• Progress in Superconductivity and Cryogenics
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• v.11 no.1
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• pp.5-8
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• 2009

MgO nanodots have been deposited and formed on top of the substrate surface. Mg was sputtered to form the MgO nanodots on the single crystal substrates by rf-sputtering method and followed by heat treatment in the oxygen ambient. The deposition and formation of MgO nanodots have been controlled systematically using the process variables such as substrate temperature, sputtering time, and rf-power. As the substrate temperature increased from the room temperature the density of MgO nanodots decreased. The optimal conditions of MgO nanodots formation using the rf-sputtering was investigated and the maximum density of more than $230/{\mu}m^2$ on single crystal substrates was obtained when the rf-power of 100 watts was applied for 30 seconds at room temperature. The typical size of MgO nanodots was identified to be <160 nm(diameter) and 4-30nm (height) by atomic force microscopy. The modulated surface morphology was examined through surface images and cross-section analysis and discussed for the artificial pinning sites in the superconducting films.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.300-304
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• 1999

To tap the feasibility of exploiting the 2$^{nd}$ phases as flux-pinning centers in the (Bi,Pb)$_2Sr_2Ca_2CuO_{10}$ superconductor, the size and the distribution of the precipitates have been controlled by changing reaction temperature and time, oxygen partial pressure Po$_2$ and annealing condition. Various annealing heat treatments were also conducted on the as-received 61 filament Bi-2223 tapes with Bi$_{1.8}Pb_{0.4}Sr_2Ca_{2.2}Cu_3O_8$ starting composition and annealed specimen were analyzed with XRD, SEM, EDS and TEM.. The grain size of (Ca,Sr)$_2$(BiPb)O$_4$ or Bi$_{0.5}Pb_3Sr_2Ca_2CuO_{\delta}$ was controllable by optimizing the heat treatment condition and critical current density (J$_c$) showed dependence on the size of the 2$^{nd}$ phases.

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.900-904
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• 1992

High temperature electrical conductivity was measured for perovskite La0.98Sr0.02MnO3 at 200~130$0^{\circ}C$ as a function of Po2 and 1/T. Perovskite La1-xSrxMnO3 system is the typical oxygen electrode in solid oxide fuel cell (SOFC). Acetate precursors were used for the preparation of mixed water solution and the calcined powders were reacted with Na2CO3 flux in order to obtain highly reactive powders of perovskite La0.98Sr0.02MnO3. The relative density was greatly increased above 90% because of the homogeneous sintering. From the conductivity ($\sigma$)-temperature and conductivity-Po2 at constant temperature, the defect structure of La0.98Sr0.02MnO3 was discussed. From the slope of 1n($\sigma$) vs 1/T, the activation energy of 0.069 and 0.108eV were evaluated for above 40$0^{\circ}C$, respectively. From the relationship between $\sigma$ and Po2, it was found that the decomposition of La0.98Sr0.02MnO3 was occurred at 10-15.5 atm(97$0^{\circ}C$) and 10-11 atm(125$0^{\circ}C$). It is supposed that the improvement of p-type conductivity may be leaded by the increase of Mn4+ concentration through the substitution of divalent/monovalent cations for La site in LaMnO3.

• Membrane Journal
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• v.21 no.2
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• pp.155-162
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• 2011

Dense tubular $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ (BSCF) membranes were prepared by extrusion technique. The phase structure of the $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ membranes was characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). Relative density of $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ tubular membrane was 94.10%. Oxygen permeation was measured at difference operating condition of feed side and permeate side in the temperature range from 700 to $950^{\circ}C$. The oxygen permeation flux of dense tubular $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ membrane reached maximum 1.37 mL/$min{\cdot}cm^2$ at $900^{\circ}C$ exposed to ambient air (feed side) and vacuum pump (permeate side).

• Journal of Environmental Science International
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• v.13 no.12
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• pp.1089-1102
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• 2004

Seasonal variation of biogeochemical characteristics was determined in Lake Shihwa from October 2002 to August 2003. When the lake was artificially constructed for the freshwater reservoir in 1988, the development of the strong haline density stratification resulted in two-layered system in water column and hypoxic/anoxic environment prevailed in the bottom layer due to oxidation of accumulated organic matters in the lake. Recently, seawater flux to the lake through the sluice has been increased to improve water quality in the lake since 2000, but seasonal stratification and hypoxic bottom layer of the lake still developed in the summer due to the nature of artificially enclosed lake system. As the lake is still receiving tremendous amount of organic matters and other pollutants from neighboring streams during the rainy summer season, limited seawater flux sluicing into the lake may not be enough for the physical and biogeochemical mass balance especially in the summer. The excess of accumulated organic matters in the bottom layer apparently exhausted dissolved oxygen and affected biogeochemical distributions and processes of organic and inorganic compounds in the stratified two-layered environment in the summer. During the summer, ammonia and dissolved organic carbon remarkably increased in the bottom layer due to the hypoxic/anoxic condition in the bottom layer. Phosphate also increased as the result of benthic flux from the bottom sediment. Meanwhile, dissolved organic carbon showed the highest value at the upstream area and decreased along the salinity gradient in the lake. In addition to the sources from the upstream, autochthonous origin of particulate organic carbon from algal bloom in the lake might be more important for sustaining aggravated water quality and development of deteriorated bottom environment in the summer. The removal of trace metals could be attributed to scavenging by strong insoluble metal-sulfide compounds in the hypoxic/anoxic bottom layer in the summer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.67-67
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• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.105-105
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• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• Journal of the Korean Electrochemical Society
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• v.6 no.1
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• pp.59-64
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• 2003

We fabricated mixed ionic-electronic conducting membranes, $CH_4\;Using\;{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_{3-\delta}$, by solid state reaction method for solid oxide fuel cell. The membranes consisted of single perovskite phase and exhibited high relative density, $>95\%$. We coated $La_{0.6}Sr_{0.4}CoO_{3-\delta}$ layer using screen printing method in order to improve surface reactivity of the $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_{3-\delta}$. As a result, the oxygen permeation flux of the coated $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_{3-\delta}$ showed higher value, $0.5ml/min{\cdot}cm^2\;at\;950^{\circ}C$ than the uncoated one. Higher oxygen permeation was observed in the porously coated Lao $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_{3-\delta}$membranes with larger grain sizes. Syngas, $CO+H_2$, was successfully obtained from methane gas, $CH_4$, using the $La_{0.6}Sr_{0.4}CoO_{3-\delta}$ coated $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_{3-\delta}$, with over $40\%\;of\;CH_4$ conversion and syngas yield. $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_{3-\delta}$ membrane was stable even when it was exposed to the reducing environment, methane, for 600 hrs at $950^{\circ}C$.