
  • Organic semiconductors have received tremendous attention for their research because of their tunable electrical and optical properties that can be achieved by changing their molecular structure. However, organic materials are inherently unstable in the presence of oxygen and moisture. Therefore, it is necessary to develop moisture and air stable semiconducting materials that can replace conventional organic semiconductors. In this study, we developed a NiOx thin film through a solution process. The electrical characteristics of the NiOx thin film, depending on the thermal annealing temperature and UV-ozone treatment, were determined by applying them to the hole injection layer of an organic light-emitting diode. A high annealing temperature of 500 ℃ and UV-ozone treatment enhanced the conductivity of the NiOx thin films. The optimized NiOx exhibited beneficial hole injection properties comparable those of 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN), a conventional organic hole injection layer. As a result, both devices exhibited similar power efficiencies and the comparable electroluminescent spectra. We believe that NiOx could be a potential solution which can provide robustness to conventional organic semiconductors.

$In_2O_3$ Thin Film Ozone Sensor Prepared by Sol-Gel Method (졸-겔법을 이용한 $In_2O_3$ 박막의 오존 센서)

  • Lee, Yun-Su;Song, Kap-Duk;Choi, Nak-Jin;Joo, Byung-Su;Kang, Bong-Hwi;Lee, Duk-Dong
    • Journal of Sensor Science and Technology
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    • v.10 no.2
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    • pp.101-107
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    • 2001
  • A highly selective, sensitive and reliable ozone sensing $In_2O_3$ thin film was fabricated by a sol-gel method. The fabricated film is operated at a relatively lower temperature than ever developed thin films and saved operating power. $In_2O_3$ films deposited by sol-gel technique has been recently attracted because it is an economical and energy saving method and precisely controlled microstructure. Indium alkoxide precursor was synthesized from the reaction between indium hydroxide and butanol. PVA binder was used to improve adhesion of the films. The $In_2O_3$ thin films were obtained by spin coating from 1 to 5 times followed by drying at $100^{\circ}C$ and calcining at $600^{\circ}C$ for 1h. The film thickness was controlled by the number of coating time. The morphology and the thickness of the $In_2O_3$ films were examined by a SEM and XRD. The $In_2O_3$ thin films show a high sensitive to ozone gas at operating temperature of $250^{\circ}C$. The $In_2O_3$ sensor has very good selectivity to $CH_4$, CO, $C_4H_{10}$ and ethanol.

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Phase Stability of Bi2212 and Bi2223 Thin Films Fabricated by Ion Beam Sputtering

  • Lee, Hee-Kab;Park, Yong-Pil;Kim, Jeong-Ho
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2000.11a
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    • pp.108-111
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    • 2000
  • Bi2212 and Bi2223 thin films are fabricated by ion beam sputtering method. Three phases of Bi2201, Bi2212 and Bi2223 appear as stable ones in spite of the condition for thin film fabrication of Bi2212 and bi2223 compositions, depending on substrate temperature(T$\sub$sub/) and ozone pressure (PO$_3$). It is found out that these phases show similar T$\sub$sub/ and PO$_3$dependence, and that the stable regions of these phases are limited within very narrow temperature.

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Phase Stability of Bi2212 and Bi2223 Thin Films Fabricated by ion Beam Sputtering

  • Lee, Hee-Kab;Park, Yong-Pil;Kim, Jeong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.108-111
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    • 2000
  • Bi2212 and Bi2223 thin films are fabricated by ion beam sputtering method. Three phases of Bi2201, Bi2212 and Bi2223 appear as stable ones in spite of the condition for thin film fabrication of Bi2212 and bi2223 compositions, depending on substrate temperature(T$\sub$sub/) and ozone pressure (PO$_3$). It is found out that these phases show similar T$\sub$sub/ and PO$_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

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Phase Stability Region of Bi-superconductor Thin Films Prepared by IBS Technique (이온빔 스퍼터법으로 제작한 Bi 초전도 박막의 상안정 영역)

  • Lim, Jung-Kwan;Chun, Min-Woo;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.308-311
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    • 2001
  • Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature($T_{sub}$) and ozone pressure( $PO_3$ ). It is found out that these phases show similar $T_{sub}$ and $PO_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

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A Study on the Formation of Single Crystal in BiSrCaCuO Thin Films (BiSrCaCuO 박막의 단결정 형성에 관한 연구)

  • Cheon, Min-Woo;Yang, Sung-Ho;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11b
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    • pp.39-42
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    • 2004
  • Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature(Tsub) and ozone pressure(PO3). It is found out that these phases show similar Tsub and PO3 dependence, and that the stable regions of these phases are limited within very narrow temperature.

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Phase Stability Region of Bi-superconductor Thin Films Prepared by IBS Technique (이온빔 스퍼터법으로 제작한 Bi 초전도 박막의 상안정 영역)

  • 임중관;천민우;박용필
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.308-311
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    • 2001
  • Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature($T_{sub}$) and ozone pressure(PO$_3$). It is found out that these phases show similar $T_{sub}$ and PO$_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

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A Study on Fluxless Soldering using Solder Foil (솔더 포일을 이용한 무플럭스 솔더링에 관한 연구)

  • 신영의;김경섭
    • Journal of Welding and Joining
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    • v.16 no.5
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    • pp.100-107
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    • 1998
  • This paper describes fluxless soldering of reflow soldering process using solder foil instead of solder pastes. There is an increasing demand for the reliable solder connection in the recent high density microelectronic components technologies. And also, it is problem fracture of an Ozone layer due to freon as which is used to removal of remained flux on the substrate. This paper discussed joining phenomena, boudability and joining processes of microelectronics devices, such as between outer lead of VLSI package and copper pad on a substrate without flux. The shear strength of joints is 8 to 13 N using Sn/Pb (63/37 wt.%) solder foil with optimum joining conditions, meanwhile, in case of using Sn/In (52/48 wt.%) solder foil, it is possible to bond with low heating temperature of 550 K, and accomplish to high bonding strength of 25N in condition heating temperature of 650K. Finally, this paper experimentally shows fluxless soldering using solder foil, and accomplishes key technology of microsoldering processes.

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Phase Diagram of Single Crystal in Bi System (Bi계 초전도 박막의 단결정 생성영역)

  • Cheon, Min-Woo;Kim, Tae-Gon;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.327-328
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    • 2005
  • Bi-system thin films are prepared by ion beam sputtering technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature($T_{sub}$) and ozone pressure($PO_3$). It is found out that these phases show similar $T_{sub}$ and $PO_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

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