• Title/Summary/Keyword: orbit

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Research of Satellite Autonomous Navigation Using Star Sensor Algorithm (별 추적기 알고리즘을 활용한 위성 자율항법 연구)

  • Hyunseung Kim;Chul Hyun;Hojin Lee;Donggeon Kim
    • Journal of Space Technology and Applications
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    • v.4 no.3
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    • pp.232-243
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    • 2024
  • In order to perform various missions in space, including planetary exploration, estimating the position of a satellite in orbit is a very important factor because it is directly related to the success rate of mission performance. As a study for autonomous satellite navigation, this study estimated the satellite's attitude and real time orbital position using a star sensor algorithm with two star trackers and earth sensor. To implement the star sensor algorithm, a simulator was constructed and the position error of the satellite estimated through the technique presented in the paper was analyzed. Due to lens distortion and errors in the center point finding algorithm, the average attitude estimation error was at the level of 2.6 rad in the roll direction. And the position error was confirmed by attitude error, so average error in altitude direction was 516 m. It is expected that the proposed satellite attitude and position estimation technique will contribute to analyzing star sensor performance and improving position estimation accuracy.

A comprehensive comparison of IMRT and VMAT plan quality for orbital lymphoma (안와 림프종 환자의 방사선치료를 위한 세기조절방사선치료와 용적세기조절회전치료의 전산화 치료계획에 대한 고찰)

  • Yoo, Soon Mi;Ban, Tae Joon;Yun, In Ha;Baek, Geum Mun;Kwon, Kyung Tae
    • The Journal of Korean Society for Radiation Therapy
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    • v.26 no.2
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    • pp.281-287
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    • 2014
  • Purpose : The purpose of this study is to compare the plan quality of volumetric-modulated arc therapy (VMAT) and intensity-modulated radiation therapy (IMRT) for the treatment of orbital lymphoma. IMRT, partial single arc(SA) and partial-double arc(DA) VMAT plans for four patients with orbital lymphoma treated at our institution were used for this study. Conformity Index(CI), Paddick's Conformity Index(PCI) and Homogeneity Index(HI) of planning target volume(PTV) were used to evaluate dosimetric quality of each plan. The Monitor Unit (MU), treatment time and dose of ipsilateral lens from each type of plan were measured for comparison. Materials and Methods : The CI of PTV for IMRT, SA and DA were measured as 0.88, 0.86, 0.92. The PCI of DA was the lowest as 1.33. Also HI of DA was the lowest in measured plans as 1.15. Mean dose of lens, lacrimal gland, optic chiasm, the opposite optic nerve and both orbit was analyzed with V30, V20, V10, V5. The result showed that the lowest dose in IMRT highest in SA in opposite lens, lacrimal gland, optic nerve, orbit. Results : Treatment time and average MU of IMRT was about three times higher than SA. Conclusion : Considering the superior plan quality as well as the delivery efficiency of VMAT compared with that of IMRT, VMAT may be the preferred modality for treating orbital lymphoma.

Feasibility study of the usefulness of SRS thermoplastic mask for head & neck cancer in tomotherapy (두경부 종양의 토모치료 시 정위적방사선수술 마스크의 유용성 평가에 대한 연구)

  • Jeon, Seong Jin;Kim, Chul Jong;Kwon, Dong Yeol;Kim, Jong Sik
    • The Journal of Korean Society for Radiation Therapy
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    • v.26 no.2
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    • pp.355-362
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    • 2014
  • Purpose : When head&neck cancer radiation therapy, thermoplastic mask is applied for patients with fixed. The purpose of this study is to evaluate usefulness of thermoplastic mask for SRS in tomotherapy by conparison with the conventional mask. Materials and Methods : Typical mask(conventional mask, C-mask) and mask for SRS are used to fix body phantom(rando phantom) on the same iso centerline, then simulation is performed. Tomotherapy plan for orbit and salivary glands is made by treatment planning system(TPS). A thick portion and a thin portion located near the treatment target relative to the mask S-mask are defined as region of interest for surface dose dosimetry. Surface dose variation depending on the type of mask was analyzed by measuring the TPS and EBT film. Results : Surface dose variation due to the type of mask from the TPS is showed in orbit and salivary glands 0.65~2.53 Gy, 0.85~1.84 Gy, respectively. In case of EBT film, -0.2~3.46 Gy, 1.04~3.02 Gy. When applied to the S-mask, in TPS and Gafchromic EBT3 film, substrantially 4.26%, 5.82% showed maximum changing trend, respectively. Conclusion : To apply S-mask for tomotherapy, surface dose is changed, but the amount is insignificant and be useful when treatment target is close critical organs because decrease inter and intra fractional variation.

The study of growth and characterization of $AgInSe_2$ single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy(HWE)에 의한 $AgInSe_2$단결정 박막 성장과 특성에 관한 연구)

  • 홍광준
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.2
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    • pp.197-206
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    • 1999
  • The stochiometric mixture of evaporating materials for the $AgInSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the $AgInSe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $C_0$ were 6.092 $\AA$ and 11.688 $\AA$, respectively. To obtain the single crystal thin films of AgInSe$_2$, the mixed crystal was deposited on thoroughly etched semi-insulator GaAs(100) substrate by HWE system. The source and substrate temperature were fixed to $610^{\circ}C$ and $450^{\circ}C$ respectively, and the thickness of the single thin films was obtained to 3.8 $\mu\textrm{m}$. The crystallization of single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray dirrfaction (DCXD). The Hall effect was measured by the method of van der Pauw and carrier density and mobility dependence on temperature were studied. The carrier density and mobility of $AgInSe_2$single crystal thin films deduced from Hall data are $9.58{\times}10^{22} electron/m^3,\; 3.42{\times}10^{-2}m^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInSe_2$single crystal thin film, the spin orbit coupling $\Delta$So and the crystal field splitting $\Delta$Cr were obtained to 0.29 eV and 0.12 eV at 20 K respectively. From PL peaks measured at 20 K, 881.1 nm (1.4071 eV) and 882.4 nm (1.4051 eV) mean $E_x^U$ the upper polariton and $E_x^L$ the lower polariton of the free exciton $(E_x)$, also 884.1 nm (1.402 eV) express $I_2 peak of donor-bound exciton emission and 885.9 nm (1.3995 Ev) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 887.5 nm (1.3970 eV) was analyzed to be PL peak due to DAP.

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Fog Detection over the Korean Peninsula Derived from Satellite Observations of Polar-orbit (MODIS) and Geostationary (GOES-9) (극궤도(MODIS) 및 정지궤도(GOES-9) 위성 관측을 이용한 한반도에서의 안개 탐지)

  • Yoo, Jung-Moon;Yun, Mi-Young;Jeong, Myeong-Jae;Ahn, Myoung-Hwan
    • Journal of the Korean earth science society
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    • v.27 no.4
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    • pp.450-463
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    • 2006
  • Seasonal threshold values for fog detection over the ten airport areas within the Korean Peninsula have been derived from the data of polar-orbit Aqua/Terra MODIS and geostationary GOES-9 during a two years. The values are obtained from reflectance at $0.65{\mu}m\;(R_{0.65})$ and the difference in brightness temperature between $3.7{\mu}m\;and\;11{\mu}m\;(T_{3.7-11})$. In order to examine the discrepancy between the threshold values of two kinds of satellites, the following four parameters have been analyzed under the condition of daytime/nighttime and fog/clear-sky, utilizing their simultaneous observations over the Seoul metropolitan area: brightness temperature at $3.7{\mu}m$, the temperature at $11{\mu}m,\;the\;T_{3.7-11}$ for day and night, and the $R_{0.65}$ for daytime. The parameters show significant correlations (r<0.5) in spatial distribution between the two kinds of satellites. The discrepancy between their infrared thresholds is mainly due to the disagreement in their spatial resolutions and spectral bands, particularly at $3.7{\mu}m$. Fog detection from GOES-9 over the nine airport areas except the Cheongju airport has revealed accuracy of 60% in the daytime and 70% in the nighttime, based on statistical verification. The accuracy decreases in foggy cases with twilight, precipitation, short persistence, or the higher cloud above fog. The sensitivity of radiance and reflectance with wavelength has been analyzed in numerical experiments with respect to various meteorological conditions to investigate optical characteristics of the three channels.

Sensitivity Experiment of Surface Reflectance to Error-inducing Variables Based on the GEMS Satellite Observations (GEMS 위성관측에 기반한 지면반사도 산출 시에 오차 유발 변수에 대한 민감도 실험)

  • Shin, Hee-Woo;Yoo, Jung-Moon
    • Journal of the Korean earth science society
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    • v.39 no.1
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    • pp.53-66
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    • 2018
  • The information of surface reflectance ($R_{sfc}$) is important for the heat balance and the environmental/climate monitoring. The $R_{sfc}$ sensitivity to error-induced variables for the Geostationary Environment Monitoring Spectrometer (GEMS) retrieval from geostationary-orbit satellite observations at 300-500 nm was investigated, utilizing polar-orbit satellite data of the MODerate resolution Imaging Spectroradiometer (MODIS) and Ozone Mapping Instrument (OMI), and the radiative transfer model (RTM) experiment. The variables in this study can be cloud, Rayleigh-scattering, aerosol, ozone and surface type. The cloud detection in high-resolution MODIS pixels ($1km{\times}1km$) was compared with that in GEMS-scale pixels ($8km{\times}7km$). The GEMS detection was consistent (~79%) with the MODIS result. However, the detection probability in partially-cloudy (${\leq}40%$) GEMS pixels decreased due to other effects (i.e., aerosol and surface type). The Rayleigh-scattering effect in RGB images was noticeable over ocean, based on the RTM calculation. The reflectance at top of atmosphere ($R_{toa}$) increased with aerosol amounts in case of $R_{sfc}$<0.2, but decreased in $R_{sfc}{\geq}0.2$. The $R_{sfc}$ errors due to the aerosol increased with wavelength in the UV, but were constant or slightly decreased in the visible. The ozone absorption was most sensitive at 328 nm in the UV region (328-354 nm). The $R_{sfc}$ error was +0.1 because of negative total ozone anomaly (-100 DU) under the condition of $R_{sfc}=0.15$. This study can be useful to estimate $R_{sfc}$ uncertainties in the GEMS retrieval.

The Significance of Registration Convention and its Future Challenges in Space Law (등록협약의 우주법상 의의와 미래과제에 관한 연구)

  • Kim, Han-Taek
    • The Korean Journal of Air & Space Law and Policy
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    • v.35 no.2
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    • pp.375-402
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    • 2020
  • The adoption and entering into force of the Registration Convention was another achievement in expanding and strengthening the corpus iuris spatialis. It was the fourth treaty negotiated by the member states of the UNCOPUOS and it elaborates further Articles 5 and 8 of the Outer Space Treaty(OST). The Registration Convention also complements and strengthens the Article 11 of the OST, which stipulates an obligation of state parties to inform the UN Secretary-General of the nature, conduct, locations, and results of their space activities in order to promote international cooperation. The prevailing purposes of the Registration Convention is the clarification of "jurisdiction and control" as a comprehensive concept mentioned in Article 5 8 of the OST. In addition to its overriding objective, the Registration Convention also contributes to the promotion and the exploration and use of outer space for peaceful purposes. Establishing and maintaining a public register reduces the possibility of the existence of unidentified space objects and thereby lowers the risk such as, for example, putting the weapons of mass destruction secretly into orbit. And furthermore it could serve for a better space traffic management. The Registration Convention is a treaty established to implement Article 5 of OST for the rescue and return of astronaut in more detail. In this respect, if OST is a general law, the Registration Convention would be said to be in a special law. If two laws conflict the principle of lex specialis will be applied. Countries that have not joined the Registration Convention will have to follow the rules concerning the registration of paragraph 7 of the Declaration by the United Nations General Assembly resolution 1721 (X V I) in 1961. UN Resolution 1721 (XVI) is essentially non-binding, but appears to have evolved into the norm of customary international law requiring all States launching space objects into orbit or beyond to promptly provide information about their launchings for registration to the United Nations. However, the nature and scope of the information to be supplied is left to the discretion of the notifying State. The Registration Convention is a treaty created for compulsory registration of space objects by nations, but in reality it is a treaty that does not deviate from existing practice because it is based on voluntary registration. With the situation of dealing with new problems due to the commercialization and privatization of the space market, issues related to the definition of a 'space object', including matter of the registry state of new state that purchased space objects and space debris matter caused by the suspension of space objects launched by the registry state should be considered as matters when amendments, additional protocols or new Registration Convention are established. Also the question of registration of a flight vehicle in the commercial space market using a space vehicle traveling in a sub-orbital in a short time should be considered.

Usefulness assessment of secondary shield for the lens exposure dose reduction during radiation treatment of peripheral orbit (안와 주변 방사선 치료 시 수정체 피폭선량 감소를 위한 2차 차폐의 유용성 평가)

  • Kwak, Yong Kuk;Hong, Sun Gi;Ha, Min Yong;Park, Jang Pil;Yoo, Sook Hyun;Cho, Woong
    • The Journal of Korean Society for Radiation Therapy
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    • v.27 no.1
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    • pp.87-95
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    • 2015
  • Purpose : This study presents the usefulness assessment of secondary shield for the lens exposure dose reduction during radiation treatment of peripheral orbit. Materials and Methods : We accomplished IMRT treatment plan similar with a real one through the computed treatment planning system after CT simulation using human phantom. For the secondary shield, we used Pb plate (thickness 3mm, diameter 25mm) and 3 mm tungsten eye-shield block. And we compared lens dose using OSLD between on TPS and on simulation. Also, we irradiated 200 MU(6 MV, SPD(Source to Phantom Distance)=100 cm, $F{\cdot}S\;5{\times}5cm$) on a 5cm acrylic phantom using the secondary shielding material of same condition, 3mm Pb and tungsten eye-shield block. And we carried out the same experiment using 8cm Pb block to limit effect of leakage & transmitted radiation out of irradiation field. We attached OSLD with a 1cm away from the field at the side of phantom and applied a 3mm bolus equivalent to the thickness of eyelid. Results : Using human phantom, the Lens dose on IMRT treatment plan is 315.9cGy and the real measurement value is 216.7cGy. And after secondary shield using 3mm Pb plate and tungsten eye-shield block, each lens dose is 234.3, 224.1 cGy. The result of a experiment using acrylic phantom, each value is 5.24, 5.42 and 5.39 cGy in case of no block, 3mm Pb plate and tungsten eye-shield block. Applying O.S.B out of the field, each value is 1.79, 2.00 and 2.02 cGy in case of no block, 3mm Pb plate and tungsten eye-shield block. Conclusion : When secondary shielding material is used to protect critical organ while irradiating photon, high atomic number material (like metal) that is near by critical organ can be cause of dose increase according to treatment region and beam direction because head leakage and collimator & MLC transmitted radiation are exist even if it's out of the field. The attempt of secondary shield for the decrease of exposure dose was meaningful, but untested attempt can have a reverse effect. So, a preliminary inspection through Q.A must be necessary.

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Growth and characterization ofZnIn$_2S_4$ single crystal thin film using hot wall epitaxy method (Hot Wall Epitaxy(HWE)에 의한 ZnIn$_2S_4$ 단결정 박막 성장과 특성)

  • 최승평;홍광준
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.4
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    • pp.138-147
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    • 2001
  • The stochiometric mixtures mixture of evaporating materials for the $ZnIn_{2}S_{4}$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_{2}S_{4}$ single crystal thin film, $ZnIn_{2}S_{4}$ mixed crystal was deposited on throughly etched semi-insulting GaAs(100) in the Hot Wall Epitaxy(HWE) system. The sourceand substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_{2}S_{4}$ single crystal thin film was about 0.5$\mu\textrm{m}$/hr. The crystalline structure of $ZnIn_{2}S_{4}$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction (DCXD) measurement. The carrier density and mobility of $ZnIn_{2}S_{4}$ single crystal thin film measured from Hal effect by van der Pauw method are $8.51{\times}10^{17}{\textrm}{cm}^{-3}$, 291$\textrm{cm}^2$/V.s at $293^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $ZnIn_{2}S_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal filed splitting DCr were 0.0148eV and 0.1678 eV at $10^{\circ}$K, respectively. From the photoluminescence measurement of $ZnIn_{2}S_{4}$ single crystal thin film, we observed free excition($E_{X}$) typically observed only in high quality crystal and neutral donor bound exicton ($D^{\circ}$, X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9meV and 26meV, respectively. The activation energy of impurity measured by Haynes rule was 130meV.

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The study of growth and characterization of CuGaSe$_2$ single crystal thin films by hot wall epitaxy (HWE(Hot wall epitaxy)에 의한 CuGaSe$_2$단결정 박막 성장과 특성에 관한 연구)

  • 홍광준;백형원
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.3
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    • pp.189-198
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    • 2000
  • The stochiometric mixture of evaporating materials for the $CuGaSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0}$ and $c_0$ were 5.615 $\AA$ and 11.025 $\AA$, respectively. To obtains the single crystal thin films, $CuGaSe_2$mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5$\mu\textrm{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. The optical energy gaps were found to be 1.68 eV for CuGaSe$_2$sing1e crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by $\alpha$ = $9.615{\times}10^{-4}$eV/K, and $\beta$ = 335 K. From the photocurrent spectra by illumination of polarized light of the $CuGaSe_2$single crystal thin films. We have found that values of spin orbit coupling $\Delta$So and crystal field splitting $\Delta$Cr was 0.0900 eV and 0.2498 eV, respectively. From the PL spectra at 20 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626 eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352 eV, 0.0932 eV, respectively.

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