• Journal of Power Electronics
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• 제3권2호
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• pp.139-144
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• 2003

In this paper, 11 and 13 layered step-down piezoelectric transformers were fabricated and their electrical characteristics have been analyzed for AC-adapter. When the voltage is applied to the driving piezoelectric vibrator polarized in the longitudinal direction, the output voltage is generated at the generating piezoelectric vibrator polarized in the thickness direction due to the piezoelectric effects. From the piezoelectric direct and converse effects, symbolic expressions between the electric inputs and outputs of the step-down piezoelectric transformer are derived with an equivalent circuit model. With those expressions, load and frequency characteristics are discussed through the simulations. Output voltage and current from a 11-layered and a 13-layered piezoelectric transformers were measured under the different load and frequency conditions. First we measured resonant frequency from impedance curve and got equivalent impedance value of the piezoelectric transformer from admittance plot. It was shown from experiments that output voltage increase s and resonant frequency changes according to the various resistor loads. Output current decreases inversely proportional to the change of loads. Moreover, the measured output voltage and current are well matched with the simulated results obtained from the proposed equivalent circuit model. Furthermore, a new step-down piezoelectric transformer has been suggested to Increase the output power based on a simulation result having a driving piezoelectric vibrator polarized thickness direction.

• 한국재료학회지
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• 제22권9호
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• pp.450-453
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• 2012

In crystalline solar cells, the substrate itself constitutes a large portion of the fabrication cost as it is derived from semiconductor ingots grown in costly high temperature processes. Thinner wafer substrates allow some cost saving as more wafers can be sliced from a given ingot, although technological limitations in slicing or sawing of wafers off an ingot, as well as the physical strength of the sliced wafers, put a lower limit on the substrate thickness. Complementary to these economical and techno-physical points of view, a device operation point of view of the substrate thickness would be useful. With this in mind, BC-BJ Si and GaAs solar cells are compared one to one by means of the Medici device simulation, with a particular emphasis on the substrate thickness. Under ideal conditions of 0.6 ${\mu}m$ photons entering the 10 ${\mu}m$-wide BC-BJ solar cells at the normal incident angle (${\theta}=90^{\circ}$), GaAs is about 2.3 times more efficient than Si in terms of peak cell power output: 42.3 $mW{\cdot}cm^{-2}$ vs. 18.2 $mW{\cdot}cm^{-2}$. This strong performance of GaAs, though only under ideal conditions, gives a strong indication that this material could stand competitively against Si, despite its known high material and process costs. Within the limitation of the minority carrier recombination lifetime value of $5{\times}10^{-5}$ sec used in the device simulation, the solar cell power is known to be only weakly dependent on the substrate thickness, particularly under about 100 ${\mu}m$, for both Si and GaAs. Though the optimum substrate thickness is about 100 ${\mu}m$ or less, the reduction in the power output is less than 10% from the peak values even when the substrate thickness is increased to 190 ${\mu}m$. Thus, for crystalline Si and GaAs with a relatively long recombination lifetime, extra efforts to be spent on thinning the substrate should be weighed against the expected actual gain in the solar cell output power.

• 한국재료학회지
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• 제27권2호
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• pp.107-112
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• 2017

The BCBJ (Back Contact and Back Junction) or back-lit solar cell design eliminates shading loss by placing the pn junction and metal electrode contacts all on one side that faces away from the sun. However, as the electron-hole generation sites now are located very far from the pn junction, loss by minority-carrier recombination can be a significant issue. Utilizing Medici, a 2-dimensional semiconductor device simulation tool, the interdependency between the substrate thickness and the minority-carrier recombination lifetime was studied in terms of how these factors affect the solar cell power output. Qualitatively speaking, the results indicate that a very high quality substrate with a long recombination lifetime is needed to maintain the maximum power generation. The quantitative value of the recombination lifetime of minority-carriers, i.e., electrons in p-type substrates, required in the BCBJ cell is about one order of magnitude longer than that in the front-lit cell, i.e., $5{\times}10^{-4}sec$ vs. $5{\times}10^{-5}sec$. Regardless of substrate thickness up to $150{\mu}m$, the power output in the BCBJ cell stays at nearly the maximum value of about $1.8{\times}10^{-2}W{\cdot}cm^{-2}$, or $18mW{\cdot}cm^{-2}$, as long as the recombination lifetime is $5{\times}10^{-4}s$ or longer. The output power, however, declines steeply to as low as $10mW{\cdot}cm^{-2}$ when the recombination lifetime becomes significantly shorter than $5{\times}10^{-4}sec$. Substrate thinning is found to be not as effective as in the front-lit case in stemming the decline in the output power. In view of these results, for BCBJ applications, the substrate needs to be only mono-crystalline Si of very high quality. This bars the use of poly-crystalline Si, which is gaining wider acceptance in standard front-lit solar cells.

• Journal of Radiation Protection and Research
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• 제43권4호
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• pp.131-136
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• 2018

Background: We investigated the current characteristics of a thin-film Ag electrode on a chemical vapor deposition (CVD) diamond. The CVD diamond is widely recognized as a radiation detection material because of its high tolerance against high radiation, stable response to various dose rates, and good sensitivity. Additionally, thin-film Ag has been widely used as an electrode with high electrical conductivity. Materials and Methods: Considering these properties, the thin-film Ag electrode was deposited onto CVD diamonds with varied deposition thicknesses (${\fallingdotseq}50/98/152/257nm$); subsequently, the surface thickness, surface roughness, leakage current, and photo-current were characterized. Results and Discussion: The leakage current was found to be very low, and the photo-current output signal was observed as stable for a deposited film thickness of 98 nm; at this thickness, a uniform and constant surface roughness of the deposited thin-film Ag electrode were obtained. Conclusion: We found that a CVD diamond radiation detector with a thin-film Ag electrode deposition thickness close to 100 nm exhibited minimal leakage current and yielded a highly stable output signal.

• Current Optics and Photonics
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• 제2권5호
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• pp.474-481
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• 2018

We propose a polarization phase-shifting technique to investigate the thickness of $Ta_2O_5$ thin films deposited on BK7 substrates, using a modified Sagnac interferometer. Incident light is split by a polarizing beam splitter into two orthogonal linearly polarized beams traveling in opposite directions, and a quarter-wave plate is inserted into the common path to create an unbalanced phase condition. The linearly polarized light beams are transformed into two circularly polarized beams by transmission through a quarter-wave plate placed at the output of the interferometer. The proposed setup, therefore, yields rotating polarized light that can be used to extract a relative phase via the self-reference system. A thin-film sample inserted into the cyclic path modifies the output signal, in terms of the phase retardation. This technique utilizes three phase-shifted intensities to evaluate the phase retardation via simple signal processing, without manual adjustment of the output polarizer, which subsequently allows the thin film's thickness to be determined. Experimental results show that the thicknesses obtained from the proposed setup are in good agreement with those acquired by a field-emission scanning electron microscope and a spectroscopic ellipsometer. Thus, the proposed interferometric arrangement can be utilized reliably for non-contact thickness measurements of transparent thin films and characterization of optical devices.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1998년도 제28회 추계학술대회
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• pp.166-174
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• 1998

The distribution of oil film thickness in piston were measured by induced fluorescence method. A Xe lamp was used as light source. Coumarine-6 was mixed with oil as the fluorescent dye. Fluorescent signal which is proportional to the oil film thickness was acquired by CCD camera and transmitted to the personal computer as video signal. In order to solve the problem of measurement system, irregular distribution and unstability of light intensity, as well as to know the relationship between the oil film thickness and output signal, three different calibration techniques were used. Motoring and firing tests were performed in a single cylinder research engine with transparent liner. By analyzing the oil film thickness converted from the photographed image, it was observed that each of three piston rings scrapes the oil both upward and downward and oil film thickness is not uniform horizontally at a given piston land. The amount of oil in each land was considerably affected by the engine load. It is thought that the blow-by gas blows the oil down to the crankcase.

• 한국멀티미디어학회논문지
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• 제25권8호
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• pp.1022-1037
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• 2022

It is important to develop a transducer that generates uniform output power through frequency control of the HIFU at 4 MHz frequency for the high intensity focused ultrasound (HIFU) skin diseases treatment. In this paper, a 4 MHz frequency band HIFU system for skin disease treatment was designed, manufactured and developed. In HIFU, even for the ultrasonic vibrator in the 4 MHz frequency band, the characteristics of the output power of the HIFU are different depending on the difference in the thickness of the PZT material. Through the development of a system amplifier, the sound output of the HIFU transducer was improved to more than 48 W and uniform output power control was possible. And, it is possible to control the output power even in a frequency band of 4.0 to 4.7 MHz, which is wider than 4.0 MHz, and shows the resonance frequency of the transducer. The maximum output power for each frequency was 49.969 W and the minimum value was 48.018 W. The maximum output power compared to the minimum output power is 49.969 W, which is uniform within 4.1%. It was confirmed that the output power of the HIFU through the amplifier can be uniformly controlled in the 4 MHz frequency band.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.39-39
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• 2009

We fabricated p-channel TFTs based on poly Silicon. The 35nm thickness silicon dioxide layer structure got higher $I_{on}/I_{off}$ ratio, field-effect Mobility and output current than 10nm thickness. And 35nm layer showed low leakage current and threshold voltage. So, 35nm thickness silicon dioxide layer TFTs are faster reaction speed and lower power consumption than 10nm thickness.

• Geomechanics and Engineering
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• 제5권1호
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• pp.1-15
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• 2013

Pressure transducers are increasingly used within soil mass or at soil-structure interface for appraisal of stresses acting at point of installation. Calibration of pressure transducers provides a unique relationship between applied pressure and voltage or strain sensed by transducer during various loading conditions and is crucial for proper interpretation of results obtained from pressure transducers. In the present study an in-house calibration device is used to calibrate pressure transducers and the study is divided into two parts: 1) demonstration of developed calibration device for fluid and in-soil calibration of pressure transducers; 2) effect of soil layer thickness on the earth pressure cell (EPC) output. Results obtained from the present study revealed successful performance of the developed calibration device, and significant effect of sand layer thickness on the calibration results. The optimum sand layer thickness is obtained as 1.5 times the diameter of EPC.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1051-1057
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• 2000

A traveling-wave CPW(coplanar waveguide) electrode with abruptly broken input/output-taper for LiNbO$_3$optical modulator was designed and fabricated. The electrical characteristics of traveling-wave electrode on z-cut LiNbO$_3$crystal with SiO$_2$buffer layers were measured by network analyzer. To confirm the possibility of the electro-optic modulator electrode, detailed calculations of the impedance, microwave effective index and attenuation constants are presented as a function of the microwave electrode thickness, but the buffer layer thickness is fixed as 1${\mu}{\textrm}{m}$. These characteristics are discussed from the viewpoint of the device optimization and are expected to be design guides for the LiNbO$_3$modulator’s electrodes.