• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.417-419
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• 1995

Polymer-coated piezoelectric crystals were applied to analyze response characteristic of organic gases. AT-cut quartz crystal with 9 MHz resonant frequency can measure mass of 1 nanogram. Flow type gas-sensing system was used in this experiment. Flow type gas-sensing system has very simple apparatus and shows very fast frequency response for injection of organic gas. We have made parameter using relaxation ratio of frequency response for organic gas. Consequently, we found that the parameter had no relation with quantity of gas injection and dipping.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.278-283
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• 2015

In this work, the electrical bistability of an organic CT complex is demonstrated and the possible switching mechanism is proposed. 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) and tetracyanoquinodimethane (TCNQ) are used as an organic donor and acceptor, respectively, and poly-methamethylacrylate (PMMA) is used as a polymeric matrix for spin-coating. A device with the Al/($Al_2O_3$)/PMMA:BCP:TCNQ[1:1:0.5 wt%]/Al configuration demonstrated bistable and switching characteristics similar to Ovshinsky switching with a low threshold voltage and a high ON/OFF ratio. An analysis of the current-voltage curves of the device suggested that electrical switching took place due to the charge transfer mechanism.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.465-465
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• 2013

Inorganic 물질인 SiO2 dielectric 위에 organic dielectric PVP (4-vinyphenol)를 spin coating으로 올려, inorganic/organic dielectric 형태의 double layer구조로 High-performance amorphous indiumgallium zinc oxide thin-film transistors (IGZO TFT)를 제작하여 보았다. SiO2 dielectric을 buffer layer로 80 nm, PVP는 10Wt% 400 nm로 구성하였으며, 200 nm single SiO2 dielectric과 동일한 수준의 leakage current 특성을 MIM Capacitor 구조를 통해서 확인할 수 있었다. 이 소자의 장점은 용액공정의 도입으로 공정 시간의 단축 및 원가 절감을 이룰 수 있으며, dielectric과 channel 사이의 균일한 interface의 형성으로 interface trap 개선 및 Yield 향상의 장점을 갖는다. 우리는 실험을 통해서 SiO2 buffer layer가 수직 electric field에 의한 leakage current을 제어하고, PVP dielectric은 interface를 개선하는 것을 확인하였다. Vth의 negative shift 및 slope의 향상으로 구동전압이 줄어들고, 균일한 I-V Curve 형성을 통해서 Process Yield의 향상을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.431-432
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• 2008

We have investigated low temperature sintering characteristics of organic Ag complex. Organic Ag complex was coated on the glass substrate by spin coating method. The coated Ag complex was sintered in an air atmosphere. The sintering temperature was varied from 100 to $300^{\circ}C$ and sintering time was varied from 1 to 4 min. The thickness of the coated film was significantly decreased as the film was sintered at the temperature between 110 and $120^{\circ}C$. The sintered Ag film at temperature higher than $115^{\circ}C$ shows very low sheet resistance less than 1 ${\Omega}{/\square}$.

• Korean Chemical Engineering Research
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• v.53 no.3
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• pp.350-356
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• 2015

The effects of the zinc oxide (ZnO) preparing process on the performance of inverted organic photovoltaic cells (OPVs) were explored. The morphology and size of ZnO nanoparticles were controlled, leading to more efficient charge collection from device and higher electron mobility compared with nanospheres. Nanosized ZnO particles were synthesized by using zinc acetate dihydrate and potassium hydroxide in methanol. Also, water was added into the reaction medium to control the morphology of ZnO nanocrystals from spherical particles to rods, and $NH_4OH$ was used to prevent the gelation of dispersion. Solution-processed ZnO thin films were deposited onto the ITO/glass substrate by using spin coating process and then ZnO films were used as an electron transport layer in inverted organic photovoltaic cells. The analyses were carried out by using TEM, FE-SEM, AFM, DLS, UV-Vis spectroscopy, current density-voltage characteristics and solar simulator.

• Corrosion Science and Technology
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• v.6 no.2
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• pp.68-73
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• 2007

The toxicity of chromium that is used to impart corrosion resistance to galvanized steel created environmental and health-related concerns and generated a great deal of interest in developing chrome-free treatment coatings. In the present work, organic-inorganic composite coatings were used to coat electrogalvanized steel (EG) sheets for corrosion protection without degrading its weldability property. The new coatings composed of specially modified polyurethane dispersion hybridized with silicate and unique inorganic-organic inhibitors were developed during this work. It was found that about $1{\mu}m$ thickness of coating layer is secure enough in corrosion resistance of flat and formed part even after alkaline degreasing. Overall chemical resistances including fingerprint resistance and paint adhesion property were satisfied with the test specification of Sony technical standard of SS-00260-2002. Therefore, it is concluded that the newly developed chrome-free product can replace the conventional chromated product.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.451-456
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• 2024

Organic photovoltaic (OPV) devices have attracted attention due to their high efficiency and simple manufacturing process. Applying an overlayer to OPV devices is one way to improve their performance because it can improve charge extraction and suppress vertical phase separation. In addition, dichloromethane (DCM) was used as an orthogonal solvent to minimize the effect on other layers. However, an coating problems due to the use of DCM were found, which affects surface morphology as rough or peeling. Additional research efforts are needed to solve these problems, and optimal results are expected to be obtained by utilizing various buffer layers or selective organic solvents.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.185-190
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• 2003

In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.61-62
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• 2006

In this paper, it was demonstrated that organic thin- film transistors (OTFTs) were fabricated with the organic adhesion layer between an organic semiconductor and a gate insulator by vapor deposition polymerization (VDP) processing. In order to form polymeric film as an adhesion layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were c1early observed in the electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure. Field effect mobility, threshold voltage, and on-off current ratio in 15-nm-thick organic adhesion layer were about $0.5\;cm^2/Vs$, -1 V, and $10^6$, respectively. We also demonstrated that threshold voltage depends strongly on the delay time when a gate voltage has been applied to bias stress.