• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.145-151
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• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.

• 한국재료학회지
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• 제27권9호
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• pp.495-500
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• 2017

Oxide layers were formed by an environmentally friendly plasma electrolytic oxidation (PEO) process on AZ91 Mg alloy. PEO treatment also resulted in strong adhesion between the oxide layer and the substrate. The influence of the KF electrolytic solution and the structure, composition, microstructure, and micro-hardness properties of the oxide layer were investigated. It was found that the addition of KF instead of KOH to the $Na_2SiO_3$ electrolytic solution increased the electrical conductivity. The oxide layers were mainly composed of MgO and $Mg_2SiO_4$ phases. The oxide layers exhibited solidification particles and pancake-shaped oxide melting. The pore size and surface roughness of the oxide layer decreased considerably with an increase in the concentration of KF, while densification of the oxide layers increased. It is shown that the addition of KF to the basis electrolyte resulted in fabricating of an oxide layer with higher surface hardness and smoother surface roughness on Mg alloys by the PEO process. The uniform thickness of the oxide layer formed on the Mg alloy substrates was largely determined by the electrolytic solution with KF, which suggests that the composition of the electrolytic solution is one of the key factors controlling the uniform thickness of the oxide layer.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2005년도 Proceedings of The 6th korea-china joint workshop on nuclear waste management
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• pp.39-50
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• 2005

Electrolytic reduction of uranium oxide to uranium metal was studied in a $LiCl-Li_{2}O$ molten salt system. The reduction mechanism of the uranium oxide to a uranium metal has been studied by means of a cyclic voltammetry. Effects of the layer thickness of the uranium oxide and the thickness of the MgO on the overpotential of the cathode and the anode were investigated by means of a chronopotentiometry. From the cyclic voltamograms, the decomposition potentials of the metal oxides are the determining factors for the mechanism of the reduction of the uranium oxide in a $LiCl-3\;wt{\%} Li_{2}O$ molten salt and the two mechanisms of the electrolytic reduction were considered with regards to the applied cathode potential. In the chronopotentiograms, the exchange current and the transfer coefficient based on the Tafel behavior were obtained with regard to the layer thickness of the uranium oxide which is loaded into the porous MgO membrane and the thickness of the porous MgO membrane. The maximum allowable currents for the changes of the layer thickness of the uranium oxide and the thickness of the MgO membrane were also obtained from the limiting potential which is the decomposition potential of LiCl.

• 대한기계학회논문집A
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• 제27권3호
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• pp.335-342
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• 2003

In this study, the effects of oxide layer formed on the contact parts of TiN coated ball and steel disk in sliding are investigated. Also wear mechanism to from the oxide layer and the characteristics of the oxide layer formation are investigated. AISI 52100 steel ball is used for the substrate of coated ball specimens. Two types of coated ball specimens were prepared by depositing TiN coating with 1 and 4 ${\mu}{\textrm}{m}$ in coating thickness. AISI 1045 steel is used for the disk type counter-body. To investigate the effect of oxide layer on the contact parts of the two materials, the tests were performed both in air for forming oxide layer on the contact parts and in nitrogen environment to avoid oxidation. And to study the effects of surface roughness of counter-body, TiN coating thickness and contact load of sliding test on the characteristics of oxide layer formation on counter-body, various tests were carried out. From the results, the friction characteristics between the two materials was predominated by iron oxide layer that formed on wear track on counter-body and this layer caused the high friction. And the formation rate of the oxide layer on wear track increased as the real contact area between the two materials increased as the contact load increased, the TiN coating thickness decreased and the surface of counter-body smoothened.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2001년도 제34회 추계학술대회 개최
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• pp.109-116
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• 2001

In this study, the effects of oxide layer formed on the contact parts of TiN coated ball and steel disk in sliding are investigated. Also wear mechanism to form the oxide layer and the characteristics of the oxide layer formation are investigated. AIS152100 steel ball is used for the substrate of coated ball specimens. Two types of coated ball specimens were prepared by depositing TiN coating with 1 and 4um in coating thickness. AISI1045 steel is used for the disk type counter-body. To investigate the effect of oxide layer on the contact parts of the two materials, the tests were performed both in ambient for forming oxide layer on the contact parts and in nitride environment to avoid oxidation. And to study the effects of surface roughness of counter-body, TiN coating thickness and contact load of sliding test on the characteristics of oxide layer formation on counter-body, various tests were carried out. From the results, the friction characteristics between the two materials was predominated by iron oxide layer that formed on wear track on counter-body and this layer caused the high friction. And the formation rate of the oxide layer on wear track increased as the real contact area between the two materials increased as the contact load increased, the TiN coating thickness decreased and the surface of counter-body smoothened.

• 한국표면공학회지
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• 제30권3호
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• pp.191-201
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• 1997

Non-passivated electrolytic tinplates withour conventinal chemical treatment self-oxidize in ambient atmosphere to from yellow stain on the outermost surface during the long-term storage. The degree of yellowness of the stain increased linerly with the oxide thickness due to the interfeefence color of the $SnO_2$ Even though the thickness of the oxide layer was very thin, less than 100$\AA$ , it exerts an undesirable influence on the can-making processes, particularly the stripping behavior after ironing. Investigations were carried out on the morphologies of the coating layer, the changes in oxide thickness during successive can-making processes and the averge friction coefficients with the different oxide thinkness. These oxide layers were broken up and distributed within the bulk tin coating during the ironing process. This redistribution of the oxide layer prvented smooth pressing-aside of the tin coating layer, resulting in an increase in the ironing friction coefficient. As the friction was increased, the residual stress along the can wall thinkness(i.e., the hoop stress) was also increased. Due to both the oxibe layer accumulation, which increased the friction coefficient, and the hoop stress, can stripping efficiency without roll-back is reduced.

• E2M - 전기 전자와 첨단 소재
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• 제9권5호
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• pp.476-482
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• 1996

The multi-dielectric layer SiO$_{2}$/Si$_{3}$N$_{4}$/SiO$_{2}$(ONO) is used to improve electrical capacitance and to scale down the memory device. In this paper, improvement of the capacitance by reducing the bottom oxide thickness in the nitride deposition with load lock(L/L) vacuum system is studied. Bottom oxide thickness under the nitride layer is measured by ellipsometer both in L/L and non-L/L systems. Both results are in the range of 3-10.angs. and 10-15.angs., respectively, independent of the nitride and top oxide thickness. Effective thickness and cell capacitance for SONOS capacitor are in the range of 50-52.angs. and 35-37fF respectively in the case of nitride 70.angs. in L/L vacuum system. Compared with non-L/L system, the bottom oxide thickness in the case of L/L system decreases while cell capacitance increases about 4 fF. The results obtained in this study are also applicable to ONO scaling in the thin bottom oxide region of memory stacked capacitor.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2004년도 춘계종합학술대회
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• pp.658-660
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• 2004

본 논문에서는 DG MOSFET의 main gate와 side gate사이의 산화층 두께, 그리고 main gate와 Si 기판 사이의 산화층 두께를 변화시킴으로써 전기적 특성을 조사하였다. Main gate와 side gate사이의 간화층 두께가 4nm이고 main gate와 Si 기판사이의 산화층 두께가 3nm일 때 최적의 전기적 특성을 보였다. 이때, side gate 전압은 3V, 그리고 drain 전압은 1.5V를 인가하였다. 결과적으로 DG MOSFET의 전기적 특성은 main gate와 side gate 사이의 산화층 두께보다 main gate와 Si기판사이의 산화층 두께가 중요함을 알았다.

• 한국세라믹학회지
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• 제52권4호
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• pp.290-293
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• 2015

The properties of the IZTO thin films on the glass were studied with a variation of the $SiO_2$ buffer layer thickness. $SiO_2$ buffer layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the glass, and the In-Zn-Tin-Oxide (IZTO) thin films were deposited on the buffer layer by RF magnetron sputtering. All the IZTO thin films with the $SiO_2$ buffer layer are shown to be amorphous. Optimum $SiO_2$ buffer layer thickness was obtained through analyzing the structural, morphological, electrical, and optical properties of the IZTO thin films. As a result, the IZTO surface roughness is 0.273 nm with a sheet resistance of $25.32{\Omega}/sq$ and the average transmittance is 82.51% in the visible region, at a $SiO_2$ buffer layer thickness of 40 nm. The result indicates that the uniformity of surface and the properties of the IZTO thin film on the glass were improved by employing the $SiO_2$ buffer layer and the IZTO thin film can be applied well to the transparent conductive oxide for display devices.

• 한국전기전자재료학회논문지
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• 제28권3호
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• pp.185-190
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• 2015

In this study, we fabricated the indium gallium zinc oxide (IGZO), zinc oxide (ZnO), aluminum zinc oxide (AZO). oxide and silver are deposited by magnetron sputtering and thermal evaporator, respectively transparency and energy bandgap were changed by the thickness of silver layer. To fabricate metal oxide metal (OMO) structure, IGZO sputtered on a corning 1,737 glass substrate was used as bottom oxide material and then silver was evaporated on the IGZO layer, finally IGZO was sputtered on the silver layer we get the final OMO structure. The radio-frequency power of the target was fixed at 30 W. The chamber pressure was set to $6.0{\times}10^{-3}$ Torr, and the gas ratio of Ar was fixed at 25 sccm. The silver thickness are varied from 3 to 15 nm. The OMO thin films was analyzed using XRD. XRD shows broad peak which clearly indicates amorphous phase. ZnO, AZO, OMO show the peak [002] direction at $34^{\circ}$. This indicate that ZnO, AZO OMO structure show the crystalline peak. Average transmittance of visible region was over 75%, while that of infrared region was under 20%. Energy band gap of OMO layer was increased with increasing thickness of Ag layer. As a result total transmittance was decreased.