• Corrosion Science and Technology
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• v.3 no.2
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• pp.54-58
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• 2004

Effects of texture on the electrochemical behaviors of single grains in polycrystalline zinc were investigated using a capillary-based micro-droplet cell. Pontiodynamic sweeps and capacity measurements were carried out in pH 9 borate buffer solution. The cyclic voltammograms and the capacity measurements on single grains with different crystallographic orientations in polycrystalline Zn showed a strong dependence of oxide growth on crystallographic grain orientation. The total charge consumed for oxide formation and the inverse capacity increased with an increase of surface packing density of grain. suggesting the oxide formation was greater on grains with higher surface packing density.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.25-28
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• 2003

Ozone is a strong and useful oxidizing gas for the fabrication of oxide thin films. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper an ozone condensation system was evaluated from the viewpoint of an ozone supplier for oxide thin film growth. Ozone was condensed by an adsorption method and the ozone concentration reached 8.5 mol% in 2.5 h after the beginning of the ozone condensation process, indicating high effectiveness of the condensation process. Ozone was continuously desorbed from the silica gel by the negative pressure. We found the decomposition in the ozone concentration negligible if the condensed ozone is transferred from the ozone condensation system to the film growth chamber within a few minutes.

• 한국생물공학회:학술대회논문집
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• 2001.11a
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• pp.503-504
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• 2001

Characteristics of $CO_2$ fixation by Chlorella sp. HA -1 against NO and $SO_2$ were investigated. Culture pH in nitric oxide gas remained stable indicating that nitric oxide was not likely to be a problem for growth, while $SO_2$ could inhibit the cell growth because of pH drop. Chiarella sp. HA -1 containing 10% $CO_2$ from stack gas can be tolerant to 100 ppm nitric oxide and 100 ppm sulfuric oxide through pH control.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.134-138
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• 2012

Recently the preparation magnetic nanoparticles by a pulsed laser ablation in liquid has gained much attention because it is easy to control experimental parameters. Iron oxide magnetic nanoparticles have been prepared by a pulsed laser ablation of ${\alpha}-Fe_2O_3$ target in ethanol at different magnitude of laser energy of 1, 20, 40 and 80 mJ/pulse. It revealed that particle size increases with increasing laser energy. It could be concluded that 40 mJ/pulse is an optimum laser energy for the preparation of iron oxide nanoparticles with uniform size distribution. The nanoparticles are homogeneously dispersed in ethanol and their stability maintained for several months.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.99-99
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• 2014

Transparent oxide semiconductors (TOSs) are. currently attracting attention for application to transparent electrodes in optoelectronic devices and active channel layers in thin-film transistors. One of the key issues for the realization of next generation transparent electronic devices such as transparent complementary metal-oxide-semiconductor thin-film transistors (CMOS TFTs), transparent wall light, sensors, and transparent solar cell is to develop p-type TOSs. In this talks, I will introduce issues and status related to p-type TOSs such as LnCuOQ (Ln=lanthanide, Q=S, Se), $SrCu_2O_2$, $CuMO_2$ (M=Al, Ga, Cr, In), ZnO, $Cu_2O$ and SnO. The growth and properties of SnO and Cu-based oxides and their application to electronic devices will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.459-460
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• 2008

Zinc oxide micro rods were fabricated using as chemical bath deposition ok photolithography. Vertically aligned Zinc Oxide rod array as grown by chemical bath deposition method on Zinc Oxide template layer. The ZnO template layer was deposited on glass and the pattering was made by standard photolithography technique. The selective growth of ZnO micro rods were achieved with the masked ZnO template layer substrate. The fabricated ZnO micro rods were found to be single crystalline and have grown along hexagonal c-axis direction of (0002) which is same as the preferred growth orientation of ZnO template layer. The ZnO micro-rod array structure was implemented as a window layer in Cu(InGa)Se2 solar cell and its effect on photovoltaic efficiency was examined.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.369-373
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• 2020

A hydrogen sensor was fabricated by utilizing a bundle of metal oxide nanostructures whose growth positions were selectively controlled by utilizing graphene, which is a carbon of atomic-unit thickness. To verify the reducing ability of graphene, it was confirmed that the multi-composition metal oxide V₂O₅ was converted into VO₂ on the graphene surface. Because of the role of graphene as a reducing catalyst, it was confirmed that ZnO and MoO₃ nanostructures were grown at high density only on the graphene surface. The fabricated gas sensor showed excellent sensitivity.

• Transactions of Materials Processing
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• v.33 no.3
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• pp.200-207
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• 2024

In this study, we developed a semi-analytical approach for the numerical analysis of residual stress in oxide scales formed on hot-rolled steels. The oxide scale, formed during the hot rolling process, experiences complex interactions due to thermal and mechanical influences, significantly affecting the material's integrity and performance. Our research focuses on integrating various stress components such as thermal stress, growth stress, and creep behavior to predict the residual stress within the oxide layer. The semi-analytical method combines analytical expressions for each stress component with numerical integration to account for their cumulative effects. Validation through instrumented indentation tests confirms the reliability of our model, which considers thermal expansion coefficient (CTE) differences, scale growth, and creep-induced stress relaxation. Our findings indicate that thermal stress resulting from CTE differences significantly impacts the overall residual stress, with growth stress contributing a compressive component during cooling, and creep behavior playing a minor role in stress relaxation. This comprehensive approach enhances the accuracy of residual stress prediction, facilitating the optimization of material design and processing conditions for hot-rolled steel products.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.412-417
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• 2000

High electric field stressed trap distributions were investigated in the thin silicon oxide of polycrystalline silicon gate metal oxide semiconductor capacitors. The transient currents associated with the off time of stressed voltage were used to measure the density and distribution of high voltage stress induced traps. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface in polycrystalline silicon gate metal oxide semiconductor devices. The stress generated trap distributions were relatively uniform the order of $10^{11}$~$10^{12}$ [states/eV/$\textrm{cm}^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}$~$10^{13}$ [states/eV/$\textrm{cm}^2$]. It was appeared that the transient current that flowed when the stress voltages were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.