• Title/Summary/Keyword: optoelectronic materials

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Microstructure evolution and effect on deuterium retention in oxide dispersion strengthened tungsten during He+ irradiation

  • Ding, Xiao-Yu;Xu, Qiu;Zhu, Xiao-yong;Luo, Lai-Ma;Huang, Jian-Jun;Yu, Bin;Gao, Xiang;Li, Jian-Gang;Wu, Yu-Cheng
    • Nuclear Engineering and Technology
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    • v.52 no.12
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    • pp.2860-2866
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    • 2020
  • Oxide dispersion-strengthened materials W-1wt%Pr2O3 and W-1wt%La2O3 were synthesized by wet chemical method and spark plasma sintering. The field emission scanning electron microscopy (FE-SEM) analysis, XRD and Vickers microhardness measurements were conducted to characterize the samples. The irradiations were carried out with a 5 keV helium ion beam to fluences up to 5.0 × 1021 ions/m2 under 600 ℃ using the low-energy ion irradiation system. Transmission electron microscopy (TEM) study was performed to investigate the microstructural evolution in W-1wt%Pr2O3 and W-1wt%La2O3. At 1.0 × 1020 He+/m2, the average loops size of the W-1wt%Pr2O3 was 4.3 nm, much lower than W-1wt% La2O3 of 8.5 nm. However, helium bubbles were not observed throughout in both doped W materials. The effects of pre-irradiation with 1.0 × 1021 He+/m2 on trapping of injected deuterium in doped W was studied by thermal desorption spectrometry (TDS) technique using quadrupole mass spectrometer. Compared with the samples without He+ pre-irradiation, deuterium (D) retention of doped W materials increased after He+ irradiation, whose retention was unsaturated at the damage level of 1.0 × 1022D2+/m2. The present results implied that irradiation effect of He+ ions must be taken into account to evaluate the deuterium retention in fusion material applications.

Characterization of the Barrier Layers Comprised of Inorganic Compound for Organic Light Emitting Device Applications

  • Kim, Na-Rae;Lee, Yang-Doo;Kim, Jai-Kyeong;Hwang, Sung-Woo;Ju, Byeong-Kwon
    • Journal of Information Display
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    • v.7 no.3
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    • pp.13-18
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    • 2006
  • Currently, the flexible organic light emitting devices (OLEDs) are investigated. They are very vulnerable to moisture, and thus have been found to show some problems. Thus, an effective barrier layer is needed to protect from moisture in air. We deposited thin films with magnesium oxide (MgO) and silicon oxide $(SiO_{2})$ compounds mixed at various mixture ratios on flexible polyether sulfone (PES) substrates by an electron-beam evaporator to investigate their applizability for transparent barrier applications. In this study, we found that as the MgO fraction increased, thin films comprised of MgO and $(SiO_{2})$ compounds became more amorphous and their surface morphologies become smoother and denser. In addition, zirconium oxide $(ZrO_{2})$ was added to the above-mentioned compound mixtures. $ZrO_{2}$ made thin mixture films more amorphous and made the surface morphology denser and more uniform. The water vapor transmission rates (WVTRs) of the whole films decreased rapidly. The best WVTR was obtained by depositing thin films of Mg-Si-Zr-O compound among the whole thin films. As the thin mixture films became more amorphous, and the surface morphology become denser and more uniform, the WVTRs decreased. Therefore, the thin mixture films became more suitable for flexible OLED applications as transparent passivation layers against moisture in air.

Small-Scale Wind Energy Harvester Using PZT Based Piezoelectric Ceramic Fiber Composite Array (PZT계 압전 세라믹 파이버 어레이 복합체를 이용한 미소 풍력 에너지 하베스터)

  • Lee, Min-Seon;Na, Yong-Hyeon;Park, Jin-Woo;Jeong, Young-Hun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.5
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    • pp.418-425
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    • 2019
  • A piezoelectric ceramic fiber composite (PCFC) was successfully fabricated using $0.69Pb(Zr_{0.47}Ti_{0.53})O_3-0.31[Pb(Zn_{0.4}Ni_{0.6})_{1/3}Nb_{2/3}]O_3$ (PZT-PZNN) for use in small-scale wind energy harvesters. The PCFC was formed using an epoxy matrix material and an array of Ag/Pd-coated PZT-PZNN piezo-ceramic fibers sandwiched by Cu interdigitated electrode patterned polyethylene terephthalate film. The energy harvesting performance was evaluated in a custom-made wind tunnel while varying the wind speed and resistive load with two types of flutter wind energy harvesters. One had a five-PCFC array vertically clamped with a supporting acrylic rod while the other used the same structure but with a five-PCFC cantilever array. Stainless steel (thickness: $50{\mu}m$) was attached onto one side of the PCFC to form the PZT-PZNN cantilever. The output power, in general, increased with an increase in the wind speed from 2 m/s to 10 m/s for both energy harvesters. The highest output power of $15.1{\mu}W$ at $14k{\Omega}$ was obtained at a wind speed of 10 m/s for the flutter wind energy harvester with the PZT-PZNN cantilever array. The results presented here reveal the strong potential for wind energy harvester applications to supply sustainable power to various IoT micro-devices.

Alignment of Metal Halide Perovskite Nanowires and Their Application in Photodetectors (금속 할라이드 페로브스카이트 나노와이어의 광 센서 소자 응용)

  • Sihn, Moon Ryul;Choi, Jihoon
    • Korean Journal of Materials Research
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    • v.32 no.6
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    • pp.307-312
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    • 2022
  • Metal halide perovskite (MHP) nanocrystals (NCs) have emerged as promising materials for various optoelectronic applications including photovoltaics, light-emitting devices, and photodetectors because of their high absorption coefficient, high diffusion length, and photoluminescence quantum yield. However, understanding the morphological evolution of the MHP NCs as well as their controlled assembly into optoelectronic devices is still challenging and will require further investigation of the colloidal chemistry. In this study, we found that the amount of n-octylamine (the capping agent) plays a crucial role in inducing further growth of the MHP NCs into one-dimensional nanowires during the aging process. In addition, we demonstrate that the dielectrophoresis process can permit self-alignment of the MHP nanowires with uniform distribution and orientation on interdigitated electrodes. A strong light-matter interaction in the MHP NWs array was observed under UV illumination, indicating the photo-induced activation of their luminescence and electrical current in the self-aligned MHP nanowire arrays.

Self-Pulsation in Multisection Distributed Feedback Laser Diode with a Novel Dual Grating Structure

  • Park, Kyung-Hyun;Leem, Young-Ahn;Yee, Dae-Su;Baek, Yong-Soon;Kim, Dong-Churl;Kim, Sung-Bock;Sim, Eun-Deok
    • ETRI Journal
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    • v.25 no.3
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    • pp.149-155
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    • 2003
  • A self-pulsating multisection distributed-feedback laser diode (DFB LD) can potentially realize all-optical clock extraction. This device generally consists of three sections, two DFB sections and one waveguide section. The most important variable in this device is detuning, which is the relative spectral position between the stop bands of two DFB sections. We fabricated a novel structure in which two gratings were located one over and one under the active layers. Each grating structure was independently defined in processing so that detuning, which is the prerequisite for self-pulsation, could be easily controlled. Observing various self-pulsating phenomena in these devices under several detuning conditions, we characterized the phenomena as dispersive Q-switching, mode beating, and self-mode-locking.

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Fundamental Issues in Graphene: Material Properties and Applications

  • Choi, Sung-Yool
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.67-67
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    • 2012
  • Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, exhibits fascinating electrical properties, such as a linear energy dispersion relation and high mobility in addition to a wide-range optical absorption and high thermal conductivity. Graphene's outstanding tensile strength allows graphene-based electronic and photonic devices to be flexible, bendable, or even stretchable. Recently many groups have reported high performance electronic and optoelectronic devices based on graphene materials, i.e. field-effect transistors, gas sensors, nonvolatile memory devices, and plasmonic waveguides, in which versatile properties of graphene materials have been incorporated into a flexible electronic or optoelectronic platform. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic material properties and recent progresses in applications of graphene to electronics and optoelectronics and discuss future outlook of graphene-based devices.

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Co-sputtering of Microcrystalline SiGe Thin Films for Optoelectronic Devices

  • Kim, Seon-Jo;Kim, Hyeong-Jun;Kim, Do-Yeong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.64.2-64.2
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    • 2011
  • Recently, Silicon Germanium (SiGe) alloys have been received considerable attention for their great potentials in advanced electronic and optoelectronic devices. Especially, microcrystalline SiGe is a good channel material for thin film transistor due to its advantages such as narrow and variable band gap and process compatibility with Si based integrated circuits. In this work, microcrystalline silicon-germanium films (${\mu}c$-SiGe) were deposited by DC/RF magnetron co-sputtering method using Si and Ge target on Corning glass substrates. The film composition was controlled by changing DC and RF powers applied to each target. The substrate temperatures were changed from $100^{\circ}C$ to $450^{\circ}C$. The microstructure of the thin films was analyzed by x-ray diffraction (XRD) and Raman spectroscopy. The analysis results showed that the crystallinity of the films enhances with increasing Ge mole fraction. Also, crystallization temperature was reduced to $300^{\circ}C$ with $H_2$ dilution. Hall measurements indicated that the electrical properties were improved by Ge alloying.

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Exciton dissociation yields of semiconducting polymer thin film devices doped by various phosphorescent emitters

  • An, J.D.;Chang, J.Y.;Han, J.W.;Im, C.;Chin, B.D.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1010-1013
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    • 2006
  • To understand the exact charge carrier photogeneration properties of photoactive thin films consisting of a ${\pi}-conjugated$ polymer matrix and a triplet dopant, we prepared two types of polymer, poly(9-vinylcarbazole) (PVK) and poly[9,9-bis(2- ethylhexyl)fluorene-2,7-diyl] (PF2/6) doped with triplet emitters for organic light-emitting diodes (OLED), either iridium(III)fac-tris(2-phenylpyridine) $(Ir(ppy)_3)$ or iridium(III)bis[(4,6-fluorophenyl)- $pyridinato-N,C^2'$]picolinate (FIrpic), as thin film devices by using the conventional method. Those doped film devices, as well as pristine film devices, on ITO substrates were characterized by means of steady state photocurrent measurement for a wide spectral range.

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