• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.447-448
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• 2005

Recently, organic light emitting diodes(OLEDs) is widely used as one of the information display techniques. We synthesized 2-(2-hydroxyphenyl)benzoxazole($Zn(HPB)_2$). We studied the luminescent properties of OLEDs using $Zn(HPB)_2$. The ionization potential(IP) and the electron affinity(EA) of $Zn(HPB)_2$ investigated using cyclic-voltammetry(C-V). The JP, EA and Eg were 6.5eV, 3.0eV and 3.5eV, respectively. The PL and EL spectra of $Zn(HPB)_2$ were observed at the wavelength of 4S0nm. We used $Zn(HPB)_2$ as an emitting layer and hole blocking layer. At the experiment about hole blocking effect, we inserted $Zn(HPB)_2$ between emitting material layer(EML) and cathode, and hole transport layer(HTL) and emitting material layer(EML). We measured current density-voltage and luminance-voltage characteristics at room temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1819-1824
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• 2006

A microlens arrays formed by thermal reflow method is attached to an OLED device and the light extraction efficiency which includes luminance and power information is determined by adjusting the area ratio and the height ratio.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.955-962
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• 2005

Power efficiency, lifetime and stable manufacturing processes are the crucial parameters for the success of organic light emitting diodes (OLEDs) in display and lighting applications. Highest power efficiencies of PIN-OLEDs for all principal colours and for bottom and top emission OLED structures have been demonstrated. The PIN structure, which means the incorporation of intentionally doped charge carrier transport layer in a suitable OLED layer setup, lowers the operating voltage to achieve highest power efficiencies. Up to now the n-doping of the electron transport layer has been done by alkali metal co-deposition. This has main draw-backs in terms of manufacturability, since the handling of large amounts of pure Cs is a basic issue in production lines. Here we present in detail results on PIN-OLEDs comprising a newly developed molecular n-dopant. All the previous OLED performance data based on PIN-OLEDs with alkali metal doping could be reproduced and will be further improved in the future. Hence, for the first time, a full manufacturing compatible PIN-OLED is available.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.413-413
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• 2007

In recent years, flexible display devices such as liquid crystal display (LCD), organic light emitting diode (OLED), etc. have attracted considerable interest in a wide variety of applications. Polymer substrate is absolutely necessary to realize this kind of flexible display devices. Using the polymer as a substrate, there are lots of advantages including not only mechanical flexibility such as rolling and bending characteristics but also light weights, low cost and so on. In detail, thickness and weights is only one forth and one second of glass substrate, respectively. However, it needs low temperature below $150^{\circ}C$ in the fabrication process comparing to conventional deposition process. The polymer substrate is not thermally stable as much as the glass substrate so that some deformation can be occurred according to variation of temperature. In particular, performance of devices can be easily deteriorated by shrinkage of substrate when heating it. In this paper, pre-annealing and deposition of buffer layer was introduced and studied to solve previously mentioned problems of the shrinkage and followed shear stress.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1593-1598
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• 2011

Blue fluorescent materials based on 9,9'-diethyl-2-diphenylaminofluorene derivatives were synthesized and characterized. These materials were used as the blue dopant materials for the emitting layer of organic light-emitting diode devices with the following device structure: ITO/DNTPD (40 nm)/NPB (20 nm)/MADN: dopants (2%, 20 nm)/$Alq_3$ (40 nm)/Liq (1.0 nm)/Al. All devices exhibited highly efficient blue emission. One of these devices exhibited a maximum luminance, luminous efficiency, power efficiency and CIE x, y coordinates of 8400 $cd/m^2$, 8.10 cd/A at 20 $mA/cm^2$, 3.36 lm/W at 20 $mA/cm^2$ and (0.151, 0.159), respectively. A deep blue device with CIE coordinates of (0.152, 0.139) showed the maximum luminance, luminous efficiency and power efficiency of 8630 $cd/m^2$, 6.31 cd/A at 20$mA/cm^2$ and 2.62 lm/W at 20 $mA/cm^2$, respectively.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.15-19
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• 2009

A high efficient organic red light emitting device with structure of DNTPD/TAPC/$Bebq_2$ :[$(pq)_2Ir(acac)$, SFC-411]/SFC-137 was fabricated on the plastic substrate, which can be applied in the fields of flexible display and illumination. In the device structure, N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD] as a hole injection layer and 1,1-bis-(di-4-tolylaminophenyl) cyclohexane [TAPC] as a hole transport were used. Bis(10-hydroxybenzo[h]quinolinato) beryllium complex [$Bebq_2$] was used as a light emitting host material. The host material, $Bebq_2$ was doubly doped with volume ratio of 7% iridium(III)bis-(2-phenylquinoline)acetylacetonate[$(pq)_2$Ir(acac)] and 3% SFC-411[red phosphor dye coded by the proprietary company]. And then, SFC-137 was used as an electron transport layer. The luminous intensity and current efficiency of the fabricated device were $22,780\;cd/m^2$ at 9V and 17.3 cd/A under $10,000\;cd/m^2$, respectively. The maximum current efficiency of the device was 22.4cd/A under $580\;cd/m^2$.

• Resources Recycling
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• v.21 no.3
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• pp.65-73
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• 2012

There are several kinds of displays such as liquid crystal display (LCD), cathode ray tube (CRT), plasma display panel(PDP), light emitting diode (LED), organic light emitting diode (OLED), etc. Nowadays, recycling technologies of waste displays have been widely studied from economy and efficiency points of view. In this paper, patents and literature on the recycling technologies of the waste displays have been comprehensively analyzed. The search was limited to the open patents of USA (US), European Union (EU), Japan (JP), and Korea (KR) and SCI journals published from 1980 to 2011. Patents and journals were systematically compiled and collected using key-words search and filtered by pre-set filtering criteria. The trends of the patents and journals were thus analyzed according to the years, countries, companies, and technologies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.362-366
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• 2006

OLEDs(Organic Light Emitting Diodes) are attractive as alternative display components because of their relative merits of being self-emitting, having large intrinsic viewing angle and fast switching speed. But because of their relatively short history of development, much remains to be studied in terms of their basic device physics and design, manufacturing techniques, stability and so on. We investigated electrical properties of N, N-diphenyl-N, N bis (3-methyphenyl-l,1'-biphenyl-4,4'-diamine (TPD) and tris-8-hydroxyquinoline aluminum$(Alq_3)$ when their thicknesses were changed variedly from 3:7 to 5:5 of their thickness ratios. And we also studied properties of OLED depend on their deposition rate between $0.05{\sim}0.2$ nm/s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.275-276
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• 2005

Organic Light Emitting Diodes(OLEDs) are attractive as alternative display components because of their relative merits of being self-emitting, having large intrinsic viewing angle and fast switching speed. But because of their relatively short history of development, much remains to be studied in terms of their basic device physics and design, manufacturing techniques, stability and so on. We invested electrical properties of N,N-diphenyl-N,N bis (3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) and tris-8-hydroxyquinoline aluminum($Alq_3$) when their thicknesses were changed variedly from 3:7 to 7:3 of their thickness ratios. And we also studied properties of OLEDs depend on their deposition rate between 0.05$\sim$0.2 [nm/s].

• Journal of Information Display
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• v.6 no.2
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• pp.12-15
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• 2005

We propose a new pixel design for active matrix organic light emitting diode (AM-OLED) displays using hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a-Si:H TFTs and OLED.