• Title/Summary/Keyword: organic memory

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Film and the Politics of Post-memory in Chile's No and Korea's The Attorney (칠레의 와 한국의 <변호인>, 영화와 포스트메모리의 정치)

  • Park, Jungwon
    • Cross-Cultural Studies
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    • v.44
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    • pp.29-58
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    • 2016
  • 'Post-memory' is the act of remembering traumatic events in history by subsequent generations who have not had direct experiences or relations with them. For this reason, the narratives of 'post-memory' are considered as re-interpretations of the past deeply influenced by current perspectives and concerns. The Chilean film NO goes back to the Referendum of 1988 in order to examine the "NO campaign" which was opposed to another eight years of continuation of the Pinochet regime. Although this campaign contributed significantly to the Chilean democratization, the filmmaker does not just celebrate it: rather he attempts to cast a critical reflection on its strategies that eventually turned democracy into a "commodity" by deploying commercial language and marketing tools for characterizing and describing it. On the other hand, the Korean movie The Attorney sheds light on the story of an attorney who, during the military regime in the 1980's, became a human rights lawyer when he tried to advocate for university students accused of violating national security law. This film reconstitutes the meaning of democracy built upon the logic of "common-sense" that privileges freedom and fundamental human rights over Statism. Despite the different historical contexts between Chile and South Korea, these two movies retell the history of a dictatorship that ended a couple of decades ago. In doing so, they raise questions about history, memory and democracy in order to deepen the understanding of current social and political circumstances while placing an emphasis on the roles and responsibilities of intellectuals during the transition to democracy and democratic consolidation.

Metal-Organic Chemical Vapor Deposition of $Pb(Zr_xTi_{1-x})O_3$ Thin Films for High-Density Ferroelectric Random Access Memory Application

  • Lee, June-Key;Ku, June-Mo;Cho, Chung-Rae;Lee, Yong-Kyun;Sangmin Shin;Park, Youngsoo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.3
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    • pp.205-212
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    • 2002
  • The growth characteristics of metal-organic chemical vapor deposition (MOCVD) $Pb(Zr_xTi_{1-x})O_3 (PZT) thin films were investigated for the application of high-density ferroelectric random access memories (FRAM) devices beyond 64Mbit density. The supply control of Pb precursor plays the most critical role in order to achieve a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, $Ir/IrO_2/PZT(100nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of $~28{\mu}C/textrm{cm}^2$ and coercive voltage of 0.8V at 2.5V. Other issues such as step coverage, compositional uniformity and low temperature deposition was discussed in viewpoint of actual device application.

Structural and C-V characteristics of SrTiO$_3$ /PbTiO$_3$ thin film deposited on Si (Si 기판위에 증착한 SrTiO$_3$ /PbTiG$_3$ 고용체 박막의 구조적 특성 및 C-V 특성)

  • 이현숙;이광배;김윤정;박장우
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.71-74
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    • 2000
  • Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

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Volatile Organic Compounds Concentrations and Its Personal Exposure in Indoor and Outdoor Environments in Summer (하계 실내 및 실외환경의 공기 중 휘발성 유기화합물 농도 및 개인노출)

  • 양원호;손부순;박종안;장봉기;박완모;김윤신;어수미;윤중섭;류인철
    • Journal of Environmental Science International
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    • v.12 no.9
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    • pp.967-976
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    • 2003
  • Volatile organic compounds (VOCs) are present in essentially all natural and synthetic materials from petrol to flowers. In this study, indoor and outdoor VOCs concentrations of houses, offices and internet-cafes were measured and compared simultaneously with personal exposures of each 50 participants in Asan and Seoul, respectively. Also, factors that influence personal VOCs exposure were statistically analyzed using questionnaires in relation to house characteristics, time activities, and health effects. All VOCs concentrations were measured by OVM passive samplers (3M) and analyzed with GC/MS. Target pollutants among VOCs were Toluene, o-Xylene, m/p-Xylene, Ethylbenzene, MIBK, n-Octane, Styrene, Trichloroethylene, and 1,2-Dichlorobenzene. Indoor and outdoor VOCs concentrations measured in Seoul were significantly higher than those in Asan except Ethylbenzene. Residential indoor/outdoor (I/O) ratios for all target compounds ranged from 0.94 to 1.51 and I/O ratios of Asan were a little higher than those of Seoul. Relationship between personal VOCs exposure, and indoor and outdoor VOCs concentrations suggested that time-activity pattern could affect the high exposure to air pollutant. Factors that influence indoor VOCs level and personal exposure with regard to house characteristics in houses were building age, inside smoking and house type. In addition insecticide and cosmetics interestingly affected the VOCs personal exposure. Higher exposure to VOCs might be caused to be exciting increase and memory reduction, considering the relationship between measured VOCs concentrations and questionnaire (p<0.05).

Synthesis of Membrane Forming Material for the Fabrication of Conducting Langmuir-Blodgett Film and Layering the Film. (전도성 Langmuir-Blodgett 막 제작을 위한 성막물질의 합성과 막의 누적)

  • Shin, Dong-Myung;Sohn, Byung-Chung;You, Duck-Sun;Choi, Kang-Hoon;Kang, Dou-Yol
    • Proceedings of the KIEE Conference
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    • 1991.07a
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    • pp.238-240
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    • 1991
  • Langmuir-Blodgett(L.B) method is one of the most possible candidate for the fabrication of the micro scale memory or electrical devices. As for a fundamental study on the conduction mechanism in the organic thin membrane, N-alkyl quinolium-TCNQ complexes were synthesized and their physical properties were examined spectroscopically. LB film was produced by using Moving Wall Type LB Apparatus. The average area per molecule (N-docosylquinolium-TCNQ) was $67.97{\AA}^2$ which is ${\AA}^2$ larger than N-docosyl quinolium-TCNQ.

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The Properties of YMn$_3$ ceramics (YMn$_3$ 세라믹의 물리적 특성)

  • 김재윤;김부근;김강언;정수태
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.267-270
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    • 1998
  • We measured the dielectric properties with YMnO$_3$ ceramics using solution method based procedure via by citrate. The crystalline phases were determined using XRD. Also we observed morphologies of YMnO$_3$ ceramics using SEM. We proved the structure of YMnO$_3$ ceramics which is hexagonal. But lots of pores were observed the microstructure. It would be considered as volatile organic. The maximum density of YMnO$_3$ ceramics is obtained sintering temperature 135$0^{\circ}C$ and the ratio 0.95/1.05 of Y/Mn. But even though the density we obtained is the highest, that is lower than theoretical density because of remaining organics by citric acid. Dielectric constant and dissipation factor were improved as increasing sintering temperature and the Y/Mn ratio (0.95/1.05)

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Donguibogam as a Pioneer of Mind-Body Medicine - Forward-looking Value of Donguibogam as a Documentary Heritage (심신의학(Mind-Body Medicine)의 선구로서의 "동의보감(東醫寶鑑)" - "동의보감(東醫寶鑑)"의 의료철학이 지닌 미래적 가치)

  • Hwang, Gyeong-Sik
    • Korean Journal of Oriental Medicine
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    • v.15 no.1
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    • pp.23-29
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    • 2009
  • The value of Dongeuibogam has been officially acknowledged as a Memory of the World. However, we should not overlook the forward-looking value of Dongeuibogam in addition to its backward-looking value. For the past 200 years, Western medicine has attained great achievements in therapeutic medicine based on Descartes' mind-body dualism, which focuses on the body as a separate entity from the mind. Recently, Western medicine modified its previously one-sided track into a new orientation towards holistic mind-body medicine in recognition of the two as an organic whole. At this point in time, it is essential to draw attention to the forward-looking value of Dongeuibogam, which pioneered mind-body medicine based on the medicinal philosophy of Jing Qi Shen more than 400 years ago.

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The Properties of YMnO$_3$ ceramics (YMnO$_3$ 세라믹의 물리적 특성)

  • 김재윤;김부근;김강언;정수태
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 1998.10a
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    • pp.267.1-270
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    • 1998
  • We measured the dielectric properties with YMnO$_3$ ceramics using solution method based procedure via by citrate. The crystalline phases were determined using XRD. Also we observed morphologies of YMnO$_3$ ceramics using SEM. We proved the structure of YMnO$_3$ ceramics which is hexagonal. But lots of pores were observed the microstructure. It would be considered as volatile organic. The maximum density of YMn03 ceramics is obtained sintering temperature 135$0^{\circ}C$ and the ratio 0.95/1.05 of Y/Mn. But even though the density we obtained is the highest, that is lower than theoretical density because of remaining organics by citric acid. Dielectric constant and dissipation factor were improved as increasing sintering temperature and the Y/Mn ratio (0.95/1.05)

Study of Back-Up Electric Power Source as a Role for Instant Power Industry Safety by Super Capacitor (순간 정전시 산업안전용 보조전원 역할의 Super Capacitor에 관한 연구)

  • 김상길;김종철;허진우;김경민;이용욱;강안수
    • Proceedings of the Safety Management and Science Conference
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    • 1999.11a
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    • pp.345-354
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    • 1999
  • A new type of capacitor named "Super Capacitor" has been developed, in which the properties of electric double layer formed at the interface of activated carbon electrode- liquid organic electrolyte is applied. This capacitor is small In size, light in weight, wide In temperature range(-25~$70^{\circ}C$), large in charge-discharge capability and good in voltage preservation. And this super capacitor is applied as a power back-up for electricity failure in volatile memory devices etc., a power source for a short time and a power source for operating actuators. At present the development of high power back-up types of the capacitor system and improvement of their characteristics are being actively conducted in order to find wider applications.lications.

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Fabrication of Functional Organic Ultrathin (LB) Film and Synthesis of Film Material - N-Alkylquinolium TCNQ Complexes - (기능성 유기초박막의 제작기술과 성막물질의 합성 연구)

  • Shin, Dong-Myung;Sohn, Byung-Chung;Kim, Jung-Soo;Kang, Dou-Yol
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.7
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    • pp.753-759
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    • 1992
  • For the fabrication of the microscale memory or electrical devices, Langmuir-Blodgett(LB) method is the most possible candidate. N-Alkylquinolium-TCNQ compounds were synthesized. The structure of the compounds were identified by the NMR spectroscopy and the purity were checked to be good by the elemental analysis. The surface pressure($\pi$) was measured at the air-water interface. The isotherm showed two transitions at 30mN/m and 45mN/m. The LB films were deposited by the home-made Kuhn type apparatus. The transfer ratio($\tau$) of the deposition was more than 0.95 for the up-stroke and less than 0.4 for the down-stroke. The absorbance peaks of the LB films appear at around 420nm and 700-820nm.