• Title/Summary/Keyword: oxide removal

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Adsorptive removal of atmospheric pollutants over Pyropia tenera chars

  • Lee, Heejin;Park, Rae-su;Lee, Hyung Won;Hong, Yeojin;Lee, Yejin;Park, Sung Hoon;Jung, Sang-Chul;Yoo, Kyung-Seun;Jeon, Jong-Ki;Park, Young-Kwon
    • Carbon letters
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    • v.19
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    • pp.79-88
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    • 2016
  • As a replacement for activated carbon, biochar was synthesized and used for the adsorptive removal of formaldehyde and nitrogen oxide. Biochar was produced from the fast pyrolysis of the red marine macro alga, Pyropia tenera. The P. tenera char was then activated with steam, ammonia and KOH to alter its characteristics. The adsorption of formaldehyde, which is one of the main indoor air pollutants, onto the seaweed char was performed using 1-ppm formaldehyde and the char was activated using a range of methods. The char activated with both the KOH and ammonia treatments showed the highest adsorptive removal efficiency, followed by KOH-treated char, ammonia-treated char, steam-treated char, and non-activated char. The removal of 1000-ppm NO over untreated char, KOH-treated char, and activated carbon was also tested. While the untreated char exhibited little activity, the KOH-treated char removed 80% of the NO at 50℃, which was an even higher NO removal efficiency than that achieved by activated carbon.

Removal of Arsenic in Synthesis Method and Characteristics of Fe(III)-ettringite (비소제거를 위한 Fe(III)-ettringite 합성방법 및 특성 연구)

  • Hong, Seong-Hyeok;Park, Hye-Min;Choi, Won-Ho;Park, Joo-Yang
    • Journal of Korean Society of Water and Wastewater
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    • v.25 no.1
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    • pp.15-21
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    • 2011
  • Arsenic is one of the most abundant contaminant found in waste mine tailings, because of it's carcinogenic property, the countries like United states of America and Europe have made stringent regulations which govern the concentration of arsenic in drinking water. The current study focuses on different treatment methods for removal of arsenic from waste water. Treatment method the high strength arsenic waste water is treated with Fe(III)-ettringite by co-precipitation method. Number of experiments were carried out to decide the optimal dosage of Fe(III)-ettringite to treat arsenic waste water. The Fe(III)-ettringite was synthesized by taking appropriate equivalent ratios of calcium oxide and ferric chloride in proportion to the arsenic. The best removal efficiencies of 94% were observed at a As/(Ca: Fe) ratio of 1:3. The maximum removal of arsenic was observed in pH range of 12. But as the pH increases the arsenic removal efficiency decreases as portlandite is formed in the pH above 12. The analysis of surface of precipitate conform the needle like structure of ettringite. This treatment technique has promising features such as, the chemicals required in the treatment as well as the sludge generated can be reduced. The operating pH range is in alkaline region which is advantageous over traditional treatment process which has lower pH. Also the co-precipitation not only helps in removal of arsenic but also heavy metals.

Phosphate Removal from Aqueous Solution by Aluminum (Hydr)oxide-coated Sand

  • Han, Yong-Un;Park, Seong-Jik;Park, Jeong-Ann;Choi, Nag-Choul;Kim, Song-Bae
    • Environmental Engineering Research
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    • v.14 no.3
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    • pp.164-169
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    • 2009
  • A powder form of aluminum (hydr)oxides is not suitable in wastewater treatment/filtration systems because of low hydraulic conductivity and large sludge production. In this study, aluminum (hydr)oxide-coated sand (AOCS) was used to remove phosphate from aqueous solution. The properties of AOCS were analyzed using a scanning electron microscopy (SEM) combined with an energy dispersive X-ray spectrometer (EDS) and an X-ray diffractometer (XRD). Kinetic batch, equilibrium batch, and closed-loop column experiments were performed to examine the adsorption of phosphate to AOCS. The XRD pattern indicated that the powder form of aluminum (hydr)oxides coated on AOCS was similar to a low crystalline boehmite. Kinetic batch experiments demonstrated that P adsorption to AOCS reached equilibrium after 24 h of reaction time. The kinetic sorption data were described well by the pseudo second-order kinetic sorption model, which determined the amount of P adsorbed at equilibrium ($q_e$ = 0.118 mg/g) and the pseudo second-order velocity constant (k = 0.0036 g/mg/h) at initial P concentration of 25 mg/L. The equilibrium batch data were fitted well to the Freundlich isotherm model, which quantified the distribution coefficient ($K_F$ = 0.083 L/g), and the Freundlich constant (1/n = 0.339). The closed-loop column experiments showed that the phosphate removal percent decreased from 89.1 to 41.9% with increasing initial pH from 4.82 to 9.53. The adsorption capacity determined from the closed-loop experiment was 0.239 mg/g at initial pH 7.0, which is about two times greater than that ($q_e$ = 0.118 mg/g) from the kinetic batch experiment at the same condition.

Effect of Cerium Ammonium Nitrate and Alumina Abrasive Particles on Polishing Behavior in Ruthenium Chemical Mechanical Planarization (Ruthenium CMP에서 Cerium Ammonium Nitrate와 알루미나 연마 입자가 연마 거동에 미치는 영향)

  • Lee, Sang-Ho;Lee, Sung-Ho;Kang, Young-Jae;Kim, In-Kwon;Park, Jin-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.9
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    • pp.803-809
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    • 2005
  • Cerium ammonium nitrate (CAN) and nitric acid was used an etchant and an additive for Ru etching and polishing. pH and Eh values of the CAN and nitric acid added chemical solution satisfied the Ru etching condition. The etch rate increased linearly as the concentration of CAN increased. Nitric acid added solution had the high etch rate. But micro roughness of etched surfaces was not changed before and after etching, The removal rate of Ru film was the highest in $1wt\%$ abrasive added slurry, and not increased despite the concentration of alumina abrasive increased to $5wt\%$. Even Ru film was polished by only CAN solution due to the friction. The highest removal rate of 120nm/min was obtained in 1 M nitric acid and $1wt\%$ alumina abrasive particles added slurry. The lowest micro roughness value was observed in this slurry after polishing. From the XPS analysis of etched Ru surface, oxide layer was founded on the etched Ru surface. Therefore, Ru was polished by chemical etching of CAN solution and oxide layer abrasion by abrasive particles. From the result of removal rate without abrasive particle, the etching of CAN solution is more dominant to the Ru CMP.

Application of Gas to Particle Conversion Reaction to increase the DeSOx/DeNOx Efficiency under Pulsed Corona Discharge (DeSOx/DeNOx 효율 개선을 위한 펄스 코로나 방전하에서 기체미립자 전환반응의 적용)

  • Choi, Yu-ri;Kim, Dong-Joo;Kim, Kyo-Seon
    • Journal of Industrial Technology
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    • v.18
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    • pp.249-258
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    • 1998
  • In this paper, we investigated the post-combustion removal of nitrogen oxide($NO_x$) and sulfur oxide($SO_x$) which is based on the gas to particle conversion process by the pulsed corona discharge. Under normal pressure, the pulsed corona discharge produces the energetic free electrons which dissociate gas molecules to form the active radicals. These radicals cause the chemical reactions that convert $SO_x$ and $NO_x$ into acid mists and these mists react with $NH_3$ to form solid particles. Those particles can be removed from the gas stream by conventional devices such as electrostatic precipitator or bag filter. The reactor geometry was coaxial with an inner wire discharge electrode and an outer ground electrode wrapped on a glass tube. The simulated flue gas with $SO_x$ and $NO_x$ was used in the experiment. The corona discharge reactor was more efficient in removing $SO_x$ and $NO_x$ by adding $NH_3$ and $H_2O$ in the gas stream. We also measured the removal efficiency of $SO_x$ and $NO_x$ in a cylinder type corona discharge reactor and obtained more than 90 % of removal efficiency in these experimental conditions. The effects of process variables such as the inlet concentrations of $SO_x$, $NH_3$ and $H_2O$, residence time, pulse frequencies and applied voltages were investigated.

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Thermal oxidation effect for sidewall roughness minimization of hot embossing master for polymer optical waveguides (고분자 광도파로용 핫엠보싱 마스터의 표면거칠기 최소화를 위한 열산화 영향)

  • 최춘기;정명영
    • Journal of the Korean Vacuum Society
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    • v.13 no.1
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    • pp.34-38
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    • 2004
  • Hot embossing master is indispensable for the fabrication of polymeric optical waveguides using hot embossing technology. Sidewall roughness of silicon master is directly related to optical loss of optical waveguides In this paper, a silicon master was fabricated by using a deep-RIE process. Additionally, thermal oxidation followed by oxide removal was carried out to minimize etched Si sidewall roughness. Thermal oxidation and oxide removal were performed with $H_2O_2$ atmosphere at $1050^{\circ}C$ and $NH_4$F:HF=6:l BOE, respectively, for the oxide thickness of 400$\AA$, 1000$\AA$, 3000$\AA$, 4500$\AA$, 5600$\AA$ and 6200$\AA$. The sidewall roughness was characterized by SEM and SPM-AFH measurements. We found that the roughness was improved from 12nm (RMS) to 6nm (RMS) for the scalloped sidewall and from 162nm (RMS) to 39nm (RMS) for the vertical striation sidewall, respectively.

Formation of ultra-shallow $p^+-n$ junction through the control of ion implantation-induced defects in silicon substrate (이온 주입 공정시 발생한 실리콘 내 결함의 제어를 통한 $p^+-n$ 초 저접합 형성 방법)

  • 이길호;김종철
    • Journal of the Korean Vacuum Society
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    • v.6 no.4
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    • pp.326-336
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    • 1997
  • From the concept that the ion implantation-induced defect is one of the major factors in determining source/drain junction characteristics, high quality ultra-shallow $p^+$-n junctions were formed through the control of ion implantation-induced defects in silicon substrate. In conventional process of the junction formation. $p^+$ source/drain junctions have been formed by $^{49}BF_2^+$ ion implantation followed by the deposition of TEOS(Tetra-Ethyl-Ortho-Silicate) and BPSG(Boro-Phospho-Silicate-Glass) films and subsequent furnace annealing for BPSG reflow. Instead of the conventional process, we proposed a series of new processes for shallow junction formation, which includes the additional low temperature RTA prior to furnace annealing, $^{49}BF_2^+/^{11}B^+$ mixed ion implantation, and the screen oxide removal after ion implantation and subsequent deposition of MTO (Medium Temperature CVD oxide) as an interlayer dielectric. These processes were suggested to enhance the removal of ion implantation-induced defects, resulting in forming high quality shallow junctions.

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Interaction of Nitric Oxide and Renin Angiotensin System in Pulmonary Arterial Circulation of RHR

  • Lee, Byung-Ho;Shin, Hwa-Sup
    • Archives of Pharmacal Research
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    • v.20 no.5
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    • pp.389-395
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    • 1997
  • We investigated the interaction between nitric oxide and the renin angiotensin system in regulating isolated pulmonary arterial tension and pulmonary arterial pressure (PAP) in renal hypertensive rats (RHR) made by complete ligation of left renal artery. Losartan induced a depressor response that was smaller in RHR than in normotensive rats (NR) (3.3 and 7.0 mmHg, respectively, at 3.0 mg/kg, p<0.05), and the response was significantly reduced by $N^{G}$-nitro-Larginine methyl ester (L-NAME). Angiotensin II elevated the PAP (7.6 and 10.8 mmHg at $0.1 {\mu}g/kg$; 20.3 and 23.6 mmHg at $1.0{\mu}g/kg$, respectively) and contracted the isolated pulmonary artery ($pD_2$: 8.79 and 8.71, respectively) from both NR and RHR with similar magnitude, and these effects were significantly enhanced by L-NAME in NR, but not in RHR. Acetylcholine lowered the PAP slightly less effectively in RHR than in NR (3.8 and 6.0 mmHg at 10 .mu.g/kg, respectively) and relaxed the pulmonary artery precontracted with norepinephrine in both rats with similar magnitude ($E_max$: 60.8 and 63.6%, respectively), and the effect being completely abolished after pretreatment.with L-NAME or removal of endothelial cells. These results suggest that nitric oxide interacts with renin angiotensin system to control the pulmonary vascular tension and pulmonary arterial circulation of RHR.R.

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Applications to Thin Film Processing to Solid Oxide Fuel Cells

  • Kim, Eui-Hyun;Hwang, Hee-Su;Ko, Myeong-Hee;Hwang, Jin-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.696-696
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    • 2013
  • Solid Oxide Fuel Cells (SOFCs) have been gaining academic/industrial attention due to the unique high efficiency and minimized pollution emission. SOFCs are an electrochemical system composed of dissimilar materials which operates at relatively high temperatures ranging from 800 to 1000oC. The cell performance is critically dependent on the inherent properties and integration processing of the constituents, a cathode, an electrolyte, an anode, and an interconnect in addition to the sealing materials. In particular, the gas transport, ion transport, and by-product removal also affect the cell performance, in terms of open cell voltages, and cell powers. In particular, the polarization of cathode materials is one of the main sources which affects the overall function in SOFCs. Up to now, there have been studies on the materials design and microstructure design of the component materials. The current work reports the effect of thin film processing on cathode polarization in solid oxide fuel cells. The polarization issues are discussed in terms of dc- and ac-based electrical characterizations. The potential of thin film processing to the applicability to SOFCs is discussed.

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Characteristic of Oxide CMP with the Various Temperatures of Silica Slurry (실리카 슬러리의 온도 변화에 따른 산화막의 CMP 특성)

  • Ko, Pil-Ju;Park, Sung-Woo;Kim, Nam-Hoon;Seo, Yong-Jin;Chang, Eui-Goo;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.707-710
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    • 2004
  • Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). In this paper, we have investigated slurry properties and CMP performance of silicon dioxide (oxide) as a function of different temperature of slurry. Thermal effects on the silica slurry properties such as pH, particle size, conductivity and zeta potential were studied. Moreover, the relationship between the removal rate (RR) with WIWNU and slurry properties caused by changes of temperature were investigated. Therefore, the understanding of these temperature effects provides a foundation to optimize an oxide CMP Process for ULSI multi-level interconnection technology.

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