• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.889-892
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• 2003

Effects of $N_{2}$ plasma treatment of the Al bottom cathode on the characteristics of top emission inverted organic light emitting diodes (TEIOLEDs) were studied. TEIOLEDs were fabricated by depositing an Al bottom cathode, a tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$ emitting layer, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'diamine (TPD) hole transport layer, and an indium tin oxide (ITO) top anode sequentially. The Al bottom cathode layer was subjected to $N_{2}$ plasma treatment before deposition of the $Alq_{3}$ layer. X-ray photoelectron spectroscopy suggested that the existence of and the amount of $AIN_x$ between the $Alq_{3}$ emitting layer and the Al bottom cathode significantly affect the characteristics of TEIOLEDs. The maximum external quantum efficiency of the TEIOLED with an Ai bottom cathode subjected to $N_{2}$ plasma treatment for 30 s was about twice as high as that of the TEIOLED with an untreated Al bottom cathode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.444-445
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• 2007

IZO/Al multilayer anode films for flexible top emitting organic light emitting diodes (TOLEDs) were grown on PEN (polyethylen-enaphthelate) substrate using twin target sputter (TTS) system. To investigate electrical and optical properties of IZO/Al multilayer films, 4-point probe method and UV/Vis spectrometer were used, respectively. From a IZO/Al multilayer films with 100nm-thick Al, sheet resistance of $1.4{\Omega}/{\square}$ and reflectance of above 62% at a range of 500~550nm wavelength could be obtained, In addition, structural and surface properties of IZO/Al multilayer films were analyzed by XRD (X-ray diffraction) and FESEM (field emission scanning electron microscopy) and AES (auger electron spectroscope), respectively. Moreover, flexibility of IZO/Al multilayer anode films were examined by bending test method.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3433-3436
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• 2012

• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1391-1394
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• 2011

• Bulletin of the Korean Chemical Society
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• v.32 no.12
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• pp.4419-4422
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• 2011

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1216-1219
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• 2009

Recently,electroluminescence devices based on organic semiconductors have made considerable progress. Displays based on organic light emitting diodes (OLED) are commercially available. To gain broader acceptance, the performance of OLED devices has to be further improved, in particular for lighting. This article discusses the possibility to use controlled electrical doping for improving the properties of devices and new approaches for highly efficient white OLED.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.66-69
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• 2007

We have investigated printing techniques for processing organic light-emitting diodes (OLEDs). We succeeded to gravure print uniform organic thin films as well as screen print low work function cathode for OLED structure. Furthermore, by using roll-to-roll manufacturing methods, we have been able to fabricate all-printed flexible OLED demonstrator.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.623-624
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• 2004

The coating and estimation of gas and moisture barriers on polymer and glass substrates are receiving very much attention in passivation of organic light emitting devices (OLEDs). In this study, the encapsulation and lifetime measurement techniques of OLEDs were presented. The degradation mechanisms of bare and encapsulated OLEDs were investigated by the visual lifetime measurement (VLM) system with the parameters such as a pixel luminance(L), a luminance rms roughness(dL), a brightness area ratio(R), an edge degradation depth(D), etc.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1703-1705
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• 2007

Before the ultra-violet glue encapsulation, the research evaporated LiF thin film on device surface to be the extra packaging layer for improving the lifetime of organic light-emitting diode. The formula of UV glue was specially developed. We found 100 nm LiF is the optimum thickness. The best lifetime obtained by using LiF and special UV glue is 2.4 times longer than those by commercial UV glue.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1407-1410
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• 2007

This work reports on three primary color fluorescent white organic light emitting diode (WOLED) with simple device structure where only a part of the hole transporting layer was doped with dye. The maximum luminance of the device reaches $35000\;cd/m^2$ at a drive voltage below 11V and external quantum efficiency of the device is above 1% in the wide range of luminance from 10 to $35000\;cd/m^2$ and reaches its highest 1.6% at $500\;cd/m^2$. The chromaticity coordinate shift of the device is negligible in this wide range of luminance. The blue shift of emission color with an increase of current density was attributed to the narrowing of recombination zone width with raise of current density.