• Polymer Science and Technology
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• v.20 no.5
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• pp.472-480
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• 2009

반도체 미세화가 진행되면서, 이를 성공하기 위해 많은 재료물질이 요구되어진다. 이 중 미세 패턴의 붕괴를 막고 깊은 패턴을 새기기 위해서 필요한 hardmask 재료가 있다. Hardmask는 유기실리콘 재료와 탄소 함량이 높은 재료로 주로 구성되고, 이들은 193 nm 빛과 관련된 광학적 특성을 가지면서 특정 플라즈마에 대한 에치 저항성을 가지는 물성을 가지도록 디자인/합성/배합되어져 있다. 또한, 접합되는 다른 박막과의 compatibility및 용매에 대한 solubility 등이 적절해야만 나노미터 수준의 defect 없는 패턴을 구현할 수 있다.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.297-302
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• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• Bulletin of the Korean Chemical Society
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• v.19 no.3
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• pp.328-332
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• 1998

Anionic ring-opening polymerization of 3,4-[(dimethylsilyl)isopropyl]benzo-1,1-dimethyl-1-silacyclopentene in the presence of n-butyllithium and HMPA in THF at - 78 ℃ afforded poly[3,4-(dimethylsilylisopropyl)benzo-1,1-dimethyl-1-silapentene]. The characteristic Si-H stretching frequency in the IR is observed at 2100 cm-1. The polycarbosilane has been modified by chloroplatinic acid catalyzed addition of styrene to the polycarbosilane SiH units. Molecular weights and thermal properties of the polymers were compared. The sol-gel polymerization of 3,4-[(dimethoxysilyl)isopropyl]benzo-1,1-dimethoxy-1-silacyclopentene in the presence of aqueous HCl or NaOH in THF resulted in a cross-linked polysiloxane. The xerogel has a low surface area of 13-14 m2/g and is stable up to about 400 ℃ with only 5% weight loss under a nitrogen atmosphere.

• Bulletin of the Korean Chemical Society
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• v.19 no.3
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• pp.358-362
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• 1998

A series of six-membered ring organosilicon compounds, 1-aryl-1-(1H-1,2,4-triazol-1-yl)alkyl-1-silacyclohexanes 3a-c, have been synthesized by four-step reactions starting from 1-(chloroalkyl)trichlorosilanes. Their fungicidal activities were tested in in vitro for ten fungi and in vivo assay for four fungi occurring in rice, barley, tomato, and etc. and compared with the flusilazole. Especially, 1-p-fluorophenyl-1-[1-(1H-1,2,4-triazol-1-yl)alkyl]-1-silacyclohexanes (3a, alkyl=methyl; 3b, alkyl=ethyl) showed good fungicidal activity with broad spectrum close to the flusilazole in in vivo assay.

• Bulletin of the Korean Chemical Society
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• v.23 no.9
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• pp.1213-1221
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• 2002

Friedel-Crafts alkylation reaction of an isomeric mixture of 1,2,3,4,5,6,7,8- (2) and 1,2,3,4,5,6,7,8-octahydrophenanthrene (2') with excess vinylchlorosilanes such as vinyl(methyl)dichlorosilane (1a) and vinyltrichlorosilane (1b) in the presence of aluminum chloride catalyst at 80 $^{\circ}C$ gives only one dialkylated products, 9,10-bis[2-(chlorosilyl)ethyl]-1,2,3,4,5,6,7,8-octahydroanthrenes [(Cl2XSiCH2CH2)2C14H16: X = Me (4a), Cl (4b)] in good yields, but 9,10-bis[2-(chlorosilyl)ethyl]-1,2,3,4,5,6,7,8-octahydrophenanthrenes are not obtained. However, monoalkylation of 2 with 1 affords a mixture of both isomeric compounds, 9-[2-(chlorosilyl)ethyl]-1,2,3,4,5,6,7,8-octahydroanthracenes 3 and -phenanthrenes 3'. The yield of product 3' is always higher than that of 3. When a mixture of 3 and 3' is alkylated again with 1, only product 4 without phenanthrene type compounds is obtained, indicating that the isomerizations between 2 and 2', or 3 and 3'occur under the alkylation condition. The alkylation with dimethylvinylchlorosilane or trimethylvinylsilane did not proceed. The structure of 4a is determined by X-ray single crystal diffraction analysis.

• Bulletin of the Korean Chemical Society
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• v.35 no.6
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• pp.1825-1831
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• 2014

Grignard metathesis polymerizations of 1,1-disubstituted-2,5-dibromo-3,4-diphenylsiloles such as 1,1-dimethyl-2,5-dibromo-3,4-diphenylsilole, 1,1-diethyl-2,5-dibromo-3,4-diphenylsilole, 1,1-diisopropyl-2,5-dibromo-3,4-diphenylsilole, and 1,1-dihexyl-2,5-dibromo-3,4-diphenylsilole were performed to yield poly(1,1-disubstituted-3,4-diphenyl-2,5-silole)s containing fluorescent aromatic chromophore groups such as phenyl and silole in the polymer main chain: poly(1,1-dimethyl-3,4-diphenyl-2,5-silole), poly(1,1-diethyl-3,4-diphenyl-2,5-silole), poly(1,1-diisopropyl-3,4-diphenyl-2,5-silole), and poly(1,1-dihexyl-3,4-diphenyl-2,5-silole), respectively. The obtained materials are highly soluble in common organic solvents such as chloroform and tetrahydrofuran. Fourier-transform infrared spectra of all the polymers have characteristic C=C stretching frequencies at $1620-1628cm^{-1}$. The prepared organosilicon polymers exhibit strong absorption maximum peaks at 273-293 nm in the tetrahydrofuran solution, showing a red-shift of 18-34 nm relative to those of the monomer, strong excitation maximum peaks at 276-303 nm, and strong fluorescence emission maximum bands at 350-440 nm. Thermogravimetric analysis shows that most of the polymers are stable up to $200^{\circ}C$ with a weight loss of 6-16% in nitrogen.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.515-518
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• 2013

We present synthesis of a new kind of organic-inorganic hybrid polymer, poly xylene-hexamethyltrisiloxane hybrid (PXS) by a new synthetic way from o-xylene and 1,1,3,3,5,5-hexamethyltrisiloxane. The merged molecular structure of the two monomeric components for the PXS polymer was confirmed by $^{13}C$- and $^1H$-NMR, and FT-IR. Its optical absorption and emission properties were investigated by UV-vis absorption and photoluminescence (PL) spectroscopy. The PXS exhibits absorption at 265 nm which is the same with the o-xylene but tailing up to nearly 400 nm, which is maybe related the polymeric structure of the PXS. For the PL investigation, the PXS shows red-shift of the peak from 288 nm (o-xylene) to 372 nm in the case of excitation at 265 nm, at which both PXS and o-xylene have sufficiently high absorption for excitation. When 325-nm laser is used for excitation, the PXS shows a broader peak at 395 nm compared to the excitation at 265 nm and the o-xylene shows no luminescence probably due to the lack of absorption at 325 nm.

• Applied Chemistry for Engineering
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• v.9 no.6
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• pp.791-797
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• 1998

As organosilicon based preceramic polymer, new zirconium hybridized polycarbosilane having a good thermal stability and forming stage was synthesized. Oxidative stability(infusibility) and mechanical property of this polymer during the thermal curing process and heat treatment were examined. Prepared zirconium hybridized polycarbisilane (PZC) was spun into fiber at $250{\sim}270^{\circ}C$. Spinnability of PZC polymer having a molecular weight of 1000 to 1400 and having a dispersity<2 was good. The thermal curing process of the PZC fiber was done at 140 to $200^{\circ}C$. The mechanical properties of PZC ceramic fiber depend on curing temperature of PZC as precursor of PZC ceramic fiber. It was found that the optimum curing temperature was variable with the molecular weight of PZC. The cured PZC fiber need constant gel fraction to have good tensile strength.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.21-28
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• 2000

Refractory metals, W and Ti, and their nitrides, $W_2N$ and TiN, were investigated for using as an ohmic contact material with SiC single crystalline thin films. The possibility of nitride materials for using as a stable ohmic contact material of SiC at high temperatures was examined by considering the thermal stability depending on the heat treatment temperature, their electrical properties and protective behavior from the interdiffusion. W contact with SiC thin films, deposited by using new organosilicon precursor, bis-trimethylsilylmethane, showed the lowest resistivity, $2.17{\times}10^{-5}$Ω$\textrm{cm}^2$. On the other hand, Ti-based contact materials showed higher contact resistivity than W-based ones. The oxidation of contact materials was restricted by applying Pt thin films on those electrodes. Nitride electrodes had rather stable electrical properties and better protective behavior from interdiffusion than metal electrodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.