• Title/Summary/Keyword: oxidation rate

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A Study on the Characteristics of Fenton Oxidation of Bisphenol A and Nitrobenzene (비스페놀A와 니트로벤젠의 펜톤 산화분해 특성)

  • Bae, Su-Jin;Kwon, Hee-won;Kim, Ji-young;Hwang, In-Seong;Kim, Young-Hun
    • Journal of Environmental Science International
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    • v.30 no.12
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    • pp.1005-1014
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    • 2021
  • Organic contaminants can be released into water environments due to chemical accidents and exist as dissolved and non-aqueous phase liquids (NAPL). Fenton oxidation was tested for bisphenol A and nitrobenzene as model organic contaminants in dissolved and NAPL states. Fenton oxidation was successfully applied for both of the dissolved and NAPL states of the two pollutants and the results indicated that a quick treatment was needed to reduce the risk from a chemical accidents instead of carrying out oxidation after the contaminants dissolve in water. A set of Fenton reactions were tested under seawater conditions because chemical accidents often occurs in the ocean. Chloride ions act as radical scavengers and inhibit Fenton oxidation. The reaction rate is inversely proportional to salt contents and the reduced reaction rate can be compensated by increasing the quantity of the oxidizing agents. The current study showes that Fenton oxidation could be applied as a quick treatments for organic contaminant in dissolved and NAPL state organic contaminants released as a result of leaks or chemical accidents.

Oxidation Behavior of Unirradiated and Irradiated $UO_2$ in hir at $150-375^\circ{C}$

  • Kim, Keon-Sik;You, Gil-Sung;Min, Duck-Kee;Ro, Seung-Gy;Kim, Eun-Ka
    • Nuclear Engineering and Technology
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    • v.29 no.2
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    • pp.93-98
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    • 1997
  • Air-oxidation experiments on unirradiated and irradiated UO$_2$ were performed at temperature from 150 to 375$^{\circ}C$ for investigating the long-term storage behavior of spent PWR fuel. The rate of oxidation was monitored by a thermogravimetric analyzer(TGA) and an X-ray diffraction(XRD). The correlation between the onset-time for U$_3$O$_{8}$ formation and temperature was given as follows, logt(hr) = -12.89+7650/T(K), 423$_2$ pellet, the oxidation rate of irradiated UO$_2$ increase more rapidly at the initial stage and shows a lower saturation point at the later Stage. The Oxidation rate of high bumup UO$_2$ and gadolinia-doped UO$_2$(Gd$_2$O$_3$-UO$_2$) were observed to be much slower than that of unirradiated UO$_2$ pellets.s.

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Growth Characteristics of Acidithiobacillus thiooxidans in Different Sulfur Concentrations (황 농도에 따른 Acidithiobacillus thiooxidans의 생장 특성)

  • Lee, Eun-Young;Cho, Kyung-Suk;Ryu, Hee-Wook
    • Microbiology and Biotechnology Letters
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    • v.34 no.4
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    • pp.338-341
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    • 2006
  • The growth characteristics of sulfur-oxidizing bacteria, Acidithiobacillus thiooxidans AZ11, MET, and TAS were investigated in mineral salt media supplemented with elemental sulfur of 1$\sim$50 g $L^{-1}$. The sulfur oxidation rates of A. thiooxidans. MET and TAS increased highly with increasing sulfur concentration up to 10 g L$^{-1}$, but the rates increased slowly in sulfur concentration over 10 g L$^{-1}$. A. thiooxidans AZ11 showed the parallel increase of sulfur oxidation rate until sulfur concentration increased up to 40 g L$^{-1}$. The maximum sulfur oxidation rates (V$_{max}$) of AZl1, MET and TAS were 1.88, 1.38 and 0.43 g S L$^{-1}$ d$^{-1}$, respectively. The maximum specific growth rates (${\mu}_{max}$) of AZ11, MET, and TAS were 0.33 d$^{-1}$, 0.30 d$^{-1}$ and 0.45 d$^{-1}$, respectively. Although MET and TAS couldn't grow at sulfate concentration of 40 g L$^{-1}$, AZ11 could grow in the presence of 58 g L$^{-1}$ sulfate, the final oxidation product of elemental sulfur.

Weathering of coal and kerogen : implications on the geochmical carbon and oxygen cycle and the environmental geochemical reactions (탄질 유기물과 케로젠의 풍화 : 탄소와 산소의 지화학적 순환 및 환경화학적 반응에 미치는 영향)

  • 장수범
    • Economic and Environmental Geology
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    • v.32 no.1
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    • pp.101-111
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    • 1999
  • Sedimentary organic matter, exposed to continental surficial environment, reacts with oxygen supplied from the atmosphee and forms carbon-containing oxidation products. Knowledge of the rate and mechanisms of sedimentary organic matter weathering is important because it is one of the major controls on atmospheric oxygen level through geologic time. Under the abiological conditions, the oxidation rate of coal organic matter by molecular oxygen is enhanced by the increase of oxygen concentration and temperature. At ambient temperature and pressure, aqueous coal oxidation results in the formation of dissolved $CO_2$ dissolved organic carbon and solid oxidation products which are all quantitatively significant reaction products. The effects of pH, ultraviolet light, and microbial activity on the weathering of sedimentary organic matter are poorly contrained. Based on the results of geochmical and environmental studies, it is believed that the photochemical reaction should play an important role in the decomposition and oxidation of sedimentary organic matter removed from the weathering profile. At higher pH conditions, the production rate of DOC can be accelerated due to base catalysis. These high molecular weight oranic matter can react with man-made pollutants such as heavy metal ions via adsorption/desorption or ion exchange reactions. The effect of microbial activity on the oxidative weathering of sedimentary organic matter is poorly understood and remains to be studied.

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Kinetic and Mechanistic Studies of Oxidation of an Antiallergic Drug with Bromamine-T in Acid and Alkaline Media

  • Puttaswamy, Puttaswamy;Sukhdev, Anu
    • Bulletin of the Korean Chemical Society
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    • v.33 no.11
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    • pp.3544-3550
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    • 2012
  • Cetrizine dihydrochloride (CTZH) is widely used as an anti-allergic drug. Sodium N-bromo-p-toluenesulfonamide or bromamine-T (BAT) is the bromine analogue of chloramine-T (CAT) and is found to be a better oxidizing agent than CAT. In the present research, the kinetics of oxidation of CTZH with BAT in acid and alkaline media was studied at 313 K. The experimental rate laws obtained are: -d[BAT]/dt=$k[BAT][CTZH]^{0.80}[H^+]^{-0.48}$ in acid medium and -d[BAT]/dt=$k[BAT][CTZH]^{0.48}[OH^-]^{0.52}[PTS]^{-0.40}$ in alkaline medium where PTS is p-toluenesulfonamide. Activation parameters and reaction constants were evaluated. The solvent isotope effect was studied using $D_2O$. The dielectric effect is positive. The stoichiometry of the reaction was found to be 1:1 and the oxidation products were identified as 4-chlorobenzophenone and (2-piperazin-1-yl-ethoxy)-acetic acid in both media. The rate of oxidation of CTZH is faster in acid medium. Suitable mechanisms and related rate laws have been worked out.

Oxide Layer Growth in High-Pressure Steam Oxidation (고압 수증기 내에서 산화막 형성에 관한 연구)

  • 박경희;안순의;구경완;왕진석
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.735-738
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    • 2000
  • This paper shows experimentally that oxide layer on the p-type Si-substrate can grow at low temperature(500$^{\circ}C$∼600$^{\circ}C$) using high pressure water vapor system. As the result of experiment, oxide layer growth rate is about 0.19${\AA}$/min at 500$^{\circ}C$, 0.43${\AA}$/min at 550$^{\circ}C$, 1.2${\AA}$/min at 600$^{\circ}C$ respectively. So, we know oxide layer growth follows reaction-controlled mechanism in given temperature range. Consequently, granting that oxide layer growth rate increases linearly to temperature over 600$^{\circ}C$, we can expect oxide growth rate is 5.2${\AA}$/min at 1000$^{\circ}C$. High pressure oxidation of silicon is particularly attractive for the thick oxidation of power MOSFET, because thermal oxide layers can grow at relatively low temperature in run times comparable to typical high-temperature, 1 atm conditions. For higher-temperature, high-pressure oxidation, the oxidation time is reduced significantly

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The Chemically Induced Hot Electron Flows on Metal-Semiconductor Schottky nanodiodes During Hydrogen Oxidation

  • Lee, Hyosun;Lee, Youngkeun;Lee, Changhwan;Kim, Sunmi;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.152-152
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    • 2013
  • Mechanism of energy conversion from chemical to electrical during exothermic catalytic reactions at the metal surfaces has been a fascinating and crucial subject in heterogeneous catalysis. A metal-semiconductor Schottky nanodiode is novel device for direct detection of chemically induced hot electrons which have sufficient energy to surmount the Schottky barrier. We measured a continuous chemicurrent during the hydrogen oxidation under of 760 Torr of O2 and 6 Torr of H2 by using Pt/Si and Pt/TiO2 nanodiodes at reaction temperatures and compared the chemicurrent with the reaction turnover rate. The thermoelectric current was measured by carrying out an experiment under O2 condition for elimination of the background current. Gas chromatograph and source meter were used for measurement of the chemical turnover rate and the chemicurrent, respectively. The correlation between the chemicurrent and the chemical turnover rate under hydrogen oxidation implies how hot electrons generated on the metal surface affect hydrogen oxidation.

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Oxidation Behavior of WC-Co Hardmetal (WC-Co 초경합금의 산화거동)

  • 이길근;권한상;하국현
    • Journal of Powder Materials
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    • v.11 no.2
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    • pp.111-117
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    • 2004
  • The oxidation behavior of 91 WC-9Co hardmetal in weight percentage has been studied in the present work as a part of the development of recycling process. The morphological and compositional changes of the WC-Co hardmetal with oxidation time at 90$0^{\circ}C$ were analyzed by using surface observation and X-ray diffraction. respective]y. As the oxidation time increased, the WC-Co hardmetal was continuously expanded to form porous oxide mixtures of $CoWO_4$ and $WO_3$. The morphology of porous oxide mixture was basically dependent on initial shape of the WC-Co hardmetal. From thermo-gravimetric (TG) analysis, it was found that the oxidation rate was increased with increasing oxidation temperature and oxygen content in the flowing atmospheric gas. The fraction of oxidation versus time curves showed S-curve relationship at a given of oxidation temperature. These oxidation behaviors of the WC-Co hardmetal were discussed in terms of previously proposed kinetic models.

Effect of Cooling Rate on the Behavior of the Embrittlement in Zircaloy-4 Cladding (냉각속도가 지르칼로이-4 피복관의 취성에 미치는 영향)

  • Kim, Jun Hwan;Lee, Myoung Ho;Choi, Byoung Kwon;Jeong, Yong Hwan
    • Journal of the Korean Society for Heat Treatment
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    • v.18 no.2
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    • pp.112-118
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    • 2005
  • Study was focused on the effect of the cooling rate on the embrittlement behavior of Zircaloy-4 cladding simulated Loss Of Coolant Accident (LOCA) environment. Claddings were oxidized at given temperature and given time followed by various water quenching in the range of $0.6^{\circ}C$ and $100^{\circ}C$ per second. Cladding failed after water quenching above the threshold oxidation. Threshold oxidation was decreased as the cooling rate increased, which is due to the matensite structure formed during fast cooling rate.

Catalytic Oxidation of Carbon Monoxide on Pt and $SnO_2$ (Pt 및 $SnO_2$ 촉매하에서의 일산화탄소의 산화반응)

  • Kwang Yul Choo;Hasuck Kim;Bonghyun Boo
    • Journal of the Korean Chemical Society
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    • v.24 no.3
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    • pp.183-192
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    • 1980
  • Oxidation reactions of carbon monoxide on $SnO_2$, Sb-doped $SnO_2$, and Pt catalyst were studied. The oxidation reaction was found to be first order with respect to both CO and O$_2$ on $SnO_2$ and Sb-doped $SnO_2$ catalysts, and to be of half order on Pt catalyst. A small addition of Sb to $SnO_2$ (depant composition: 0.05∼0.1 mol %) increased the rate of oxidation. On the contrary, a large addition decreased the rate. From the rate expression of oxidation on Pt catalyst, the inhibition effect of carbon monoxide on the rate of oxidation was deduced. The experimentally obtained activatio energies were 5.7 kcal for the Sb doped $SnO_2$ catalyst (dopant composion: 0.05 mole%), and 6.4 kcal for the Pt catalyst. A possible reaction mechanism was proposed from the experimentally obtained kinetic data.

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