• 한국고분자학회지:고분자과학과기술
• /
• 제20권5호
• /
• pp.472-480
• /
• 2009

반도체 미세화가 진행되면서, 이를 성공하기 위해 많은 재료물질이 요구되어진다. 이 중 미세 패턴의 붕괴를 막고 깊은 패턴을 새기기 위해서 필요한 hardmask 재료가 있다. Hardmask는 유기실리콘 재료와 탄소 함량이 높은 재료로 주로 구성되고, 이들은 193 nm 빛과 관련된 광학적 특성을 가지면서 특정 플라즈마에 대한 에치 저항성을 가지는 물성을 가지도록 디자인/합성/배합되어져 있다. 또한, 접합되는 다른 박막과의 compatibility및 용매에 대한 solubility 등이 적절해야만 나노미터 수준의 defect 없는 패턴을 구현할 수 있다.

• 한국표면공학회지
• /
• 제32권3호
• /
• pp.297-302
• /
• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• Bulletin of the Korean Chemical Society
• /
• 제19권3호
• /
• pp.328-332
• /
• 1998

Anionic ring-opening polymerization of 3,4-[(dimethylsilyl)isopropyl]benzo-1,1-dimethyl-1-silacyclopentene in the presence of n-butyllithium and HMPA in THF at - 78 ℃ afforded poly[3,4-(dimethylsilylisopropyl)benzo-1,1-dimethyl-1-silapentene]. The characteristic Si-H stretching frequency in the IR is observed at 2100 cm-1. The polycarbosilane has been modified by chloroplatinic acid catalyzed addition of styrene to the polycarbosilane SiH units. Molecular weights and thermal properties of the polymers were compared. The sol-gel polymerization of 3,4-[(dimethoxysilyl)isopropyl]benzo-1,1-dimethoxy-1-silacyclopentene in the presence of aqueous HCl or NaOH in THF resulted in a cross-linked polysiloxane. The xerogel has a low surface area of 13-14 m2/g and is stable up to about 400 ℃ with only 5% weight loss under a nitrogen atmosphere.

• Bulletin of the Korean Chemical Society
• /
• 제19권3호
• /
• pp.358-362
• /
• 1998

A series of six-membered ring organosilicon compounds, 1-aryl-1-(1H-1,2,4-triazol-1-yl)alkyl-1-silacyclohexanes 3a-c, have been synthesized by four-step reactions starting from 1-(chloroalkyl)trichlorosilanes. Their fungicidal activities were tested in in vitro for ten fungi and in vivo assay for four fungi occurring in rice, barley, tomato, and etc. and compared with the flusilazole. Especially, 1-p-fluorophenyl-1-[1-(1H-1,2,4-triazol-1-yl)alkyl]-1-silacyclohexanes (3a, alkyl=methyl; 3b, alkyl=ethyl) showed good fungicidal activity with broad spectrum close to the flusilazole in in vivo assay.

• Bulletin of the Korean Chemical Society
• /
• 제23권9호
• /
• pp.1213-1221
• /
• 2002

Friedel-Crafts alkylation reaction of an isomeric mixture of 1,2,3,4,5,6,7,8- (2) and 1,2,3,4,5,6,7,8-octahydrophenanthrene (2') with excess vinylchlorosilanes such as vinyl(methyl)dichlorosilane (1a) and vinyltrichlorosilane (1b) in the presence of aluminum chloride catalyst at 80 $^{\circ}C$ gives only one dialkylated products, 9,10-bis[2-(chlorosilyl)ethyl]-1,2,3,4,5,6,7,8-octahydroanthrenes [(Cl2XSiCH2CH2)2C14H16: X = Me (4a), Cl (4b)] in good yields, but 9,10-bis[2-(chlorosilyl)ethyl]-1,2,3,4,5,6,7,8-octahydrophenanthrenes are not obtained. However, monoalkylation of 2 with 1 affords a mixture of both isomeric compounds, 9-[2-(chlorosilyl)ethyl]-1,2,3,4,5,6,7,8-octahydroanthracenes 3 and -phenanthrenes 3'. The yield of product 3' is always higher than that of 3. When a mixture of 3 and 3' is alkylated again with 1, only product 4 without phenanthrene type compounds is obtained, indicating that the isomerizations between 2 and 2', or 3 and 3'occur under the alkylation condition. The alkylation with dimethylvinylchlorosilane or trimethylvinylsilane did not proceed. The structure of 4a is determined by X-ray single crystal diffraction analysis.

• Bulletin of the Korean Chemical Society
• /
• 제35권6호
• /
• pp.1825-1831
• /
• 2014

Grignard metathesis polymerizations of 1,1-disubstituted-2,5-dibromo-3,4-diphenylsiloles such as 1,1-dimethyl-2,5-dibromo-3,4-diphenylsilole, 1,1-diethyl-2,5-dibromo-3,4-diphenylsilole, 1,1-diisopropyl-2,5-dibromo-3,4-diphenylsilole, and 1,1-dihexyl-2,5-dibromo-3,4-diphenylsilole were performed to yield poly(1,1-disubstituted-3,4-diphenyl-2,5-silole)s containing fluorescent aromatic chromophore groups such as phenyl and silole in the polymer main chain: poly(1,1-dimethyl-3,4-diphenyl-2,5-silole), poly(1,1-diethyl-3,4-diphenyl-2,5-silole), poly(1,1-diisopropyl-3,4-diphenyl-2,5-silole), and poly(1,1-dihexyl-3,4-diphenyl-2,5-silole), respectively. The obtained materials are highly soluble in common organic solvents such as chloroform and tetrahydrofuran. Fourier-transform infrared spectra of all the polymers have characteristic C=C stretching frequencies at $1620-1628cm^{-1}$. The prepared organosilicon polymers exhibit strong absorption maximum peaks at 273-293 nm in the tetrahydrofuran solution, showing a red-shift of 18-34 nm relative to those of the monomer, strong excitation maximum peaks at 276-303 nm, and strong fluorescence emission maximum bands at 350-440 nm. Thermogravimetric analysis shows that most of the polymers are stable up to $200^{\circ}C$ with a weight loss of 6-16% in nitrogen.

• Bulletin of the Korean Chemical Society
• /
• 제34권2호
• /
• pp.515-518
• /
• 2013

We present synthesis of a new kind of organic-inorganic hybrid polymer, poly xylene-hexamethyltrisiloxane hybrid (PXS) by a new synthetic way from o-xylene and 1,1,3,3,5,5-hexamethyltrisiloxane. The merged molecular structure of the two monomeric components for the PXS polymer was confirmed by $^{13}C$- and $^1H$-NMR, and FT-IR. Its optical absorption and emission properties were investigated by UV-vis absorption and photoluminescence (PL) spectroscopy. The PXS exhibits absorption at 265 nm which is the same with the o-xylene but tailing up to nearly 400 nm, which is maybe related the polymeric structure of the PXS. For the PL investigation, the PXS shows red-shift of the peak from 288 nm (o-xylene) to 372 nm in the case of excitation at 265 nm, at which both PXS and o-xylene have sufficiently high absorption for excitation. When 325-nm laser is used for excitation, the PXS shows a broader peak at 395 nm compared to the excitation at 265 nm and the o-xylene shows no luminescence probably due to the lack of absorption at 325 nm.

• 공업화학
• /
• 제9권6호
• /
• pp.791-797
• /
• 1998

유기 규소계 프리세라믹 고분자로서 열적 안정성을 향상시키고 우수한 성형성을 보유하는 새로운 지르코늄 혼성 폴리카르보실란을 합성하였다. 이를 열안정화 및 열처리를 거쳐 이들을 세라믹화하는 동안의 산화 안정성(불융화), 기계적 특성 등을 고찰하였다. 합성된 지르코늄 혼성 폴리카르보실란을 $250{\sim}270^{\circ}C$ 사이에서 용융방사하여 섬유화 하였으며 polyzirconocarbosilane(PZC) 고분자의 평균 분자량이 1000에서 1400이하, 분산도가 2보다 작은 경우에 방사성이 우수하였다. 안정화 공정을 섬유에 대해 공기중 산화방법으로 $140^{\circ}C$에서 $200^{\circ}C$ 사이에서 수행하였다. PZC 세라믹 섬유의 역학적 특성은 전구체 물질인 PZC 섬유의 안정화 온도에 좌우되고 그 최적 안정화 온도는 PZC의 분자량에 따라 달라지게 됨을 알았다. PZC 세라믹 섬유가 우수한 인장 강도를 나타내기 위해서는 안정화 섬유가 일정한 겔분율을 갖는 것이 필요하다는 것을 알았다.

• 한국재료학회지
• /
• 제10권1호
• /
• pp.21-28
• /
• 2000

내열금속인 W, Ti와 이들의 질화물인 $W_2$N, TiN 박막을 이용하여 탄화규소 ohmic 접촉을 연구하였다. 열처리 온도에 따른 고온 안정성과 전기적 특성 및 상호 확산 억제 특성을 고찰함으로써 이들 질화물의 고온에서 안정한 ohmic 접촉으로 이용가능성을 조사하였다. 새로운 유기화합물 원료인 bis-trimethylsilylmethane을 이용하여 화학기상 증착법으로 증착한 단결정 $\beta$-SiC 박막과 W이 가장 낮은 접촉 비저항, 2.17$\times$10(sup)-5Ω$\textrm{cm}^2$를 보였으며, Ti 계열은 상대적으로 높은 접촉 비저항 값을 나타내었다. 이들 전극 위에 산화 방지막으로 Pt 박막을 증착함으로써 전극의 산화를 막을 수 있었으며, 질화물 전극은 고온에서 금속접촉에 비해 안정한 전기적 특성을 나타내었고, 상호 확산 방지 특성 면에도 우수한 특성을 지니고 있음을 알 수 있었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
• /
• pp.80-80
• /
• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.